Abstract: A FinFET having an asymmetric threshold voltage distribution is provided by forming a halo ion implantation region in a semiconductor fin, and in close proximity to a source region, of the FinFET. The halo ion implantation region is self-aligned to an outermost sidewall surface of the functional gate structure of the FinFET and it has a higher dopant concentration than the remaining portion of the channel region.

Abstract: An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.

Abstract: A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area.

Abstract: Embodiments of the invention are directed to a configuration of nanosheet FET devices in a first region of a substrate. Each of the nanosheet FET devices in the first region includes a first channel nanosheet, a second channel nanosheet over the first channel nanosheet, a first gate structure around the first channel nanosheet, and a second gate structure around the second channel nanosheet, wherein the first gate structure and the second gate structure pinch off in a pinch off area between the first gate structure and the second gate structure. The first gate structure includes a doped region, and the second gate structure includes a doped region. At least a portion of the pinch off area is undoped.

Abstract: A method for making a hydrophobic biosensing device includes forming alternating layers over a top and sides of a fin on a dielectric layer to form a stack of layers. The stack of layers are planarized to expose the top of the fin. The fin and every other layer are removed to form a cathode group of fins and an anode group of fins. A hydrophobic surface on the two groups of fins.

Abstract: A method of forming a source/drain contact is provided. The method includes forming a sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer. The method further includes heat treating the oxidation layer and the sacrificial layer to form a modified sacrificial layer. The method further includes forming a protective liner on the modified sacrificial layer, and depositing an interlayer dielectric layer on the protective liner. The method further includes forming a trench in the interlayer dielectric layer that exposes a portion of the protective liner.

Abstract: A semiconductor structure containing a resistive random access memory device integrated with a gate-all-around nanosheet CMOS device is provided. In one embodiment, the semiconductor structure includes a gate-all-around nanosheet CMOS device includes a functional gate structure present on, and between, each semiconductor channel material nanosheet of a nanosheet stack of suspended semiconductor channel material nanosheets. The structure of the present application further includes a resistive memory device located laterally adjacent to the gate-all-around nanosheet CMOS device that includes a second functional gate structure present on, and between, each recessed semiconductor channel material layer portion of a material stack, wherein a recessed sacrificial semiconductor material layer portion is located above and below each recessed semiconductor channel material layer portion. A shared source/drain region is located between the gate-all-around nanosheet CMOS device and the resistive memory device.

Abstract: A semiconductor structure includes an oxide ReRAM co-integrated with a drain region of a field effect transistor (FET). The oxide ReRAM has a tip region defined by a pointed cone that contacts a faceted upper surface of the drain region of the FET. Such a tip region enhances the electric field of the oxide ReRAM and thus helps to control forming of the conductive filament of the oxide ReRAM.

Abstract: Embodiments of the invention include resulting structures and a method for fabricating a vertical ReRAM array structure. The embodiments of the invention include forming alternating layers over a metal layer of a structure, wherein a layer of the alternating layers comprises a low resistivity material, masking one or more portions of a topmost layer of the alternating layers, and etching one or more portions of the alternating layers down to the metal layer. Embodiments of the invention also include depositing a lateral electrode layer over the etched one or more portions of the alternating layers, performing an etch back on the lateral electrode layer, and forming a vertical electrode layer over the structures.

Abstract: A method of forming a semiconductor device and resulting structures having stacked vertical field effect transistors (VFETs) connected in series. A first semiconductor fin and a second semiconductor fin are formed on a doped region of a substrate. A shared gate is formed over a channel region of the first semiconductor fin and a channel region of the second semiconductor fin. A shared epitaxy region is formed on a surface of the first semiconductor fin and a surface of the second semiconductor fin.

Abstract: A method of fabricating a semiconductor device includes providing a high-k dielectric layer arranged on a channel region including a first transistor area and a second transistor area. The method further includes depositing a multivalent oxide layer directly on the high-k dielectric layer of the first transistor area. The method includes depositing a first work function metal on the multivalent oxide layer of the first transistor area and directly on the high-k dielectric layer of the second transistor area.

Abstract: A semiconductor device including a fin structure present on a supporting substrate to provide a vertically orientated channel region. A first source/drain region having a first epitaxial material with a diamond shaped geometry is present at first end of the fin structure that is present on the supporting substrate. A second source/drain region having a second epitaxial material with said diamond shaped geometry that is present at the second end of the fin structure. A same geometry for the first and second epitaxial material of the first and second source/drain regions provides a symmetrical device.

Abstract: Bipolar junction transistor structures and methods for making the same are provide. The method includes: providing a substrate with an insulator layer and a device layer over the insulator layer, forming an intrinsic base from the device layer, forming emitter and collector regions from the device layer, and after forming i) the intrinsic base and ii) the emitter and collector regions, depositing a single crystalline extrinsic base over the intrinsic base.

Abstract: Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by forming a gradient threshold voltage adjusting gate dielectric structure between the bottom drain region of the FET and the top source region of the FET. The gradient threshold voltage adjusting gate dielectric structure includes a doped interface high-k gate dielectric material that is located in proximity to the bottom drain region and a non-doped high-k dielectric material that is located in proximity to the top source region. The non-doped high-k dielectric material has a higher threshold voltage than the doped interface high-k gate dielectric.

Abstract: Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by forming a gradient threshold voltage adjusting gate dielectric structure between the bottom drain region of the FET and the top source region of the FET. The gradient threshold voltage adjusting gate dielectric structure includes a doped interface high-k gate dielectric material that is located in proximity to the bottom drain region and a non-doped high-k dielectric material that is located in proximity to the top source region. The non-doped high-k dielectric material has a higher threshold voltage than the doped interface high-k gate dielectric.

Abstract: A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.

Abstract: A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.

Abstract: Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by introducing a threshold voltage modifying dopant into a physically exposed portion of a metal gate layer composed of an n-type workfunction TiN. The threshold voltage modifying dopant changes the threshold voltage of the original metal gate layer.

Abstract: A semiconductor structure including a multi-faceted epitaxial semiconductor structure within both a source region and a drain region and on exposed surfaces of a semiconductor fin is provided. The multi-faceted epitaxial semiconductor structure includes faceted epitaxial semiconductor material portions located on different portions of each vertical sidewall of the semiconductor fin and a topmost faceted epitaxial semiconductor material portion that is located on an exposed topmost horizontal surface of the semiconductor fin. The multi-faceted epitaxial semiconductor structure has increased surface area and thus an improvement in contact resistance can be obtained utilizing the same.

Abstract: A vertical, single column compound semiconductor bipolar junction transistor device includes an all-around extrinsic base. Aspect ratio trapping is employed during fabrication of the transistor device on a silicon substrate. Homojunction and heterojunction devices are formed using III-V materials with appropriate bandgaps. The emitter of the device may be electrically connected by a lateral buried metal contact.