Abstract: A compensation device that can include a bias-able device, a bias circuit that provides the bias-able device with a bias current, a signal conditioner selectively coupled to the bias-able device, and an emulator. The signal conditioner and emulator can divert current from the bias-able device in an operational and calibration mode, respectively. In calibration mode, the emulator generates a compensation current that is combined with a sense current so that the sense current equals the bias current.

Abstract: A voltage boost system, IC and design structure are disclosed for boosting a supply voltage while preventing forward biasing of n-well structures. The voltage boost system may include a first voltage boost circuit producing a first boosted voltage using at least one voltage boost sub-circuit, each of the at least one voltage boost sub-circuit having an output passgate in an n-well; a second voltage boost circuit producing a second boosted voltage, the n-well of each output passgate being biased using the second boosted voltage, wherein the second boosted voltage is greater than the first boosted voltage. Voltage boost sub-circuits may use gate control circuitry to reduce gate oxide stress, thus allowing lower voltage level FETs to be used.

Abstract: A current generator, including a chopper stabilization operational amplifier, a transistor, and an impedance unit is provided. The chopper stabilization operational amplifier includes a first input terminal, a second input terminal, and an output terminal. The transistor includes a gate coupled to the output terminal of the chopper stabilization operational amplifier, a first source/drain coupled to the first input terminal of the chopper stabilization operational amplifier, and a second source/drain serving as a current output terminal of the current generator. The impedance unit includes a first terminal coupled to the first source/drain of the transistor, and a second terminal coupled to a first voltage.

Abstract: A fast reference circuit having active feedback includes a bias supply circuit and a variable divider circuit connected by an active feedback path to the bias supply circuit, and a comparator circuit connected to the variable divider circuit, the bias supply circuit, and a reference node of the variable divider circuit. In one embodiment, a start-up circuit initially discharges a potential at the bias supply and comparator circuits, then initializes a reference voltage at the reference node at about zero volts to improve repeatability. In one embodiment, the variable voltage divider comprises an impendence that is trimmed based on a sheet resistance of a process used to fabricate the fast reference circuit, and further comprises a variable reference current circuit coupled to the impedance and configured to generate a current having a value based on a desired reference voltage and to conduct the current through the impedance, thereby generating the reference voltage associated therewith.

Abstract: Disclosed is a PLL circuit including a phase frequency detector (PFD) for comparing phase and frequency between an input signal and an output signal, a charge pump circuit for charging a capacitor when an up-signal from the PFD is activated, discharging the capacitor when a down-signal is activated, and for outputting the terminal voltage of the capacitor as a control voltage, and a VCO for outputting an output signal of a frequency in accordance with the control voltage. An output of the VCO is fed back as an output signal to the PFD as input. The PFD includes a delay adjustment circuit for exercising control for resetting the up-signal and the down-signal with a preset delay as from a time point both up-signal and the down-signal have been activated. There is also provided a comparator amplifier circuit for comparing a reference voltage, corresponding to a control voltage when both up-signal and down-signal are activated, to supply first and second control signals to the delay adjustment circuit.

Abstract: A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

Abstract: A two stage voltage boost circuit, IC and design structure are disclosed for boosting a supply voltage using gate control circuitry to reduce gate oxide stress, thus allowing lower voltage level FETs to be used. The voltage boost circuit may include a first stage for boosting the supply voltage to a first boosted voltage and a second stage for boosting the first boosted voltage to a second boosted voltage. Each stage may include a passgate and a gate control circuit for generating an on-state gate voltage level for the respective passgate adjusted to reduce gate oxide voltage stress on the passgate. The circuit may also include a precharge circuit for coupling a voltage on a high node of the second stage to a gate node of a precharge transistor thereof for disabling the precharge transistor and preventing leakage back to a power supply voltage.

Abstract: A mobile telephone is provided that includes a plurality of circuit blocks and adapted to cut off the supply of power source voltage to any one of the circuit blocks. The mobile telephone also includes an interblock interface circuit provided on a signal path between an elected circuit block and a branch point at which the signal path branches into different branch paths so as to connect to other circuit blocks. The interblock interface circuit includes a signal gate for preventing signal transmission from the elected circuit block to the other circuit blocks, and includes a storage unit for storing a signal right before the power cut-off.

Abstract: A booster circuit includes a first transistor performing a first on-off operation based on a first control signal and a second transistor performing a second on-off operation based on the first control signal. The first on-off operation and the second on-off operation are reversed. A third transistor performs the first on-off operation based on a second control signal. The second control signal has a phase opposite the first control signal. A fourth transistor is included in a metal oxide semiconductor capacitor.

Abstract: A delay adjustor for adjusting the delay time of a signal, the adjustor comprising: a first capacitance unit and a variable capacitance unit serially coupled to the first capacitor wherein the capacitance of the variable capacitance unit is adjusted according to a first control signal and the variable capacitance unit comprises a plurality of second capacitors and at least a first switch coupled to the at least one capacitor of the second capacitors.

Abstract: In a semiconductor integrated circuit device including a charge pump circuit flowing an operating current therethrough, a current circuit is adapted to receive the operating current and a substantially constant current and generate an inverse current relative to the operating current and the substantially constant current.

Abstract: A single-ended low pass filter and its double-ended or balanced version comprising a first coil (Lp1) coupled between a first input (Vin1) and a first output (Vout1) terminal of the filter, a second coil (Lp2) coupled between a second input (Vin2) and a second output (Vout2) terminal of this filter, and a capacitor (C) coupled between the first and second output terminals.

Abstract: A semiconductor device including a bias voltage generator formed from a junction field effect transistor (JFET). The JFET includes a control gate terminal and a first and a second source/drain terminal. The first and second source/drain terminals can form a first terminal of a p-n junction and the control gate terminal can form a second terminal of the p-n junction. The first terminal of the p-n junction can be provided with a first potential. The second terminal can be left essentially floating to provide a bias voltage. A bias receiving circuit can receive the bias voltage. The bias receiving circuit can be in close proximity on the semiconductor device to the bias voltage generator.

Abstract: A circuit is provided that (in one implementation) includes a first transistor having a first drain terminal, first gate terminal, and a first source terminal. The first drain terminal is connected to the first gate terminal, the first source terminal is connected to a first voltage. The circuit further includes a second transistor having a second drain terminal, second gate terminal, and a second source terminal. The second gate terminal is connected to both the first gate terminal and the first drain terminal, and the second source terminal is connected to the first voltage. The circuit further includes a third transistor having a third drain terminal, a third gate terminal, and a third source terminal. The third drain terminal is connected to the first drain terminal, and the third source terminal is connected to both the third gate terminal and a second voltage that is lower than the first voltage.

Abstract: A circuit and method for producing an output voltage that replicates an input voltage. A circuit comprises an amplifier stage configured to amplify a difference between an input voltage and a feedback voltage. An output stage is configured to produce an output voltage equal to the input voltage. The output stage configured to be driven by the difference between the input voltage and the feedback voltage. The output stage further comprises a main supply current path configured to provide a first current from a main supply source, the first current providing at least a portion of the output voltage, and a current management circuit configured to provide a second current from an auxiliary supply source, the second current providing any remaining portion of the output voltage not provided by the first current.

Abstract: A current mirror circuit includes a reference current source that generates a reference current, a reference transistor, a mirror transistor and a ratioed body bias feedback unit. The reference transistor has a first node that is coupled to the output of the reference current source, a gate that is coupled to the first node and a second node coupled to a common voltage. The mirror transistor has a gate coupled to the first node. The ratioed body bias feedback unit generates a body bias voltage coupled to the body of the reference transistor and the body of the mirror transistor. The ratioed body bias feedback unit is configured to adjust the body bias voltage in relationship to the common voltage so that the reference transistor and the mirror transistor each have a threshold voltage within a predefined range.

Abstract: A switched capacitor narrow band pass filter includes a first switch including a first pole movable between two first switch terminals, a second switch including a second pole moveable between second switch terminals, and a third switch including additional poles movable between third switch terminals. The filter further includes an effective capacitor coupled to the first pole and a plurality of matchinq capacitors coupled respectively to the second and third switch terminals. The additional poles are coupled to the third switch terminals according to a first predetermined sequence and to the third switch terminals at a predetermined frequency. A differential amplifier assembly includes two positive and two negative terminals coupled to the additional poles in a second predetermined sequence wherein two of the additional poles are coupled to the positive terminals and two others of the additional poles are coupled to the negative terminals for signal summation.

Abstract: A stacked MOS configuration for use in short channel length analog circuit technologies is provided. The stacked MOS configuration comprises a plurality of short-channel MOS transistors coupled in series and sharing a common gate terminal. In an embodiment, a first peripheral transistor provides a drain terminal for the stacked MOS configuration. A second peripheral transistor provides a source terminal for the stacked MOS configuration. Adjacent transistors in the stacked MOS configuration are connected in a drain-to-source configuration.

Abstract: An internal voltage detection circuit and an internal voltage generation device using the same are disclosed. The internal voltage detection circuit includes a first detect signal generator for generating a first detect signal to detect a level of an internal voltage corresponding to an operating temperature of a memory cell, a second detect signal generator for generating a second detect signal to detect a specific level of the internal voltage corresponding to a preset temperature, and a detect signal clamp unit for comparing a level of the first detect signal and a level of the second detect signal with each other and clamping the first detect signal according to a result of the comparison.

Abstract: A PLL circuit includes a phase detector that compares the phase of an input clock with the phase of a feedback clock so as to generate pull-up and pull-down control signals. A low pass filter pumps a voltage in response to the pull-up and pull-down control signals, and removes a noise component from the pumped voltage so as to output a control voltage. A buffer that controls voltage so as to generate a bias voltage having a smaller swing width than the control voltage. A voltage controlled oscillator receives the bias voltage and oscillates an output clock. A clock divider divides the frequency of the output clock at a predetermined ratio so as to generate the feedback clock.