Abstract: The present invention provides a novel pure substance extracting method. Differing from conventional pure substance extracting method utilizing chromatography technique to treat a red mold product with an extracting and purifying process by using a plurality of organic extracting solution, the present invention merely utilizes water and ethanol solution to extract the pure substances of Monascin and Ankaflavin from the red mold product. Based on experimental results, the precipitate of the substances obtained through this novel extracting method is able to contain high extraction ratio of Monascin (˜97.35%) and Ankaflavin (˜95.16%). Moreover, experimental results also prove that the novel pure substance extracting method includes the advantages of high extraction speed, high extraction efficiency, high extraction percentage, and using single organic solution.

Abstract: A chip package structure and the manufacturing method thereof are provided. Firstly, a conductive frame including a bottom plate and a plurality of partition plates is provided. The bottom plate has a supporting surface and a bottom surface opposite thereto, and the partition plates protrude from the supporting surface to define a plurality of the accommodating regions. Subsequently, a plurality of chips is provided, and each of the chips is correspondingly accommodated in each of the accommodating regions with a back surface facing to the supporting surface. Thereafter, the conductive frame is cut to form a plurality of separated chip package structures.

Abstract: A transparent conductive layer structure for an LED is provided. The LED includes a reflecting layer, an N-type electrode, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current block layer, a transparent conductive layer and a P-type electrode that are stacked on a substrate. The current block layer is disposed between and separates the P-type electrode and the P-type semiconductor layer. The transparent conductive layer is disposed between the P-type electrode and the current block layer, and connects to the P-type electrode and the P-type semiconductor layer. At a region corresponding to the P-type electrode, a plurality of holes are disposed at the transparent conductive layer to reduce an area of and hence an amount of light absorbed by the transparent conductive layer, thereby increasing light extraction efficiency of excited light from the light emitting layer and enhancing light emitting efficiency of the LED.

Abstract: An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.

Abstract: The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.

Abstract: An optical lens system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element and a fourth lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof. The second lens element has negative refractive power. The third lens element with positive refractive power has an image-side surface being convex in a paraxial region thereof, wherein both of the surfaces thereof are aspheric. The fourth lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface of the fourth lens element has at least one convex shape in an off-axis region thereof, and both of the surfaces thereof are aspheric. The optical lens system has a total of four lens elements with refractive power.

Abstract: A bicycle trainer is adapted to be arranged with a bicycle to simulate riding a bicycle on an outdoor road. The bicycle includes a stand, a roller, a first resistance source and a second resistance source. The stand is adapted to support the bicycle. The roller is pivoted to the stand and is adapted to contact a bicycle wheel of the bicycle. The first resistance source is coupled to the roller and provides resistance to the bicycle wheel via the roller. The second resistance source is coupled to the roller and provides resistance to the bicycle wheel via the roller.

Abstract: An exercising device includes a base, a rail, a swinging chair, and a swinging unit. The rail is pivotally disposed at the base by at least one pivoting point. The swinging chair is movably disposed on the rail. The swinging unit is disposed between the rail and the base. The swinging unit is for changing an angle between the rail and the base.

Abstract: A single-pole multi-throw switch includes a set of selection switches. The set of selection switches includes a set of primary switches, a first set and a second set of secondary switches. The primary set of switches includes a plurality of primary transistors coupled in series for transmitting radio frequency signals. The first set of secondary switches is coupled to the primary set of switches and includes a plurality of first secondary transistors coupled in series for transmitting the radio frequency signals when the primary transistors and the first secondary transistors are turned on. The second set of secondary switches is coupled to the primary set of switches and includes a plurality of second secondary transistors coupled in series for transmitting the radio frequency signals when the primary transistors and the second secondary transistors are turned on.

Abstract: A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.

Abstract: A television set is connected to a sensor and a height adjusting apparatus. The sensor detects location information of a user, a watching mode of the user, a visual angle of the user and a neck deviation angle of the user, by using the sensor when the television set is turned on. The television set calculates a proper height for the user under different watching modes, according to the location information of the user, the watching mode of the user, and the visual angle and the neck deviation angle of the user. The television set further controls the height adjusting apparatus to adjust the visual height of the television set according to the calculated proper height of the television. A method for automatically adjusting the visual height of the television set is also provided.

Abstract: A manufacturing method of ultra-thin semiconductor device package structure is provided. Firstly, a wafer including a plurality of semiconductor devices is provided, and one of the semiconductor devices has an active surface having an active region and an outer region and a back surface. A first electrode and a second electrode are arranged in the active region, and the outer region has a cutting portion and a channel portion. Subsequently, a trench is formed in the channel portion, and filled with a conductive structure. The wafer is fixed on a supporting board, and then a thinning process and a deposition process of a back electrode layer are performed on the back surface in sequence. Thereafter, the supporting board is removed and a plurality of contacting pads is formed. A cutting process is performed along the cutting portion.

Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.

Abstract: Disclosed herein are an electronic device and a control method thereof. The electronic device includes a touch device and a processor. The processor is electrically connected to the touch device. When at least one continuous back-and-forth moving touch trace is formed on the touch device during a predetermined period, the processor switches one of a plurality of modes of the electronic device to another.

Abstract: A modularized information playback device includes a casing module, a control circuit module, a microprojector module, a speaker module, an audio frequency receiving module, and a wireless transmission module. The casing module includes a first network structure, an image projection opening, and an audio frequency receiving opening. The control circuit module is disposed inside the casing module. The microprojector module is disposed inside the casing module, and the microprojector module includes a projection lens assembly partially exposed from the image projection opening. The speaker module is disposed inside the casing module, and the speaker module is adjacent to the first network structure. The audio frequency receiving module is disposed inside the casing module, and the audio frequency receiving module is adjacent to the audio frequency receiving opening. The wireless transmission module is disposed inside the casing module.

Abstract: A wearable audio-visual device includes a casing structure, a first image generating unit, a second image generating unit, and two earphone structures. The casing structure includes a main casing and two lateral casings. The first image generating unit includes a first exposed portion exposed from the main casing. The first exposed portion has a first viewing area, and a first eye image light source generated by the first image generating unit passes through the first viewing area and then is projected onto a first eye. The second image generating unit includes a second exposed portion exposed from the main casing. The second exposed portion has a second viewing area, and a second eye image light source generated by the second image generating unit passes through the second viewing area and then is projected onto a second eye. The two earphone structures respectively disposed on the two lateral casings.

Abstract: A method for manufacturing a MEMS device includes the following operations. An SOI wafer including a device layer, an insulating layer and a handle layer is provided. The device layer is etched to form a recess and an annular protrusion surrounding the recess. A moving part and a spring of the MEMS device are formed on the recess by etching the device layer, the insulating layer and the handle layer. An anchor of the MEMS device is formed at the annular protrusion by etching the device layer, the insulating layer and the handle layer. The moving part and the anchor are connected to each other by the spring. The insulating layer is disposed between a first conductive portion and a second conductive portion of the moving part. The insulating layer is disposed between a first conductive portion and a second conductive portion of the anchor.

Abstract: A trench power MOSFET and a manufacturing method thereof are provided. The gate of the trench power MOSFET includes an upper doped region, a lower doped region and a middle region interposed therebetween. The upper has a conductive type reverse to that of the lower doped region, and the middle region is an intrinsic or lightly-doped region to form a PIN, P+/N? or N+/P? junction. As such, when the trench power MOSFET is in operation, a junction capacitance formed at the PIN, P+/N? or N+/P? junction is in series with the parasitic capacitance. Accordingly, the gate-to-drain effective capacitance may be reduced.

Abstract: A shock absorbing and pressure releasing damper apparatus for footwear includes: an upper board having upper mounting portions on a bottom thereof; a lower board arranged at the bottom of the upper board and having lower mounting portions corresponding to the upper mounting portions of the upper board on a top thereof; a middle cushion member disposed between the upper and lower board and including slits; elastic members arranged between the upper mounting portions and the lower mounting portions; magnetic members arranged inside the upper and lower mounting portions of the upper and lower boards and at centers of the elastic members.

Abstract: A current block layer structure applied to a light emitting diode is provided. The LED includes a reflecting layer, an N-type electrode, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a transparent conductive layer and a P-type electrode. A current block reflecting layer is disposed the transparent conductive layer at a region corresponding to the P-type electrode and an end close to the light emitting layer. The current block reflecting layer includes a Bragg reflector (DBR) structure, which allows the current block reflecting layer to reflect an excited light from the light emitting layer. Thus, the excited light emitted towards the P-type electrode is provided with a higher reflection rate and is again reflected by the reflecting layer. The excited light takes exit via regions without the N-type electrode and the P-type electrode after several reflections, thereby enhancing light extraction efficiency of the LED.