Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.

Abstract: An organic light-emitting display device includes a substrate having a display region and a peripheral region, a plurality of pixels on the substrate in the display region, a first wiring and a second wiring on the substrate in the peripheral region, An insulation layer on the first and second wirings, the insulation layer covering a top surface and a sidewall of each of the first and second wirings, and an encapsulation layer on the plurality of pixels and on the insulation layer.

Abstract: A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor. An inhibitor film comprising the inhibitor is formed on the conductive feature. The method further includes depositing a conductive barrier layer extending into the opening, performing a treatment to remove the inhibitor film after the conductive barrier layer is deposited, and depositing a conductive material to fill a remaining portion of the opening.

Abstract: An image sensor package includes a substrate, an image sensor mounted on the substrate, a bonding wire connecting the image sensor to the substrate, a reflector disposed on the image sensor, a sealing member sealing the bonding wire and a portion of the image sensor, and covering at least a portion of the reflector, the sealing member including a hole exposing an effective imaging plane of the image sensor, and a filter attached to the sealing member.

Abstract: Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. The gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. In some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.

Abstract: A display device includes a substrate in which a first area, a second area and a bending area between the first and second areas are defined, a plurality of pixels disposed above the substrate in the first area, a plurality of conductive layers extending to and intersecting the bending area, a protective film covering the conductive layers and disposed in the bending area, a first portion of the first area adjacent to the bending area, and a second portion of the second area adjacent to the bending area. The display device further includes a plurality of tag layers disposed in the first and second portions and connected to both ends of the conductive layers, wherein the bending area is interposed between the plurality of tag layers. The tag layers are exposed to an outside of the display device by exposure holes defined in the protective film.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.

Abstract: A device is disclosed. In an embodiment the device includes an anode, an organic active layer above the anode, an organic layer sequence above the organic active layer, a metallic layer above the organic layer sequence and a cathode above the metallic layer, wherein the metallic layer includes Yb.

Abstract: A display device includes a substrate, a first data line, a scan line, a first sub-pixel, a passivation layer, and a common electrode. The first sub-pixel includes a first main-driving element, a first sub-driving element, a first capacitor electrode, and a first pixel electrode. The first main-driving element includes a first main-gate, a first main-channel layer, a first main-source, and a first main-drain. The first sub-driving element includes a first sub-gate, a first sub-channel layer, a first sub-source, and a first sub-drain. The first capacitor electrode is electrically connected with the first main-drain and the first sub-source. The first pixel electrode is electrically connected with the first sub-drain. The common electrode and the first capacitor electrode have a first main capacitor therebetween. The common electrode and the first pixel electrode have a first sub capacitor therebetween.

Abstract: A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second device fin. The first dummy fin has a first height. A third device fin and a fourth device fin are each located in a second region of the semiconductor device. The second region has a second pattern density that is greater the first pattern density. A second dummy fin is located in the second region. The second dummy fin is disposed between the third device fin and the fourth device fin. The second dummy fin has a second height that is greater than the first height.

Abstract: The present disclosure provides a display panel and a display device. The display panel includes pixel circuits arranged in a matrix, and a blocking unit. Each pixel circuit includes: a driving transistor; a first switch transistor; a second switch transistor; and a third switch transistor. The blocking unit is configured to receive a fixed potential signal, and at least a partial area of the blocking unit is located between a first semiconductor connection portion and a second semiconductor connection portion, the first semiconductor connection portion is connected between a second electrode of the first switch transistor and a gate electrode of the driving transistor, and the second semiconductor connection portion is electrically connected between a first electrode of the second switch transistor and a data line.

Abstract: An organic EL display device (100) includes a plurality of pixels, and also includes an element substrate including organic EL elements (3) respectively located in the plurality of pixels and a bank layer (48) defining each of the pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12) and an organic barrier layer (14) in contact with a top surface or a bottom surface of the first inorganic barrier layer. The plurality of pixels include a red pixel, a green pixel and a blue pixel. The organic EL display device further includes a polydiacetylene layer (52) selectively provided on a second inorganic barrier layer (16) of the thin film encapsulation structure on the blue pixel and exhibiting a blue color. The polydiacetylene layer is a polymer of 10,12-pentacosadiynoic acid.

Abstract: This organic EL display device (100) is provided with an element substrate which comprises multiple pixels and which comprises organic EL elements (3) arranged in each pixel and bank layers (48) defining the pixels, and a thin-film sealing structure (10) which covers the pixels. The thin-film sealing structure includes a first inorganic barrier layer (12), and an organic barrier layer (14) in contact with the upper surface or lower surface of the first inorganic barrier layer. The multiple pixels include red pixels, green pixels and blue pixels, and further have a first polydiacetylene layer (52a) which exhibits a blue color and which is provided selectively on a second inorganic barrier layer (16) of the thin-film sealing structure on blue pixels, and a second polydiacetylene layer (52b) which exhibits a red color and which is provided selectively on the thin-film sealing structure on red pixels. The first and second polydiacetylene layers are a polymer of 10,12-pentacosadiynoic acid.

Abstract: A light-emitting apparatus includes a substrate, pads disposed on the substrate, a sacrificial pattern layer and a light-emitting diode element disposed on the sacrificial pattern layer. The light-emitting diode element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, and electrodes. A connection patterns disposed on at least one of the electrodes and the pads. Materials of the connection patterns include hot fluidity conductive materials. The connection patterns cover a sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the electrodes and the pads. In addition, the manufacturing method of the above light-emitting apparatus is also proposed.

Abstract: A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the channel layer and stacked to be spaced apart from each other in the first direction, and an impurity region formed in an upper end of the channel layer.

Abstract: Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.

Abstract: A flexible organic light emitting display (OLED) device includes a flexible substrate having a display area, a non-display area at a periphery of the display area and a folding region; at least one organic emitting diode on the flexible substrate in the display area; an encapsulation film covering the organic emitting diode; and a dam on the flexible substrate. The dam laterally surrounds the display area and includes: a first dam in the folding region; and a second dam outside the folding region, wherein the average thickness of the first dam is smaller than the average thickness of the second dam.

Abstract: There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

Abstract: A display device including a first substrate including a display area that displays an image and a peripheral area, in which no image is displayed, surrounding the display area. The display device further includes a plurality of pixels disposed in the display area. The display device additionally includes a first metal layer disposed above the first substrate in the peripheral area, and the first metal layer including a plurality of openings. The display device further includes a sealant disposed above the first metal layer, and surrounding the plurality of pixels. The display device additionally includes a plurality of second metal layers disposed above the first substrate and below the first metal layer in the peripheral area, and respectively overlapping the openings of the first metal layer. A part of the sealant is disposed in the plurality of openings.

Abstract: A display device includes a substrate including a display area to display an image and a non-display area provided on at least one side of the display area, a plurality of pixels disposed on the substrate and provided in an area corresponding to the display area, a first insulating layer having an opening in a first area of the non-display area, a second insulating layer provided in the first area, first lines provided on the substrate and connected to the plurality of pixels, and second lines provided on the first and second insulating layers, and connected to the first lines. An area in which the first lines overlap with the second lines is spaced apart from an edge of the second insulating layer when viewed in a plan view.