Abstract: A semiconductor cell structure includes a first complementary metal oxide silicon (CMOS) a second CMOS, a first conducting element, and a second conducting element. The first and second CMOSs are disposed on the substrate and a reference voltage is provided to the first CMOS and the second CMOS respectively through the first conducting element and the second conducting element. A product of a width of the first conducting element multiplied by a channel length of the first CMOS is positively related to a product of a width of the second conducting element multiplied by a channel length of the second CMOS.

Abstract: The present disclosure is directed to a transfer blade including a first end segment, a second end segment opposite to the first end segment, and an intermediate segment extending from the first end segment to the second end segment. The first end segment includes a first contact region and the second end segment includes a second contact region. The first and second contact regions are configured to contact locations of a surface of a workpiece that do not overlap or are not aligned with a sensitive area of the workpiece. The sensitive area of the workpiece may be an EUV frame or a reticle of the workpiece. A non-contact region extends continuously along the first end segment, the intermediate segment, and the second end segment, and the non-contact region overlaps the sensitive area of the workpiece and is spaced apart from the sensitive area of the workpiece.

Abstract: The present disclosure is directed to workpiece support for supporting a workpiece during semiconductor processing. The workpiece support includes one or more support frame bodies including a plurality of spaced apart spacers on a first surface of the support frame bodies. The spacers include a first surface spaced apart from the first surface of the support frame body. The spacing between the first surface of the spacers and the first surface of the support frame body results in the underside of the workpiece contacting the spacers but not contacting the first surface of the support frame body. Portions of the underside of the workpiece that do not contact the first surface of the support frame body are less susceptible to damage or accumulation of unwanted debris.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a resistor region, forming a first gate structure on the resistor region, forming a first interlayer dielectric (ILD) layer around the first gate structure, transforming the first gate structure into a first metal gate having a gate electrode on the substrate and a hard mask on the gate electrode, and then forming a resistor on the first metal gate.

Abstract: A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed above the substrate. The second electrode is disposed on the first electrode. The first electrode is located between the second electrode and the substrate. The insulating layer is disposed between the first electrode and the second electrode. The interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode.

Abstract: A data storage device and a selecting bad data block method thereof which includes: writing data to a sample block; reading written data of the sample block as read data; comparing the read data and the written data of each data column in sample block, and calculating a number of error bits in each chunk accordingly; selecting a column with the largest number of error bits in a chunk with the largest number of error bits as a bad data column; and recording the sample block as a bad data block when determining that the number of error bits in the chunk is greater than or equal to the first threshold value and the number of bad columns in the chunk is greater than or equal to the second threshold value.

Abstract: A classifying sensing system, a classifying method performed using a sensing system, a tactile sensor, and a method of fabricating a tactile sensor. The classifying sensing system comprises a first spiking neural network, SNN, encoder configured for encoding an event-based output of a vision sensor into individual vision modality spiking representations with a first output size; a second SNN encoder configured for encoding an event-based output of a tactile sensor into individual tactile modality spiking representations with a second output size; a combination layer configured for merging the vision modality spiking representations and the tactile modality spiking representations; and a task SNN configured to receive the merged vision modality spiking representations and tactile modality spiking representations and output vision-tactile modality spiking representations with a third output size for classification.

Abstract: A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first NMOS region, a first PMOS region, a second NMOS region, a second PMOS region, and a MOS capacitor region, forming a fin NMOS transistor on the first NMOS region, forming a fin PMOS transistor on the first PMOS region, forming a planar NMOS transistor on the second NMOS region, forming a planar PMOS transistor on the second PMOS region, and forming a planar MOS capacitor on the MOS capacitor region.

Abstract: A semiconductor device includes a substrate having an input/output (I/O) region, an one time programmable (OTP) capacitor region, and a core region, a first metal gate disposed on the I/O region, a second metal gate disposed on the core region, and a third metal gate disposed on the OTP capacitor region. Preferably, the first metal gate includes a first high-k dielectric layer, the second metal gate includes a second high-k dielectric layer, and the first high-k dielectric layer and the second high-k dielectric layer include an I-shape.

Abstract: A micro light-emitting diode display panel including first and second substrates, micro light-emitting diodes, a wavelength conversion layer, a light-shielding pattern layer, a light filter layer, and an air gap is provided. The micro light-emitting diodes are disposed on the first substrate and respectively located in a plurality of sub-pixel areas. The micro light-emitting diodes are adapted to emit a light beam. The wavelength conversion layer is overlapped with at least a portion of the micro light-emitting diodes. The light beam is used to excite the wavelength conversion layer to emit a converted light beam. The light filter layer is disposed between the wavelength conversion layer and the second substrate and overlapped with the micro light-emitting diodes. The air gap is disposed between any two adjacent ones of any one of the micro light-emitting diodes, the second substrate, the wavelength conversion layer, and the light filter layer.

Abstract: A controller having a wireless transmission interface is provided. The controller includes an amplifier, an analog-to-digital converter, a digital filter, a processor, and a radio frequency signal transceiver. The amplifier is coupled to the wireless transmission interface, and generates an amplification signal according to an input signal. The analog-to-digital converter is coupled to the amplifier, and configured to convert the amplification signal into a digital format. The digital filter is coupled to the analog-to-digital converter, and configured to filter the amplification signal in the digital format to generate a filtered signal. The processor is coupled to the digital filter, and configured to perform a calculation on the filtered signal to generate a calculation result. The radio frequency signal transceiver is coupled to the processor, and obtains received information according to the calculation result and the filtered signal.

Abstract: A mounting base is provided. The mounting base is adapted to be selectively affixed to different supporting structures. The mounting base includes a mounting base body, a first hook, a second hook and a rotatable member. The first hook is formed on the mounting base body. The second hook is formed on the mounting base body. The rotatable member is pivoted on the mounting base body. The rotatable member is adapted to be rotated between a first orientation and the second orientation relative to the mounting base body. When the rotatable member is in the first orientation, the rotatable member is restricted by the mounting base body. When the rotatable member is in the second orientation, the rotatable member is restricted by the mounting base body.

Abstract: A one-time programmable (OTP) memory cell includes a substrate having a first conductivity type and having an active area surrounded by an isolation region, a transistor disposed on the active area, and a capacitor disposed on the active area and electrically coupled to the transistor. The capacitor comprises a diffusion region of a second conductivity type in the substrate, a metallic film in direct contact with the active area, a capacitor dielectric layer on the metallic film, and a metal gate surrounded by the capacitor dielectric layer. The diffusion region and the metallic film constitute a capacitor bottom plate.

Abstract: Disclosed herein are system, apparatus, article of manufacture, method and/or computer program product embodiments, and/or combinations and sub-combinations thereof, for dynamic tone mapping of video content. An example embodiment operates by identifying, by a dynamic tone mapping system executing on a media device, characteristics of a first video signal having a first dynamic range based on a frame-by-frame analysis of the first video signal. The example embodiment further operates by modifying, by the dynamic tone mapping system, a tone mapping curve based on the characteristics of the first video signal to generate a modified tone mapping curve. Subsequently, the example embodiment operates by converting, by the dynamic tone mapping system, the first video signal based on the modified tone mapping curve to generate a second video signal having a second dynamic range that is less than the first dynamic range.

Abstract: A mechanism and technology for inhibiting methane production in ruminants, which mixes an oscillating magnet composition 1~3% into the feedstuff, so as to inhibit the generation and reproduction of methanogens in the gastrointestinal tract of ruminants, thereby reducing the production of methane; wherein, the composition weight percentage of the oscillating magnet composition includes 72%~82% a far-infrared natural mineral base material, 10%~20% a biochar, 2%~7% a seaweed element and an activated water agent composed of 0.4%~1% of a natural ore; wherein the far-infrared natural mineral base material emit far-infrared rays, make water molecules cluster smaller, thereby improving the dissolved oxygen in the gastrointestinal tract to inhibit of the generation and reproduction of methanogens.

Abstract: A mechanism and technology for inhibiting methane production in paddy, which mixes the oscillating magnet composition with a weight ratio of 400 to 500 kilograms per 666 square meters into the soil of the paddy, so as to increase the dissolved oxygen in the soil, to inhibit the generation of methanogens, and then reduce the amount of methane production; wherein, the composition weight percentage of the oscillating magnet composition includes 72%˜82% far-infrared natural mineral base material, 10%˜18% biochar, 2%˜5% seaweed element and activated water agent composed of 3%˜5% of a natural ore; the far-infrared natural mineral base material can emit far-infrared rays, make the water molecules cluster smaller, and the smaller water molecules are easier to penetrate the biofilm.

Abstract: An electrical connector includes an insulating body, a plurality of conductive terminals, a plurality of grounding terminals and two shielding elements. The plurality of the conductive terminals are mounted in the insulating body. The plurality of the grounding terminals are mounted in the insulating body. The plurality of the grounding terminals are located adjacent to two outer sides of the plurality of the conductive terminals. The two shielding elements are disposed at a front end of an upper surface and a front end of a lower surface of the insulating body. Each shielding element has a base frame. Two sides of a rear edge of the base frame are connected with two contact portions. The contact portions of the two shielding elements contact with the plurality of the grounding terminals.

Abstract: A semiconductor device includes a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, a first mesa isolation on the HEMT region, a HEMT on the first mesa isolation, a second mesa isolation on the capacitor region, and a capacitor on the second mesa isolation. The semiconductor device further includes buffer layer between the substrate, the first mesa isolation, and the second mesa isolation, in which bottom surfaces of the first mesa isolation and the second mesa isolation are coplanar.

Abstract: A method for fabricating a semiconductor device includes the steps of providing a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, forming a first mesa isolation on the HEMT region and a second mesa isolation on the capacitor region, forming a HEMT on the first mesa isolation, and then forming a capacitor on the second mesa isolation.