Abstract: An electronic assembly for conducting heat from a semiconductor device, such as a power flip chip, attached to a substrate. The substrate has a first region with conductors thereon, a second region surrounding and supporting the first region, and a third region surrounding and supporting the second region, with the second region being more flexible than the first and third regions. The chip is mounted to the first region of the substrate, and has solder connections on a first surface thereof that are registered with the conductors on the first region of the substrate. A heat-conductive member thermally contacts a second surface of the chip oppositely disposed from the first surface. A biasing element contacts the first region of the substrate to bias the chip into thermal contact with the heat-conductive member.

Abstract: Multilayer thin film wirings are formed on both front and back surfaces of a base substrate that is made of a metal or alloy plate. The base substrate is cut into the front surface side and the back surface side. Then, the base substrates are selectively removed to expose inner electrode pads, on which flip chip type semiconductor chips are mounted.

Abstract: A semiconductor package with a heat dissipating structure is provided, including a lead frame with a die pad for allowing a chip to be mounted on an upper surface of the die pad, and a heat sink abutting against a lower surface of the die pad. A top surface of the heat sink, in contact with the lower surface of the die pad, is formed with at least a recessed portion. During a molding process of using a resin material to form an encapsulant for encapsulating the chip, lead frame and heat sink, the resin material fills into the recessed portion and forms a supporting member between the die pad and heat sink to provide support for a central portion of the die pad, so as to prevent the chip from cracking in a step of building up a packing pressure of the molding process, thereby assuring yield and reliability of fabricated products.

Abstract: An optical integrated circuit element package comprises a substrate, an upper chip, a lower chip, an optical-transparent underfill, and a sealing compound. The substrate has a plurality of solder balls disposed on a surface of the substrate, a plurality of bonding pads electrically connected to the solder balls, a cover attached to the other surface of the substrate, and a cavity to expose the cover. The upper chip is provided with a plurality of bumps and is adhered to the exposed cover in the cavity by a thermal gap fill. The lower chip has a plurality of bonding pads electrically connected to the plurality of bumps of the upper chip and has a plurality of bumps electrically connected to the plurality of bonding pads of the substrate. The optical-transparent underfill is disposed between the lower chip and the upper chip. The sealing compound hermetically seals the space between the lower chip and the substrate.

Abstract: The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed.

Abstract: A vertically integrated chip scale package (CSP) assembly comprising two or more single chip package subassemblies having an upper level CSP subassembly superimposed directly above a lower level CSP subassembly. The lower-most CSP subassembly in the vertical stack contains an array of solder balls for interconnection to a printed wiring board. The vertical electrical connection between the upper and lower level package subassemblies is accomplished by using wire bonding from perimeter wire bonding pads located on an upper level substrate extension to matching perimeter wire bonding pads located on a lower level substrate extension that is longer in length than the upper level substrate extension. The stacked package subassemblies are bonded together by using a thin adhesive material, and the perimeter wire bonds are encapsulated by an encapsulant for protection.

Abstract: A package for semiconductor devices, and methods for making the same are provided. The package includes a low temperature co-fired ceramic body that has a plurality of conductive interconnect layers. The low temperature co-fired ceramic body includes at least one solder ball attach side. A plurality of solder ball attach pads are defined on the solder ball attach side(s) of the low temperature co-fired ceramic body. Each of the solder ball attach pads is in contact with a conductive via that is in electrical communication with at least one of the plurality of conductive interconnect layers, and each solder ball attach pad has metallic content that is limited to silver.

Abstract: A low profile multi-IC chip package for high-speed applications comprises a connector for electrically connecting the equivalent outer leads of a set of stacked primary semiconductor packages. In one embodiment, the connector comprises a two-part sheet of flexible insulative polymer with buses formed on one side. In another embodiment, the connector comprises multiple buses formed from conductive polymer. In further embodiments, the primary packages are stacked within a cage and have their outer leads in unattached contact with buses within the cage or, alternatively, are directly fixed to leads or pads on the host circuit board.

Abstract: An electronic component has at least a first semiconductor chip module, a second semiconductor chip module, and a substrate to accommodate the semiconductor chip modules. In this case, active chip surfaces of the two semiconductor chip modules each have a central contact area, which are disposed to face each other. The individual solder contact areas formed on the central contact areas and corresponding with one another are opposite and aligned with one another and are electrically conductively connected.

Abstract: A socket coupled to a circuit board to receive a package of microelectronic device has one or more electrical contacts coupled to its outer surfaces. Each contact provides a low inductance shunt connection from the side of the package to the circuit board. The contact includes multiple adjacent, electrically conductive members, each including a rigid portion and a flexible portion projecting from the rigid portion. The flexible portion is positioned to be in physical contact with a corresponding electrical conductor on an outer surface of the package when the package is coupled to the socket. At least one adjacent pair of the electrically conductive members conduct current in opposite directions to provide mutual inductance. The contact further includes a dielectric layer sandwiched between each two adjacent rigid portions of the conductive members.

Abstract: A stacked assembly of integrated circuit semiconductor devices includes a stack of integrated circuit semiconductor devices supported by a printed circuit board (PCB). One or more multiconductor insulating assemblies provide an interface between terminals of the integrated circuit semiconductor devices and external circuitry.

Abstract: A method for making an electronic device having an integrated circuit chip connected to an antenna. A chip is transferred into an impression provided in a substrate made of insulating material. The chip is connected to an antenna by hot lamination of an insulating support-sheet bearing the antenna. The method ensures a high quality electrical connection between the chip and the antenna, and enables the connection of a chip matrix with a plurality of antennae in a large-size circuit to be produced in one single step.

Abstract: A lead frame and a semiconductor device fabricated by using the same. The lead frame comprises: first and second band shaped members disposed parallel to each other; a plurality of island portions for mounting semiconductor pellets thereon having first end portions connected to the first band shaped member; coupling strip each provided for one of the island portions whose first end portion connects to a second end portion of each of the island portions and whose second end portion connects to the second band shaped member. The lead frame further comprises at least one electrode portion for each of the island portions and electrically coupled with a corresponding electrode of the semiconductor pellet. The at least one electrode portion is disposed between each of the island portions and the second band shaped member, a first end portion thereof is connected to the second band shaped member, and a second end portion thereof is opposed to the second end portion of each of the island portions.

Abstract: A semiconductor device in a computer system is disclosed that includes a die having an active surface bearing integrated circuitry, the die including a plurality of bond pads thereon at least some of which are connected to the integrated circuitry and having at least one electrically conductive wire bond made between first and second bond pads of the plurality of bond pads for providing external electrical connection between the two bond pads.

Abstract: A stackable FBGA package is configured such that conductive elements are placed along the outside perimeter of an integrated circuit (IC) device mounted to the FBGA. The conductive elements also are of sufficient size so that they extend beyond the bottom or top surface of the IC device, including the wiring interconnect and encapsulant material, as the conductive elements make contact with the FBGA positioned below or above to form a stack. The IC device, such as a memory chip, is mounted upon a first surface of a printed circuit board substrate forming part of the FBGA. Lead wires are used to attach the IC device to the printed board substrate and encapsulant is used to contain the IC device and wires within and below the matrix and profile of the conductive elements.

Abstract: A method and apparatus for producing buried ground planes in a silicon substrate for use in system modules is disclosed. Conductor patterns arc printed on the surface of the silicon substrate. Pores are created in the printed conductor patterns by a chemical anodization process. The pores are then filled with a conductive metal, such as tungsten, molybdenum, or copper by a selective deposition process to produce a low impedance ground buried in the substrate.

Abstract: A semiconductor module achieving higher density of the semiconductor module itself as well as of being disposed in an area-efficient manner relative to another electronic component, such as a mother board and the like. The semiconductor module includes a mounting substrate having, on an underside, a solder ball for connecting to an interconnection of a mother board and semiconductor packages mounted in multiple layers on the top side of the mounting substrate and connected to electrodes on the mounting substrate.

Abstract: A thin filmed fully-depleted silicon-on-insulator (SOI) metal oxide semiconductor field defect transistor (MOSFET) utilizes a local insulation structure. The local insulative structure includes a buried silicon dioxide region under the channel region. The MOSFET body thickness is very small and yet silicon available outside of the channel region and buried silicon dioxide region is available for sufficient depths of silicide in the source and drain regions. The buried silicon dioxide region can be formed by a trench isolation technique or a LOCOS technique.

Abstract: Provided is a water cooling type cooling block for a, semiconductor chip which can increase heat transfer efficiency by inducing turbulent flow even if a coolant flows at low speed. The cooling block includes a heat transfer plate contacting the semiconductor chip, a case connected to the heat transfer plate to enclose the heat transfer plate so as to accommodate a coolant for cooling heat from the heat transfer plate and having a coolant inlet port at its first end and a coolant outlet port at its second end so as to allow movement of the coolant, and a sealing means hermetically sealing the heat transfer plate and the case.

Abstract: Upon the manufacture of a non-leaded type semiconductor device having an encapsulater, and a gate cured resin and air vent cured resins which remain as a result of the exposure of leads and tub-suspension leads to a mounting surface of the encapsulater and the formation of the encapsulater, a groove through which a resin flows is not provided over the full circumference of a cavity defined in a mold die for forming the encapsulater. A gate and air vents are provided outside an area in which no groove is defined. The flow of the resin between the cavity and each of the gate and air vents is made through a gap or space defined between each of the adjacent leads and each tub-suspension lead. If the leads and the tub-suspension leads are cut at a groove-free place, then the occurrence of resin waste and a resin crack can be restrained because the gate cured resin and the air vent cured resins have their surfaces which are flat and level with the leads and the tub-suspension leads.