Abstract: Non-oxidizing spacer densification method for producing semiconductor devices, such as MOSFET devices, and that may be implemented during semiconductor fabrication with little or substantially no polycide adhesion loss experienced during spacer densification. The method may be implemented to provide good polycide adhesion characteristics with reduced process complexity over conventional methods by eliminating the need for additional process steps such as metal silicide encapsulation or polysilicon surface treatments.
Type:
Grant
Filed:
July 30, 2001
Date of Patent:
November 4, 2003
Assignee:
ZiLOG, Inc.
Inventors:
Brett D. Lowe, John A. Smythe, Timothy K. Carns
Abstract: The present invention provides a memory architecture allowing for instructions of variable length to be stored without wasted memory spaces. Instructions of one, two, and three bytes can all be retrieved in a single fetch. The exemplary embodiment divides the memory block into two ×16 memories having some special addressing circuitry. This structure logically arranges the memory into a number of rows, each of four byte-wide columns. To the first of these ×16 memories, the full address is provided. If the address is within the two columns of the second ×16 memory, the full address is also provided to the second ×16 memory. If the address is to the first of the ×16 memories, the second ×16 memory instead receives the portion of the address specifying the row with one added to it. This results in a dual row access with the last one or two bytes of 3-byte instruction being supplied by the row above the first byte.
Type:
Grant
Filed:
April 30, 2001
Date of Patent:
November 4, 2003
Assignee:
ZiLog, Inc.
Inventors:
Bruce L. Troutman, Russell B. Lloyd, Randal Q. Thornley
Abstract: A filter using analog to digital conversion, digital filtering and oversampling noise reshaping is disclosed. Application of such a filter to a frequency locked oscillator is disclosed. Application of such a filter to an oscillator having a capability to synchronize with an external stimulus is disclosed.
Abstract: An Improved Infrared Signal Communication System and Method Including Transmission Means Having Automatic Gain Control is disclosed. Also disclosed is system and method that adjusts signal transmission power in response to incident signal power amplitude. The preferred system includes a control signal loop within the signal receiving system, and the system further includes a signal transmitting system that is responsive to the control signal loop. The preferred system includes manual, semi-automatic and automatic modes of operation. Still further, the preferred method includes at least two Ir-enabled appliances “stepping” each other “down” in transmit power in response to directives issued by the other Ir-enabled appliance.
Abstract: An Improved Infrared Signal Communication System and Method Including Transmission Means Having Automatic Gain Control is disclosed. Also disclosed is system and method that adjusts signal transmission power in response to incident signal power amplitude. The preferred system includes a control signal loop within the signal receiving system, and the system further includes a signal transmitting system that is responsive to the control signal loop. The preferred system includes manual, semi-automatic and automatic modes of operation. Still further, the preferred method includes at least two Ir-enabled appliances “stepping” each other “down” in transmit power in response to directives issued by the other Ir-enabled appliance.
Abstract: A photolithographic method for manufacturing a CMOS semiconductor device having retrograde twin well with high aspect ratio (of thickness of the photoresist to width of the mask line or thickness of the resulting structure to its own width) is disclosed. The method is applicable for high energy implantation or other processes requiring thick photoresists with high aspect ratios, with one embodiment comprising the following:
(a) forming a thick film of positive photoresist on a silicon substrate
(b) prebaking (softbaking) the thick film using non-typical conditions
(c) exposing the thick film using UV light
(d) post exposure baking (PEB) the thick film using non-typical conditions
(e) developing the exposed, thick film
(f) stabilizing the thick film using non-typical conditions
According to this method, a thick film of photoresist with high aspect ratios can be accurately and advantageously formed.
Abstract: The present invention provides a method for improving the quality of thin oxides formed upon a semiconductor body. The etch and pre-clean processes are performed in situ, taking place in a single apparatus. This reduces the amount of handling of the wafers, their exposure to clean room air, and time delays between clean and oxidation. This results in both a higher yield and greater reliability. In addition, it reduces equipment requirements. The etch, employing a buffered oxide etchant, resist strip, and pre-clean, all occur in a single apparatus without transfer, yielding better results, despite the inherently dirty nature of the resist strip, than the traditional technique of transferring to a new apparatus for each of these steps. The improvements are particularly important for thin oxides such as the tunnel oxides of EEPROMs.
Abstract: The present invention provides for data flow enhancement in processor architectures having one or more caches by allowing DMA-type transfers to and from these caches. Specific examples allow such direct transfers between a peripheral logic device and the cache memory, or between either the main memory or a special memory and the cache memory. This is done by the processor reserving a portion of cache for the direct transfer, which is then carried out by a DMA-type controller. While this transfer is occurring, the processor is able to carry out other tasks and access the unreserved portion of cache in the normal manner. In the preferred embodiment, the transfer is performed by a cycle stealing technique. Once the transfer is complete, the reserved portion of the cache may be accessed by the processor. The size of the reservable portion may either be fixed or dynamically determined by the operating system based on factors such as task flow management and data transfer rates.
Abstract: A memory mapped programmable output generator, capable of producing events such as creating complex waveforms, triggering analog to digital and digital to analog conversions, and generating processor interrupts is disclosed. These events are considered high speed since they are timed relative to a high-speed clock and require minimal processor over head. The event generator may be embodied as either a peripheral to a microcontroller or as a separate circuit. In its preferred embodiment, the output generator is a peripheral device on a microcontroller and uses a dedicated programmable, reloadable timer which is inaccessible to other blocks. Events are loaded in a serial format, where only one event is active at a given time. These events are sequenced through address pointers associated with each event. Once a given event is completed, the output generator loads the next event from a next address pointer.
Type:
Grant
Filed:
December 1, 1999
Date of Patent:
May 13, 2003
Assignee:
Zilog, Inc.
Inventors:
Dennis G. Zattiero, David L. Durlin, Gyle D. Yearsley
Abstract: A method and/or apparatus is capable of performing high accuracy digital level restoration with a high degree of noise immunity provided by a passive clamping stage.
Abstract: The present disclosure describes a technique that allows the amplitudes of vertical correction signal components to be adjusted independently. When the amplitude of each of the vertical correction signal components are set, they will not have to be readjusted when the amplitudes of the other vertical correction signal components are set. This greatly simplifies the process of setting the amplitudes of the vertical correction signal components, saving time and increasing the accuracy of the settings.
Abstract: A controller for executing instructions has one the order of five addressing modes and can allow executing of processes concurrently in multiple modes. A specific embodiment can effectively run legacy code written for the Z80 micoprocessor without requiring recompiling of code. An optional embodiment includes autonomous Multiply/Accumulator Engine (MAC) optimized to perform sum-of-products (SOP) operations with little controller overhead, making the invention capable of more effectively handling a number of processing tasks, particularly tasks related to digital signal processing (DSP).
Abstract: A Method and System for Enabling Wireless Data Communications with Electronic Devices having Disparate Operating Systems is disclosed. Also disclosed is a system that compares the Infrared or RF communications configuration of an electronic appliance to a target profile, and then uploads the target configuration profile to the appliance, if necessary. The preferred device and system perform a functional testing on the wireless communications system of the electronic appliance, including the transceiver hardware and all device drivers and software stacks. Furthermore, the device of the present invention is able to adopt the target configuration from an electronic appliance by downloading it from one or more appliances. Still further, the device of the present invention is able to communicate with two or more electronic appliances simultaneously. The device and system of the present invention are operable independent of the BIOS of the electronic appliance(s) to be configured.
Abstract: Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.
Abstract: A method and apparatus for separating a signal uses a low pass filtering in a first direction to produce a signal with a low component and a alias component and then uses a filtering in a second direction to produce a component of a separated signal. The filter has applications in television signal decoding and has other applications.
Abstract: The present invention discloses a novel universal remote control system. Specifically, the remote control system according to the present invention provides the following features: bidirectional communications between the remote control and at least one of the audio/video devices; dual communication mode; automatic communication mode selection; loading and processing electronic program guide in the remote control; soft graphical user interface in the remote control; expanding the television set functions by the remote control; calibration handshake between the remote control and the audio/video device; updating the remote control; lost beacon signal in the remote control; handwriting recognition mechanism, and voice recognition mechanism in the remote control.
Abstract: A circuit for regulating a current provided by a power supply to drive a load in response to an input signal, is provided. The circuit contains a current source that has a specified current value and is coupled to the power supply. In addition, the circuit also comprises a controller that generates a reference voltage and is coupled to the current source. Furthermore, the circuit also includes a comparator that compares the reference voltage and a voltage at a node. To this node, controller is coupled. In addition, the load is coupled between the node and the power supply. In response to the input signal, the controller regulates the current to drive the load. This current has a first current-value that is proportional to the specified current value of the current source when the voltage at the node is greater than the reference voltage and a second current value that is based on the power supply when the voltage at the node is less than the reference voltage.
Abstract: An apparatus and method for synchronizing and tracking an input data stream and for generating a synchronous clock therefrom, comprising means for generating a plurality of clock signals oscillating at substantially the same frequency, but with different phases; a plurality of delay lines having a common data input for receiving said input data stream, each delay line having multiple delay elements connected in series and having a common clock input for receiving one of said clock signals for clocking data of said data stream along said delay line in a direction away from said common data input; means for detecting which of said plurality of delay lines said data from said data stream is propagating therein; and means for generating the synchronous clock based on one of said clock signals that clocks the delay line that data from said data stream is propagating therein.
Abstract: A circuit for automatically driving a mechanical device at its resonance frequency is provided. To do so, the circuit detects non-resonance driving conditions of the mechanical device being coupled to and driven by such circuit. Based on such detection, the circuit generates a signal to drive the device at its resonance frequency.
Abstract: A method for manufacturing a semiconductor device in which ROM programming ion implantation is performed by utilizing the same mask as used for implanting dopant in MOS transistors. The ROM programming ion implantation is conducted under the same conditions as the MOS transistor forming step. Only a single mask needs to be modified for the programming, thus reducing cost and complexity of manufacturing the device.