Abstract: A ball screw with force sensor in radial direction including a screw rod, a screw nut, a plurality of balls, and a force sensor is provided. The screw nut has a cavity. The cavity is extended along a radial direction from an outer surface of the screw nut. The force sensor is disposed in the cavity of the screw nut, and the force sensor includes a stationary base and an elastic component. The stationary base includes a displacement restraint, and the elastic component includes a contact end and a fixed end. The displacement restraint is coupled to the cavity to prevent the stationary base from being displaced in the radial direction for fixing stationary base firmly in the cavity. The fixed end is connected to the stationary base, and the contact end contacts a bottom surface of the cavity in order to sense a force along the radial direction.

Abstract: A semiconductor power device and a manufacturing method thereof are provided. In the manufacturing method, before the self-aligned silicide process is performed, a gate stacked structure and a spacer are formed on a semiconductor layer having a body region and a source region. The spacer defines a portion of the source region for forming a silicide layer. Subsequently, the self-aligned silicide process is performed with the gate stacked structure and the spacer functioning as a mask to form the silicide layer at the defined portion of the source region. Thereafter, an interconnection structure including an interlayer dielectric layer and a source conductive layer is formed on the semiconductor layer. The source conductive layer is electrically connected to the source region. The silicide layer extends toward the gate stacked structure from a position under the source conductive layer to another position under the interlayer dielectric layer.

Abstract: Disclosed is a composition for preventing and treating a Mycoplasma hyorhinis infection in swine. The composition uses XylF, DnaK, P72, or a combination thereof as an active pharmaceutical ingredient. Further disclosed are an expression vector and a method for producing the active pharmaceutical ingredient of the composition using a prokaryotic expression system.

Abstract: Example implementations relate to computing devices with movable input/output (I/O) connectors. For example, a computing device may include a chassis of the computing device and an I/O connector to connect an I/O device to the computing device. The I/O connector may be movable about an axis relative to the chassis by at least 180 degrees such that the I/O connector is accessible from multiple sides of the chassis.

Abstract: An optical system includes a base, a first lens driving module, and a second lens driving module. The first lens driving module includes a first lens holder, a first magnet, and a first coil. The first lens holder is configured to hold a first optical element. The first coil corresponding to the first magnet is configured to drive the first lens holder to move relative to the base. The second lens driving module includes a second lens holder, a second magnet, and a second coil. The second lens holder is configured to hold a second optical element. The second coil corresponding to the second magnet is configured to drive the second lens holder to move relative to the base. The first magnet is disposed between the first and second lens holders, and no other magnet is disposed between the first and second lens holders except the first magnet.

Abstract: An electronic device including a display module, a circuit module and a housing is provided. The housing accommodates the display module and the circuit module and includes a transparent cover, a multi-layer stacked structure and a tinted layer. At least a part of the transparent cover presents a curve. The multi-layer stacked structure is disposed on an inner surface of the transparent cover and has a plurality of optical layers stacked in sequence. The tinted layer is disposed on the multi-layer stacked structure. Through the disposition of the multi-layer stacked structure, the housing has variable visual effects.

Abstract: An antenna assembly of reduced size but with optimized radiation and reception capabilities through slanted connections between the parts includes a feed portion, a first ground portion, a second ground portion, a first radiating portion, and a second radiating portion. The first radiating portion is a loop antenna on at least three surfaces of a carrier, and is connected between the feed portion and the first ground portion on opposite ends. The first radiating portion feeds in electric current through the feed portion. The second radiating portion is spaced from the first radiating portion, the second radiating portion is arranged on at least two surfaces of the carrier. The second radiating portion is connected between the second ground portion, the second radiating portion couples electric current from the first radiating portion. A wireless communication device employing the antenna assembly is also provided.

Abstract: The present disclosure provides a trench power semiconductor component and a method of manufacturing the same. The trench gate structure of the trench power semiconductor component includes a shielding electrode, a gate electrode disposed above the shielding electrode, and an inter-electrode dielectric layer. Before the formation of the inter-electrode dielectric layer, the step of forming the trench gate structure includes: forming a laminated structure covering the inner wall surface of the cell trench, in which the laminated structure includes a semiconductor material layer and an initial inner dielectric layer covering the semiconductor material layer; forming a heavily-doped semiconductor material in the lower part of the cell trench; and removing a portion of the initial inner dielectric layer located at an upper part of the cell trench to expose an upper half portion of the semiconductor material layer and a top portion of the heavily doped semiconductor material.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second side wall portion.

Abstract: A trench power semiconductor device and a manufacturing method thereof are provided. The trench power semiconductor device includes a substrate, an epitaxial layer disposed on the substrate, and a gate structure. The epitaxial layer has at least one trench formed therein, and the gate structure is disposed in the trench. A gate structure includes a lower doped region and an upper doped region disposed above the lower doped region to form a PN junction. The concentration of the impurity decreases along a direction from a peripheral portion of the upper doped region toward a central portion of the upper doped region.

Abstract: An optical lens assembly includes at least two lens elements and at least one light blocking sheet. Each of the lens elements includes a connecting structure for aligning the two lens elements. Each of the connecting structures includes a connecting surface and a circular conical surface, and a receiving space is formed between the two lens elements. A vertical distance between the receiving space and an optical axis is shorter than a vertical distance between each circular conical surface and the optical axis. The light blocking sheet is received in the receiving space and has a polygonal opening, and an outside diameter of the light blocking sheet is smaller than or equal to a minimum diameter of each circular conical surface.

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

Abstract: A driving mechanism includes a frame, a carrying base, and a drive module. The carrying base is disposed in the frame, and includes a carrying body, a first stop element and a second stop element. The carrying body is configured to carry an optical element. The first stop element is disposed on the carrying body, and configured to limit the range of motion of the carrying body in a first direction. The second stop element is disposed on the carrying body, and configured to limit the range of motion of the carrying body in the first direction. The driving module is disposed in the frame, and configured to move the carrying body relative to the frame. The first direction is parallel to the axis of the optical element, and the first stop element is closer to the top portion of the frame than the second stop element.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate and an image sensing element disposed within the substrate. The substrate has sidewalls defining a plurality of protrusions over the image sensing element. A first one of the plurality of protrusions including a first sidewall having a first segment. A line that extends along the first segment intersects a second sidewall of the first one of the plurality of protrusions that opposes the first sidewall.

Abstract: An exercising device includes a base, a rail, a swinging chair, and a swinging unit. The rail is pivotally disposed at the base by at least one pivoting point. The swinging chair is movably disposed on the rail. The swinging unit is disposed between the rail and the base. The swinging unit is for changing an angle between the rail and the base.

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Abstract: In some examples, a computing device includes a first display in a first housing and a second display in a second housing. The computing device may determine an angle between the first display device and the second display device, determine a first temperature map of the first housing based on the angle and first temperature data received from a first set of temperature sensors in the first housing, and determine a second temperature map of the second housing based on the angle and second temperature data received from a second set of temperature sensors in the second housing. The computing device may determine a temperature difference between the first display device and the second display device, determine an action, and perform the action to reduce the temperature, color, and/or color intensity difference between the first display device and the second display device.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.

Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.

Abstract: An antenna structure includes a metal housing, a switching circuit, and a first feed source. The metal housing includes a front frame, a backboard, and a side frame. The side frame defines a slot and the front frame defines a groove. A first portion of the front frame positioned at a first side of the groove forms a first branch. A second portion of the front frame extending from a second side of the groove to one end of the slot forms a second branch. The first feed source is electrically connected to the first branch and the second branch, and the first branch is grounded through the switching circuit.