Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: An antenna structure includes a metallic member, a first radiator, and an isolating portion. The metallic member includes a front frame, a backboard, and a side frame. The side frame includes at least a top portion, a first side portion, and a second side portion. The isolating portion is electrically connected to the first radiator. The side frame defines a slot and the slot is defined on the top portion. The front frame defines a gap. The gap communicates with the slot and extends across the front frame. The first portion of the front frame from a first side of the gap to a first end of the slot forms a short portion. The first radiator is positioned adjacent to the short portion and the isolation portion improves isolation between the short portion and the first radiator.

Abstract: A resistance device applied to relative rotations between a flywheel and an axis includes an inner stator, an outer rotor, a conductive wire and a magneto-rheological fluid. The inner stator is fixedly joined with the axis and includes an accommodating space surrounding the axis at a position away from the axis. The outer rotor, fixedly joined with the flywheel, encloses and rotates relative to the inner stator. An accommodating gap is formed between the outer rotor and the inner stator at a position away from the axis. The conductive wire is wound in the accommodating space, and generates a magnetic line passing the accommodating gap when applied by an electric current. The magneto-rheological fluid is filled in the accommodating gap. Thus, the outer rotor is disposed at the outer most region of the resistance device to increase the braking torque, and the magneto-rheological fluid is away from the axis to increase the braking moment.

Abstract: A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.

Abstract: An electromagnetically actuated bicycle trainer includes a base, a support assembly disposed on the base, and a hysteresis resistance generating module. The support assembly includes a support arm, and a fastening member disposed on the support arm and for securing an axle of a pedaling wheel. The hysteresis resistance generating module includes an inner magnetic stationary member and an outer magnetic stationary member, a semi-hard magnetic rotating member between the inner magnetic stationary member and the outer magnetic stationary member, and a conductive coil. The conductive coil receives an electric power and senses opposite magnetisms that the inner magnetic stationary member and the outer magnetic stationary member generate. Thus, the semi-hard magnetic rotating member is caused to generate a hysteresis resistance when rotated in response to hysteresis effects.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: A method for manufacturing a semiconductor device includes the following steps. An epitaxial layer is formed on a substrate. Then, a body is formed in an upper portion of the epitaxial layer. A first dielectric layer, a second dielectric layer, and a third dielectric layer are sequentially formed on the epitaxial layer. The third dielectric layer forms a second trench, and the second trench is located in the first trench. A shield layer is formed in the second trench. The upper portion of the third dielectric layer is removed, such that the upper portion of the shield layer protrudes from the third dielectric layer. A fourth dielectric layer is formed to cover the upper portion of the shield layer. A gate is formed on the third dielectric layer. A source is formed in the epitaxial layer surrounding the gate.

Abstract: A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an epitaxial layer and forming a trench gate structure in a trench formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate disposed on the shielding electrode and an inter-electrode dielectric layer disposed therebetween. The step of forming the trench gate structure includes forming an insulating layer covering an inner surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacing layer, the spacing layer including a first sidewall portion and a second sidewall portion, both of which include bottom end portions spaced apart from each other and extending portions protruding from the protective layer.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second side wall portion.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.

Abstract: A driving mechanism is provided, including a case, a holder and a driving module. The holder is disposed in the case for holding an optical member. The driving module is disposed in the case for driving the holder. The case is substantially quadrilateral and includes a first side and a second side. The driving module includes a first magnetic driving component winding on a periphery of the holder. The first magnetic driving component includes a first segment and a second segment that are respectively substantially parallel to the first side and the second side. The distance between the first segment and the first side is different from the distance between the second segment and the second side.

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

Abstract: In some embodiments, the present disclosure relates to a method of forming an absorption enhancement structure for an integrated chip image sensor that reduces crystalline defects resulting from the formation of the absorption enhancement structure. The method may be performed by forming a patterned masking layer over a first side of a substrate. A dry etching process is performed on the first side of the substrate according to the patterned masking layer to define a plurality of intermediate protrusions arranged along the first side of the substrate within a periodic pattern. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions. One or more absorption enhancement layers are formed over and between the plurality of protrusions. The wet etching process removes a damaged region of the intermediate protrusions that can negatively impact performance of the absorption enhancement structure.

Abstract: A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.

Abstract: Disclosures of the present invention describe a method of treatment of preventing hyperglycemia complications using at least one pharmaceutical made from a red mold product, wherein the red mold product is a red mold rice or a red mold Dioscorea, and the pharmaceutical is an extract obtained from the red mold product. Particularly, the extract can be Monascin, Ankaflavin, or a combination of Monascin and Ankaflavin. Moreover, a variety of experiment data have proved that the extract indeed exhibits a prevention effect in hyperglycemia complications comprising non-alcoholic liver damage and kidney failure.

Abstract: Disclosures of the present invention describe a method of treatment of preventing hyperglycemia complications using at least one pharmaceutical made from a red mold product, wherein the red mold product is a red mold rice or a red mold Dioscorea, and the pharmaceutical is an extract obtained from the red mold product. Particularly, the extract can be Monascin, Ankaflavin, or a combination of Monascin and Ankaflavin. Moreover, a variety of experiment data have proved that the extract indeed exhibits a prevention effect in hyperglycemia complications comprising non-alcoholic liver damage and kidney failure.

Abstract: A driving mechanism for moving an optical element is provided, including a housing, a frame, a holder, and a driving assembly. The frame is fixed to the housing and forms a depressed surface adjacent to the housing. Specifically, the depressed surface faces the housing and is not in contact with the housing. The holder is movably disposed in the housing for holding the optical element. The drive assembly is disposed in the housing to drive the holder and the optical element to move relative to the frame.

Abstract: A driving mechanism is provided, including a housing, a hollow frame, a holder, and a driving assembly. The frame is fixed to the housing and has a stop surface. The holder is movably disposed in the housing for holding the optical element. The driving assembly is disposed in the housing to drive the holder and the optical element moving along the optical axis of the optical element relative to the frame. Specifically, the stop surface is parallel to the optical axis to contact the holder and restrict the holder in a limit position.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.