Abstract: A method of manufacturing an organic light emitting diode display panel includes: providing a substrate, and a flexible film layer is formed on the substrate; forming an anode layer on the flexible film layer, and a via hole region is disposed on the anode layer, a camera is disposed at a side of the substrate facing away from the via hole region, and an orthographic projection region of the camera on the substrate is located in the via hole region; forming a first bank and a second bank at intervals in the via hole region, and the first bank and the second bank are both located in the orthographic projection region of the via hole region; depositing a light emitting layer and a cathode layer sequentially, and the light emitting layer and the cathode layer are configured to form a light emitting unit; and packaging the display panel.

Abstract: A shared base plate includes a plurality of base portions to which a plurality of electronic components including semiconductor switching elements are to be mounted, and a terminal formed portion formed so as to extend from the base portion to the outer side. The terminal formed portion includes a discrimination terminal which is used as a terminal in one of a first semiconductor module and a second semiconductor module and which is not used as a terminal in the other one. If the discrimination terminal that is not used as a terminal is cut to be short, it becomes possible to easily discriminate the semiconductor module from another semiconductor module having the shared base plate by outer appearances.

Abstract: A method for analyzing a semiconductor device includes repeatedly etching an entire surface of a wafer at a same etch rate by a target depth to expose a next surface of the wafer. The method includes obtaining two-dimensional structure information from each repeatedly etched surface of the wafer and serially stacking the repeatedly obtained two-dimensional structure information to generate a three-dimensional image.

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

Abstract: A semiconductor module includes a semiconductor switching element, a multiple of bases, on at least one of which the semiconductor switching element is mounted, a molded resin that seals the semiconductor switching element and the multiple of bases, a multiple of terminals formed integrally with each one of the multiple of bases and provided extending from an outer periphery side face of the molded resin, and a recessed portion or a protruding portion having a depth or a height such that creepage distance between the multiple of terminals is secured, and formed so as to cross an interval between the multiple of terminals, in one portion of the outer periphery side face of the molded resin between the multiple of terminals.

Abstract: A display panel includes a thin film transistor layer (4), a grating layer (3), a transparent anode layer (2), an emission layer (1), and a colored layer (6) opposite the emission layer (1). The colored layer (6) may include a plurality of color filters. The grating layer (3) may be between the thin film transistor layer (4) and the transparent anode layer (2). The grating layer (3) may include a plurality of blazed gratings corresponding to the plurality of color filters, respectively.

Abstract: An organic light emitting display device includes: a thin film transistor disposed in a display area of a substrate; an insulating layer disposed on the thin film transistor; an organic light emitting element disposed on the insulating layer and connected to the thin film transistor; and an encapsulation layer covering the organic light emitting element. The encapsulation layer includes: a first inorganic layer extending from the organic light emitting element to a non-display area; an organic layer disposed on the first inorganic layer; a second inorganic layer extending from the organic layer to the non-display area; and an organic pattern layer disposed between the first inorganic layer and the second inorganic layer and spaced apart from the organic layer in the non-display area. At least a part of the first inorganic layer and at least a part of the second inorganic layer may contact each other in the non-display area.

Abstract: A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.

Abstract: A color conversion panel includes a first color conversion layer, a second color conversion layer, and a light wavelength conversion layer. The first color conversion layer includes a first semiconductor nanocrystal set for providing red light. The second color conversion layer neighbors the first color conversion layer and includes a second semiconductor nanocrystal set for providing first green light. The light wavelength conversion layer neighbors the second light conversion layer, may provide blue light, and includes a third semiconductor nanocrystal set for providing second green light.

Abstract: A display panel has a display area and a frame area located at at least one side of the display area. The display panel includes a base, at least one groove, a plurality of light-emitting devices, at least one first fixing component, and a sealant disposed at least in the frame area. At least one groove is arranged at a side of the base, and the at least one groove is located in the frame area. Each first fixing component includes a first portion and a second portion, and the first portion of the first fixing component is embedded in a groove. The sealant is located at the side of the base having the at least one groove, and the second portion of the first fixing component is embedded in the sealant.

Abstract: An LED module according to the present invention includes an LED unit 2 and a case 1, where the LED unit includes an LED chip 21, and the case 1 includes a main body 11 made of a ceramic material and a pad 12a on which the LED unit 2 is mounted. The outer edge 121a of the pad 12a is positioned inward of the outer edge 2a of the LED unit 2 as viewed in plan. These arrangements prevent the light emission amount of the LED module A1 from reducing with time.

Abstract: A method of manufacturing a display apparatus includes: forming a first lower lift-off layer, a first upper lift-off layer, and a first photoresist layer on a substrate on which a first pixel electrode is formed; forming a first masking layer including a first photoresist pattern, a first upper lift-off pattern, and a first lower lift-off pattern, which expose the first pixel electrode, by partially removing the first photoresist layer, the first upper lift-off layer, and the first lower lift-off layer; forming a first light emitting layer and a first counter electrode on the first pixel electrode by using the first masking layer; forming a first passivation layer on the first counter electrode; and removing the first masking layer.

Abstract: A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

Abstract: An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.

Abstract: An apparatus for and a method of manufacturing a display apparatus are provided. Transmittance of an opening area may be improved by not forming some layers in the opening area. The display apparatus includes a substrate, a pixel defining layer disposed on the substrate, a first common layer disposed in a first opening of the substrate, and a second common layer disposed in a second opening of the substrate. The substrate includes a first display area, an opening area in the first display area, a peripheral area surrounding at least a portion of the opening area, and a second display area extended from the peripheral area to an edge of the first display area. The pixel defining layer may include the first opening in the first display area, and the second opening in the second display area.

Abstract: An OLED display panel and an encapsulating method of the same are provided. The OLED display panel includes a base substrate; an OLED device disposed on the base substrate; and a thin film encapsulating layer. The thin film encapsulating layer includes a first inorganic layer, an organic layer, and a second inorganic layer. The organic layer comprises a lower surface contacted to the first inorganic layer, an upper surface away from the first inorganic layer, and a plurality of side surfaces connected to the upper surface and the lower surface, an orthogonal projection of the upper surface projecting on the base substrate is disposed within an orthogonal projection of the lower surface projecting on the base substrate, and each of the plurality of side surfaces is inclined.

Abstract: In one embodiment, a semiconductor device includes a substrate, a lower pad provided above the substrate, and an upper pad provided on the lower pad. The lower pad includes a first pad and a plurality of first connection portions provided on the first pad, and the upper pad is provided on the plurality of first connection portions, or the upper pad includes a second pad and a plurality of second connection portions provided under the second pad, and the lower pad is provided under the plurality of second connection portions.

Abstract: A method for manufacturing the pixel definition layer includes forming a photolithographic material film on a substrate; performing a pre-drying treatment, a first exposure treatment, and a development treatment sequentially on the photolithographic material film to form an initial pattern of the pixel definition layer; and performing a second exposure treatment and a curing treatment sequentially on the initial pattern to form a final pattern of the pixel definition layer.

Abstract: Disclosed is an array substrate including a base substrate, and a first electrode, a pixel define layer, a light-emitting layer and a second electrode which are sequentially disposed on the base substrate. The pixel define layer has a plurality of openings each having two opposite surfaces. The two opposite surfaces include a first surface proximal to the base substrate and a second surface distal from the base substrate. The second surface is coplanar with a surface of the pixel define layer distal from the base substrate. An orthographic projection of the second surface on the base substrate is within an orthographic projection of the first surface on the base substrate. The pixel define layer includes a pixel define body and an electrode repairing material layer. The electrode repairing material layer is disposed on a side of the pixel define body, and repairs the second electrode.

Abstract: A display device, an electronic device and a manufacturing method of a display device are disclosed. The display device includes a silicon-based organic light-emitting display panel, a heat dissipation film layer, and a flexible circuit board. The silicon-based organic light-emitting display panel includes a silicon substrate, a first electrode of a display component, an organic light-emitting layer, and a second electrode of the display component, which are stacked sequentially; the heat dissipation film layer is at a non-display side of the silicon-based organic light-emitting display panel; the flexible circuit board is at least partially at a side of the heat dissipation film layer away from the silicon-based organic light-emitting display panel; and the flexible circuit board is configured to transmit electrical signals to a gate drive circuit, a data drive circuit, and the second electrode of the display component.