Abstract: A pillar-shaped semiconductor memory device includes an i-layer substrate, a silicon pillar, a tunnel insulating layer, a data charge storage insulating layer, a first interlayer insulating layer, a second interlayer insulating layer, and word-line conductor layers separated by third interlayer insulating layers. The tunnel insulating layer, the data charge storage insulating layer, the first interlayer insulating layer, and the second interlayer insulating layer are formed so as to surround an outer peripheral portion of a side surface of the silicon pillar. The word-line conductor layers and the third interlayer insulating layers are formed so as to surround an outer peripheral portion of a side surface of the second interlayer insulating layer in a direction perpendicular to a surface of the i-layer substrate.

Abstract: A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.

Abstract: A method for producing an SGT-including semiconductor device includes forming a gate insulating layer on an outer periphery of a Si pillar, forming a gate conductor layer on the gate insulating layer, and forming an oxide layer on the gate conductor layer. Then a hydrogen fluoride ion diffusion layer containing moisture is formed so as to make contact with the oxide layer and lie at an intermediate position of the Si pillar. A part of the oxide film in contact with the hydrogen fluoride ion diffusion layer is etched with hydrogen fluoride ions generated from hydrogen fluoride gas supplied to the hydrogen fluoride ion diffusion layer and an opening is thereby formed on the outer periphery of the Si pillar.

Abstract: A pillar-shaped semiconductor memory device includes Si pillars arranged in at least two rows; a tunnel insulating layer; a data charge storage insulating layer; first, second, and third interlayer insulating layers; and first and second conductor layers, all of which surround outer peripheries of the Si pillars, the first and second conductor layers being located at the same height in a perpendicular direction. A row of the semiconductor pillars is interposed between the first and second conductor layers of Si pillars arranged in an X direction. Shapes of the first and second conductor layers facing the semiconductor pillars are circular arcs. Adjacent circular arcs of the first conductor layer are in contact with each other, and adjacent circular arcs of the second conductor layer are in contact with each other. A pitch length of the Si pillars in the X direction is smaller than that in a Y direction.

Abstract: A pillar-shaped semiconductor memory device includes an i-layer substrate, a silicon pillar, a tunnel insulating layer, a data charge storage insulating layer, a first interlayer insulating layer, a second interlayer insulating layer, and word-line conductor layers separated by third interlayer insulating layers. The tunnel insulating layer, the data charge storage insulating layer, the first interlayer insulating layer, and the second interlayer insulating layer are formed so as to surround an outer peripheral portion of a side surface of the silicon pillar. The word-line conductor layers and the third interlayer insulating layers are formed so as to surround an outer peripheral portion of a side surface of the second interlayer insulating layer in a direction perpendicular to a surface of the i-layer substrate.

Abstract: A pillar-shaped semiconductor memory device includes a silicon pillar, and a tunnel insulating layer, a data charge storage insulating layer, a first interlayer insulating layer, and a first conductor layer, which surround an outer periphery of the silicon pillar in that order, and a second interlayer insulating layer that is in contact with an upper surface or a lower surface of the first conductor layer. A side surface of the second interlayer insulating layer facing a side surface of the first interlayer insulating layer is separated from the side surface of the first interlayer insulating layer with a distance therebetween, the distance being larger than a distance from the side surface of the first interlayer insulating layer to a side surface of the first conductor layer facing the side surface of the first interlayer insulating layer.

Abstract: A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.

Abstract: A semiconductor device includes a P+ region and an N+ region functioning as sources of SGTs and disposed in top portions of Si pillars formed on an i-layer substrate. Connections between a power supply wiring metal layer and the P+ region and between a ground wiring metal layer and the N+ region are established on the entire surfaces of low-resistance Ni silicide layers that are respectively in contact with the P+ region and the N+ region and formed on outer peripheries of the Si pillars. Lower ends of the power supply wiring metal layer and the ground wiring metal layer are located at a height of surfaces of HfO layers near the boundaries between the P+ region and a channel and between the N+ region and a channel, respectively.

Abstract: A pillar-shaped semiconductor memory device includes an i-layer substrate and silicon pillars formed on the i-layer substrate. Tunnel insulating layers, a data charge storage insulating layer, an interlayer insulating layer, and gas layers are formed so as to surround outer peripheries of the silicon pillars. Word lines that are separated from each other by interlayer insulating layers are formed so as to surround outer peripheries of the gas layers in a direction perpendicular to an upper surface of the i-layer substrate.

Abstract: A SiO2 layer is formed at a middle of a Si pillar. An opening is formed in a gate insulating layer and a gate conductor layer in a peripheral portion that includes a side surface of the SiO2 layer. Two stacks of layers, each stack being constituted by a Ni layer, a poly-Si layer containing a donor or acceptor impurity atom, and a SiO2 layer, are formed in a peripheral portion of the opening, and heat treatment is performed to silicidate the poly-Si layers into NiSi layers. The NiSi layers protrude and come into contact with the side surface of the Si pillar by silicidation, and a donor or acceptor impurity atom diffuses from the NiSi layers into the Si pillar. Thus an N+ region and a P+ region serving as a source and a drain of surrounding gate MOS transistors are respectively formed above and under the SiO2 layer.

Abstract: A semiconductor device includes a P+ region and an N+ region functioning as sources of SGTs and disposed in top portions of Si pillars formed on an i-layer substrate. Connections between a power supply wiring metal layer and the 1+ region and between a ground wiring metal layer and the N+ region are established on the entire surfaces of low-resistance Ni silicide layers that are respectively in contact with the P+ region and the N+ region and formed on outer peripheries of the Si pillars. Lower ends of the power supply wiring metal layer and the ground wiring metal layer are located at a height of surfaces of HfO layers near the boundaries between the P+ region and a channel and between the N+ region and a channel, respectively.

Abstract: An opening extending through a gate insulating layer and a gate conductor layer is formed in the circumferential portion of a Si pillar at an intermediate height of the Si pillar. A laminated structure including two sets each including a Ni film, a poly-Si layer containing donor or acceptor impurity atoms, and a SiO2 layer is formed so as to surround the opening. A heat treatment is carried out to form silicide from the poly-Si layers and this silicide formation causes the resultant NiSi layers to protrude and come into contact with the side surface of the Si pillar. The donor or acceptor impurity atoms diffuse from the NiSi layers into the Si pillar to thereby form an N+ region and a P+ region serving as a source or a drain of SGTs.

Abstract: A semiconductor device includes a P+ region and an N+ region functioning as sources of SGTs and disposed in top portions of Si pillars formed on an i-layer substrate. Connections between a power supply wiring metal layer and the P+ region and between a ground wiring metal layer and the N+ region are established on the entire surfaces of low-resistance Ni silicide layers that are respectively in contact with the P+ region and the N+ region and formed on outer peripheries of the Si pillars. Lower ends of the power supply wiring metal layer and the ground wiring metal layer are located at a height of surfaces of HfO layers near the boundaries between the P+ region and a channel and between the N+ region and a channel, respectively.

Abstract: An N+ region 2a and a P+ region 3a are formed in a Si pillar 6. HfO2 layers 9a and 9c, TiN layers 10b and 10d, and SiO2 layers 11b and 11d are formed to surround the Si pillar 6. Then contact portions 21a and 21b are respectively formed in side surfaces of the N+ region 2a and the P+ region 3a and a side surface of the TiN layer 10d. Then Si and Ni atoms are injected in a direction perpendicular to an upper surface of an i-layer substrate 1 from above the Si pillar 6 to form a Si layer and a Ni layer. Subsequently, a heat treatment is performed to expand NiSi layers 18a and 22 in a horizontal direction by Ni-silicidation. As a result, the NiSi layers 18a and 22 connect to the N+ region 2a and the P+ region 3a or the TiN layer 10d.

Abstract: Isotropic etching is conducted by using SiN layers that are disposed on i-layers having an island structure on an i-layer substrate and have the same rectangular shape in a plan view as the i-layers. As a result, SiO2 layers each having a circular shape in a plan view are formed. Then the SiN layers are removed and the i-layers are etched by using the SiO2 layers as a mask to form Si pillars. Then surrounding gate MOS transistors are formed in the Si pillars.

Abstract: An N+ region 2a and a P+ region 3a are formed in a Si pillar 6. HfO2 layers 9a and 9c, TiN layers 10b and 10d, and SiO2 layers 11b and 11d are formed to surround the Si pillar 6. Then contact portions 21a and 21b are respectively formed in side surfaces of the N+ region 2a and the P+ region 3a and a side surface of the TiN layer 10d. Then Si and Ni atoms are injected in a direction perpendicular to an upper surface of an i-layer substrate 1 from above the Si pillar 6 to form a Si layer and a Ni layer. Subsequently, a heat treatment is performed to expand NiSi layers 18a and 22 in a horizontal direction by Ni-silicidation. As a result, the NiSi layers 18a and 22 connect to the N+ region 2a and the P+ region 3a or the TiN layer 10d.

Abstract: A method for producing an SGT-including semiconductor device includes forming a gate insulating layer on an outer periphery of a Si pillar, forming a gate conductor layer on the gate insulating layer, and forming an oxide layer on the gate conductor layer. Then a hydrogen fluoride ion diffusion layer containing moisture is formed so as to make contact with the oxide layer and lie at an intermediate position of the Si pillar. A part of the oxide film in contact with the hydrogen fluoride ion diffusion layer is etched with hydrogen fluoride ions generated from hydrogen fluoride gas supplied to the hydrogen fluoride ion diffusion layer and an opening is thereby formed on the outer periphery of the Si pillar.

Abstract: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a first n-type diffusion layer, a second n-type diffusion layer, a first p-type diffusion layer, and a second p-type diffusion layer. A center line extending along the first gate line is offset by a first predetermined amount from a line connecting a center of the first pillar-shaped semiconductor layer and a center of the second pillar-shaped semiconductor layer.

Abstract: A semiconductor device includes a P+ region and an N+ region functioning as sources of SGTs and disposed in top portions of Si pillars formed on an i-layer substrate. Connections between a power supply wiring metal layer and the P+ region and between a ground wiring metal layer and the N+ region are established on the entire surfaces of low-resistance Ni silicide layers that are respectively in contact with the P+ region and the N+ region and formed on outer peripheries of the Si pillars. Lower ends of the power supply wiring metal layer and the ground wiring metal layer are located at a height of surfaces of HfO layers near the boundaries between the P+ region and a channel and between the N+ region and a channel, respectively.

Abstract: A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.