Abstract: A fingerprint identification apparatus, including a light path adjustment element, an optical filter layer, and an image sensor, is provided. The light path adjustment element is disposed on a transmission path of an image beam from a fingerprint of a user. The optical filter layer is disposed on a transmission path of the image beam from the light path adjustment element. The optical filter layer has openings. An inclined image beam in the image beam is obliquely incident to the light path adjustment element. The light path adjustment element adjusts a light path of the inclined image beam to be transmitted to the openings along a normal direction. The image sensor is disposed on a transmission path of the image beam from the optical filter layer. The image sensor has pixels. Positions of the pixels respectively correspond to positions of the openings.

Abstract: A method for fabricating an integrated circuit is disclosed. The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. The method further comprises implanting a dopant into the top and sidewalls of the semiconductor ridge.

Abstract: A computing device obtains a video, generates a user interface displaying a plurality of facial effects, and obtains selection of one or more facial effects displayed in the user interface. A target facial image is obtained, where the target facial image comprises a target face to be edited. The computing device determines a target facial feature vector from the target facial image to be edited. For each of a plurality of frames in the video, the computing device identifies facial regions of individuals depicted in the video, generates candidate facial feature vectors for each of the identified facial regions, compares each of the candidate facial feature vectors to the target facial feature vector, and applies one or more facial effects to facial regions based on the comparison to generate an edited video.

Abstract: A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.

Abstract: A fin field effect transistor (FinFET) includes a drain region, a merged drift region, and a plurality of fins. The drain region extends above a surface of a semiconductor substrate and has a first dopant concentration of first conductivity type. The merged drift region extends above the substrate surface and touches the drain region, and has a second lower dopant concentration of the first conductivity type. The plurality of fins extend above the substrate surface and each fin is directly connected to the merged drift region. Each fin is connected to a source region having the first conductivity type at a distal end of that fin from the merged drift region.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.

Abstract: A liquid crystal device comprises a first polymer substrate, a first buffer layer, thin film transistors, a liquid crystal layer and a second polymer substrate. The first buffer layer is disposed on the first polymer substrate. The thin film transistors are disposed on the first buffer layer. The liquid crystal layer is disposed on the thin film transistors. The second polymer substrate is disposed on the liquid crystal layer.

Abstract: A composition of plant ingredients, a herbal composition for inhibiting coronavirus and cytokine storm, and a preparation method of the herbal composition are introduced. The composition of plant ingredients has Heartleaf Houttuynia, Indigowoad Root, Fineleaf Nepeta, Saposhnikovia Root, Mulberry Leaf, Scutellaria Root, Mongolian Snakegourd Fruit, Magnolia Bark, Peppermint Herb and Baked Liquorice Root. The herbal composition has 1 to 20 parts by weight of Heartleaf Houttuynia, Indigowoad Root, Fineleaf Nepeta, Saposhnikovia Root, Mulberry Leaf, Scutellaria Root, Mongolian Snakegourd Fruit, Magnolia Bark, Peppermint Herb and Baked Liquorice Root.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: The invention provides a paper cup-holder comprising first and second wall plates respectively bent relative to the bottom plate; a support plate bent relative to the first wall plate and being parallel to the bottom plate; a panel bent relative to the second wall plate and fixed on the support plate. The panel is formed with two sets of handle forming lines and at least two cup receiving inlet forming lines. Each set of handle forming lines comprises an outer cutting line and an inner cutting line, and a starting point and an ending point of the cup receiving inlet forming lines are located on the inner cutting line. Two hollowed areas are formed when the two handles are formed from the panel, and respectively form a cup receiving inlet together with at least one of the cup receiving inlet forming lines.

Abstract: A method of fabricating an integrated circuit includes forming and patterning a hardmask over a substrate such that the patterned hardmask exposes regions of the substrate. The exposed regions are etched, thereby forming trenches and a semiconductor fin between the trenches. Prior to removing the hardmask, a photoresist layer is formed and patterned, thereby exposing a section of the semiconductor fin. A dopant is implanted into the exposed section through the hardmask.

Abstract: A method for fabricating an integrated circuit is disclosed. The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. The method further comprises implanting a dopant into the top and sidewalls of the semiconductor ridge.

Abstract: A driving device and a driving method for a backlight module are provided. The driving device includes a current-to-voltage converter, a first LED driver, a second LED driver, and a switch. The current-to-voltage converter generates a control voltage corresponding to a control current of a first driving channel of the first LED driver. A control terminal of the switch is coupled to the current-to-voltage converter to receive the control voltage. A first terminal of the switch is configured to be coupled to a voltage source. A second terminal of the switch is configured to be coupled to a first terminal of a first light-emitting element of a backlight module. A second driving channel of the second LED driver is configured to be coupled to a second terminal of the first light-emitting element of the backlight module.

Abstract: An integrated circuit (IC) having a fin field effect transistor (FinFET) includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, a drift region, and field plating oxide layer. The drift region is adjacent the drain region. The field plating oxide layer is on a first side, a second side, and a third side of the drift region.

Abstract: A semiconductor device includes an extended drain finFET. The drain drift region of the finFET extends between a drain contact region and a body of the finFET. The drain drift region includes an enhanced portion of the drain drift region between the drain contact region and the body. The drain drift region also includes a first charge balance region and a second charge balance region laterally adjacent to, and on opposite sides of, the enhanced portion of the drain drift region. The enhanced portion of the drain drift region and the drain contact region have a first conductivity type; the body, the first charge balance region, and the second charge balance region have a second, opposite, conductivity type. The drain drift region is wider than the body.

Abstract: An integrated circuit (IC) includes a field-plated transistor including a substrate having a semiconductor surface layer, at least one body region in the semiconductor surface layer, and at least a first trench isolation region adjacent to the body region having at least a first tapered sidewall that has an average angle along its full length of 15 to 70 degrees. A gate is over the body region. A field plate is over the first tapered trench isolation region. A source is on one side of the field plate and a drain is on an opposite side of the field plate. The IC also includes circuitry for realizing at least one circuit function having a plurality of transistors which are configured together with the field-plated transistor that utilize second trench isolation regions for isolation that have an average angle of 75 and 90 degrees.

Abstract: A composition of plant ingredients, a herbal composition for inhibiting coronavirus and cytokine storm, and a preparation method of the herbal composition are introduced. The composition of plant ingredients has Heartleaf Houttuynia, Indigowoad Root, Fineleaf Nepeta, Saposhnikovia Root, Mulberry Leaf, Scutellaria Root, Mongolian Snakegourd Fruit, Magnolia Bark, Peppermint Herb and Baked Liquorice Root. The herbal composition has 1 to 20 parts by weight of Heartleaf Houttuynia, Indigowoad Root, Fineleaf Nepeta, Saposhnikovia Root, Mulberry Leaf, Scutellaria Root, Mongolian Snakegourd Fruit, Magnolia Bark, Peppermint Herb and Baked Liquorice Root.

Abstract: A fingerprint identification apparatus, including a light path adjustment element, an optical filter layer, and an image sensor, is provided. The light path adjustment element is disposed on a transmission path of an image beam from a fingerprint of a user. The optical filter layer is disposed on a transmission path of the image beam from the light path adjustment element. The optical filter layer has openings. An inclined image beam in the image beam is obliquely incident to the light path adjustment element. The light path adjustment element adjusts a light path of the inclined image beam to be transmitted to the openings along a normal direction. The image sensor is disposed on a transmission path of the image beam from the optical filter layer. The image sensor has pixels. Positions of the pixels respectively correspond to positions of the openings.

Abstract: A semiconductor device includes an extended drain finFET. The drain drift region of the finFET extends between a drain contact region and a body of the finFET. The drain drift region includes an enhanced portion of the drain drift region between the drain contact region and the body. The drain drift region also includes a first charge balance region and a second charge balance region laterally adjacent to, and on opposite sides of, the enhanced portion of the drain drift region. The enhanced portion of the drain drift region and the drain contact region have a first conductivity type; the body, the first charge balance region, and the second charge balance region have a second, opposite, conductivity type. The drain drift region is wider than the body.

Abstract: Disclosed herein is an anti-DENV antibody, a pharmaceutical composition comprising the same, and uses thereof. According to embodiments of the present disclosure, the anti-DENV antibody comprises a heavy chain variable region and a light chain variable region, in which the heavy chain variable region comprises amino acid sequences of SEQ ID NOs: 1-3, and the light chain variable region comprises amino acid sequences of SEQ ID NOs: 5-7.