Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition, particularly for deep UV applications. The antireflective compositions of the invention comprise a photoacid generator that is activated during exposure of an overcoated photoresist. Antireflective compositions of the invention can significantly reduce undesired footing of an overcoated resist relief image.

Abstract: A phase shift mask having transmission properties that are dependent at least in part on an intensity of an incident light beam. The phase shift mask has a mask substrate that is substantially transparent to the incident light beam. A first phase shift layer is disposed on the mask substrate. The first phase shift layer has a refractive index that is nonlinear with the intensity of the incident light beam. The refractive index of the first phase shift layer changes with the intensity of the incident light beam on the phase shift mask. By using a first phase shift layer on the phase shift mask that has a refractive index that is non linear with the intensity of the incident light beam, properties of a light beam transmitted through the first phase shift layer, such as interference patterns in the transmitted light beam, can be adjusted by adjusting the intensity of the incident light beam.

Abstract: A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.

Abstract: A method of producing a semiconductor chip includes (1) a first exposure step for exposing a device range inside a chip on a substrate, to a repetition pattern including a line and a space, wherein an exposure region of the repetition pattern has a size greater than the device range inside the chip, and (2) a second exposure step for exposing the device range inside the chip on the substrate, to a pattern which includes (i) a first line being parallel to the line of the repetition pattern and having substantially the same linewidth as that of the line or a first space being parallel to the space of the repetition pattern and having substantially the same width, and (ii) a second line of a width larger than the line of the repetition pattern or a second space of a width larger than the space of the repetition pattern. The first line overlaps with a portion of lines of the repetition pattern, or the first space overlaps with a portion of spaces of the repetition pattern.

Abstract: The inventive pattern forming method for transferring a bright line pattern to a photoresist material with a photomask having the bright line pattern includes a step of transferring the bright line pattern of the photomask to the photoresist material by exposure with a light exposure of at least four times and not more than 10 times the light exposure photosensitizing the photoresist material and inverting solubility. Thus, excellent CD-focus characteristics are attained thereby obtaining a pattern forming method and a method of fabricating a device with small dimensional dispersion.

Abstract: Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n1−n2)2/(n1+n2)2 is 0.15 or less, wherein n1 and n2 is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.

Abstract: An exemplary Full Phase patterning method involves patterning gates to increase process margins from conventional methods. This technique can define all poly patterns with a phase mask, using only a field or trim mask to resolve conflicts in the phase mask. The trim mask exposes a series of lines that either separates the different phase areas where patterns not desired or minimizes the range of sizes of the phase patterns next to a critical gate area.

Abstract: The present invention provides a rinsing solution for lithography with which finely processed parts of a resist pattern can be well rinsed without corroding a metallic film made of Al, Al—Si, Al—Si—Cu, etc. and which is economically advantageous and has a high safety; and a method for processing a substrate with the use of the same. The rinsing solution contains at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and ethyl lactate.

Abstract: In forming linear circuit patterns running in vertical and horizontal directions, phases are arranged such that phases between proximate opening patterns are reversed. Type A phase conflict patterns have the same phase and are proximate to each other. Type B phase conflict patterns have reverse phases and are brought into contact with each other. Patterns for resolving the phase conflicts are generated, and a phase mask having a conflict resolving pattern and a complementary phase mask for forming a design pattern complementary therewith are subjected to multiple exposures on a substrate. Circuit patterns having a very small pitch which have been regarded to be difficult to manufacture can be manufactured by the multiple exposure of at most two sheets of the phase-shifting masks and a semiconductor integrated circuit device can be manufactured at low cost by designing the circuit patterns in a short period of time.

Abstract: A process for massively producing tape type flexible printed circuits is provided. The steps of pressing, etching and insulating are executed on a flexible insulation tape in reel-to-reel fashion. Thereafter, the flexible insulation tape is punched to form sprocket holes and cut along the parallel lines where the sprocket holes arrange on to become several winds of narrower flexible circuit tapes. Each flexible circuit tape has tape type flexible printed circuits and sprocket holes at two sides.

Abstract: The present invention provides a mesoporous material comprising at least one region of mesoporous material patterned at a lithographic scale. The present invention also provides a a method for forming a patterned mesoporous material comprising: coating a sol on a substrate to form a film, the sol comprising: a templating molecule, a photoactivator generator, a material capable of being sol-gel processed, water, and a solvent; and exposing the film to light to form a patterned mesoporous material.

Abstract: A process for forming a negative image useful as a printing plate is disclosed. A photosensitive assembly that comprises (a) a hydrophilic support, (b) a first layer that comprises a polymer that is soluble or dispersible in an aqueous alkaline solution, (c) a second layer that comprises at least one o-quinonediazide compound, and (d) an infrared absorbing compound is: (1) flood exposed with ultraviolet radiation; (2) imagewise exposed with infrared laser radiation; and (3) developed to produce the negative image.

Abstract: The invention provides a microfabrication process which may be used to manufacture a MEMS device. The process comprises depositing one or a stack of layers on a base layer, said one layer or an uppermost layer in said stack of layers being a sacrificial layer; patterning said one or a stack of layers to provide at least one aperture therethrough through which said base layer is exposed; depositing a photosensitive layer over said one or a stack of layers; and passing light through said at least one aperture to expose said photosensitive layer.

Abstract: Herein disclosed is an exposure technology for a semiconductor integrated circuit device which has a pattern as fine as that of an exposure wavelength. The technology contemplates to improve the resolution characteristics of the pattern by making use of the mutual interference of exposure luminous fluxes.

Abstract: Planar microfluidic devices are laminate structures having a matrix layer at an upper side laminated at an interface to a lower substrate layer. The structure has one or more cavities extending from the upper side to the interface. A membrane is laminated on the upper side of the structure thereby to form a fluid barrier for the cavities. Devices for use as electrochemical sensors further include an electrode at the laminate structure interface below the matrix layer cavity and a well through the substrate layer below the electrode for electrical communication.

Abstract: A method for removing organic material in the fabrication of structures includes providing a substrate assembly having an exposed organic material and removing at least a portion of the exposed organic material using a composition including sulfur trioxide (SO3) in a supercritical state. For example, the exposed organic material may be selected from the group of resist material, photoresist residue, UV-hardened resist, X-ray hardened resist, carbon-fluorine containing polymers, plasma etch residues, and organic impurities from other processes. Further, organic material removal compositions for performing such methods are provided.

Abstract: A method of fabricating a mask (316) for patterning a semiconductor wafer. The mask (316) includes elliptical (340) or rounded features formed using an elliptical-shaped energy beam (350). Undesired stair-step shaped edges (344) of the oval (340) or rounded features formed by using a substantially circular-shaped energy beam to form the oval or rounded features are smoothed with the elliptical-shaped energy beam (350). A method of fabricating a semiconductor device with the mask (316) is included. The elliptical-shaped energy beam (350) may also be used to directly pattern a semiconductor wafer.

Abstract: A process of forming a resist image in a microelectronic substrate comprises the steps of contacting the substrate with a composition first comprising carbon dioxide and a component selected from the group consisting of at least one polymeric precursor, at least one monomer, at least one polymeric material, and mixtures thereof to deposit the component on the substrate and form a coating thereon; then imagewise exposing the coating to radiation such that exposed and unexposed coating portions are formed; then subjecting the coating to a second composition comprising carbon dioxide having such that either one of the exposed or the unexposed coating portions are removed from the substrate and the other coating portion is developed and remains on the coating to form an image thereon.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.