Patents by Inventor Trung (Tim) Trinh

Trung (Tim) Trinh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020160541
    Abstract: A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.
    Type: Application
    Filed: April 27, 2001
    Publication date: October 31, 2002
    Inventors: D. Mark Durcan, Gurtej Sandhu, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Patent number: 6472756
    Abstract: A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.
    Type: Grant
    Filed: February 21, 2001
    Date of Patent: October 29, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Trung T. Doan, Gurtej Singh Sandhu, Kirk Prall, Sujit Sharan
  • Patent number: 6472320
    Abstract: A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: October 29, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Trung T. Doan
  • Patent number: 6472323
    Abstract: A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
    Type: Grant
    Filed: March 28, 2000
    Date of Patent: October 29, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Scott Meikle, Trung Doan
  • Publication number: 20020155707
    Abstract: In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the invention encompasses a method of treating a plurality of substrates. A treating member is provided proximate a first substrate, and an initial layer of frozen material is formed over a surface of the treating member. A surface of the first substrate is treated by moving at least one of the treating member and the first substrate relative to the other of the treating member and the first substrate. After the surface of the first substrate is treated, the initial layer of frozen material is removed from over the surface of the treating member.
    Type: Application
    Filed: September 2, 1999
    Publication date: October 24, 2002
    Inventors: SCOTT E. MOORE, TRUNG TRI DOAN
  • Patent number: 6468304
    Abstract: A device which can be implanted in the body and comprises an electrically conducting support covered with a layer of electrically conducting polymer, to which layer is attached at least one biologically active substance of an anionic or cationic nature. The deposition of the polymer is carried out, in a first stage, by electropolymerization directly directly on the support or, according to an alternative form, by deposition of the polymer in solution on the support. In a second stage, electrochemical oxidation or reduction is conducted and the biologically active substance with an anionic or cationic nature is attached to the polymer.
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: October 22, 2002
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Jean-Luc Dubois-Rande, Trung Le Doan, Minh Chau Pham, BenoƮt Piro, Emmanuel Teiger, Jean Pierre Tenu
  • Patent number: 6464564
    Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.
    Type: Grant
    Filed: April 18, 2001
    Date of Patent: October 15, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Trung Tri Doan
  • Patent number: 6464561
    Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.
    Type: Grant
    Filed: October 4, 2001
    Date of Patent: October 15, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Trung Tri Doan
  • Patent number: 6464560
    Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.
    Type: Grant
    Filed: July 3, 2001
    Date of Patent: October 15, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Trung Tri Doan
  • Publication number: 20020146849
    Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
    Type: Application
    Filed: April 10, 2001
    Publication date: October 10, 2002
    Inventors: D. Mark Durcan, Trung T. Doan, Roger Lee, Dennis Keller, Ren Earl
  • Publication number: 20020146603
    Abstract: A fuel cell system made up of a plurality of fuel cells. Each cell includes a fuel inlet, an oxidant inlet, a fuel side product outlet and an oxidant side product outlet. A common fuel supply line is provided for the fuel inlets. A common oxidant supply line is provided for the oxidant inlets. A common product purging mechanism is coupled to the outlets for purging the same of unused fuel, unused oxidant, fuel side product and oxidant side product. The product purging mechanism includes valving structure operable to selectively and independently open the outlets of a given cell. A method for operating such a fuel cell system includes supplying fuel to the fuel inlets from a common source of fuel and supplying an oxidant to the oxidant inlets from a common source of oxidant. The outlets of a given cell are selectively opened to purge fuel product and oxidant product from the given cell while the outlets of other cells are kept closed.
    Type: Application
    Filed: May 31, 2002
    Publication date: October 10, 2002
    Applicant: TVN Systems, Inc.
    Inventor: Trung Van Nguyen
  • Publication number: 20020130395
    Abstract: A process for forming vertical contacts in the manufacture of integrated circuits, and devices so manufactured. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch of the interconnect trough. The process includes the steps of: forming an insulating layer on the surface of a substrate; forming an etch stop layer on the surface of the insulating layer; forming an opening in the etch stop layer; etching to a first depth through the opening in the etch stop layer and into the insulating layer to form an interconnect trough; forming a photoresist mask on the surface of the etch stop layer and in the trough; and continuing to etch through the insulating layer until reaching the surface of the substrate to form a contact hole. The above process may be repeated one or more times during the formation of multilevel metal integrated circuits.
    Type: Application
    Filed: May 1, 2002
    Publication date: September 19, 2002
    Inventors: Charles H. Dennison, Trung T. Doan
  • Publication number: 20020132375
    Abstract: This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
    Type: Application
    Filed: March 15, 2001
    Publication date: September 19, 2002
    Inventors: Trung T. Doan, Roger Lee, Dennis Keller, Gurtej Sandhu, Ren Earl
  • Patent number: 6452024
    Abstract: A process for the extraction and purification of Paclitaxel from a natural source of taxanes, comprising extracting Paclitaxel with an organic solvent from a natural source of taxanes, and treating the raw material with a base or an acid to obtain a biomass by precipitation. The biomass is isolated and dried, and resin and natural pigments are removed. The biomass is then dissolved in acetone and at least one non-polar solvent is added, until a Paclitaxel-enriched oily phase is obtained. The Paclitaxel-enriched oily phase is then treated with a base or an acid to obtain a second biomass, which is recovered by precipitation and dried. A solution of the second biomass in a volatile solvent is chromatographically purified at least once and crystallized.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: September 17, 2002
    Assignee: Chaichem Pharmaceuticals International
    Inventors: Trung Bui-Khac, Nicolas Dupuis
  • Publication number: 20020127953
    Abstract: A method and apparatus for releasably attaching a planarizing medium, such as a polishing pad, to the platen of a chemical-mechanical planarization machine. In one embodiment, the apparatus can include several apertures in the upper surface of the platen that are coupled to a vacuum source. When a vacuum is drawn through the apertures in the platen, the polishing pad is drawn tightly against the platen and may therefore be less likely to wrinkle when a semiconductor substrate is engaged with the polishing pad during planarization. When the vacuum is released, the polishing pad can be easily separated from the platen. The apparatus can further include a liquid trap to separate liquid from the fluid drawn by the vacuum source through the apertures, and can also include a releasable stop to prevent the polishing pad from separating from the platen should the vacuum source be deactivated while the platen is in motion.
    Type: Application
    Filed: August 9, 2001
    Publication date: September 12, 2002
    Inventors: Trung Tri Doan, Scott E. Moore
  • Publication number: 20020125508
    Abstract: Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location.
    Type: Application
    Filed: May 3, 2002
    Publication date: September 12, 2002
    Applicant: Micron Technology, Inc.
    Inventors: D. Mark Durcan, Trung T. Doan, Roger R. Lee, Fernando Gonzalez, Er-Xuan Ping
  • Patent number: 6448991
    Abstract: A device adapted to recognize a color dye frame from a color ribbon (for use in a thermal printer) comprises a LED (light emitting diode) capable of producing white light, positioned so that the ribbon passes between the LED and a photo-transistor. The photo-transistor collects the light emitted by the LED as it passes through the color dye frame and generate a specific exit voltage associated with the color of the dye frame. An analog to digital converter transforms the voltage into a digital signal which is fed into a micro-computer. The micro-computer processes the digital signal by comparing the digital signal to a stored set of values associated with each color dye frame.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: September 10, 2002
    Assignee: Z.I.H. Corp.
    Inventor: Trung Dung Doan
  • Patent number: 6446004
    Abstract: A system and associated method that allow particular requests to be executed at some point in the future without specifying the exact time or necessarily a precise location. The execution time of the request is linked to the arrival of a person or object at, or near a geographic destination location. When a person, an object, or a group of persons or objects, arrives at the destination location, or comes close to it, the request to interact will be executed. The proximity threshold can be adjustable or programmable.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: September 3, 2002
    Assignee: International Business Machines Corporation
    Inventors: Kevin Trung Cao, Daniel Alexander Ford, Reiner Kraft
  • Publication number: 20020117752
    Abstract: A process for forming vertical contacts in the manufacture of integrated circuits, and devices so manufactured. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch of the interconnect trough. The process includes the steps of: forming an insulating layer on the surface of a substrate; forming an etch stop layer on the surface of the insulating layer; forming an opening in the etch stop layer; etching to a first depth through the opening in the etch stop layer and into the insulating layer to form an interconnect trough; forming a photoresist mask on the surface of the etch stop layer and in the trough; and continuing to etch through the insulating layer until reaching the surface of the substrate to form a contact hole. The above process may be repeated one or more times during the formation of multilevel metal integrated circuits.
    Type: Application
    Filed: May 1, 2002
    Publication date: August 29, 2002
    Inventors: Charles H. Dennison, Trung T. Doan
  • Publication number: 20020118118
    Abstract: A system and method for communication of information that has particular significance to a specific location only to those individuals that are at or near that geo-spatial location. In particular, providing safety factor data and alerts is a preferred use of the invention. The invention allows information to be tailored to the individual at that location by selectively filtering what is communicated and what is not. The system includes a transmitting proximity event server, a GPS client wireless component that can be a personal wireless communication device (such as Palm Pilot, cellular digital phones, etc.) or personal computer configured for use within a global position satellite network.
    Type: Application
    Filed: February 26, 2001
    Publication date: August 29, 2002
    Applicant: International Business Machines Corporation
    Inventors: Jussi Petri Myllymaki, Kevin Trung Cao, Daniel Alexander Ford, Reiner Kraft