Abstract: An optical lens assembly includes at least two lens elements and at least one light blocking sheet. Each of the lens elements includes a connecting structure for aligning the two lens elements. Each of the connecting structures includes a connecting surface and a circular conical surface, and a receiving space is formed between the two lens elements. A vertical distance between the receiving space and an optical axis is shorter than a vertical distance between each circular conical surface and the optical axis. The light blocking sheet is received in the receiving space and has a polygonal opening, and an outside diameter of the light blocking sheet is smaller than or equal to a minimum diameter of each circular conical surface.

Abstract: An antenna structure includes a metal housing, a first feed source, and a first radiator. The metal housing includes a front frame, a backboard, and a side frame. The side frame defines a slot and the front frame defines a gap. The metal housing is divided into at least a long portion and a short portion by the slot and the gap. The radiator is positioned in the housing and includes a first radiating portion and a second radiating portion. One end of the first radiating portion is electrically connected to the first feed source and another end of the first radiating portion is spaced apart from the long portion. One end of the second radiating portion is electrically connected to the first feed source and another end of the second radiating portion is spaced apart from the short portion.

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

Abstract: The present disclosure relates to a modular solar power generation apparatus comprising a base plate, a light guiding unit, a plurality of connection units and a plurality of solar panels wherein: the light guiding unit is installed on the base plate; all connection units are circlewise mounted on the base plate and encircling the light guiding unit; each the solar panel, which is connected to one of the connection units, and the base plate form an angle of inclination by which each the solar panel features upward broadened widths such that any two neighboring solar panels allow their corresponding edges to be adjacent to each other and a gap in between to be narrowed for development of solar panels easily installed and maintained.

Abstract: In some embodiments, the present disclosure relates to an image sensor device. The image sensor device includes an image sensing element disposed within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element. The plurality of protrusions respectively include a sidewall having a first segment oriented at a first angle and a second segment over the first segment. The second segment is oriented at a second angle that is larger than the first angle. One or more absorption enhancement layers are arranged over and between the plurality of protrusions. The first angle and the second angle are acute angles measured through the substrate with respect to a horizontal plane that is parallel to a second side of the substrate opposite the first side.

Abstract: The present disclosure provides a trench power semiconductor component and a method of manufacturing the same. The trench gate structure of the trench power semiconductor component includes a shielding electrode, a gate electrode disposed above the shielding electrode, and an inter-electrode dielectric layer. Before the formation of the inter-electrode dielectric layer, the step of forming the trench gate structure includes: forming a laminated structure covering the inner wall surface of the cell trench, in which the laminated structure includes a semiconductor material layer and an initial inner dielectric layer covering the semiconductor material layer; forming a heavily-doped semiconductor material in the lower part of the cell trench; and removing a portion of the initial inner dielectric layer located at an upper part of the cell trench to expose an upper half portion of the semiconductor material layer and a top portion of the heavily doped semiconductor material.

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

Abstract: A light blocking sheet having a central axis includes a central hole and a plurality of inner extended portions. The central axis passes through the central hole, which is enclosed by a hole inner surface. The hole inner surface has a first corresponding circle and a second corresponding circle, wherein a diameter of the first corresponding circle is greater than a diameter of the second corresponding circle. The inner extended portions are adjacent to and surround the central hole, wherein each of the inner extended portions is extended and tapered from the first corresponding circle towards the second corresponding circle and includes an inner surface, and the inner surface includes a line pair. The line pair includes two line sections, wherein one end of one line section thereof and one end of the other line section thereof are towards the second corresponding circle and approach to each other.

Abstract: A package structure may include a one-piece metal carrier, a die, a mold layer and a redistribution layer. The one-piece metal carrier may include a bottom portion and a first supporting structure, and the one-piece metal carrier may have a recess defined by the bottom portion and the first supporting structure. The die may be disposed in the recess of the one-piece metal carrier, and the die may have a plurality of conductive bumps. The mold layer may be formed to encapsulate the die. The mold layer may expose a portion of each of the plurality of conductive bumps and a portion of the first supporting structure. The redistribution layer may be disposed on the mold layer and electrically connected to the plurality of conductive bumps.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: An antenna structure includes a metallic member, a first radiator, and an isolating portion. The metallic member includes a front frame, a backboard, and a side frame. The side frame includes at least a top portion, a first side portion, and a second side portion. The isolating portion is electrically connected to the first radiator. The side frame defines a slot and the slot is defined on the top portion. The front frame defines a gap. The gap communicates with the slot and extends across the front frame. The first portion of the front frame from a first side of the gap to a first end of the slot forms a short portion. The first radiator is positioned adjacent to the short portion and the isolation portion improves isolation between the short portion and the first radiator.

Abstract: A resistance device applied to relative rotations between a flywheel and an axis includes an inner stator, an outer rotor, a conductive wire and a magneto-rheological fluid. The inner stator is fixedly joined with the axis and includes an accommodating space surrounding the axis at a position away from the axis. The outer rotor, fixedly joined with the flywheel, encloses and rotates relative to the inner stator. An accommodating gap is formed between the outer rotor and the inner stator at a position away from the axis. The conductive wire is wound in the accommodating space, and generates a magnetic line passing the accommodating gap when applied by an electric current. The magneto-rheological fluid is filled in the accommodating gap. Thus, the outer rotor is disposed at the outer most region of the resistance device to increase the braking torque, and the magneto-rheological fluid is away from the axis to increase the braking moment.

Abstract: A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.

Abstract: An electromagnetically actuated bicycle trainer includes a base, a support assembly disposed on the base, and a hysteresis resistance generating module. The support assembly includes a support arm, and a fastening member disposed on the support arm and for securing an axle of a pedaling wheel. The hysteresis resistance generating module includes an inner magnetic stationary member and an outer magnetic stationary member, a semi-hard magnetic rotating member between the inner magnetic stationary member and the outer magnetic stationary member, and a conductive coil. The conductive coil receives an electric power and senses opposite magnetisms that the inner magnetic stationary member and the outer magnetic stationary member generate. Thus, the semi-hard magnetic rotating member is caused to generate a hysteresis resistance when rotated in response to hysteresis effects.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: A method for manufacturing a semiconductor device includes the following steps. An epitaxial layer is formed on a substrate. Then, a body is formed in an upper portion of the epitaxial layer. A first dielectric layer, a second dielectric layer, and a third dielectric layer are sequentially formed on the epitaxial layer. The third dielectric layer forms a second trench, and the second trench is located in the first trench. A shield layer is formed in the second trench. The upper portion of the third dielectric layer is removed, such that the upper portion of the shield layer protrudes from the third dielectric layer. A fourth dielectric layer is formed to cover the upper portion of the shield layer. A gate is formed on the third dielectric layer. A source is formed in the epitaxial layer surrounding the gate.

Abstract: A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an epitaxial layer and forming a trench gate structure in a trench formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate disposed on the shielding electrode and an inter-electrode dielectric layer disposed therebetween. The step of forming the trench gate structure includes forming an insulating layer covering an inner surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacing layer, the spacing layer including a first sidewall portion and a second sidewall portion, both of which include bottom end portions spaced apart from each other and extending portions protruding from the protective layer.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second side wall portion.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.

Abstract: A driving mechanism is provided, including a case, a holder and a driving module. The holder is disposed in the case for holding an optical member. The driving module is disposed in the case for driving the holder. The case is substantially quadrilateral and includes a first side and a second side. The driving module includes a first magnetic driving component winding on a periphery of the holder. The first magnetic driving component includes a first segment and a second segment that are respectively substantially parallel to the first side and the second side. The distance between the first segment and the first side is different from the distance between the second segment and the second side.