Abstract: A performance of a semiconductor device is improved. The semiconductor device according to one embodiment includes a wire bonded to one bonding surface at a plurality of parts in an opening formed in an insulating film of a semiconductor chip. The semiconductor device includes also a sealer that seals the semiconductor chip and the wire so that the sealer is in contact with the bonding surface. The bonding surface includes a first region to which a bonding portion of the wire is bonded, a second region to which another bonding portion of the wire is bonded, and a third region between the first region and the second region. A width of the third region is smaller than a width of the first region and a width of the second region.
Abstract: Disclosed is a microelectronics package. The microelectronics package may include a reference plane, a signal routing layer, a dielectric layer, and a conductive layer. The signal routing layer may include a plurality of signal routing traces. The dielectric layer may be located adjacent to the signal routing layer. The conductive layer may be applied to the dielectric layer such that the dielectric layer is located in between the signal routing layer and the conductive layer. The conductive layer may be in electrical communication with the reference plane.
December 21, 2016
Date of Patent:
December 17, 2019
Li-Sheng Weng, Chung-Hao Joseph Chen, Emile Davies-Venn, Kemal Aygun, Mitul B. Modi
Abstract: A method for manufacturing a semiconductor device includes forming a structure protruding from a substrate, forming a dielectric layer covering the structure, forming a dummy layer covering the dielectric layer, and performing a planarization process to completely remove the dummy layer. A material of the dummy layer has a slower removal rate to the planarization process than a material of the dielectric layer.
Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.
Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the module substrate, a mold compound component, a thermally conductive film, and a thermally enhanced mold compound component. The mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally conductive film resides over at least the upper surface of the thinned flip chip at the bottom of the cavity. The thermally enhanced mold compound component resides over at least a portion of the thermally conductive film to fill the cavity.
Abstract: Disclosed is a die stack. The die stack may include a first plurality of dies and a second plurality of dies. Each of the plurality of dies may define a plurality of vias passing from a first side to a second side of the die. The plurality of dies may be stacked such that each of the plurality of vias in a first die are collinear with a respective via in a second die. At least one of the second plurality of dies may be wire bonded to at least one of the first plurality of dies.
Abstract: In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.
February 26, 2018
Date of Patent:
December 3, 2019
Micron Technology, Inc.
Michael T. Andreas, Jerome A. Imonigie, Prashant Raghu, Sanjeev Sapra, Ian K. McDaniel
Abstract: Structures of and methods for fabricating fine-scale interconnects and fuses are disclosed. A “mushroom”-type structure with a narrow stalk supporting a wider cap can be used for fine-scale interconnects with widths on the scale of hundreds of nanometers that have low resistivity. Micro-air bridges can be introduced by omitting the stalk in sections of the interconnect, allowing the interconnect to bridge over obstacles. The mushroom-type micro-air bridge structure can also be modified to create fine-scale fuses that have low resistivity overall and sections of significantly higher resistivity where the micro-air bridges exist. The significantly higher resistivity results in preferential fusing at the micro-air bridges. Both mushroom interconnects and mushroom fuses can be fabricated using electron beam lithography.
Abstract: An LED chip comprises: an operation substrate; a first conductive layer disposed on a functional surface of the operation substrate; a die disposed on the first conductive layer, wherein the die comprises a first semiconductor layer and a second semiconductor layer; a first electrode layer electrically connected with the first conductive layer; and a second electrode layer electrically connected with the second semiconductor layer, wherein a first isolation layer is disposed between the second electrode layer and the first conductive layer. In embodiments of the present disclosure, the first electrode layer and the second electrode layer are disposed on the bottom surface of the operation substrate, and are formed after the LED die is formed. Therefore, a dicing process and a packaging process are not required, thus, process steps are simplified and process cost is reduced, which is conducive to achieve “free packaging” technology.
Abstract: A semiconductor device including: a semiconductor substrate having a drift region of the first conductivity type; a cathode region formed on the lower surface of the semiconductor substrate; a diode portion having the cathode region formed on the lower surface of the semiconductor substrate; the first dummy trench portion provided from the upper surface of the semiconductor substrate to the drift region, including one part provided inside the diode portion and the other part provided outside the diode portion, and provided extending in series from inside the diode portion to outside the diode portion in a predetermined extending direction on the upper surface of the semiconductor substrate; and the first lead-out portion that is provided on the upper surface of the semiconductor substrate, and electrically connected to the first dummy trench portion outside the diode portion is provided.
Abstract: A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.
August 13, 2018
Date of Patent:
November 19, 2019
Ben Lee, Ming Hong Kuo, Wen-Chih Chen, Wensen Tsai
Abstract: A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region is provided. A first trench is formed in the first device region and filled with a first material. A second trench is formed in the second device region and filled with a second material. The first material and the second material comprise different stresses. After that, a first gate structure and a second gate structure are formed on the first material and the second material and completely covering the first trench and the second trench, respectively.
Abstract: A semiconductor device includes a first die; a first metal enclosure directly contacting and vertically extending below the first die, wherein the first metal enclosure peripherally encircles a first enclosed space; a second die directly contacting the first metal enclosure opposite the first die; a second metal enclosure directly contacting and vertically extending below the second die, wherein the second metal enclosure peripherally encircles a second enclosed space; and an enclosure connection mechanism directly contacting the first metal enclosure and the second metal enclosure for electrically coupling the first metal enclosure and the second metal enclosure.
Abstract: A device chip manufacturing method includes a passivation film removing step of removing a passivation film along each division line, a wafer dividing step of performing plasma etching using a fluorine-based gas to the front side of a wafer in the condition where the passivation film is used as a mask, thereby dividing the wafer along the division lines, and a die attach film removing step of performing plasma etching using an oxygen-based gas to the front side of the wafer in the condition where the passivation film is used as a mask, thereby removing a part or the whole of a die attach film along each division line.
Abstract: A method for manufacturing an interconnect structure is provided, and the method is as below. A dielectric layer is deposited over a substrate. The dielectric layer is etched to form a recess. A dummy adhesion layer is deposited on sidewalls of the recess. A conductive layer is formed in the recess. The dummy adhesion layer is removed to expose a portion of the conductive layer.
Abstract: An electronic component mounting board includes a substrate on which an electronic component is mountable. The substrate includes a plurality of layers stacked on one another, a plurality of conductor layers located between the plurality of layers, and a recess located continuously over side surfaces of the plurality of layers. The electronic component mounting board includes an electrode located in the recess and covering an end of at least one of the plurality of conductor layers in the recess. The conductor layers contain a metal material different from a metal material contained in the electrode. The conductor layers have outer edges located inward from an outer edge of the substrate in a plan view.
Abstract: A microelectronic assembly includes a first microelectronic package having a substrate with first and second opposed surfaces and substrate contacts thereon. The first package further includes first and second microelectronic elements, each having element contacts electrically connected with the substrate contacts and being spaced apart from one another on the first surface so as to provide an interconnect area of the first surface between the first and second microelectronic elements. A plurality of package terminals at the second surface are electrically interconnected with the substrate contacts for connecting the package with a component external thereto. A plurality of stack terminals are exposed at the first surface in the interconnect area for connecting the package with a component overlying the first surface of the substrate.
Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.
Abstract: A method for fabricating a TFT-containing backplate is disclosed. The method includes forming a top-gate TFT on a substrate. The top-gate TFT includes a gate insulating layer which includes a negative silicone light shielding material. A TFT-containing backplate is also disclosed.
Abstract: Structures of and methods for fabricating fine-scale interconnects are disclosed. A “mushroom”-type structure with a narrow stalk supporting a wider cap can be used for fine-scale interconnects with widths on the scale of hundreds of nanometers that have low resistivity. Micro-air bridges can be introduced by omitting the stalk in sections of the interconnect, allowing the interconnect to bridge over obstacles.