Abstract: A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve uniform thickness in memory cell dielectric layers, particularly where the dielectric layer is formed in a container-type capacitor structure. In accordance with several embodiments of the present invention, a process for forming a capacitor structure over a semiconductor substrate is provided. Other embodiments of the present invention relate to processes for forming memory cell capacitor structures, memory cells, and memory cell arrays. Capacitor structures, memory cells, and memory cell arrays are also provided.

Abstract: A rapid method is provided for the on-line spectroscopic determination of lignin content and/or kappa number in wood pulps. Unlike currently available commercial instrumentation, the method enables one to measure lignin content independently of species variations and pulp consistency.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.

Abstract: A distortion reduction system uses upstream signal information from carrier frequencies in a signal to be amplified, to determine at least one frequency for the distortion generated by an amplifier amplifying the signal. A sample of an output is taken, and a distortion detection circuitry is used to detect the amplitude of the distortion at least at the one frequency. In response to the amplitude of the distortion at the one frequency, the processing circuitry provides gain and/or phase control signal(s) to adjust the relative phase and/or gain between combining distortion products to reduce the amplitude of the distortion.

Abstract: A method of and printing system for printing a multiple page print job on a print medium. A shingling sequence for a first page of the multiple page print job is opened by successively passing a printhead over the print medium and the first page is printed in a steady state mode of the printhead. The steady state mode of the printhead is maintained during a transition between printing the first page and printing a second page of the multiple page print job, such that the second page is printed as a continuation of the shingling sequence for the first page.

Abstract: An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.

Abstract: In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the invention encompasses a method of treating a plurality of substrates. A treating member is provided proximate a first substrate, and an initial layer of frozen material is formed over a surface of the treating member. A surface of the first substrate is treated by moving at least one of the treating member and the first substrate relative to the other of the treating member and the first substrate. After the surface of the first substrate is treated, the initial layer of frozen material is removed from over the surface of the treating member.

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

Abstract: The invention includes a method of forming a conductive interconnect. An electrical node location is defined to be supported by a silicon-containing substrate. A silicide is formed in contact with the electrical node location. The silicide is formed by exposing the substrate to hydrogen, TiCl4 and plasma conditions to cause Ti from the TiCl4 to combine with silicon of the substrate to form TiSix. Conductively doped silicon material is formed over the silicide. The conductively doped silicon material is exposed to one or more temperatures of at least about 800° C. The silicide is also exposed to the temperatures of at least about 800° C.

Abstract: In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the invention encompasses a method of treating a plurality of substrates. A treating member is provided proximate a first substrate, and an initial layer of frozen material is formed over a surface of the treating member. A surface of the first substrate is treated by moving at least one of the treating member and the first substrate relative to the other of the treating member and the first substrate. After the surface of the first substrate is treated, the initial layer of frozen material is removed from over the surface of the treating member.

Abstract: An apparatus and method for attaching a semiconductor die to a lead frame wherein the electric contact points of the semiconductor die are relocated to the periphery of the semiconductor die through a plurality of conductive traces. A plurality of leads extends from the lead frame over the conductive traces proximate the semiconductor die periphery and directly attaches to and makes electrical contact with the conductive traces in an LOC arrangement. Alternately, a connector may contact a portion of the conductive trace to make contact therewith.

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

Abstract: Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location.

Abstract: A system and technique for phased array antenna beam steering for transmitting and receiving without sending the waveform through an actual (physical) time delay when a time varying frequency is used as the waveform. The inventive system is adapted for use with an antenna having an array of radiating elements and includes a plurality of signal sources. Each source is adapted to provide a signal having a predetermined frequency offset signal for an associated radiating element or set of radiating elements. For transmit a plurality of first mixers is provided. Each of the first mixers is coupled to receive an excitation signal as a first input and the output from a respective one of the sources as a second input. The output of each mixer is coupled to a respective subset of the antenna radiating elements. In effect, each of the sources provides a virtual time delay.

Abstract: A group notification system and associated method that allow particular activities to be executed based on the group dynamics, such as the dynamics of organizing meetings. The system facilitates the availability of knowledge concerning the proximity and direction of movement of individuals, objects, or groups, and whether this information satisfies preset criteria or rules. One such criterion is that the proximity distance of the group members be less than a predetermined threshold range. The threshold range can be adjustable or programmable.

Abstract: A system and method for controlling UNIX group access using an LDAP directory are disclosed. The system and method may be used to overcome a limitation on the size of groups that may be encountered in certain UNIX-based operating systems. A directory may be populated with entries for each of a plurality of users. Each entry in the directory may include information such as a user ID, user password, one or more group names, and optionally one or more hostnames. One or more access control lists may be generated from the directory entries. The operating system may check the access control list(s) to restrict access to the appropriate files or directories (i.e., data sources). For each data source which permits access by a particular group name, access may be granted to the data source to the users in the appropriate group access control list. Likewise, access may be denied to users who are not listed in the appropriate group access control list and who are not otherwise entitled to access (e.g.

Abstract: An exemplary embodiment of the present invention discloses a method for forming a forming a storage capacitor having a uniform dielectric film, by a the steps of: forming a bottom electrode of the storage capacitor and an insulation material about the bottom electrode, the bottom electrode comprises a nitridation receptive material and the insulation material comprises a nitridation resistive material; depositing a layer of non-doped silicon to a thickness of 20Å or less over the bottom electrode and the insulation material; converting the silicon layer to a silicon nitride compound; depositing a silicon nitride of uniform thickness directly on the silicon nitride compound while using the silicon nitride compound as a nitride-nucleation enhancing surface; exposing the silicon nitride compound and the silicon nitride layer to an oxidation ambient to form a storage capacitor dielectric film; and then forming a top electrode of the storage capacitor over the storage capacitor dielectric film.

Abstract: A method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.