Abstract: The present disclosure relates to a method of manufacturing an OLED device, an OLED device and a display panel. The method comprises: forming a first electrode layer over a substrate; forming a pixel define layer over the first electrode layer, the pixel define layer having a plurality of openings each corresponding to a light emitting region of each sub-pixel unit; performing a roughening process over a surface of the pixel define layer apart away from the first electrode layer; forming a hole injection layer covering the pixel define layer and the openings; and forming a hole transport layer, a light emitting layer, an electron transport layer and a second electrode layer in sequence over the hole injection layer at regions corresponding to the openings.

Abstract: A semiconductor package includes: a connection member having a first surface and a second surface opposing each other in a stacking direction of the semiconductor package and including an insulating member and a redistribution layer formed on the insulating member and having a redistribution via; a semiconductor chip disposed on the first surface of the connection member and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection member and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection member; UBM pads disposed on the passivation layer and overlapping the redistribution vias in the stacking direction; and UBM vias connecting the UBM pads to the redistribution layer through the passivation layer, not overlapping the redistribution vias with respect to the stacking direction, and having a non-circular cross section.

Abstract: A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: An organic light-emitting display apparatus includes: a substrate; first electrodes arranged on the substrate at separate positions; a second electrode disposed on the first electrodes to face the first electrodes; an intermediate layer disposed between the first electrodes and the second electrode and including an emission layer; a first encapsulating layer disposed on the second electrode and patterned to have a plurality of islands, the first encapsulating layer including an organic material; and a second encapsulating layer covering the islands of the first encapsulating layer and including an inorganic material.

Abstract: A display device includes: a substrate including a pixel region and a peripheral region; a plurality of pixels provided in the pixel region, the plurality of pixels including first, second, and third sub-pixels each including a light emitting region; a light emitting element disposed in the light emitting region of each of the first, second, and third sub-pixels; a pixel circuit disposed in each of the first, second, and third sub-pixels, the pixel circuit configured to drive the light emitting element, wherein each pixel includes a first region in which the pixel circuit is disposed and a second region except the first region, wherein the light emitting element disposed in the first sub-pixel overlaps with the pixel circuit, and the light emitting element disposed in the second sub-pixel is disposed in the second region.

Abstract: An organic light-emitting display device includes a substrate having a display region and a peripheral region, a plurality of pixels on the substrate in the display region, a first wiring and a second wiring on the substrate in the peripheral region, a compensation layer on the first and second wirings, the compensation layer surrounding a top surface and a sidewall of each of the first and second wirings, and an encapsulation layer on the plurality of pixels and on the compensation layer.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: An organic light-emitting diode display may have an array of pixels. The pixels may each have an organic light-emitting diode with a respective anode and may be formed from thin-film transistor circuitry formed on a substrate. A mesh-shaped path may be used to distribute a power supply voltage to the thin-film circuitry. The mesh-shaped path may have intersecting horizontally extending lines and vertically extending lines. The horizontally extending lines may be zigzag metal lines that do not overlap the anodes. The vertically extending lines may be straight vertical metal lines that overlap the anodes. The pixels may include pixels of different colors. Angularly dependent shifts in display color may be minimized by ensuring that the anodes of the differently colored pixels overlap the vertically extending lines by similar amounts.

Abstract: An organic light emitting display device that includes a substrate that may be flexible, and an insulation layer arranged on the substrate. The insulation layer is perforated by openings to facilitate bending of the display device. A plurality of the connection lines extend from the image producing display area to a peripheral area of the display device to allow for connection to an external device. Each of the openings includes one of the connection lines to prevent shorting together of the connection hues during the patterning step used to pattern the connection lines. In one embodiment, the each of the connection lines extends through the openings and across the sidewalls of the openings. In another embodiment, the connection lines are interposed between two adjacent openings.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: A display device includes: a substrate; a plurality of pixels on the substrate; an organic encapsulation layer covering a pixel area including at least one pixel; a first inorganic encapsulation layer on the organic encapsulation layer and having a first crack at a pixel area gap; and a second inorganic encapsulation layer on the first inorganic encapsulation layer and filling the first crack.

Abstract: An array board includes input terminals, a first interlayer insulating film, a first planarization film, terminal lines, a second planarization film, and protective members. A first interlayer insulating film edge section and a first planarization film edge section are disposed between the input terminals and the display area. The terminal lines in a layer upper than the first planarization film and extending to cross the first interlayer insulating film edge section and the first planarization film edge section are connected to the input terminals. The second planarization film in a layer upper than the terminal lines includes a second planarization film edge section disposed closer to the input terminals relative to the first interlayer insulating edge section and the first planarization film edge section. The protective members in a layer upper than the second planarization film cover sections of the terminals lines not overlapping the second planarization film, respectively.

Abstract: A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, wherein the patterned mask layer has a plurality of first features, and a first distance between adjacent first features of the plurality of first features. The method further includes patterning the material layer to form the first features in the material layer. The method further includes increasing the first distance between adjacent first features of the plurality of first features to a second distance. The method further includes treating portions of the material layer exposed by the patterned mask layer. The method further includes removing the patterned mask layer; and removing non-treated portions of the material layer.

Abstract: Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.

Abstract: An organic electronic component and a method for making an organic electronic component are disclosed. In an embodiment the component includes an anode, an active layer arranged above the anode, an electron injection layer arranged above the active layer and a cathode arranged above the electron injection layer. The electron injection layer further comprises a first organic layer comprising a first organic matrix material, a second organic layer comprising a second organic matrix material and a metallic layer, wherein the first organic matrix material has a higher electron conductivity than the second organic matrix material.

Abstract: A display device is provided. The device comprises light emitting elements and a protection layer. The light emitting elements include lower electrodes isolated by an insulator portion, an organic layer including a light emitting layer arranged on the lower electrodes, and an upper electrode covering the organic layer. The insulator portion includes a first portion arranged on the lower electrodes, and a second portion arranged between the lower electrodes. The protection layer covers the upper electrode, and is provided with an isolating portion that is arranged over the second portion and has a refractive index different from the protection layer. A height of an upper surface of a portion of the upper electrode arranged under the isolating portion is lower than a height of an upper surface of a portion of the upper electrode arranged over the first portion.

Abstract: In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing an OLED display are disclosed. In one aspect, the method includes forming a data electrode layer and patterning the data electrode layer so as to form a source electrode, a drain electrode, and a pad electrode. The method can also include forming a first organic insulating layer over the source, drain and pad electrodes and forming a via hole corresponding to the source electrode or the drain electrode in the first organic insulating layer via a one tone mask. The method can further include forming an OLED including an anode electrically connected to the source electrode or the drain electrode, an organic emission layer, and a cathode, and etching a first portion of the first organic insulating layer formed over the pad electrode and a second portion of the organic emission layer formed over the pad electrode.

Abstract: A quantum rod panel includes a first substrate and a second substrate facing each other, a pixel electrode and a common electrode over the first substrate and spaced apart from each other, and a quantum rod layer between the pixel electrode and the common electrode and including quantum rods and metal particles.