Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET includes a fin, a control gate and a selective metal gate. The fin is on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin includes a memory region and a logic region. The control gate is disposed over the fin of the memory region and covers the two sidewalls and the top surface of the fin, wherein the control gate includes a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode. The selective metal gate is disposed over the fin adjacent to the control gate and covers the two sidewalls and the top surface of the fin. The present invention also provides a method of forming said silicon-oxide-nitride-oxide-silicon (SONOS) memory cell.

Abstract: A method of generating an IC layout diagram includes receiving a first gate resistance value of a gate region in an IC layout diagram, the first gate resistance value corresponding to a location of a gate via positioned within an active region and along a width of the gate region extending across the active region, determining a second gate resistance value based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.

Abstract: Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET includes a fin, a control gate and a selective metal gate. The fin is on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin includes a memory region and a logic region. The control gate is disposed over the fin of the memory region and covers the two sidewalls and the top surface of the fin, wherein the control gate includes a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode. The selective metal gate is disposed over the fin adjacent to the control gate and covers the two sidewalls and the top surface of the fin. The present invention also provides a method of forming said silicon-oxide-nitride-oxide-silicon (SONOS) memory cell.

Abstract: A shower head assembly of an atomic layer deposition device has a first trapezoidal column component, a second trapezoidal column component and a column component, wherein a first bottom edge of the first trapezoidal column component is connected to a second top edge of the second trapezoidal column component, and a second bottom edge of the second trapezoidal column component is connected to a top edge of the column component. The first trapezoidal column component has a first bottom dimension distance, the second trapezoidal column component has a second vertical distance, and the column component has a column vertical distance, wherein a ratio of the column vertical distance to the second vertical distance is greater than or equal to 1.2, and a total distance of the second vertical distance and the column vertical distance is less than the first bottom dimension distance.

Abstract: A stem includes a stem body, a column and a locking device. The stem body is provided with a perforation. The column is disposed at one end of the stem body and provided with a first aperture, the perforation is in communication with the first aperture. The locking device is disposed in the perforation and includes a clamping part, two sliding blocks and a first fixing member, the clamping part is located between the sliding blocks, and the first fixing member penetrates the clamping part and the sliding blocks. When the first fixing member moves toward the inside of the perforation, the first fixing member drives the sliding blocks to approach each other and squeeze the clamping part, such that the clamping part moves in a direction toward the first aperture. According to this, the assembly and disassembly procedures of the present invention are quite simple and easy to operate.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.

Abstract: A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region, and an electrically conductive contact layer over the source/drain region. The source/drain region includes a first epitaxial layer having a first material composition and a second epitaxial layer formed over the first epitaxial layer. The second epitaxial layer has a second material composition different from the first composition. The electrically conductive contact layer is in contact with the first and second epitaxial layers. A bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layer.

Abstract: Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.

Abstract: A method of generating a netlist of an IC device includes receiving gate region information of the IC device. The gate region information includes a width of the gate region, the width extending at least from a first edge of an active region to a second edge of the active region, a location of a gate via positioned within the active region and along the width, and a first gate resistance value corresponding to the gate region. The method includes determining a second gate resistance value based on the location and the width, and modifying the netlist based on the second gate resistance value.

Abstract: The present disclosure is a thin-film deposition equipment including a chamber, a stage, at least one baffle and at least one shielding component. The stage is for carrying a substrate, the baffle prevents the substrate on the stage from backside coating. The shielding component is positioned higher the baffle for shielding the baffle, to receive target atoms which is yet deposited on the substrate for the baffle. Such that to avoid the target atoms deposited on the baffle forming a thin film, and to further prevent a problem of the thin film from being heated then flowing from the baffle to a contact area between the baffle and the substrate.

Abstract: A touch panel is provided in the present disclosure, including: a substrate, a conductive trace structure, and a light-shielding structure. The substrate includes a visible area and a peripheral area, and the visible area is surrounded by the peripheral area. A conductive trace structure is disposed on the visible area. The light-shielding structure includes a first material layer and a second material layer, in which the optical density of the light-shielding structure is lower than 4, the first material layer is disposed on the peripheral area, and the second material layer is disposed on the first material layer. A method of manufacturing a touch panel is provided in some embodiments of the present disclosure for the effects of saving cost and improving wire drift.

Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.

Abstract: A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region, and an electrically conductive contact layer over the source/drain region. The source/drain region includes a first epitaxial layer having a first material composition and a second epitaxial layer formed over the first epitaxial layer. The second epitaxial layer has a second material composition different from the first composition. The electrically conductive contact layer is in contact with the first and second epitaxial layers. A bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layer.

Abstract: The present invention discloses a method for monitoring an exercise. The method comprises: building up an energy metabolism system having an energy metabolism feature, wherein the energy metabolism feature comprises a first feature factor, wherein the first feature factor is associated with a first biological system being one of a plurality of biological systems of a human body and not associated with the complete human body; building up a mathematical model describing that an energy expenditure depends on at least one exercise-associated parameter based on the energy metabolism feature for the energy metabolism system; estimating the energy expenditure based on the at least one exercise-associated parameter measured in the exercise by the mathematical model of the energy metabolism system; and monitoring the exercise based on the energy expenditure.

Abstract: An atomic layer deposition apparatus for coating on fine powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The shaft sealing device includes an outer tube and an inner tube arranged in an accommodating space of the outer tube. The driving unit drives the vacuum chamber to rotate through the outer tube to agitate the fine powders in a reaction space of the vacuum chamber. An air extraction line and an air intake line are arranged in a connection space of the inner tube. The air extraction line is used to extract gas from the reaction space. The air intake line is used to transport non-reactive gas to the reaction space to blow the fine powders around in the reaction space and precursor gas to the reaction space to form thin films with uniform thickness on the surface of the fine powders.

Abstract: A detection device includes a frame, a transport mechanism, detection mechanisms, and a grasping mechanism. The transport mechanism includes a feeding line, a first flow line, and a second flow line arranged in parallel on the frame. The detection mechanisms are arranged on the frame and located on two sides of the transport mechanism. The grasping mechanism is arranged on the frame and used to transport workpieces on the feeding line to the detection mechanisms, transport qualified workpieces to the first flow line, and transport unqualified workpieces to the second flow line.

Abstract: The present disclosure relates to hub apparatuses and associated systems. An embodiment of the hub apparatus includes a rotor assembly, a shaft, and a stator assembly. The rotor assembly includes first/second housing components and multiple magnets mounted on one or both of the first and second housing components. The stator assembly includes (1) a coil assembly positioned corresponding to the magnets; (2) a main circuit board fixedly coupled to the coil assembly; and (3) a battery assembly positioned inside the coil assembly and carried by the main circuit board.

Abstract: A game machine with a controllable an opening angle is characterized in that: including: a main body, having two lateral plates, an accommodation space and a mounting rod, wherein a front end of the accommodation space has a front opening; a movable gate, disposed at the front opening, wherein a rear end of the movable gate has a pivotal part pivoted to top end of the main body; and a movable mounting rack, having one end thereof disposed at a rear end of the movable gate and having two lateral mounting plates and at least one connection rod between the two lateral mounting plates, the lateral mounting plates are disposed at two sides of the movable mounting rack, the lateral mounting plates correspondingly have at least two mounting slots allowing the mounting rod to be mounted; a retractable rod is disposed between the moveable gate and the main body.