Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: An integrated driving module with energy conversion function includes a patterned conductive circuit layer, an integrated electromagnetic induction component layer, a second dielectric layer, an embedded electrical component and a conductive component. The integrated electromagnetic induction component layer, which has a plurality of conductive coil layer, a plurality of conductive connecting component and a first dielectric layer, is disposed on the patterned conductive circuit layer. The conductive coil layers are stacked. Each conductive connecting component is electrically connected between the two conductive coil layers and between the corresponding conductive coil layer and the patterned conductive circuit layer. The first dielectric layer covers the conductive coil layers and the conductive connecting components. The second dielectric layer covers the patterned conductive circuit layer.

Abstract: A random number signal generator used for performing dropout or weight initialization for a node in a neural network. The random number signal generator includes a transistor which generates a random noise signal. The transistor includes a substrate, source and drain regions formed in the substrate, a first insulating layer formed over a channel of the transistor, a first trapping layer formed over the first insulating layer, a second insulating layer formed over the first trapping layer, and a second trapping layer formed over the second insulating layer. One or more traps in the first and second trapping layers are configured to capture or release one or more carriers flowing through the channel region. The random noise signal is generated as a function of one or more carrier being captured or released by the one or more traps.

Abstract: A three dimensional memory includes a substrate, a plurality of source lines, a plurality of isolation structures, a plurality of drain lines, a plurality of bit lines, a plurality of charge storage structures, and a plurality of conductive layers. The source lines are located on the substrate. The isolation structures are respectively located between the source lines, so as to electrically isolate the source lines from each other. The drain lines are located on the source lines. Extending directions of the source lines and the drain lines are different. The bit lines extend from the source lines to the drain lines. The charge storage structures respectively surround the bit lines. The conductive layers respectively cover surfaces of the charge storage structures arranged along each of the source lines.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Methods and systems for activity monitoring include capturing an infrared image of an environment that comprises at least one patient being monitored and at least one infrared-emitting tag. A relationship between the patient being monitored and the at least one infrared-emitting tag is determined. An activity conducted by the patient being monitored is determined based on the relationship between the patient being monitored and the at least one infrared-emitting tag. A course of treatment for the patient being monitored is adjusted based on the determined activity.

Abstract: A driving mechanism for sex toy includes a motor, a turntable with an eccentric pin rotatable by the motor, a sliding guide member drivable by the eccentric pin of the turntable to move linearly up and down upon rotation of the motor, a casing holding a locating block, two links respectively and bilaterally pivoted with respective middle part thereof to two opposite sides of the casing and respective rear ends thereof to two opposite sides of the sliding guide member, a finger plate pivotally connected between opposing front ends of the links, and a drag plate pivotally connected between the finger plate and the locating block.

Abstract: A camera module includes a metal yoke, a holder, a plastic barrel, a plurality of plastic lens elements and a plurality of metal conducting elements. The holder is connected to the metal yoke for forming an inner space. The plastic barrel is movably disposed in the inner space and includes at least one buffering part. The plastic lens elements are disposed in the plastic barrel. The metal conducting elements are at least one leaf spring and a wire element, wherein the metal conducting elements are connected to the plastic barrel. Before the at least one buffering part contacts a contacting part of the at least one leaf spring, there is a gap distance between the at least one buffering part and the contacting part of the at least one leaf spring.

Abstract: Multi-voltage threshold vertical transport transistors and methods of fabrication generally include forming the transistors with vertically oriented silicon fin channels for both the n-type doped field effect transistors (nFET) and the p-type doped field effect transistors (pFET). A silicon oxynitride interfacial layer is provided on sidewalls of the fins in the nFET and a silicon dioxide interfacial with aluminum is provided on sidewalls of the fins in the pFET to provide an aluminum induced dipole. A high k dielectric overlays the interfacial layers and a common work function metal overlays the high k dielectric layer to define a gate structure.

Abstract: Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 ?m to about 100 ?m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

Abstract: A method for filling patterns includes the steps of: providing a substrate having a cell region defined thereon; forming main patterns on the substrate and within the cell region; and filling first dummy patterns adjacent to the main patterns. Preferably, each of the first dummy patterns comprises a first length along X-direction between 2 ?m to 5 ?m and a second length along Y-direction between 3 ?m to 5 ?m.

Abstract: A lens driving apparatus includes a holder, a cover, a carrier, a first magnet, a coil, a spring, two second magnets and a hall sensor. The holder includes an opening hole. The cover is made of metal material and coupled to the holder. The carrier is movably disposed in the cover, and for coupling to a lens. The first magnet is connected to an inner side of the cover. The coil is wound around an outer side of the carrier, and adjacent to the first magnet. The spring is coupled to the carrier. The second magnets are disposed on one end of the carrier which is toward the holder. The hall sensor is for detecting a magnetic field of any one of the second magnets, wherein the magnetic field is varied according to a relative displacement between the hall sensor and the second magnet which is detected.

Abstract: The present invention provides a socket wrench, including a main body and a control sleeve. The main body includes a socket end and a connection end. The socket end is configured to be connected with a fastener. The connection end is configured to be connected with the insertion portion. The connection end includes at least one first through hole. At least one positioning member is movably restricted within the at least one first through hole. The control sleeve is movably assembled to the connection end. The control sleeve includes a first portion and a second portion. The first portion has at least one receiving hole which is selectively correspondable to the at least one first through hole. The first portion is inserted into the second portion. The at least one receiving hole is disposed inside the second portion.

Abstract: A multi-layer wafer and method of manufacturing such wafer are provided. The method includes creating under bump metallization (UMB) pads on each of the two heterogeneous wafers; applying a conductive means above the UMB pads on at least one of the two heterogeneous wafers; and low temperature bonding the two heterogeneous wafers to adhere the UMB pads together via the conductive means. At least one stress compensating polymer layer may be applied to at least one of two heterogeneous wafers. The multi-layer wafer comprises two heterogeneous wafers, each of the heterogeneous wafer having UMB pads and at least one of the heterogeneous wafers having a stress compensating polymer layer and a conductive means applied above the UMB pads on at least one of the two heterogeneous wafers. The two heterogeneous wafers low temperature bonded together to adhere the UMB pads together via the conductive means.

Abstract: A method of manufacturing an embedded magnetoresistive random access memory including the following steps is provided. A memory cell stack structure is formed on a substrate structure. The memory cell stack structure includes a first electrode, a second electrode, and a magnetic tunnel junction structure. A first dielectric layer covering the memory cell stack structure is formed. A metal nitride layer is formed on the first dielectric layer. A second dielectric layer is formed on the metal nitride layer. A first CMP process is performed on the second dielectric layer to expose the metal nitride layer by using the metal nitride layer as a stop layer. An etch back process is performed to completely remove the metal nitride layer and expose the first dielectric layer. A second CMP process is performed to expose the second electrode. The manufacturing method can have a better planarization effect.

Abstract: A bipolar junction transistor (BJT) includes an emitter region, abase region on one side of the emitter region, and a collector region on the other side of the base region. The emitter region includes first fins extending along a first direction, a first metal gate extending across the first fins along a second direction, a second metal gate in parallel with the first metal gate, and an emitter contact plug on the first fins between the first metal gate and the second metal gate. The base region includes second fins extending along the first direction, the first metal gate and the second metal gate extending across the second fins along the second direction, and a base contact plug on the second fins between the first metal gate and the second metal gate. The emitter contact plug is aligned with the base contact plug.

Abstract: A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a semiconductor substrate having an active component region and a non-active component region, a first dielectric layer, a second dielectric layer, high resistivity metal segments, dummy stacked structures and a metal connection structure. The high resistivity metal segments are formed in the second dielectric layer and located in the non-active component region. The dummy stacked structures are located in the non-active component region, and at least one dummy stacked structure penetrates through the first dielectric layer and the second dielectric layer and is located between two adjacent high resistivity metal segments. The metal connection structure is disposed on the second dielectric layer, and the high resistivity metal segments are electrically connected to one another through the metal connection structure.

Abstract: A MOSFET structure including stacked vertically isolated MOSFETs and a method for forming the same are disclosed.

Abstract: A wiring structure includes a dielectric layer and a first patterned conductive layer on the dielectric layer. The dielectric layer has a first region and a second region. The first patterned conductive layer includes a number of fine conductive lines and a number of dummy conductive structures. The number of conductive lines include a first number of conductive lines on the first region and a second number of conductive lines on the second region, and the number of dummy conductive structures include a first number of dummy conductive structures on the second region. The first number of conductive lines occupy a first area on the first region, and the second number of conductive lines and the first number of dummy conductive structures occupy a second area on the second region. A ratio of the second area to the first area is greater than or equal to about 80%.

Abstract: Methods and systems for activity monitoring include capturing an infrared image of an environment that comprises at least one patient being monitored and at least one infrared-emitting tag. A relationship between the patient being monitored and the at least one infrared-emitting tag is determined. An activity conducted by the patient being monitored is determined based on the relationship between the patient being monitored and the at least one infrared-emitting tag. A course of treatment for the patient being monitored is adjusted based on the determined activity.