Abstract: A method for fabricating an integrated circuit includes forming a first pattern metal layer comprising a plurality of metal tracks extending in a first direction. Each of the plurality of metal tracks is separated from its adjacent one of the plurality of metal tracks by a first pitch. The method further includes forming a second pattern metal layer formed over the first pattern metal layer. The second pattern metal layer comprises a second plurality of metal tracks extending in the first direction. Each of the second plurality of metal tracks is separated from its adjacent one of the second plurality of metal tracks by a second pitch. The method further includes forming a third pattern metal layer disposed between the first pattern metal layer and the second pattern metal layer.

Abstract: A method of forming a semiconductor arrangement includes forming a first source pad over a semiconductor layer. A first nanosheet is formed contacting the first source pad. A gate pad is formed adjacent the first nanosheet. A first drain pad is formed over the gate pad and contacting the first nanosheet. A backside interconnect line is formed under the gate pad and the first source pad. A first backside contact is formed contacting at least one of the backside interconnect line, the first source pad, or the gate pad.

Abstract: The present disclosure describes a semiconductor structure having a power distribution network including first and second conductive lines. A substrate includes a first surface that is in contact with the power distribution network. A plurality of backside vias are in the substrate and electrically coupled to the first conductive line. A via rail is on a second surface of the substrate that opposes the first surface. A first interlayer dielectric is on the via rail and on the substrate. A second interlayer dielectric is on the first interlayer dielectric. A third interlayer dielectric is on the second interlayer dielectric. First and top interconnect layers are in the second and third interlayer dielectrics, respectively. Deep vias are in the interlayer dielectric and electrically coupled to the via rail. The deep vias are also connected to the first and top interconnect layers. A power supply in/out layer is on the third interlayer dielectric and in contact with the top interconnect layer.

Abstract: A method (of manufacturing a semiconductor device) includes generating a corresponding layout diagram including: regarding first and second active area patterns which (1) are correspondingly nearest to a boundary between, and (2) are correspondingly in, first and second abutting cells, and for each gate pattern that intersects the first or second active area pattern, selecting the gate patterns for which a first distance from a nearest corresponding via-to-gate (VG) pattern to a corresponding cut-gate section is equal to or greater than a first reference value; and for each selected gate pattern, relative to a first size, setting a size of a corresponding cut-gate section to a second size; the first size otherwise resulting in an overhang of a gate remnant portion extending towards the boundary by a first length; and the second size resulting in the overhang extending by a second length smaller than the first length.

Abstract: An integrated circuit with mixed poly pitch cells with a plurality of different pitch sizes is disclosed. The integrated circuit includes: at least a minimum unit each with at least a first number of first poly pitch cells with a first pitch size, and a second number of second poly pitch cells with a second pitch size, the first pitch size PP is different from the second pitch size PP1, the greatest common divisor of the first pitch size PP and the second pitch size PP1 is GCD, wherein GCD is an integer greater than 1; a gate length of the first pitch size is Lg; a gate length of the second pitch size is Lg1; Lg and Lg1 are capable of being extended to achieve G-bias for power and speed optimization of the minimum unit and the integrated circuit.

Abstract: An integrated circuit (IC) structure includes a plurality of first metal segments in a first metal layer of a semiconductor substrate, the plurality of first metal segments corresponding to first tracks, a plurality of second metal segments in a second metal layer of the semiconductor substrate adjacent to the first metal layer, the plurality of second metal segments corresponding to second tracks perpendicular to the first tracks, and a plurality of via structures configured to electrically connect the plurality of first metal segments to the plurality of second metal segments.

Abstract: An information display method for a virtual object, performed by a terminal on which a virtual object application program is run, is provided. The method includes: obtaining an instruction to display genealogy information corresponding to a target virtual object; obtaining the genealogy information of the target virtual object based on the instruction, the genealogy information of the target virtual object comprising information about n virtual objects having a genetic relationship with the target virtual object, n being a positive integer; and displaying the information about the n virtual objects, the information about the n virtual objects comprising an image of a virtual object determined by genes of the virtual object based on a genetic inheritance rule. Counterpart apparatus, terminal, server, and non-transitory computer-readable medium embodiments are also contemplated.

Abstract: A method of generating an IC layout diagram includes overlapping a channel region of an upper transistor of a complementary field-effect transistor (CFET) in an IC layout with a gate region of the CFET, thereby defining a channel overlap region, positioning an isolation region in the IC layout, the isolation region including an entirety of the channel overlap region, intersecting the isolation region with a conductive region, and generating an IC layout diagram based on the IC layout.

Abstract: A semiconductor device includes a first transistor, a second transistor, a third transistor, and a contact. The first transistor includes a first source/drain (S/D), a second S/D, and a first gate between the first S/D and the second S/D. The first transistor and the second transistor are stacked over the third transistor. The contact covers the second S/D of the first transistor. The contact is electrically connected to the second transistor and electrically isolated from the second S/D.

Abstract: A semiconductor device includes a first cell. The first cell includes: a first source/drain region and a second source/drain region in a first layer; a plurality of gate electrodes in a second layer, the plurality of gate electrodes defining at least one odd-numbered track and at least one even-numbered track; a first power rail extending in a second direction perpendicular to the first direction in a third layer; a first conductive via arranged in a fourth layer, the first conductive via being within a first odd-numbered track and non-overlapped with any of the plurality of gate electrodes from a top-view perspective; a second power rail extending in the second direction in a fifth layer; and a second conductive via arranged in a sixth layer, the second conductive via being within a first even-numbered track and non-overlapped with any of the plurality of gate electrodes from a top-view perspective.

Abstract: A complementary field effect transistor (CFET) structure includes a vertical stack of first and second transistors, wherein the first transistor includes a first channel extending in a first direction from a first source/drain (S/D) region to a second S/D region through a gate extending in a second direction perpendicular to the first direction and the second transistor includes a second channel extending in the first direction from a third S/D region to a fourth S/D region through the gate. A first conductive trace extends in the first direction over the gate, a first via extends from the first S/D region to the first conductive trace and is aligned with the third S/D region along the second direction, a second via extends from the fourth S/D region to the first conductive trace, and the first via has a first height greater than a second height of the second via.

Abstract: An integrated circuit is disclosed. The integrated circuit includes conductive rails, signal rails, at least one first via, and at least one first conductive segment. The at least one first via is disposed between the first conductive layer and the second conductive layer, and couples a first signal rail of the signal rails to at least one of the conductive rails. The first signal rail is configured to transmit a supply signal through the at least one first via and the at least one of the conductive rails to at least one element of the integrated circuit. The at least one first conductive segment is disposed between the first conductive layer and the second conductive layer. The at least one first conductive segment is coupled to the at least one of the conductive rails and is separate from the first signal rail.

Abstract: The present invention relates to compositions comprising polypeptides having xylanase activity and polypeptides having arabinofuranosidase activity for use in, e.g., animal feed. The present invention further relates to polypeptides having arabinofuranosidase activity, polypeptides having xylanase activity and polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods of producing and using the polypeptides.

Abstract: A method of forming a semiconductor arrangement includes forming a first source pad over a semiconductor layer. A first nanosheet is formed contacting the first source pad. A gate pad is formed adjacent the first nanosheet. A first drain pad is formed over the gate pad and contacting the first nanosheet. A backside interconnect line is formed under the gate pad and the first source pad. A first backside contact is formed contacting at least one of the backside interconnect line, the first source pad, or the gate pad.

Abstract: A memory device is provided. The memory device includes first and second pull-up transistors. The first pull-up transistor is disposed over a semiconductor substrate, and including a first gate structure and two first source/drain structures at opposite sides of the first gate structure. The second pull-up transistor is laterally spaced apart from the first pull-up transistor, and including a second gate structure and two second source/drain structures at opposite sides of the second gate structure. The first and second gate structures extend along a first direction and laterally spaced apart from each other along a second direction intersected with the first direction. The first gate structure further extends along a sidewall of one of the second source/drain structures, and the second gate structure further extends along a sidewall of one of the first source/drain structures.

Abstract: A method includes doping a region through a first surface of a semiconductor substrate; forming a plurality of doped structures within the semiconductor substrate, wherein each of the plurality of doped structures extends along a vertical direction and is in contact with the doped region; forming a plurality of transistors over the first surface, wherein each of the transistors comprises one or more source/drain structures electrically coupled to the doped region through a corresponding one of the doped structures; forming a plurality of interconnect structures over the first surface, wherein each of the interconnect structures is electrically coupled to at least one of the transistors; and testing electrical connections between the interconnect structures and the transistors based on detecting signals present on the doped region through a second surface of the semiconductor substrate, the second surface opposite to the first surface.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.

Abstract: An integrated circuit includes a first power rail, a first signal line, a first transistor and a second transistor. The first power rail is on a back-side of a substrate and is configured to supply a first supply voltage. The first signal line is on the back-side of the substrate and is separated from the first power rail. The first transistor has a first active region is in a front-side of the substrate. The first active region is overlapped by the first power rail and is electrically coupled to the first power rail. The second transistor has a second active region that is in the front-side of the substrate. The second active region is separated from the first active region, is overlapped by the first signal line, and is configured to receive the first supply voltage of the first power rail through the first active region of the first transistor.

Abstract: A semiconductor device, including: a transistor layer, including a first active region configured to be a source/drain terminal of a first transistor and a second active region configured to be a source/drain terminal of a second transistor; a dielectric layer, disposed on the source/drain terminals of the first and second transistors; a conductive strip, included in the dielectric layer and extending from the first active region toward the second active region for signal connection.