Abstract: A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second temperature different from the first temperature, the first layer may be contacted with a second precursor, chemisorbing a second layer at least one monolayer thick on the first layer. Temperature may be altered by adding or removing heat with a thermoelectric heat pump. The altering the substrate temperature may occur from the first to the second temperature. The second layer may be reacted with the first layer by heating to a third temperature higher than the second temperature. A deposition method may also include atomic layer depositing a first specie of a substrate approximately at an optimum temperature for the first specie deposition.

Abstract: According to different embodiments of the present invention, various methods, devices and systems are described for managing power in charge pumps in a non-volatile memory system having a high voltage charge pump and associated regulator. A method includes the following operations, receiving an operation command corresponding to an operation, pumping up a charge pump output voltage to a desired output voltage, turning off the regulator and the charge pump when the output voltage is approximately the desired output voltage compensating for charge sharing by turning on the charge pump and setting a pump clock rate to a slow clock rate in order to avoid overshooting the desired output voltage by the charge pump while the operation is being carried out, and compensating for junction leakage by turning on the regulator and the charge pump until the charge pump output voltage is the desired output voltage.

Abstract: The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations.

Abstract: A method and system of providing context aware announcements is provided. Context call handling rules are applied to determine a current context of an incoming call. At least one context aware announcement is provided for providing information associated the current context and call information.

Abstract: A secure e-mail service, executable on a recipient e-mail server or associated computer system, implements inverted security control over recipient content stored by the recipient e-mail server. Recipient content is received in conjunction with e-mail messages transmitted directed to recipients from sender computer systems unassociated with the secure e-mail service. The secure e-mail service includes a policy engine that operates on e-mail messages, as received from a communications network, to evaluate metadata features of the message and select a corresponding encryption key. The service further includes a content processing engine that operates to encrypt a portion of the message in a manner that allows subsequent decryption of said portion using the selected encryption key. A service interface enables transfer of the e-mail message, including the portion as encrypted, to the recipient e-mail server, which supports access by the recipients.

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract: The invention is directed to a device that functions as an adaptor for a micro-memory card. The device includes a port to receive the micro-memory card and an internal interface within the port allows for electrical connection between the device and the micro-memory card. The device also includes a card interface that conforms to a standard sized memory card. The device can be inserted into another device that accepts such standard sized memory card so that the other device can store data onto the micro-memory card connected to the port. In addition, the device also includes a host interface, such as an external shieldless USB tab protruding from an edge of the device, or a wireless USB interface to allow for wireless USB communication.

Abstract: A grease seal cup for a splined joint between a drive shaft and a driven shaft comprises a cylindrical portion adapted to form a seal with the outer surface of the drive shaft and a seal with a sealing member, such as a spanner nut, of the driven shaft. The grease seal cup, comprising a flexible polymer material, tightly squeezed during installation to form the seals. The pre-fabricated light weight grease seal cup can be used in existing splined joints without adversely affecting the weight balance.

Abstract: According to different embodiments of the present invention, various methods, devices and systems are described for managing power in charge pumps in a non-volatile memory system having a high voltage charge pump and associated regulator. A method includes the following operations, receiving an operation command corresponding to an operation, pumping up a charge pump output voltage to a desired output voltage, turning off the regulator and the charge pump when the output voltage is approximately the desired output voltage compensating for charge sharing by turning on the charge pump and setting a pump clock rate to a slow clock rate in order to avoid overshooting the desired output voltage by the charge pump while the operation is being carried out, and compensating for junction leakage by turning on the regulator and the charge pump until the charge pump output voltage is the desired output voltage.

Abstract: The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A method for forming a floating gate semiconductor device such as an electrically erasable programmable read only memory is provided. The device includes a silicon substrate having an electrically isolated active area. A gate oxide, as well as other components of a FET (e.g., source, drain) are formed in the active area. A self aligned floating gate is formed by depositing a conductive layer (e.g., polysilicon) into the recess and over the gate oxide. The conductive layer is then chemically mechanically planarized to an endpoint of the isolation layer so that all of the conductive layer except material in the recess and on the gate oxide is removed. Following formation of the floating gate an insulating layer is formed on the floating gate and a control gate is formed on the insulating layer.

Abstract: The present invention relates to novel depsipeptide compounds. The invention also relates to pharmaceutical compositions of these compounds and methods of using these compounds as antibacterial compounds. The invention also relates to methods of producing these novel depsipeptide compounds and intermediates used in producing these compounds.

Abstract: A semiconductor package component includes a base die and a secondary die flip chip mounted to the base die. The base die includes a set of stacking contacts for flip chip mounting the secondary die to the base die, and a set of interconnect contacts configured as an internal signal transmission system, and a physical structure for supporting a terminal contact system of the package component. The package component also includes an encapsulant on the base die encapsulating the interconnect contacts, an underfill layer between the dice, and terminal contacts configured for flip chip mounting the package component to a supporting substrate. A method for fabricating the package component includes the steps of providing a base wafer containing a plurality of base dice, and flip chip mounting the secondary dice to the base dice on the base wafer.

Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

Abstract: A lens delivery system having a two folding mechanisms. The first mechanism is structured to fold an intraocular lens stabilizing ring, and the second mechanism is designed to fold an intraocular lens.

Abstract: An improved small profile hanger system for ceiling suspended lighting fixtures comprises a plurality of hanger assemblies having a support stem and a downwardly arced crossbar. The support stem and crossbar have a relatively small elliptical profile have two sets of wire holes, each set of wire holes having an inner hole and an outer hole overlapping the inner hole, the inner and outer holes defining an intervening gap narrower than the dimension of either hole. The holes are sized to receive an insulated wire; the intervening gap preventing the wire from crossing over into the adjacent hole. The wire holes of the support stem are in communication with the wire holes of the crossbar providing a fully enclosed wiring passage from a ballast box assembly installed above a suspended ceiling to energize a lamp in a diffuser depending from a pair of the crossbars.

Abstract: A method for an email voice reader capable of adapting gender and emotions of a sender, the method comprising: sending email data by the sender via a directory service, the directory service storing a plurality of attributes of the email data, the plurality of attributes being pre-selected by the sender; receiving the email data by a recipient; enabling the recipient to listen to the email data via the email voice reader, the email data including the plurality of attributes pre-selected by the sender and stored at the directory service; and automatically identifying the gender of the sender by allowing the sender to specify and add a first attribute to the plurality of attributes stored at the directory service, wherein the email voice reader of the recipient automatically recognizes whether to apply a male voice or a female voice based on the added first attribute.