Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

Abstract: In some embodiments, the present disclosure relates to a method of forming an absorption enhancement structure for an integrated chip image sensor that reduces crystalline defects resulting from the formation of the absorption enhancement structure. The method may be performed by forming a patterned masking layer over a first side of a substrate. A dry etching process is performed on the first side of the substrate according to the patterned masking layer to define a plurality of intermediate protrusions arranged along the first side of the substrate within a periodic pattern. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions. One or more absorption enhancement layers are formed over and between the plurality of protrusions. The wet etching process removes a damaged region of the intermediate protrusions that can negatively impact performance of the absorption enhancement structure.

Abstract: A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.

Abstract: Disclosures of the present invention describe a method of treatment of preventing hyperglycemia complications using at least one pharmaceutical made from a red mold product, wherein the red mold product is a red mold rice or a red mold Dioscorea, and the pharmaceutical is an extract obtained from the red mold product. Particularly, the extract can be Monascin, Ankaflavin, or a combination of Monascin and Ankaflavin. Moreover, a variety of experiment data have proved that the extract indeed exhibits a prevention effect in hyperglycemia complications comprising non-alcoholic liver damage and kidney failure.

Abstract: Disclosures of the present invention describe a method of treatment of preventing hyperglycemia complications using at least one pharmaceutical made from a red mold product, wherein the red mold product is a red mold rice or a red mold Dioscorea, and the pharmaceutical is an extract obtained from the red mold product. Particularly, the extract can be Monascin, Ankaflavin, or a combination of Monascin and Ankaflavin. Moreover, a variety of experiment data have proved that the extract indeed exhibits a prevention effect in hyperglycemia complications comprising non-alcoholic liver damage and kidney failure.

Abstract: In some embodiments, the present disclosure relates to a method of forming an absorption enhancement structure for an integrated chip image sensor that reduces crystalline defects resulting from the formation of the absorption enhancement structure. The method may be performed by forming a patterned masking layer over a first side of a substrate. A dry etching process is performed on the first side of the substrate according to the patterned masking layer to define a plurality of intermediate protrusions arranged along the first side of the substrate within a periodic pattern. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions. One or more absorption enhancement layers are formed over and between the plurality of protrusions. The wet etching process removes a damaged region of the intermediate protrusions that can negatively impact performance of the absorption enhancement structure.

Abstract: A driving mechanism is provided, including a housing, a hollow frame, a holder, and a driving assembly. The frame is fixed to the housing and has a stop surface. The holder is movably disposed in the housing for holding the optical element. The driving assembly is disposed in the housing to drive the holder and the optical element moving along the optical axis of the optical element relative to the frame. Specifically, the stop surface is parallel to the optical axis to contact the holder and restrict the holder in a limit position.

Abstract: A driving mechanism for moving an optical element is provided, including a housing, a frame, a holder, and a driving assembly. The frame is fixed to the housing and forms a depressed surface adjacent to the housing. Specifically, the depressed surface faces the housing and is not in contact with the housing. The holder is movably disposed in the housing for holding the optical element. The drive assembly is disposed in the housing to drive the holder and the optical element to move relative to the frame.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.

Abstract: A driving mechanism for supporting an optical member is provided, including a base, a frame, a movable portion, a driving module, and an adhesive member. The base includes a plurality of first sidewalls, and at least one recess is formed on the first sidewalls. The frame includes a plurality of second sidewalls, and at least one opening is formed on the second sidewalls. The base and the frame form a hollow box, and the opening corresponds to the recess. The movable portion and the driving module are disposed in the hollow box. The driving module can drive the movable portion to move relative to the base. The adhesive member is accommodated in the opening and the recess, and extended along the first sidewalls. The adhesive member is disposed between the first sidewalls and the second sidewalls.

Abstract: A driving mechanism includes a frame, a carrying base, and a drive module. The carrying base is disposed in the frame, and includes a carrying body, a first stop element and a second stop element. The carrying body is configured to carry an optical element. The first stop element is disposed on the carrying body, and configured to limit the range of motion of the carrying body in a first direction. The second stop element is disposed on the carrying body, and configured to limit the range of motion of the carrying body in the first direction. The driving module is disposed in the frame, and configured to move the carrying body relative to the frame. The first direction is parallel to the axis of the optical element, and the first stop element is closer to the top portion of the frame than the second stop element.

Abstract: An optical lens assembly includes at least two lens elements and at least one light blocking sheet. Each of the lens elements includes a connecting structure for aligning the two lens elements. Each of the connecting structures includes a connecting surface and a circular conical surface, and a receiving space is formed between the two lens elements. A vertical distance between the receiving space and an optical axis is shorter than a vertical distance between each circular conical surface and the optical axis. The light blocking sheet is received in the receiving space and has a polygonal opening, and an outside diameter of the light blocking sheet is smaller than or equal to a minimum diameter of each circular conical surface.

Abstract: A semi-aqueous wet clean system and method for removing carbon-containing silicon material (e.g., plasma residue) or nitrogen-containing silicon material (e.g., plasma residue) includes a hydroxyl-terminated organic compound, a diol, and a fluoride ion donor material. The system is configured to protect silicon oxide and amorphous silicon during a post-dry-etch wet clean. The wet clean system is configured to selectively remove carbon-containing or nitrogen-containing plasma residue. pH of the wet clean system can be modified to tune selectivity for removal of carbon-containing or nitrogen-containing plasma residues. As a result, positive TEOS recession of less than about 3 nanometers may be achieved. Additionally, the wet clean system can be adapted for reclamation and subsequent reuse.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: A video data transmission method which is able to transmit compressed video data along with uncompressed video data determines whether any compressed data needs to be transmitted when transmitting uncompressed video data. When the compressed data needs to be transmitted, all pixels in each frame of the uncompressed video data are analyzed and one color which is dominant according to the number of pixels receiving it is obtained. The compressed data is inserted into the data for the relevant large number of pixels and the video data is transmitted to a receiving device after insertion of the compressed data.

Abstract: A package structure may include a one-piece metal carrier, a die, a mold layer and a redistribution layer. The one-piece metal carrier may include a bottom portion and a first supporting structure, and the one-piece metal carrier may have a recess defined by the bottom portion and the first supporting structure. The die may be disposed in the recess of the one-piece metal carrier, and the die may have a plurality of conductive bumps. The mold layer may be formed to encapsulate the die. The mold layer may expose a portion of each of the plurality of conductive bumps and a portion of the first supporting structure. The redistribution layer may be disposed on the mold layer and electrically connected to the plurality of conductive bumps.

Abstract: The present invention provides a liquid crystal display (LCD) panel. The LCD panel comprises: an electrode layer. The electrode layer comprises: a plurality of pixels, each pixel comprising a plurality of types of sub-pixels, each type of sub-pixel having a ladder pattern with a plurality of sectors, wherein each sector comprises a plurality of units and each sector is shifted a unit width with each other.

Abstract: A television set is connected to a sensor and a height adjusting apparatus. The sensor detects location information of a user, a watching mode of the user, a visual angle of the user and a neck deviation angle of the user, by using the sensor when the television set is turned on. The television set calculates a proper height for the user under different watching modes, according to the location information of the user, the watching mode of the user, and the visual angle and the neck deviation angle of the user. The television set further controls the height adjusting apparatus to adjust the visual height of the television set according to the calculated proper height of the television. A method for automatically adjusting the visual height of the television set is also provided.

Abstract: The disclosure discloses an electromagnetic driving module which includes a base, two magnetic elements, a wiring assembly, a reference element, and a sensor element. The two magnetic elements are arranged along a reference line and positioned at two sides of the base. The wiring assembly is connected to the base and arranged adjacent to the two magnetic elements. The reference element is positioned on the base. The sensor element is adjacent to the reference elements and configured to detect the movement of the reference element to position the base. A lens device using the electromagnetic driving module is also disclosed.