Abstract: A display device includes a display layer having a plurality of organic light-emitting diodes (OLEDs) separated by gaps, and an encapsulation layer covering a light-emitting side of the display layer. The encapsulation layer includes a bilayer having a plurality of polymer projections on the display layer, the plurality of polymer projections having spaces therebetween, and a first dielectric layer conformally covering the plurality of polymer projections and an underlying surface in the spaces between the polymer projections, the dielectric layer forming side walls along sides of the polymer projections. The side walls are aligned with the gaps between the OLEDS, and/or the encapsulation layer has multiple bilayers.

Abstract: A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

Abstract: The present disclosure provides a display substrate, a display device, and a manufacturing method of a display substrate. The display substrate of the present disclosure includes a substrate, a pixel defining layer located on the substrate, and a plurality of organic light emitting diodes arranged in an array, with a plurality of pixel accommodating holes provided in the pixel defining layer, and the organic light emitting diodes in one-to-one correspondence with the pixel accommodating holes, and located in the corresponding pixel accommodating holes; and a plurality of supporting structures in one-to-one correspondence with the pixel accommodating holes are formed on a side of the pixel defining layer distal to the substrate, and orthographic projections of the supporting structures on the pixel defining layer surround the corresponding pixel accommodating holes.

Abstract: A flexible circuitry layer may comprise a conductive mesh including a circuitry trace; and an interfacing component, comprising: a flexible substrate; a terminal electrically connected to the circuitry trace; and a connector configured to be detachably connected to an external device.

Abstract: There are provided an OLED device, a manufacturing method thereof, and a display apparatus. The OLED device includes: a first substrate; at least one auxiliary electrode disposed on the first substrate; a pixel defining structure disposed on the first substrate; and a plurality of light emitting units disposed on the first substrate. Each light emitting unit includes a first electrode, a second electrode and a light emitting layer, and the first electrode is located on a side of the second electrode distal to the first substrate, and the light emitting layer is located between the first electrode and the second electrode. The auxiliary electrode is disposed inside the pixel defining structure and electrically coupled to the first electrode.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: A display panel and a manufacturing method of a display panel are provided. The display panel includes an, a plurality of pixel definition portions, and a plurality of light-emitting portions. The plurality of pixel definition portions are disposed on the array substrate and separated apart from each other. A quantum dot material is provided on a side of one of the pixel definition portions, and the side of the pixel definition portions faces an adjacent pixel definition portion. Each of the light-emitting portions is disposed between two adjacent pixel definition portions, the light-emitting portions are configured to emit light, and the quantum dot material on the side of the pixel definition portion is illuminated under excitation of the light.

Abstract: A display substrate and a manufacture method thereof are provided. The display substrate includes a pixel definition layer and a controllable deformation layer; the pixel definition layer includes a plurality of openings for defining a plurality of pixel units; and the controllable deformation layer is on the pixel definition layer, and a horizontal extension of at least a portion of the controllable deformation layer in a direction parallel to the pixel definition layer is controllable. The organic functional layer of the display substrate has uniform morphology, so the display substrate has better display effect.

Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

Abstract: A device package and a method of forming a device package are described. The device package includes a plurality of posts disposed on a substrate. Each post has a top surface and a bottom surface that is opposite from the top surface. The device package also has one or more dies disposed on the substrate. The dies are adjacent to the plurality of posts on the substrate. The device package further includes a lid disposed above the plurality of posts and the one or more dies on the substrate. The lid has a top surface and a bottom surface that is opposite from the top surface. Lastly, an adhesive layer attaches the top surfaces of the plurality of posts and the bottom surface of the lid. The device package may also include one or more thermal interface materials (TIMs) disposed on the dies.

Abstract: The present disclosure provides a method of fabricating an organic light-emitting diode (OLED) display panel and an organic light-emitting diode (OLED) display panel. The OLED display panel includes a substrate; a driving circuit layer formed on the substrate; a pixel defining layer; and a light emitting functional layer, which are stacked. Protrusions are provided on a surface of the pixel defining layer away from the driving circuit layer in at least one of a plurality of pixel defining regions, and the light emitting functional layer is formed on the pixel defining layer and covers the sub-pixel regions. By forming the protrusions, a lateral transmission path of charges between adjacent sub-pixels is increased, resulting in a reduction in light leakage.

Abstract: The present technology provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel structure, insulating structures surrounding the channel structure and stacked to be spaced apart from each other, interlayer insulating films surrounding the insulating structures, respectively, and a gate electrode extending from between the interlayer insulating films to between the insulating structures and surrounding the channel structure. The insulating structures may include protrusion portions extending to cover edges of the interlayer insulating films facing the channel structure, and the gate electrode may extend between the protrusion portions which are adjacent to each other.

Abstract: An organic light emitting display device and a method of fabricating the same are provided. The organic light emitting display device includes a substrate, a pixel defining layer, an organic functional layer, a wire mesh structure, a cathode, and a protective layer. The pixel defining layer is disposed on the substrate and includes a plurality of pixel defining units. The organic functional layer is disposed on the anode of the substrate and in a space between any two adjacent pixel defining units. The cathode is disposed on the organic functional layer and in contact with the wire mesh structure.

Abstract: The present disclosure provides an array substrate, including: a base substrate; a planarization layer formed on the base substrate; a plurality of pixel electrodes formed on the planarization layer; and a pixel definition layer including a first pixel definition layer and a second pixel definition layer, the first pixel definition layer covering a periphery of each pixel electrode and exposing a central area of each pixel electrode, the second pixel definition layer being formed on the planarization layer between adjacent pixel electrodes and having a plurality of openings defining each sub-pixel unit; a bottom of a dam portion of the second pixel definition layer and a bottom of a dam portion of the first pixel definition layer adjacent thereto are separated by a predetermined distance, and a thickness of the second pixel definition layer is greater than a thickness of the first pixel definition layer.

Abstract: An array substrate includes a base substrate (1); a driving transistor (2) on the base substrate (1); an insulating layer (3) on the driving transistor (2), the insulating layer (3) comprising a via hole above a first electrode (21) of the driving transistor (2); a conductive portion (4) on the insulating layer (3); and a light emitting device (6) on the conductive portion (4) and electrically connected to the conductive portion (4). The conductive portion (4) may be electrically connected to the first electrode (21) of the driving transistor (2) through the via hole. The light emitting device (6) may be above the via hole, and an orthographic projection of the light emitting device (6) on the base substrate (1) may cover an orthographic projection of the via hole on the base substrate (1).

Abstract: A manufacturing method of an organic electroluminescent substrate, comprising: providing a base including a display area and a non-display area; and inkjet-printing the base such that such that the base is completely covered by an inkjet-printed area. The present disclosure can improve the thickness uniformity of the film formed in the display area.

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.

Abstract: A system for analyzing a semiconductor device includes an etching module, an analyzing module, and a computing module. The etching module may repeatedly etch an entire surface of a wafer at a same etch rate to expose a next surface of the wafer at a next depth where an object to be analyzed exits. The analyzing module may obtain two-dimensional structure information from each repeatedly etched surface of the wafer. The computing module may serially stack the repeatedly obtained two-dimensional structure information to generate a three-dimensional image.

Abstract: A silicon carbide semiconductor device includes, sequentially, a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a fourth semiconductor layer of a second conductivity type provided on the third semiconductor layer. A first electrode is provided on the first semiconductor layer, and a second electrode is provided on the fourth semiconductor layer. An impurity concentration of the second semiconductor layer is higher than that of the first semiconductor layer, and an impurity concentration of the third semiconductor layer is lower than that of the second semiconductor layer.

Abstract: Embodiments of a display device are described. A display device includes first and second sub-pixels. The first sub-pixel includes a first light source having a multi-layer stack and a first substrate configured to support the first light source. The multi-layer stack includes an organic phosphor film or a quantum dot (QD) based phosphor film configured to emit a first light having a first peak wavelength. The first substrate includes a first control circuitry configured to independently control the first light source. The second sub-pixel includes a second light source and a second substrate configured to support the second light source. The second light source has a microLED or a miniLED configured to emit a second light having a second peak wavelength that is different from the first peak wavelength. The second peak wavelength can be in the blue wavelength region of the visible spectrum. The second substrate includes a second control circuitry configured to independently control the second light source.