Abstract: An erasing method adapted for a semiconductor memory device is provided. The erasing method includes executing a pre-program process on the semiconductor memory device, executing an erase process on the semiconductor memory device, executing an over-erase verification process on a plurality of memory cells of the semiconductor memory device, detecting a total current consumption of the plurality of memory cells, determining the number of the memory cells to be executed with a soft program process according to the total current consumption, and executing the soft program process on the memory cells based on the number of the memory cells.

Abstract: A semiconductor device includes a substrate, a first dielectric layer on the substrate, a hard mask layer on the first dielectric layer, a trench in the hard mask layer and the first dielectric layer, a first source/drain electrode layer on a sidewall of the trench, a second dielectric layer on the first source/drain electrode layer in the trench, a second source/drain electrode layer on the second dielectric layer in the trench, a third dielectric layer on the second source/drain electrode layer in the trench, an ILD layer overlying the trench, an nFET disposed over the trench, and a pFET disposed over the trench and spaced apart from the nFET.

Abstract: An integrated driving module with energy conversion function includes a patterned conductive circuit layer, an integrated electromagnetic induction component layer, a second dielectric layer, an embedded electrical component and a conductive component. The integrated electromagnetic induction component layer, which has a plurality of conductive coil layer, a plurality of conductive connecting component and a first dielectric layer, is disposed on the patterned conductive circuit layer. The conductive coil layers are stacked. Each conductive connecting component is electrically connected between the two conductive coil layers and between the corresponding conductive coil layer and the patterned conductive circuit layer. The first dielectric layer covers the conductive coil layers and the conductive connecting components. The second dielectric layer covers the patterned conductive circuit layer.

Abstract: Methods for treating a wound or promote wound healing are provided, comprising the step of administering a composition including an effective amount of ?-1 adrenergic receptor antagonist to a subject in need thereof. Also provided is apparatus for wound healing, comprising a dressing and a composition including an effective amount of ?-1 adrenergic receptor antagonist.

Abstract: A lens assembly driving module includes a base, a cover, a lens carrier and a damping agent. The cover is coupled to the base. The lens carrier is integrally formed with a plastic barrel into a coaxial unitary element which has an internal space for receiving at least one optical lens element and includes at least two protrusion portions located on one end of the coaxial unitary element close to the base. The damping agent is filled between the base and each of the protrusion portions. The protrusion portions are a part of the coaxial unitary element, and a distance in a direction perpendicular to an optical axis between the part of the coaxial unitary element and the internal space is a maximum distance among distances in the direction perpendicular to the optical axis between other parts of the coaxial unitary element and the internal space.

Abstract: A wiring structure includes an upper conductive structure, a lower conductive structure, an adhesion layer and at least one outer via. The upper conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The lower conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The adhesion layer is interposed between the upper conductive structure and the lower conductive structure to bond the upper conductive structure and the lower conductive structure together.

Abstract: An indicator device is suitable for a mixed reality device. The indicator device includes a body, a light source unit, at least two positioning elements, a triggering unit and a control unit. The light source unit is disposed on the body and generates a light source. The two elements are disposed separately on the body, wherein the light source unit and the positioning elements are disposed on different axes. The triggering unit is disposed on the body and generates a trigger signal. The control unit is disposed inside the body and is connected to the light source unit and the triggering unit. The control unit receives the trigger signal to generate a first control signal, thereby controlling the light-emitting state of the light source.

Abstract: A lens driving module includes a holder, a cover, a carrier, at least one first magnet, a first coil, at least two second magnets, at least one first sensor and at least one second sensor. The holder includes an opening hole. The cover is made of metal material and coupled to the holder. The carrier is movably disposed in the cover and for coupling to a lens. The first magnet is movably disposed in the cover. The first coil is wound around an outer side of the carrier. The second magnets are disposed on one end of the carrier. The first sensor is for detecting a magnetic field of the second magnets. The second sensor is for detecting a magnetic field of the first magnet.

Abstract: A wiring structure includes an insulating layer and a conductive structure. The insulating layer has an upper surface and a lower surface opposite to the upper surface, and defines an opening extending through the insulating layer. The conductive structure is disposed in the opening of the insulating layer, and includes a first barrier layer and a wetting layer. The first barrier layer is disposed on a sidewall of the opening of the insulating layer, and defines a through hole extending through the first barrier layer. The wetting layer is disposed on the first barrier layer. A portion of the wetting layer is exposed from the through hole of the first barrier layer and the lower surface of the insulating layer to form a ball pad.

Abstract: A cursor calibration method includes setting a threshold angle, and when an angle of elevation between a pointing direction of a pointer and a horizontal plane is reduced from greater than the threshold angle to smaller than or equal to the threshold angle, displaying the cursor of the pointer on a predetermined position of a display.

Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 ?m and is not greater than 10 ?m; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: An auxiliary device for an electric nail gun header structure mainly inserts a head cover body adapted to position and lock a nail gun header with an extended locking frame; the end of the head cover body is used to cover the end of a gun body completely; the bottom of the head cover body is extend with two flange sheets opposite to each other to cover the two sides of a grip of the nail gun, forming particular, stable covering. Therefore, the head cover structure will not be displaced or rotated upon one-handed operation, thereby ensuring the convenience and safety of the operation of the nail gun.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Methods of fabricating a probe are described. In an example, a structure may be formed on a surface of a substrate. The structure may include the probe, a hinge, and an anchor arranged linearly, where an angle is formed between the probe and the hinge. The hinge may be positioned between the probe and the anchor, and the structure may be parallel to the substrate. An amount of solder may be deposited on an area of the structure that spans from a portion of the probe to a portion of the anchor, and across the hinge. The deposited solder may be reshaped by an execution of a solder reflow process. The reshape of the deposited solder may cause the probe to rotate about the hinge in order to reduce the angle between the probe and the hinge.

Abstract: A light-emitting wireless charging structure includes a base, a wireless charging module, a light-emitting element and an upper cover. The wireless charging module is disposed on the base. The light-emitting element is disposed on the base adjacent to the wireless charging module. The upper cover covers the wireless charging module and the light-emitting element. The upper cover has a lower surface facing the wireless charging module and an upper surface opposite to the bottom surface. When the light-emitting element emits light, light coming from the light-emitting element passes through the upper cover and forms a mark on the upper surface to indicate the position of the wireless charging module. When the light-emitting element is turn off or kept in an off state, either the mark that has been formed on the upper surface disappears therefrom or no any mark is ever shown on the top surface.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first conductive feature and a second conductive feature are provided. A first hard mask (HM) is formed on the first conductive feature. A patterned dielectric layer is formed over the first and the second conductive features, with first openings to expose the second conductive features. A first metal plug is formed in the first opening to contact the second conductive features. A second HM is formed on the first metal plugs and another patterned dielectric layer is formed over the substrate, with second openings to expose a subset of the first metal plugs and the first conductive features. A second metal plug is formed in the second openings.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.