Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.

Abstract: A package structure includes a semiconductor die, a first insulating encapsulant, a plurality of first conductive features, an interconnect structure and bump structures. The semiconductor die includes a plurality of conductive pillars made of a first material. The first insulating encapsulant is encapsulating the semiconductor die. The first conductive features are disposed on the semiconductor die and electrically connected to the conductive pillars. The first conductive features include at least a second material different from the first material. The interconnect structure is disposed on the first conductive features, wherein the interconnect structure includes a plurality of connection structures made of the second material. The bump structures are electrically connecting the first conductive features to the connection structures, wherein the bump structures include a third material different from the first material and the second material.

Abstract: A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.

Abstract: A package assembly may include a package substrate, a package lid attached to the package substrate and including a plate portion, an outer foot extending from the plate portion, and an inner foot extending from the plate portion inside the outer foot, and an adhesive that adheres the outer foot to the package substrate and the inner foot to the package substrate.

Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.

Abstract: A health care device includes a health care body for positioning a body part of a user, so as to maintain a first specific positional relationship with the body part, wherein the body part has an acupoint; an acupoint work piece for performing a health care work onto the use through the acupoint; and a work piece holder having a first end connected to the health care body and a second end for fixing the acupoint work piece, so that under the first specific positional relationship, the acupoint work piece performs the health care work under the condition that the acupoint work piece has a second specific positional relationship with the acupoint. A health care body, method and system are also provided.

Abstract: A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) layer, and a lid structure. The package structure is disposed on the substrate. The TIM layer is disposed on the package structure. The TIM layer includes a liquid state metal material. The lid structure is disposed on the substrate and the TIM layer. The lid structure includes a trench facing the package structure. At least a portion of the TIM layer is located in the trench.

Abstract: A pickup apparatus for separating a semiconductor die adhered on an adhesive film therefrom includes a frame, an UV light emitting element, and a collector element. The frame is configurated to hold the adhesive film adhered with the semiconductor die thereon. The UV light emitting element is disposed inside the frame, where the adhesive film is disposed between the semiconductor die and the UV light emitting element. The collector element is disposed over the frame.

Abstract: A package structure includes a package substrate, a first semiconductor package and a second semiconductor package, an underfill material, a gap filling structure and a heat dissipation structure. The first semiconductor package and the second semiconductor package are electrically bonded to the package substrate. The underfill material is disposed to fill a first space between the first semiconductor package and the package substrate and a second space between the second semiconductor package and the package substrate. The gap filling structure is disposed over the package substrate and in a first gap laterally between the first semiconductor package and the second semiconductor package. The heat dissipation structure is disposed on the package substrate and attached to the first semiconductor package and the second semiconductor package through a thermal conductive layer.

Abstract: A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.

Abstract: A light string is comprised of a housing assembly, a light emitting source, a first conductive lead wire and a second conductive lead wire. The housing assembly is comprised of a light cap extending from a housing. A spacer plug secures a first and second conductive lead wire, and an light emitting source to the housing assembly. A first conductive lead wire and a second conductive lead wire each extend into the housing and are secured within the housing via the spacer plug. An insulative projection of the spacer plug is seated between the first conductive lead wire and the second conductive lead wire within the housing so as to prevent a direct electrical short between the first conductive lead wire and the second conductive lead wire. Glue is used to fill the housing to create a waterproof electrical connection.

Abstract: A method and system for transmitting and receiving data packets between two network nodes via one or more end-to-end connections. An interface is provided for selecting one or more possible end-to-end connection(s) or established end-to-end connection(s). The method and system may further comprise receiving a policy, wherein one or more selected end-to-end connections are established based, at least in part, on the policy. The policy may also restrict or promote selection of certain established end-to-end connection(s) via the interface provided. The selected and established end-to-end connection(s) are used for transmitting and receiving data packets.

Abstract: A structure including a first semiconductor die, an interposer and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and conductive vias disposed on the interconnect structure. The interposer includes a dielectric layer and through vias penetrating through the dielectric layer. The first insulating encapsulation laterally encapsulates the first semiconductor die and the interposer, wherein a thickness of the dielectric layer of the interposer substantially equals to a thickness of the first semiconductor die and a thickness of the first insulating encapsulation.

Abstract: A package structure includes a circuit substrate, a semiconductor package, a lid structure and a plurality of first spacer structures. The semiconductor package is disposed on and electrically connected to the circuit substrate. The lid structure is disposed on the circuit substrate covering the semiconductor package, wherein the lid structure is attached to the circuit substrate through an adhesive material. The plurality of first spacer structures is surrounding the semiconductor package, wherein the first spacer structures are sandwiched between the lid structure and the circuit substrate, and includes a top portion in contact with the lid structure and a bottom portion in contact with the circuit substrate.

Abstract: A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.

Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.

Abstract: An electrostatic discharge (ESD) circuit includes an ESD detection circuit, a clamp circuit and an ESD assist circuit. The ESD detection circuit is coupled between a first and a second node. The first node has a first voltage. The second node has a second voltage. The clamp circuit includes a first transistor having a first gate, a first drain, a first source and a first body terminal. The first gate is coupled to at least the ESD detection circuit by a third node. The first drain is coupled to the second node. The first source and the first body terminal are coupled together at the first node. The ESD assist circuit is coupled between the first node and the third node, and is configured to clamp a third voltage of the third node at the first voltage during an ESD event at the first node or the second node.

Abstract: A method for determining zero crossing occurrence in an alternating current (AC) signal with constant frequency of a permanent magnet synchronous motor (PMSM) includes: sampling the AC signal to obtain a plurality of data points; starting to count a number of consecutive data points that have sampled values with a same sign in a detection range, to generate a count value, wherein the consecutive data points are included in the plurality of data points; determining whether the count value is equal to a zero crossing determination value; and in response to the count value being equal to the zero crossing determination value, determining that a zero crossing occurs at a last data point of the consecutive data points.

Abstract: A structure including a substrate having a conductive pad and a connecting structure disposed on the conductive pad and electrically connected to the conductive pad. The connecting structure includes a first metallic layer disposed on the conductive pad, a first intermetallic compound layer disposed on the first metallic layer, a second intermetallic compound layer disposed on the first intermetallic compound layer and a second metallic layer disposed on the second intermetallic compound layer. The first metallic layer comprises copper. The first intermetallic compound layer comprises a first intermetallic compound. The second intermetallic compound layer comprises a second intermetallic compound different from the first intermetallic compound. The second metallic layer comprises tin. The first intermetallic compound contains copper, tin and one of nickel and cobalt.

Abstract: A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.