Abstract: A multi-phase power controller coupled to resonant power converting circuits providing an output voltage is disclosed. The multi-phase power controller includes a current sensing unit, a frequency adjusting circuit and a duty cycle adjusting circuit. The current sensing unit, coupled to a first resonant power converting circuit, provides a first sensing current. The frequency adjusting circuit includes an error amplifier and a first ramp signal generation circuit. The error amplifier provides an error signal according to the output voltage and a reference voltage. The first ramp signal generation circuit provides a first ramp signal according to the error signal. The duty cycle adjusting circuit provides a first PWM signal to the first resonant power converting circuit according to a default voltage and the first ramp signal. The change of the duty cycle of the first PWM signal is related to the first sensing current, the default voltage and the first ramp signal.

Abstract: A nonvolatile memory cell includes a substrate having a drain region, a source region, and a channel region between the drain region and the source region. A floating gate and a select gate are disposed on the channel region. A control gate is disposed on the floating gate. An erase gate is disposed on the source region. The erase gate includes a lower end portion that extends into a major surface of the substrate.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a plurality of fins on a semiconductor substrate, and forming source/drain regions on the fins. The source/drain regions have an uneven surface with a mean surface roughness, Ra, of about 10 nm to about 50 nm. A smoothing layer is formed on the source/drain regions filling the uneven surface. An etch stop layer is formed overlying the smoothing layer. A portion of the etch stop layer is removed to expose a portion of the smoothing layer. The exposed smoothing layer is removed, and a contact layer is formed on the source/drain regions.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, at least a first cell, and at least a second cell. The substrate has a first region and a second region. The first and second cells are in the first and second regions respectively. The first cell comprises a first dielectric layer, a floating gate electrode, an oxide-nitride-oxide (ONO) gate dielectric layer, a second dielectric layer, and a control gate electrode. The ONO gate dielectric layer is on the floating gate electrode in the first dielectric layer on the substrate. The control gate electrode is in both of the first dielectric layer and the second dielectric layer on the first dielectric layer. The ONO gate dielectric layer contacting with the control gate electrode is wholly below a top surface of the first dielectric layer.

Abstract: A multi-phase power controller coupled to resonant power converting circuits providing an output voltage is disclosed. The multi-phase power controller includes a current sensing unit, a frequency adjusting circuit and a duty cycle adjusting circuit. The current sensing unit, coupled to a first resonant power converting circuit, provides a first sensing current. The frequency adjusting circuit includes an error amplifier and a first ramp signal generation circuit. The error amplifier provides an error signal according to the output voltage and a reference voltage. The first ramp signal generation circuit provides a first ramp signal according to the error signal. The duty cycle adjusting circuit provides a first PWM signal to the first resonant power converting circuit according to a default voltage and the first ramp signal. The change of the duty cycle of the first PWM signal is related to the first sensing current, the default voltage and the first ramp signal.

Abstract: Disclosed is a test tape device comprising a housing having a cassette compartment for a replaceable tape cassette, a cassette door which can be retained in a closed position and which allows access to the cassette compartment through a housing opening in an open position, a tip cover which can be positioned in a first position covering a housing aperture and a second position allowing access to a tip of the tape cassette, wherein the tip cover is moveable to a third position in which the cassette tip is at least partially uncovered and the housing opening is extended into the area of the cassette tip, and wherein the cassette door is self-opening when moving the tip cover to the third position.

Abstract: A method of fabricating a packaging substrate is provided, including: providing a carrier having two carrying portions, each of the carrying portions having a first side and a second side opposite to the first side and the carrying portions are bonded through the second sides thereof; forming a circuit layer on the first side of each of the carrying portions; and separating the two carrying portions from each other to form two packaging substrates. The carrying portions facilitate the thinning of the circuit layers and provide sufficient strength for the packaging substrates to undergo subsequent packaging processes. The carrying portions can be removed after the packaging processes to reduce the thickness of packages and thereby meet the miniaturization requirement.

Abstract: A semiconductor device is provided, including a lower conducting layer formed above a substrate, an upper conducting layer, and a memory cell structure formed on the lower conducting layer (such as formed between the lower and upper conducting layers). The memory cell structure includes a bottom electrode formed on the lower conducting layer and electrically connected to the lower conducting layer, a transitional metal oxide (TMO) layer formed on the bottom electrode, a TMO sidewall oxides formed at sidewalls of the TMO layer, a top electrode formed on the TMO layer, and spacers formed on the bottom electrode. The upper conducting layer is formed on the top electrode and electrically connected to the top electrode.

Abstract: A method of forming a Resistive Random Access Memory (RRAM) includes the following steps. A first dielectric layer is formed on a first electrode layer. A second dielectric layer having a first trench is formed on the first dielectric layer. Spacers are formed beside sidewalls of the first trench. Apart of the first dielectric layer exposed by the spacers is removed, thereby forming a second trench in the first dielectric layer. A resistance switching material fills in the second trench. The second dielectric layer and the spacers are removed. A second electrode layer is formed on the resistance switching material and the first dielectric layer. The present invention also provides a RRAM formed by said method.

Abstract: An article for mounting to a vertical surface comprising a substrate having a first layer formed from a flexible film or sheet and a second layer formed with a conventional low-tack non-reactive reusable adhesive effective for attaching the substrate to drywall or plaster or wood surfaces. At least one rigid component is attached to the substrate. The second layer covers at least a portion of the first layer for attaching to a vertical surface and includes a release area, wherein the release area is positioned such that it is vertically above the at least one rigid component. The rigid component operates to produce a cantilever moment and wherein the release area operates to counteract the cantilever moment.

Abstract: A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region, and an electrically conductive contact layer over the source/drain region. The source/drain region includes a first epitaxial layer having a first material composition and a second epitaxial layer formed over the first epitaxial layer. The second epitaxial layer has a second material composition different from the first composition. The electrically conductive contact layer is in contact with the first and second epitaxial layers. A bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, a non-volatile memory cell, and a gate stack. The non-volatile memory cell is formed in the semiconductor substrate, and a top surface of the non-volatile memory cell is coplanar with or below a top surface of the semiconductor substrate. The gate stack is formed on the semiconductor substrate.

Abstract: A synchronous motor assembly includes a motor connected between two nodes of an AC power source, a motor drive circuit, and a regulation unit. The drive circuit drives the motor to rotate. The regulation unit regulates a rotation speed of the motor via regulating the motor to different steady voltage points.

Abstract: A semiconductor device is provided, including a lower conducting layer formed above a substrate, an upper conducting layer, and a memory cell structure formed on the lower conducting layer (such as formed between the lower and upper conducting layers). The memory cell structure includes a bottom electrode formed on the lower conducting layer and electrically connected to the lower conducting layer, a transitional metal oxide (TMO) layer formed on the bottom electrode, a TMO sidewall oxides formed at sidewalls of the TMO layer, a top electrode formed on the TMO layer, and spacers formed on the bottom electrode. The upper conducting layer is formed on the top electrode and electrically connected to the top electrode.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, at least a first cell, and at least a second cell. The substrate has a first region and a second region. The first and second cells are in the first and second regions respectively. The first cell comprises a first dielectric layer, a floating gate electrode, an oxide-nitride-oxide (ONO) gate dielectric layer, a second dielectric layer, and a control gate electrode. The ONO gate dielectric layer is on the floating gate electrode in the first dielectric layer on the substrate. The control gate electrode is in both of the first dielectric layer and the second dielectric layer on the first dielectric layer. The ONO gate dielectric layer contacting with the control gate electrode is wholly below a top surface of the first dielectric layer.

Abstract: Disclosed herein is novel double-stranded short interfering ribonucleic acid (siRNA) capable of suppressing the translation of Aurora-A mRNA. Also disclosed are use of the novel siRNA as disclosed herein for manufacturing a medicament suitable for treating a cancer, which is mediated through epidermal growth factor receptor (EGFR) signaling. Accordingly, a pharmaceutical composition comprising the disclosed novel siRNA molecules is provided; as well as a method of treating a subject suffering from EGFR-mediated cancer via administering to the subject the disclosed novel siRNA molecule.

Abstract: A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel portion of a finFET, a first Ge structure having a rounded surface epitaxially grown on the SiGe structure, and a capping layer formed over the rounded surface of the Ge structure. The capping layer may be formed of Si. Such S/D structures provide both a larger physical size for lower contact resistance, and greater volume and concentration of Ge for higher compressive strain applied to the channel portion of the finFET.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a bottom metal layer, a resistive random access memory (ReRAM) cell structure, and an upper metal layer. The bottom metal layer is located above the substrate. The ReRAM cell structure is formed on the bottom metal layer. The ReRAM cell structure includes a bottom electrode, a memory cell layer, a top electrode, and a spacer. The memory cell layer is formed on the bottom electrode. The top electrode is formed on the memory cell layer. The spacer is formed on two sides of the bottom electrode, the memory cell layer and the top electrode. The upper metal layer is electrically connected to and directly contacting the top electrode.

Abstract: A semiconductor device includes an interconnection formed above a substrate, and the interconnection comprising interconnect layers respectively buried in dielectric layers; a lower conducting layer formed above the substrate; a memory cell structure formed on the lower conducting layer and buried in one of the dielectric layers; an upper conducting layer formed on the memory cell structure. The memory cell structure includes a bottom electrode formed on and electrically connected to the lower conducting layer; a transitional metal oxide (TMO) layer formed on the bottom electrode; and a top electrode formed on the TMO layer, wherein the upper conducting layer is formed on the top electrode and electrically connected to the top electrode. Also, the lower conducting layer and the upper conducting layer are positioned in the different dielectric layers.