Patents by Inventor Eugene J. O'Sullivan

Eugene J. O'Sullivan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High resistivity soft magnetic material for miniaturized power converter
    Patent number: 9653532
    Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
    Type: Grant
    Filed: July 30, 2016
    Date of Patent: May 16, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • Magnetic multilayer structure
    Patent number: 9601484
    Abstract: A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: March 21, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • LAMINATED MAGNETIC MATERIALS FOR ON-CHIP MAGNETIC INDUCTORS/TRANSFORMERS
    Publication number: 20170076852
    Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.
    Type: Application
    Filed: September 15, 2015
    Publication date: March 16, 2017
    Inventors: Hariklia Deligianni, William J. Gallagher, Sathana Kitayaporn, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Joonah Yoon
  • LAMINATED MAGNETIC MATERIALS FOR ON-CHIP MAGNETIC INDUCTORS/TRANSFORMERS
    Publication number: 20170076860
    Abstract: A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.
    Type: Application
    Filed: November 24, 2015
    Publication date: March 16, 2017
    Inventors: Hariklia Deligianni, William J. Gallagher, Sathana Kitayaporn, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Joonah Yoon
  • High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
    Patent number: 9590026
    Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: March 7, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Maurice Mason, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • LAMINATING MAGNETIC CORES FOR ON-CHIP MAGNETIC DEVICES
    Publication number: 20170062111
    Abstract: A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
    Type: Application
    Filed: November 10, 2016
    Publication date: March 2, 2017
    Inventors: Robert E. Fontana, JR., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • Laminating magnetic cores for on-chip magnetic devices
    Patent number: 9564165
    Abstract: A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: February 7, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert E. Fontana, Jr., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • Low degradation MRAM encapsulation process using silicon-rich silicon nitride film
    Patent number: 9515252
    Abstract: A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: December 6, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Anthony J. Annunziata, Chandrasekaran Kothandaraman, Gen P. Lauer, JungHyuk Lee, Nathan P. Marchack, Deborah A. Neumayer, Eugene J. O'Sullivan, Jeong-Heon Park
  • HIGH RESISTIVITY SOFT MAGNETIC MATERIAL FOR MINIATURIZED POWER CONVERTER
    Publication number: 20160336387
    Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
    Type: Application
    Filed: July 30, 2016
    Publication date: November 17, 2016
    Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • Laminating magnetic cores for on-chip magnetic devices
    Patent number: 9495989
    Abstract: A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: November 15, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert E. Fontana, Jr., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • Techniques for forming contacts for active BEOL
    Patent number: 9490164
    Abstract: In one aspect, a method for forming a contact to a device is provided which includes the steps of: forming a conformal etch stop layer surrounding the device; forming a dielectric layer over and covering the device; forming a contact trench in the dielectric layer, wherein the contact trench is present over the device and extends down to, or beyond, the etch stop layer; exposing a contact region of the device within the contact trench by selectively removing a portion of the etch stop layer covering a top portion of the device; and filling the contact trench with a conductive material to form the contact to the device. Other methods for forming a contact to a device and also to BEOL wiring are provided as are device contact structures.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: November 8, 2016
    Assignee: International Business Machines Corporation
    Inventors: Sebastian U. Engelmann, Steve J. Holmes, Qinghuang Lin, Nathan P. Marchack, Eugene J. O'Sullivan
  • HIGH RESISTIVITY IRON-BASED, THERMALLY STABLE MAGNETIC MATERIAL FOR ON-CHIP INTEGRATED INDUCTORS
    Publication number: 20160284787
    Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
    Type: Application
    Filed: June 19, 2015
    Publication date: September 29, 2016
    Inventors: Hariklia Deligianni, William J. Gallagher, Maurice Mason, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • HIGH RESISTIVITY SOFT MAGNETIC MATERIAL FOR MINIATURIZED POWER CONVERTER
    Publication number: 20160284788
    Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
    Type: Application
    Filed: June 19, 2015
    Publication date: September 29, 2016
    Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • HIGH RESISTIVITY SOFT MAGNETIC MATERIAL FOR MINIATURIZED POWER CONVERTER
    Publication number: 20160284451
    Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
    Type: Application
    Filed: March 24, 2015
    Publication date: September 29, 2016
    Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • HIGH RESISTIVITY IRON-BASED, THERMALLY STABLE MAGNETIC MATERIAL FOR ON-CHIP INTEGRATED INDUCTORS
    Publication number: 20160284786
    Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
    Type: Application
    Filed: March 24, 2015
    Publication date: September 29, 2016
    Inventors: Hariklia Deligianni, William J. Gallagher, Maurice Mason, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • METHOD OF FORMING AN ON-PITCH SELF-ALIGNED HARD MASK FOR CONTACT TO A TUNNEL JUNCTION USING ION BEAM ETCHING
    Publication number: 20160276579
    Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.
    Type: Application
    Filed: June 1, 2016
    Publication date: September 22, 2016
    Inventors: Michael C. Gaidis, Erwan Gapihan, Rohit Kilaru, Eugene J. O'Sullivan
  • LAMINATING MAGNETIC CORES FOR ON-CHIP MAGNETIC DEVICES
    Publication number: 20160260451
    Abstract: A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
    Type: Application
    Filed: May 9, 2016
    Publication date: September 8, 2016
    Inventors: Robert E. Fontana, JR., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • MAGNETIC MULTILAYER STRUCTURE
    Publication number: 20160260708
    Abstract: A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
    Type: Application
    Filed: May 17, 2016
    Publication date: September 8, 2016
    Inventors: Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • High resistivity soft magnetic material for miniaturized power converter
    Patent number: 9437668
    Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: September 6, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • Magnetic multilayer structure
    Patent number: 9384879
    Abstract: A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: July 5, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb