Abstract: Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.

Abstract: An organic light emitting display device is provided that includes a first substrate having a first pad electrode; a second substrate having a touch array and a second pad electrode connected to the touch array; a plurality of first barriers provided on one surface of the first substrate adjacent to the first pad electrode; and a plurality of second barriers provided on the other surface of the second substrate facing one surface of the first substrate, wherein the first barriers are coupled to the second barriers alternately with each other.

Abstract: At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.

Abstract: A flexible device is manufactured at low temperatures. A second substrate is bonded to a first substrate by a first adhesive layer. A first insulating layer, a transistor, and a second insulating layer are formed over the second substrate. Then, the first substrate and the second substrate are separated from each other while being heated at a first temperature. The heat resistant temperatures of the first substrate, the second substrate, and the first adhesive layer are a second temperature, a third temperature, and a fourth temperature, respectively. Each of the first insulating layer, the second insulating layer, and the transistor is formed at a temperature higher than or equal to room temperature and lower than the fourth temperature. The third temperature is higher than the fourth temperature and lower than the second temperature. The first temperature is higher than the fourth temperature and lower than the third temperature.

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Abstract: A semiconductor device includes a substrate having a fin projecting upwardly through an isolation structure over the substrate; a gate stack over the isolation structure and engaging the fin; and a gate spacer on a sidewall of the gate stack and in physical contact with the gate stack. The semiconductor device further includes a first dielectric layer vertically between the fin and the gate spacer. The semiconductor device further includes a second dielectric layer vertically between the first dielectric layer and the gate spacer, wherein the first and second dielectric layers include different materials, and wherein the second dielectric layer is in physical contact with the gate spacer and the first dielectric layer.

Abstract: The present application discloses a method of fabricating an organic light emitting diode display substrate having a subpixel region and an inter-subpixel region. The method includes forming a pixel definition layer on the base substrate, the pixel definition layer being formed in the inter-subpixel region and defining the subpixel region of the organic light emitting diode display substrate; forming an insulating dielectric layer on a side of the pixel definition layer distal to the base substrate, the insulating dielectric layer being formed to define a first aperture region greater than the subpixel region; and, subsequent to forming the insulating dielectric layer, forming an organic light emitting layer in each subpixel region using a mask plate placed on the insulating dielectric layer.

Abstract: The present disclosure relates to a method of manufacturing an OLED device, an OLED device and a display panel. The method comprises: forming a first electrode layer over a substrate; forming a pixel define layer over the first electrode layer, the pixel define layer having a plurality of openings each corresponding to a light emitting region of each sub-pixel unit; performing a roughening process over a surface of the pixel define layer apart away from the first electrode layer; forming a hole injection layer covering the pixel define layer and the openings; and forming a hole transport layer, a light emitting layer, an electron transport layer and a second electrode layer in sequence over the hole injection layer at regions corresponding to the openings.

Abstract: A semiconductor package includes: a connection member having a first surface and a second surface opposing each other in a stacking direction of the semiconductor package and including an insulating member and a redistribution layer formed on the insulating member and having a redistribution via; a semiconductor chip disposed on the first surface of the connection member and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection member and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection member; UBM pads disposed on the passivation layer and overlapping the redistribution vias in the stacking direction; and UBM vias connecting the UBM pads to the redistribution layer through the passivation layer, not overlapping the redistribution vias with respect to the stacking direction, and having a non-circular cross section.

Abstract: A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: An organic light-emitting display apparatus includes: a substrate; first electrodes arranged on the substrate at separate positions; a second electrode disposed on the first electrodes to face the first electrodes; an intermediate layer disposed between the first electrodes and the second electrode and including an emission layer; a first encapsulating layer disposed on the second electrode and patterned to have a plurality of islands, the first encapsulating layer including an organic material; and a second encapsulating layer covering the islands of the first encapsulating layer and including an inorganic material.

Abstract: A display device includes: a substrate including a pixel region and a peripheral region; a plurality of pixels provided in the pixel region, the plurality of pixels including first, second, and third sub-pixels each including a light emitting region; a light emitting element disposed in the light emitting region of each of the first, second, and third sub-pixels; a pixel circuit disposed in each of the first, second, and third sub-pixels, the pixel circuit configured to drive the light emitting element, wherein each pixel includes a first region in which the pixel circuit is disposed and a second region except the first region, wherein the light emitting element disposed in the first sub-pixel overlaps with the pixel circuit, and the light emitting element disposed in the second sub-pixel is disposed in the second region.

Abstract: An organic light-emitting display device includes a substrate having a display region and a peripheral region, a plurality of pixels on the substrate in the display region, a first wiring and a second wiring on the substrate in the peripheral region, a compensation layer on the first and second wirings, the compensation layer surrounding a top surface and a sidewall of each of the first and second wirings, and an encapsulation layer on the plurality of pixels and on the compensation layer.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: An organic light-emitting diode display may have an array of pixels. The pixels may each have an organic light-emitting diode with a respective anode and may be formed from thin-film transistor circuitry formed on a substrate. A mesh-shaped path may be used to distribute a power supply voltage to the thin-film circuitry. The mesh-shaped path may have intersecting horizontally extending lines and vertically extending lines. The horizontally extending lines may be zigzag metal lines that do not overlap the anodes. The vertically extending lines may be straight vertical metal lines that overlap the anodes. The pixels may include pixels of different colors. Angularly dependent shifts in display color may be minimized by ensuring that the anodes of the differently colored pixels overlap the vertically extending lines by similar amounts.

Abstract: An organic light emitting display device that includes a substrate that may be flexible, and an insulation layer arranged on the substrate. The insulation layer is perforated by openings to facilitate bending of the display device. A plurality of the connection lines extend from the image producing display area to a peripheral area of the display device to allow for connection to an external device. Each of the openings includes one of the connection lines to prevent shorting together of the connection hues during the patterning step used to pattern the connection lines. In one embodiment, the each of the connection lines extends through the openings and across the sidewalls of the openings. In another embodiment, the connection lines are interposed between two adjacent openings.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: A display device includes: a substrate; a plurality of pixels on the substrate; an organic encapsulation layer covering a pixel area including at least one pixel; a first inorganic encapsulation layer on the organic encapsulation layer and having a first crack at a pixel area gap; and a second inorganic encapsulation layer on the first inorganic encapsulation layer and filling the first crack.

Abstract: An array board includes input terminals, a first interlayer insulating film, a first planarization film, terminal lines, a second planarization film, and protective members. A first interlayer insulating film edge section and a first planarization film edge section are disposed between the input terminals and the display area. The terminal lines in a layer upper than the first planarization film and extending to cross the first interlayer insulating film edge section and the first planarization film edge section are connected to the input terminals. The second planarization film in a layer upper than the terminal lines includes a second planarization film edge section disposed closer to the input terminals relative to the first interlayer insulating edge section and the first planarization film edge section. The protective members in a layer upper than the second planarization film cover sections of the terminals lines not overlapping the second planarization film, respectively.