Abstract: Amplifiers can be found in pipelined ADCs and pipelined-SAR ADCs as inter-stage amplifiers. The amplifiers can in some cases implement and provide gains in high speed track and hold circuits. The amplifier structures can be open-loop amplifiers, and the amplifier structures can be used in MDACs and samplers of high speed ADCs. The amplifiers can be employed without resetting, and with incomplete settling, to maximize their speed and minimize their power consumption. The amplifiers can be calibrated to improve performance.

Abstract: An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

Abstract: An offset-cancellation circuit having a first amplification stage with a gain of the first amplification stage and configured to receive an offset voltage of a first amplifier. A storage element is configured to be coupled to and decoupled from the first amplification stage and configured to store a potential difference output by the first amplification stage. The potential difference is determined by the offset voltage of the first amplifier and the gain of the first amplification stage. A second amplification stage is coupled to the storage element and configured to receive the potential difference from the storage element when the storage element is decoupled from the first amplification stage and configured to deliver an offset-cancellation current. The offset-cancellation current is determined by the potential difference and a gain of the second amplification stage.

Abstract: A method is disclosed, including positioning a lead wire of a gate chip at a distance of less than 10 nm from a semiconductor heterostructure. The heterostructure includes a surface layer and a subsurface layer. The method also includes inducing an electrostatic potential in the subsurface layer by applying a voltage to the lead wire. The method also includes loading a charge carrier into the subsurface layer. The method also includes detecting the charge carrier in the subsurface layer of the semiconductor heterostructure by emitting a radio-frequency pulse using a resonator coupled to the at least one lead wire of the gate chip, detecting a reflected pulse of the emitted radio-frequency pulse, and determining a phase shift of the reflected pulse relative to the emitted radio-frequency pulse. The method also includes characterizing the quantum dot by measuring valley splitting of the quantum dot.

Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, a heat dissipation element and conductive balls. The insulating encapsulant is encapsulating the semiconductor die, and has a first surface and a second surface opposite to the first surface. The first redistribution layer is located on the first surface of the insulating encapsulant and includes at least one feed line and one ground plate. The second redistribution layer is located on the second surface of the insulating encapsulant and electrically connected to the semiconductor die and the first redistribution layer. The heat dissipation element is disposed on the first redistribution layer and includes a conductive base and antenna patterns, wherein the antenna patterns is electrically connected to the feed line and is electrically coupled to the ground plate of the first redistribution layer.

Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes (i) at least one inner dielectric layer, (ii) a plurality of interconnects located in the at least one inner dielectric layer, where the plurality of interconnects includes a pad located on a bottom metal layer of the substrate, (iii) an outer dielectric layer located over the at least one dielectric layer, (iv) at least one routing interconnect coupled to the plurality of interconnects, where the at least one routing interconnect is located over the outer dielectric layer, where the at least one routing interconnect is located below the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the at least one routing interconnect. The package includes a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.

Abstract: Methods and systems for optimizing amplifier operations are described. The described methods and systems particularly describe a feed-forward control circuit that may also be used as a feed-back control circuit in certain applications. The feed-forward control circuit provides a control signal that may be used to configure an amplifier in a variety of ways.

Abstract: A differential amplifier circuit includes a first transistor, a second transistor, a field effect transistor (FET) connected between the first transistor and the second transistor, a first current source connected to the first transistor, a second current source connected to the second transistor, and a control circuit. The first transistor and the second transistor generate a differential output signal in accordance with an input signal and a reference signal. The control circuit includes a first resistor and a second resistor connected in series between the drain and the source of the FET, a center node between the first resistor and the second resistor, a third resistor connected between the gate of the FET and the center node, and a variable current source. The variable current source supplies a control current to the third resistor in accordance with a gain control signal. The control circuit controls on-resistance of the FET.

Abstract: A variable gain amplifier according to an embodiment comprises a first path, a matching circuit, an amplifier circuit, a second path, and a third path. The first path includes an attenuation circuit, has one end connected to a first input terminal, and attenuates an input signal and outputs an attenuated signal. The matching circuit has one end connected to the other end of the first path. The amplifier circuit has an input connected to the other end of the matching circuit and an output connected to a first output terminal, and amplifies an input signal. The second path is connected in parallel to the first path. The third path has one end connected to the first input terminal, and the other end connected to the first output terminal.

Abstract: A bias circuit includes a current generating circuit generating an internal base current based on a reference current, a bias output circuit generating a base bias current based on the internal base current and outputting the base bias current to an amplifying circuit, and a temperature compensation circuit regulating the base bias current based on a temperature voltage reflecting a change in ambient temperature.

Abstract: An apparatus that generates and limits a bias current of a power amplifier is provided. The apparatus includes a bias current circuit that generates a bias current to bias the power amplifier, and critically limit an increase in bias current, and a band gap reference circuit that provides a reference voltage or a reference current to the bias current circuit. The bias current circuit is configured to critically limit the increase in bias current, as a first bias transistor that generates the bias current is converted from a triode region to a saturation region, based on the reference voltage or the reference current.

Abstract: Provided is a printed circuit board including a laminate that is formed by vertically stacking a plurality of insulating layers including a rigid insulating layer, a flexible insulating layer having a first region in vertical contact with at least one of the plurality of insulating layers and a second region located on an outer side of the laminate, and a first electronic element embedded in the flexible insulating layer.

Abstract: A closed-loop switch-mode boost converter includes a switching signal generator circuit, a switch-mode boost amplifier, a filter circuit, and an error amplifier circuit. The switching signal generator circuit receives an input signal and outputs a switching signal. A duty-cycle of the switching signal has a first non-linear relationship to an amplitude of the input signal. The switch-mode boost amplifier receives the switching signal and produces an output signal. An amplitude of the output signal has a second non-linear relationship to the duty-cycle of the switching signal, and the output signal has a linear relationship to the input signal based on the first and second non-linear relationships. The filter circuit receives the output signal and outputs a filtered output signal. The error amplifier circuit receives the input signal and the filtered output signal and produces a feedback control signal. The filtered output signal is adjusted based on the feedback control signal.

Abstract: An array of light emitting devices is mounted on a support surface with the transparent growth substrate (e.g., sapphire) facing up. A photoresist layer is then deposited over the top surface of the growth substrate, followed by depositing a reflective material over the top and side surfaces of the light emitting devices to encapsulate the light emitting devices. The top surfaces of the light emitting devices are then ground down to remove the reflective material over the top surface of the photoresist. The photoresist is then dissolved to leave a cavity over the growth substrate having reflective walls. The cavity is then filled with a phosphor. The phosphor-converted light emitting devices are then singulated to form packaged light emitting devices. All side light is reflected back into the light emitting device by the reflective material and eventually exits the light emitting device toward the phosphor. The packaged light emitting devices, when energized, appear as a white dot with no side emission (e.g.

Abstract: A semiconductor structure includes a semiconductor wafer, a first surface mount component, a second surface mount component and a first barrier structure. The first surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of first electrical connectors. The second surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of second electrical connectors, wherein an edge of the second surface mount component is overhanging a periphery of the semiconductor wafer. The first barrier structure is disposed on the semiconductor wafer in between the second electrical connectors and the edge of the second surface mount component, wherein a first surface of the first barrier structure is facing the second electrical connectors, and a second surface of the first barrier structure is facing away from the second electrical connectors.

Abstract: A multi-bandwidth envelope tracking (ET) integrated circuit (IC) (ETIC) is provided. The multi-bandwidth ETIC may be coupled to an amplifier circuit(s) for amplifying a radio frequency (RF) signal modulated in a wide range of modulation bandwidth. In examples discussed herein, the multi-bandwidth ETIC includes an ET voltage circuit configured to generate a modulated voltage based on a supply voltage. The supply voltage may be dynamically adjusted to cause the modulated voltage to transition quickly from one voltage level to another voltage level, particularly when the RF signal is modulated in a higher modulation bandwidth, without compromising efficiency of the ET voltage circuit. As such, the multi-bandwidth ETIC may generate different modulated voltages based on the modulation bandwidth of the RF signal, thus making it possible to employ the multi-bandwidth ETIC in a wide range of wireless communication devices, such as a fifth-generation (5G) wireless communication device.

Abstract: An instrumentation amplifier with an electronically adjustable gain is disclosed. The gain is adjusted by electronically controlling a resistance coupled to a feedback portion of the instrumentation amplifier. The resistance is adjusted by switches controlled by resistor-control signals references to a common mode voltage appearing at the input of the instrumentation amplifier. Accordingly, the instrumentation amplifier is capable of accommodating a high voltage range of common mode voltages while still providing controllable gain.

Abstract: A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards.