Abstract: Methods, systems, and devices for discharge current mitigation in a memory array are described. Access lines of a memory array may be divided into discrete segments, with each segment coupled with a driver for the access line by one or more vias respective to the segment. For example, a first segment of an access line may be coupled with a first set of memory cells, a second segment of the access line may be coupled with a second set of memory cells, and a driver may be coupled to the first segment by a first via and to the second segment by a second via. To access a memory cell in either the first set or the second, both the first segment of the access line and the second segment of the access line may be activated together by the common driver.

Abstract: Methods, systems, and devices for dual mode ferroelectric memory cell operation are described. A memory array or portions of the array may be variously operated in volatile and non-volatile modes. For example, a memory cell may operate in a non-volatile mode and then operate in a volatile mode following a command initiated by a controller while the cell is operating in the non-volatile mode. The memory cell may operate in the volatile mode and then operate in the non-volatile mode following a subsequent command. In some examples, one memory cell of the memory array may operate in the non-volatile mode while another memory cell of the memory array operates in the volatile mode.

Abstract: Memory devices and systems with improved command/address bus utilization are disclosed herein. In one embodiment, a memory device comprises a plurality of external command/address terminals and a command decoder. The plurality of external command/address terminals are configured to receive a command as a corresponding plurality of command/address bits. A first set of the command/address bits indicate a read or write operation. A second set of the command/address bits indicate whether to execute a refresh operation. The memory device is configured to, in response to the first set of command/address bits, execute the read or write operation on a portion of a memory array. The memory device is further configured to, in response to the second set of command/address bits, execute the refresh operation to refresh at least one memory bank of the memory array when the second set of command/address bits indicate that the refresh operation should be executed.

Abstract: Provided are a computer program product, system, and method for determining sectors of a track to stage into cache by training a machine learning module. A machine learning module that receives as input performance attributes of system components affected by staging tracks from the storage to the cache and outputs a staging strategy comprising one of a plurality of staging strategy indicating at least one of a plurality of sectors of a track to stage into the cache. A margin of error is determined based on a current value of a performance attribute and a threshold of the performance attribute. An adjusted staging strategy is determined based on the margin of error. The machine learning module is retrained with current performance attributes to output the adjusted staging strategy.

Abstract: A duty adjustment circuit, and a delay locked loop circuit and a semiconductor memory device including the same are provided. The duty adjustment circuit includes a pulse generator configured to generate a pulse signal at a constant pulse width regardless of a frequency of a reference clock signal, based on frequency information, a code generator configured to generate a first predetermined number of delayed pulse signals by delaying the pulse signal, as a first code in response to the pulse signal, and a duty adjuster configured to receive a delay clock signal, and generate a duty correction clock signal by adjusting a slope of rising transition and a slope of falling transition of the delay clock signal in response to the first code and a second code.

Abstract: A method for measuring interference in a memory device is provided. The method includes: programming a selected memory cell among a plurality of memory cells connected in series between a bit line and a source line; measuring a first noise value of the programmed selected memory cell; programming an adjacent memory cell adjacent to the selected memory cell among the plurality of memory cells; measuring a second noise value of the selected memory cell, after the programming of the adjacent memory cell is completed; and determining interference on the selected memory cell based on the first noise value and the second noise value. The first noise value and the second noise value are measured by detecting a low frequency noise of a cell current of the selected memory cell.

Abstract: Systems and methods disclosed herein are related to a memory system. In one aspect, the memory system includes a first set of memory cells including a first string of memory cells and a second string of memory cells; and a first switch including: a first electrode connected to first electrodes of the first string of memory cells and first electrodes of the second string of memory cells, and a second electrode connected to a first global bit line, wherein gate electrodes of the first string of memory cells are connected to a first word line and gate electrodes of the second string of memory cells are connected to a second word line.

Abstract: Systems and method are provided for operating a multi-array memory that includes a left memory array and a right memory array of a memory bank. A command is received at memory input pins. A signal representative of the command is propagated to an array control inhibitor. An array inhibit command is received on one or more other pins of the memory and provided to the array control inhibitor. The array control inhibitor is used to prevent arrival of the command to one of the left memory array and the right memory array based on the array inhibit command.

Abstract: A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.

Abstract: Methods and apparatus for dynamically adjusting performance of partitioned memory. In one embodiment, the method includes receiving one or more configuration requests for the memory device, determining whether to grant the one or more configuration requests for the memory device, in response to the determining, implementing the one or more configuration requests within the memory device and operating the memory device in accordance with the implementing. The adjusting of the performance for the partitioned memory includes one or more of enabling/disabling refresh operations, altering a refresh rate for the partitioned memory, enabling/disabling error correcting code (ECC) circuity for the partitioned memory, and/or altering a memory cell architecture for the partitioned memory. Systems and applications that may benefit from the dynamic adjustment of performance are also disclosed.

Abstract: A circuit includes a memory array, a write circuit configured to store data in memory cells of the memory array, a read circuit configured to retrieve the stored data from the memory cells of the memory array, and a computation circuit configured to perform one or more logic operations on the retrieved stored data. The memory array is positioned between the write circuit and the read circuit.

Abstract: An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die in response to commands from a memory controller. To utilize space more efficiently on the memory die, the control die compacts fragmented data on the memory die.

Abstract: An information handling system includes a first z-axis compression connector, a first dual in-line memory module (DIMM), a second z-axis compression connector, a second DIMM, and a printed circuit board. A first side of the first compression connector is affixed to the printed circuit board. A first surface of a first memory circuit board of the first DIMM is affixed to a second side of the compression connector. A first side of the second compression connector is affixed to a second side of the first memory circuit board. A first side of a second memory circuit board of the second DIMM is affixed to a second side of the second compression connector. The first compression connector has a first depth, and the second compression connector has a second depth that is different from the first depth.

Abstract: A memory system is disclosed in the present disclosure. The memory system may include at least one first type of memory configured on at least one first rank and to operate at a first frequency, and at least one second type of memory configured on at least one second rank and to operate at a second frequency. The memory system may also include a physical block (PHY) configured to generate a first clock at the first frequency and a second clock at the second frequency.

Abstract: Methods, systems, and devices for plate node configurations and operations for a memory array are described. A single plate node of a memory array may be coupled to multiple rows or columns of memory cells (e.g., ferroelectric memory cells) in a deck of memory cells. The single plate node may perform the functions of multiple plate nodes. The number of contacts to couple the single plate node to the substrate may be less than the number of contacts to couple multiple plate nodes to the substrate. Connectors or sockets in a memory array with a single plate node may define a size that is less than a size of the connectors or sockets with multiple plate nodes. In some examples, a single plate node of the memory array may be coupled to multiple lines of a memory cells in multiple decks of memory cells.

Abstract: A semiconductor device includes a ferroelectric field-effect transistor (FeFET), wherein the FeFET includes a substrate; a source region in the substrate; a drain region in the substrate; and a gate structure over the substrate and between the source region and the drain region. The gate structure includes a gate dielectric layer over the substrate; a ferroelectric film over the gate dielectric layer; and a gate electrode over the ferroelectric film.

Abstract: Memory devices may have a memory array and a delay locked loop (DLL) circuit that adjusts signals associated with operations to access of the memory array. The memory device may also include a controller that delays an access command to access the memory array by transmitting the access command through delay circuitry of the DLL circuit. This may cause the access command to be delayed by a first duration of time when output from the delay circuitry. Delay of the access command may align a data signal and the access command such that the access command and a system clock may cause latching of suitable data of the data signal.

Abstract: A semiconductor device includes: a substrate extending in a first direction and a second direction intersecting with the first direction; a plurality of input/output pads disposed at one side of the substrate; a first circuit adjacent to the input/output pads in the first direction; a second circuit disposed to be spaced farther apart from the input/output pads in the first direction than the first circuit; a first memory cell array overlapping the first circuit; a second memory cell array overlapping the second circuit; first metal source patterns overlapping the first memory cell array and being spaced apart from each other in the second direction; and a second metal source pattern overlapping the second memory cell array and formed to have a width wider than a width of each of the first metal source patterns in the second direction.

Abstract: A method of operating a memory controller, the method including performing a state shaping operation on received data based on state shaping information in response to a write request, the received data and the write request being received from a host, the state shaping information representing a memory cell characteristic corresponding to a memory cell group on which the received data is to be programmed, and the state shaping information being received from a memory device, and transmitting transformation data to the memory device, the transformation data being generated through the state shaping operation.

Abstract: A nonvolatile memory device includes a first pin that receives a first signal, a second pin that receives a second signal, third pins that receive third signals, a fourth pin that receives a write enable signal, a memory cell array, and a memory interface circuit that obtains a command, an address, and data from the third signals in a first mode and obtains the command and the address from the first signal and the second signal and the data from the third signals in a second mode. In the first mode, the memory interface circuit obtains the command from the third signals and obtains the address from the third signals. In the second mode, the memory interface circuit obtains the command from the first signal and the second signal and obtains the address from the first signal and the second signal.