Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.

Abstract: A sealing mechanism is used to seal a sink of a case via a cover of a two-phase water-cooling heat dissipation device. The sealing mechanism includes a driving module and a guiding module. The driving module is disposed on the cover. The guiding module is linked with the driving module and includes a first connection component, a second connection component and a third connection component. The first connection component is driven by the driving module and includes a first constraining structure used to engage with and disengage from a restraining component for constraint of the cover. The second connection component is crossed by the first connection component. The third connection component is rotatably disposed on the cover. An end of the third connection component is connected to the second connection component, and the other end of the third connection component is connected to the first connection component.

Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Abstract: An optical interconnect structure including a base substrate, an optical waveguide, a first reflector, a second reflector, a dielectric layer, a first lens, and a second lens is provided. The optical waveguide is embedded in the base substrate. The optical waveguide includes a first end portion and a second end portion opposite to the first end portion. The first reflector is disposed between the base substrate and the first end portion of the optical waveguide. The second reflector is disposed between the base substrate and the second end portion of the optical waveguide. The dielectric layer covers the base substrate and the optical waveguide. The first lens is disposed on the dielectric layer and located above the first end portion of the optical waveguide. The second lens is disposed on the dielectric layer and located above the second end portion of the optical waveguide.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

Abstract: A container assembly and a container lid are provided. The container assembly includes a container body, a lid, a sleeved portion, an annular pressing portion, and a straw. The container body has an opening portion at an upper end thereof. The lid is detachably disposed on the opening portion. The lid has an outer lid portion, an inner lid portion, and a connection portion, and the outer lid portion, the inner lid portion, and the connection portion jointly define a first heat insulation space. The connection portion has an annular abutting section, an enclosed end section, and an outer thread section arranged between the annular abutting section and the enclosed end section, and a distance between the enclosed end section and the annular abutting section is less than a distance between the enclosed end section and an inner lid top board of the inner lid portion.

Abstract: A method includes launching, from an optical fiber, fluorescent light of differing wavelengths generated by different fluorochromes attached to particles in a sample fluid; magnifying an image size from an end of the optical fiber to a first dichroic filter of a row of a plurality of dichroic filters in a de-multiplexing imaging array; alternatively reflecting the fluorescent light between the plurality of dichroic filters and a plurality of micro-mirrors to collimate the fluorescent light on odd numbered dichroic filters and re-image the fluorescent light on even numbered dichroic filters; band passing different wavelength ranges of the fluorescent light at each of the plurality of dichroic filters to de-multiplex the wavelength spectrum of the wavelength range of the fluorescent light; and detecting fluorescent light in each of the different wavelength ranges to count a number of each of the different particles in the sample fluid.

Abstract: Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A board-like connector, a single-arm bridge of a board-like connector, and a wafer testing assembly are provided. The board-like connector includes a plurality of single-arm bridges spaced apart from each other and an insulating layer. Each of the single-arm bridges includes a carrier, a cantilever extending from and being coplanar with the carrier, an abutting column, and an abutting end portion, the latter two of which extend from the cantilever and are respectively arranged at two opposite sides of the cantilever. The insulating layer connects the carriers of the single-arm bridges, and the abutting column of each of the single-arm bridges protrudes from the insulating layer. The abutting column and the abutting end portion of each of the single-arm bridges are configured to abut against two boards, respectively.

Abstract: A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion.

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed.

Abstract: An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.

Abstract: An integrated circuit package and a method of forming the same are provided. The integrated circuit package includes a photonic integrated circuit die. The photonic integrated circuit die includes an optical coupler. The integrated circuit package further includes an encapsulant encapsulating the photonic integrated circuit die, a first redistribution structure over the photonic integrated circuit die and the encapsulant, and an opening extending through the first redistribution structure and exposing the optical coupler.

Abstract: A semiconductor device includes an optical connector element and an optical coupler. The optical connector element includes a base structure, a first polymer via and a cladding layer. The base structure has a first surface and a second surface opposite to the first surface. The first polymer via passes through the base structure from the first surface to the second surface. The cladding layer is surrounding the first polymer via, wherein a refractive index of the cladding layer is different than a refractive index of the first polymer via. The optical coupler is disposed over the optical connector element, wherein the optical coupler receives optical signals from the first polymer via.

Abstract: An anti-stick titanium cookware and a method of manufacturing the same are provided. The anti-stick titanium cookware includes a titanium cookware body, a titanium cladding element, a heat-conducting element and an anti-stick layer. The titanium cookware body and the titanium cladding element are made of plate bodies, the titanium cladding element is welded on the lower surface of the titanium cookware body, and an interlayer space is formed between the titanium cladding element and the titanium cookware body. The heat-conducting element is accommodated in the interlayer space and contacts the lower surface of the titanium cookware body. The anti-stick layer is formed on the upper surface of the titanium cookware body. The heat-conducting element is fixed on the lower surface of the titanium cookware body through the titanium cladding element. The anti-stick layer is a titanium oxide film formed on the upper surface of the titanium cookware body.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A supporting layer is formed over a redistribution structure. A first planarization process is performed over the supporting layer. A lower dielectric layer is formed over the supporting layer, wherein the lower dielectric layer includes a concave exposing a device mounting region of the supporting layer. A first sacrificial layer is formed over the supporting layer, wherein the sacrificial layer filling the concave. A second planarization process is performed over the lower dielectric layer and the first sacrificial layer. A transition waveguide provided over the lower dielectric layer. The first sacrificial layer is removed. A semiconductor device is mounted over the device mounting region, wherein the semiconductor device includes a device waveguide is optically coupled to the transition waveguide.