Abstract: A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.

Abstract: A television set is connected to a sensor and a height adjusting apparatus. The sensor detects location information of a user, a watching mode of the user, a visual angle of the user and a neck deviation angle of the user, by using the sensor when the television set is turned on. The television set calculates a proper height for the user under different watching modes, according to the location information of the user, the watching mode of the user, and the visual angle and the neck deviation angle of the user. The television set further controls the height adjusting apparatus to adjust the visual height of the television set according to the calculated proper height of the television. A method for automatically adjusting the visual height of the television set is also provided.

Abstract: A manufacturing method of ultra-thin semiconductor device package structure is provided. Firstly, a wafer including a plurality of semiconductor devices is provided, and one of the semiconductor devices has an active surface having an active region and an outer region and a back surface. A first electrode and a second electrode are arranged in the active region, and the outer region has a cutting portion and a channel portion. Subsequently, a trench is formed in the channel portion, and filled with a conductive structure. The wafer is fixed on a supporting board, and then a thinning process and a deposition process of a back electrode layer are performed on the back surface in sequence. Thereafter, the supporting board is removed and a plurality of contacting pads is formed. A cutting process is performed along the cutting portion.

Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.

Abstract: Disclosed herein are an electronic device and a control method thereof. The electronic device includes a touch device and a processor. The processor is electrically connected to the touch device. When at least one continuous back-and-forth moving touch trace is formed on the touch device during a predetermined period, the processor switches one of a plurality of modes of the electronic device to another.

Abstract: A wearable audio-visual device includes a casing structure, a first image generating unit, a second image generating unit, and two earphone structures. The casing structure includes a main casing and two lateral casings. The first image generating unit includes a first exposed portion exposed from the main casing. The first exposed portion has a first viewing area, and a first eye image light source generated by the first image generating unit passes through the first viewing area and then is projected onto a first eye. The second image generating unit includes a second exposed portion exposed from the main casing. The second exposed portion has a second viewing area, and a second eye image light source generated by the second image generating unit passes through the second viewing area and then is projected onto a second eye. The two earphone structures respectively disposed on the two lateral casings.

Abstract: A modularized information playback device includes a casing module, a control circuit module, a microprojector module, a speaker module, an audio frequency receiving module, and a wireless transmission module. The casing module includes a first network structure, an image projection opening, and an audio frequency receiving opening. The control circuit module is disposed inside the casing module. The microprojector module is disposed inside the casing module, and the microprojector module includes a projection lens assembly partially exposed from the image projection opening. The speaker module is disposed inside the casing module, and the speaker module is adjacent to the first network structure. The audio frequency receiving module is disposed inside the casing module, and the audio frequency receiving module is adjacent to the audio frequency receiving opening. The wireless transmission module is disposed inside the casing module.

Abstract: A method for manufacturing a MEMS device includes the following operations. An SOI wafer including a device layer, an insulating layer and a handle layer is provided. The device layer is etched to form a recess and an annular protrusion surrounding the recess. A moving part and a spring of the MEMS device are formed on the recess by etching the device layer, the insulating layer and the handle layer. An anchor of the MEMS device is formed at the annular protrusion by etching the device layer, the insulating layer and the handle layer. The moving part and the anchor are connected to each other by the spring. The insulating layer is disposed between a first conductive portion and a second conductive portion of the moving part. The insulating layer is disposed between a first conductive portion and a second conductive portion of the anchor.

Abstract: A trench power MOSFET and a manufacturing method thereof are provided. The gate of the trench power MOSFET includes an upper doped region, a lower doped region and a middle region interposed therebetween. The upper has a conductive type reverse to that of the lower doped region, and the middle region is an intrinsic or lightly-doped region to form a PIN, P+/N? or N+/P? junction. As such, when the trench power MOSFET is in operation, a junction capacitance formed at the PIN, P+/N? or N+/P? junction is in series with the parasitic capacitance. Accordingly, the gate-to-drain effective capacitance may be reduced.

Abstract: A shock absorbing and pressure releasing damper apparatus for footwear includes: an upper board having upper mounting portions on a bottom thereof; a lower board arranged at the bottom of the upper board and having lower mounting portions corresponding to the upper mounting portions of the upper board on a top thereof; a middle cushion member disposed between the upper and lower board and including slits; elastic members arranged between the upper mounting portions and the lower mounting portions; magnetic members arranged inside the upper and lower mounting portions of the upper and lower boards and at centers of the elastic members.

Abstract: A current block layer structure applied to a light emitting diode is provided. The LED includes a reflecting layer, an N-type electrode, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a transparent conductive layer and a P-type electrode. A current block reflecting layer is disposed the transparent conductive layer at a region corresponding to the P-type electrode and an end close to the light emitting layer. The current block reflecting layer includes a Bragg reflector (DBR) structure, which allows the current block reflecting layer to reflect an excited light from the light emitting layer. Thus, the excited light emitted towards the P-type electrode is provided with a higher reflection rate and is again reflected by the reflecting layer. The excited light takes exit via regions without the N-type electrode and the P-type electrode after several reflections, thereby enhancing light extraction efficiency of the LED.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract: An electric pencil sharpener includes a cutter carrier, and first and second cutter members mounted on the cutter carrier and having long and short blade portions. The rear end of the short blade portion is disposed forwardly of the rear end of the long blade portion. A shaving space includes a rear region disposed between the rear ends of the long and short blade portions. The rear region allows extension of a tip portion of a pencil thereinto for pushing a switch actuation unit so as to deactivate a motor when the tip portion of the pencil has been sharpened to extend a predetermined length into the rear region.

Abstract: A trench power MOSFET and a manufacturing method thereof are provided. The gate of the trench power MOSFET includes an upper doped region and a lower doped region which have different types of doping to form a PN junction. As such, when the trench power MOSFET is in operation, a junction capacitance formed at the PN junction is in series with the intrinsic gate-to-drain capacitance. Accordingly, the effective capacitance between the gate and the drain may be reduced.

Abstract: A photographing lens system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with negative refractive power has a concave image-side surface. The second lens element has refractive power. The third lens element with positive refractive power has a convex object-side surface and a convex image-side surface. The fourth lens element with negative refractive power has a concave image-side surface, wherein an object-side surface and the image-side surface of the fourth lens element are aspheric. The fifth lens element with positive refractive power has a convex object-side surface and a convex image-side surface, wherein the object-side surface and the image-side surface of the fifth lens element are aspheric.

Abstract: The invention provides a MEMS device. The MEMS device includes: a substrate; a proof mass, including at least two slots, each of the slots including an inner space and an opening, the inner space being relatively closer to a center area of the proof mass than the opening; at least two anchors located in the corresponding slots and connected to the substrate; at least two linkages located in the corresponding slots and connected to the corresponding anchors; and a multi-dimensional spring structure for assisting a multi-dimensional movement of the proof mass, the multi-dimensional spring structure surrounding a periphery of the proof mass, and connected to the substrate through the linkages and the anchors. The multi-dimensional spring structure includes first and second springs for assisting an out-of-plane movement and an in-plane movement of the proof mass.

Abstract: A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.

Abstract: A manufacturing method of wafer level chip scale package structure is provided. Firstly, a wafer including a plurality of semiconductor devices is provided. An active surface of one of the semiconductor devices has an active an active region and an outer region. A first electrode and a second electrode are arranged on the active region, and the outer region has a cutting portion and a channel portion. Next, a patterned protecting layer having a plurality of openings is formed on the active surface to respectively expose the first and second electrodes and channel portion. Subsequently, a wafer back thinning process is performed and then a back electrode layer is deposited. Subsequently, the channel portion is etched to form a trench exposing the back electrode layer, and a conductive structure connected to the back electrode layer is formed through the trench. Thereafter, the wafer is cut along the cutting portion.

Abstract: A photographing lens system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with negative refractive power has a concave image-side surface. The second lens element has refractive power. The third lens element with positive refractive power has a convex object-side surface and a convex image-side surface. The fourth lens element with negative refractive power has a concave image-side surface, wherein an object-side surface and the image-side surface of the fourth lens element are aspheric. The fifth lens element with positive refractive power has a convex object-side surface and a convex image-side surface, wherein the object-side surface and the image-side surface of the fifth lens element are aspheric.

Abstract: A wireless inductive display clock includes a wireless inductive receiver module, a control circuit module, and a display unit. The wireless inductive receiver module can be, for example, an NFC module. The control circuit module is electrically connected to the wireless inductive receiver module for receiving an information signal from the wireless inductive receiver module and converting it into an information display signal, for example, time display signal. The display unit is, for example, a LCD electrically connected to the control circuit module for receiving the information display signal and drivable by the control circuit module to display the information.