Abstract: There is provided a wiring board. The wiring board includes: a semiconductor substrate having a through hole and covered with an insulating film; a through electrode formed in the through hole; a first wiring connected to one end of the through electrode; and a second wiring connected to the other end of the through electrode. The semiconductor substrate includes: a semiconductor element and a first guard ring formed to surround the through hole. The semiconductor element includes a first conductivity-type impurity diffusion layer having a different conductivity-type from that of the semiconductor substrate and is electrically connected to the first wiring and the second wiring.

Abstract: The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film.

Abstract: An electronic component device of the present invention includes: a silicon package unit having a structure in which a through electrode provided to a silicon substrate while an electrode post connected to the through electrode is provided upright on an upper side of the silicon substrate; an electronic component mounted on the electrode post and having a connection terminal connected to the top end of the electrode post; and a cap package unit joined onto a periphery of the silicon package unit, and constructing a housing portion in which the electronic component is housed to be hermetically sealed.

Abstract: A spherical body sorter for sorting spherical bodies having a predetermined diameter dimension is made by opening multiple concave parts in the side of one surface of a plate-shaped body made of single-crystal silicon. Each of the concave parts formed in the spherical body sorter is formed in the same shape and dimension.

Abstract: The present invention includes the steps of forming a first resin film uncured on a wiring substrate including a wiring pattern, burying an electronic parts having a connection terminal on an element formation surface in the first resin film uncured in a state where the connection terminal is directed upward, forming a second resin film for covering the electronic parts, obtaining an insulation film by curing the first and second resin films by heat treatment, forming a via hole in a predetermined portion of the insulation film on the wiring pattern and the connection terminal, and forming an upper wiring pattern connected to the wiring pattern and the connection terminal through the via hole, on the insulation film.

Abstract: A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.

Abstract: A heat radiation package of the present invention includes a substrate in an upper surface side of which recess portion is provided, embedded wiring portion which is filled in the recess portion of the substrate and on which semiconductor element which generates a heat is mounted, and a heat sink connected to a lower surface side of the substrate. The substrate is made of silicon, ceramics, or insulating resin.

Abstract: A semiconductor device made by mounting a light emitting element on a substrate, where an optically-transparent cover with a flat plate shape is installed on the light emitting element and a groove part for suppressing reflection of light emission of the light emitting element is formed in the cover.

Abstract: After plural semiconductor elements are stacked to form a stacked body P, side wirings are formed on the side surface of the stacked body P, thereby manufacturing a semiconductor apparatus in which the respective semiconductor elements are electrically connected to one another. In this case, as the semiconductor element, a semiconductor element 10 is employed in which a gold wire 16 with its one end connected to an electrode terminal of the semiconductor element is extended out to the side surface. A conductive paste 36 containing conductive particles applied over a predetermined length of a transferring wire 30 is transferred to the side surface of the stacked body P so that the gold wires 16 extended out to the side surfaces of the semiconductor elements 10, 10, 10 are connected, thereby forming the side wirings.

Abstract: A plurality of quadrilateral-shaped semiconductor elements are stacked on the one surface of a circuit substrate. A side surface wiring for making electrical connection between each of the electrode terminals of the semiconductor elements and a pad formed on the circuit substrate is formed by applying a conductive paste containing conductive particles. A metal wire whose one end is connected to the electrode terminal is extended along a tapered surface formed by cutting off an edge of the electrode terminal surface on which the electrode terminal is formed among edges formed along each of the sides of the semiconductor element. At least a part of the metal wire extended from each of the electrode terminals of the semiconductor elements to the tapered surface is electrically connected to the side surface wiring.

Abstract: In a semiconductor apparatus in which plural semiconductor elements are stacked, metal wires whose one ends are connected to electrode terminals of the semiconductor elements are extended to the side surfaces of the semiconductor elements in an abutment state and the metal wires extended to the side surfaces of the semiconductor elements are bonded to a side surface wiring formed on side surfaces of the semiconductor elements by a conductive paste containing conductive particles.

Abstract: There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire.

Abstract: The optical device 10 includes a light source 13, a mirror element 12 including a mirror 36 for reflecting light emitted from the light source 13 in a predetermined direction, and a mirror element housing body 11 that accommodates the mirror element 12 as well as seals a space D where the mirror element 12 is accommodated, characterized in that the light source 13 is provided inside the mirror element housing body 11.

Abstract: There is provided a wiring substrate. The wiring substrate includes: a semiconductor substrate having a through hole; an insulating film provided to cover an upper surface, a lower surface and a first surface of the semiconductor substrate, the first surface corresponding to a side surface of the through hole; a through electrode provided in the through hole; a first wiring pattern disposed on an upper surface side of the semiconductor substrate and coupled to the through electrode; and a second wiring pattern disposed on a lower surface side of the semiconductor substrate and coupled to the through electrode. A first air gap is provided between the first wiring pattern and the insulating film formed on the upper surface, and a second air gap is provided between the second wiring pattern and the insulating film formed on the lower surface.

Abstract: An electronic component package, includes a package substrate portion constructed by a silicon substrate in which a through hole is provided, an insulating layer formed on both surface sides of the silicon substrate and an inner surface of the through hole, and a through electrode filled in the through hole, and a frame portion provided upright on a peripheral portion of the package substrate portion to constitute a cavity on the silicon substrate, wherein an upper surface of the through electrode in the cavity is planarized such that a height of the through electrode is set equal to a height of the insulating layer. The frame portion is joined to the package substrate portion by the low-temperature joining utilizing the plasma process after the through electrode is planarized.

Abstract: Amounts of a solder are controlled to supply onto the respective connection terminals with different opening diameters such that a difference between contents of a substance diffused from the connection terminals into the solder, which is present in the solder after reflow on the connection terminals with the different opening diameters becomes equal to or smaller than 0.2 wt %.

Abstract: A substrate includes a storage portion which is defined by a base for mounting a light emitting element and a wall portion standing up on and from the base. A package is structured such that the upper end of the wall portion so formed as to surround the periphery of the storage portion is connected to a cover to thereby seal a light emitting element. A seal structure is composed of an uneven portion formed on the lower surface side surface of the base, a close contact layer formed on the surface of the uneven portion, a power supply layer formed on the close contact layer, and an electrode layer formed on the surface of the power supply layer. The uneven portion includes a first recessed portion formed at a position spaced in the radial direction from the outer periphery of a through electrode or from the inner wall of a through hole, and a second recessed portion formed at a position spaced further outwardly from the first recessed portion.

Abstract: An electronic component embedded substrate and a method for manufacturing the substrate are disclosed. The electronic component embedded substrate includes a substrate main body and an electronic component embedded in the substrate main body. The center plane of the electronic component in the thickness direction thereof and the center plane of the substrate main body in the thickness direction thereof generally match each other.

Abstract: An electronic component has a substrate made of silicon in which a flow path for circulating a refrigerant is formed, a conductive pattern formed on a first principal surface of the substrate, a via plug penetrating the substrate and also connected to the conductive pattern, and an elastically deformable external connection terminal installed on a second principal surface of the substrate.

Abstract: A light emitting device housing having a concave part is provided therein for housing a light emitting device. Side surfaces of the concave part are each configured to be a perpendicular surface that is substantially perpendicular to a bottom surface of the concave part, and other side surfaces are each configured to be an inclined surface for reflecting light from the light emitting device toward above the light emitting device.