Patents by Inventor Wen Liu

Wen Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10671666
    Abstract: A pattern based audio searching method includes labeling a plurality of source audio data based on patterns to obtain audio label sequences of the source audio data; obtaining, with a processing device, an audio label sequence of target audio data; determining matching degree between the target audio data and the source audio data according to a predetermined matching rule based on the audio label sequence of the target audio data and the audio label sequences of the source audio data; and outputting source audio data having matching degree higher than a predetermined matching threshold as a search result.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: June 2, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Feng Jin, Qin Jin, Wen Liu, Yong Qin, Xu Dong Tu, Shi Lei Zhang
  • Publication number: 20200167428
    Abstract: A computer-implemented method for utilizing external knowledge and memory networks in a question-answering system includes receiving, from a search engine of a question-answering system, one or more search results based on a search query associated with a question submitted via a user interface associated with a computing device, analyzing the one or more search results to generate search evidence as a source of external knowledge for generating an answer to the question, the search evidence including one or more titles and one or more corresponding text snippets, encoding the search evidence and the search query to generate vectors stored in a memory network, obtaining a final vector representation based on the encoding, and decoding the final vector representation to obtain the answer to the question.
    Type: Application
    Filed: November 26, 2018
    Publication date: May 28, 2020
    Inventors: Peng Wang, Shi Lei Zhang, Wen Liu, Feng Jin, Qin Shi, Yong Qin
  • Patent number: 10665718
    Abstract: A method includes forming a gate stack on a middle portion of s semiconductor fin, and forming a first gate spacer on a sidewall of the gate stack. After the first gate spacer is formed, a template dielectric region is formed to cover the semiconductor fin. The method further includes recessing the template dielectric region. After the recessing, a second gate spacer is formed on the sidewall of the gate stack. The end portion of the semiconductor fin is etched to form a recess in the template dielectric region. A source/drain region is epitaxially grown in the recess.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: May 26, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Chiang, Chi-Wen Liu, Ying-Keung Leung
  • Publication number: 20200160882
    Abstract: An audio detection device and an audio detection method are provided. The audio processing device includes a first audio input device, a second audio input device and an audio processing circuit. The first audio input device is utilized for acquiring a first audio signal and converting first audio signal to a first digital audio signal. The second audio input device is utilized for acquiring a second audio signal and converting second audio signal to a second digital audio signal. The second audio input device is disposed close adjacent to a sound source. A distance between second audio input device and sound source is shorter than a distance between first audio input device and sound source. The audio processing circuit is utilized for performing an echo cancellation process on the first digital audio signal according to second digital audio signal so as to generate a digital audio detection signal.
    Type: Application
    Filed: December 18, 2018
    Publication date: May 21, 2020
    Inventor: Yi-Wen Liu
  • Patent number: 10658247
    Abstract: In accordance with some embodiments, a device includes first and second p-type transistors. The first transistor includes a first channel region including a first material of a first fin. The first transistor includes first and second epitaxial source/drain regions each in a respective first recess in the first material and on opposite sides of the first channel region. The first transistor includes a first gate stack on the first channel region. The second transistor includes a second channel region including a second material of a second fin. The second material is a different material from the first material. The second transistor includes third and fourth epitaxial source/drain regions each in a respective second recess in the second material and on opposite sides of the second channel region. The second transistor includes a second gate stack on the second channel region.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: May 19, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Chiang, Chi-Wen Liu
  • Patent number: 10643105
    Abstract: Intelligent multi-scale image parsing determines the optimal size of each observation by an artificial agent at a given point in time while searching for the anatomical landmark. The artificial agent begins searching image data with a coarse field-of-view and iteratively decreases the field-of-view to locate the anatomical landmark. After searching at a coarse field-of view, the artificial agent increases resolution to a finer field-of-view to analyze context and appearance factors to converge on the anatomical landmark. The artificial agent determines applicable context and appearance factors at each effective scale.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: May 5, 2020
    Assignee: Siemens Healthcare GmbH
    Inventors: Bogdan Georgescu, Florin Cristian Ghesu, Yefeng Zheng, Dominik Neumann, Tommaso Mansi, Dorin Comaniciu, Wen Liu, Shaohua Kevin Zhou
  • Publication number: 20200129418
    Abstract: A Chinese medical cosmetic composition comprising Radix Notoginseng extract, Aloe extract and Flos Lonicerae extract. The Chinese medical cosmetic composition has a scientific and reasonable formula composition, and has the effects of tonifying Qi and nourishing Yin, promoting blood circulation and removing blood stasis, moisturizing and whitening, and strengthening body and sun screening.
    Type: Application
    Filed: October 30, 2018
    Publication date: April 30, 2020
    Inventor: Wen Liu
  • Publication number: 20200135854
    Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 30, 2020
    Inventors: Cheng-Yi Peng, Hung-Li Chiang, Yu-Lin Yang, Chih Chieh Yeh, Yee-Chia Yeo, Chi-Wen Liu
  • Publication number: 20200135169
    Abstract: An audio playback device receives an instruction from a user to select a target voice model from a plurality of voice models and assigns the target voice model to a target character in a text. The audio playback device also transforms the text into a speech, and during the process of transforming the text into the speech, transforms sentences of the target character in the text into the speech of the target character according to the target voice model.
    Type: Application
    Filed: November 30, 2018
    Publication date: April 30, 2020
    Inventors: Guang-Feng DENG, Cheng-Hung TSAI, Tsun KU, Zhi-Guo ZHU, Han-Wen LIU
  • Publication number: 20200135661
    Abstract: Package structures are provided. A package structure includes an adhesive layer and a semiconductor substrate over the adhesive layer. The package structure also includes a connector over the semiconductor substrate. The package structure further includes a first buffer layer surrounding the connector. In addition, the package structure includes an encapsulation layer surrounding the first buffer layer. The first buffer layer is sandwiched between the encapsulation layer and the semiconductor substrate, and a sidewall of the encapsulation layer is in direct contact with a sidewall of the first buffer layer and a sidewall of the adhesive layer. The package structure also includes a redistribution layer over the first buffer layer and the encapsulation layer.
    Type: Application
    Filed: December 31, 2019
    Publication date: April 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsiao-Wen LEE, Hsien-Wen LIU, Shin-Puu JENG
  • Publication number: 20200135653
    Abstract: Structures and formation methods of a package structure are provided. The method includes forming a conductive structure over a carrier substrate and disposing a semiconductor die over the carrier substrate. The method also includes pressing a protective substrate against the carrier substrate at an elevated temperature to bond the protective substrate to the conductive structure. The method further includes forming a protective layer to surround the semiconductor die.
    Type: Application
    Filed: June 11, 2019
    Publication date: April 30, 2020
    Inventors: Po-Hao TSAI, Hsien-Wen LIU, Shin-Puu JENG, Meng-Liang LIN, Shih-Yung PENG, Shih-Ting HUNG
  • Patent number: 10636651
    Abstract: A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: April 28, 2020
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Sheng-Ting Fan, Pin-Shiang Chen, Chee Wee Liu, Chi-Wen Liu
  • Publication number: 20200118668
    Abstract: A computer-implemented method, system, and computer program product are provided for Autism Spectrum Disorder assessment and intervention. The method includes receiving, by a processor device, behavioral phenomenon from a child. The method also includes generating, by the processor device, a similarity score for the child based on a similarity between the behavioral phenomenon and ASD profiles. The method additionally includes evaluating, by the processor device, the similarity score against applied behavior analysis (ABA) training courses. The method further includes determining, by the processor device, a dynamic ABA protocol from a sorted list of the ABA training courses. The method also includes controlling an operation of an interactive training device to deliver the dynamic ABA protocol to the child.
    Type: Application
    Filed: October 10, 2018
    Publication date: April 16, 2020
    Inventors: Yi Qin Yu, Shi Lei Zhang, Jing Li, Wen Liu, Yong Qin
  • Publication number: 20200118884
    Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.
    Type: Application
    Filed: December 16, 2019
    Publication date: April 16, 2020
    Inventors: I-Wen WU, Hsien-Cheng WANG, Mei-Yun WANG, Shih-Wen LIU, Chao-Hsun WANG, Yun LEE
  • Patent number: 10622480
    Abstract: An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor region, and a germanium-containing semiconductor layer between and in contact with the silicon fin and one of the silicon oxide regions.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: April 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Chiang, Jiun-Jia Huang, Chao-Hsiung Wang, Chi-Wen Liu
  • Publication number: 20200111897
    Abstract: Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 9, 2020
    Inventors: Kuo-Cheng Chiang, Ching-Wei Tsai, Chi-Wen Liu, Ying-Keung Leung
  • Patent number: 10610950
    Abstract: A new electrospark deposition (ESD) method and related system are provided in the present invention based on the use of a magnetized electrode, namely magnetic-aided ESD (M-ESD). In particular, the present invention uses a magnetized electrode (either magnetized by an electro-magnet or being a permanent magnet) to attract fine coating powders at the tip thereof which acts as a soft brush to coat on intricate surface profiles. Accordingly, the method of the present invention is able to provide a soft contact between the magnetized anode and the workpiece to be coated or manipulated. The present invention is useful in various surface engineering applications in the fields of aeronautical (e.g. restoration and repair of damaged aircraft turbine blades), nuclear reactors, military engineering, and in medical industries.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: April 7, 2020
    Assignee: The Hong Kong Polytechnic University
    Inventors: Jiang Wen Liu, Tai Man Yue, Zhichao Liu
  • Publication number: 20200101582
    Abstract: A system controls a flow of a chemical mechanical polish (CMP) slurry into a chamber to form a slurry reservoir within the chamber. Once the slurry reservoir has been formed within the chamber, the system moves a polishing head to position and force a surface of a wafer that is attached to the polishing head into contact with a polishing pad attached to a platen within the chamber. A wafer/pad interface is formed at the surface of the wafer forced into contact with the polishing pad and the wafer/pad interface is disposed below an upper surface of the slurry reservoir. During CMP processing, the system controls one or more of a level, a force, and a rotation of the platen, a position, a force and a rotation of the polishing head to conduct the CMP processing of the surface of the wafer at the wafer/pad interface.
    Type: Application
    Filed: January 18, 2019
    Publication date: April 2, 2020
    Inventors: Chih-Wen Liu, Hao-Yun Cheng, Che-Hao Tu, Kei-Wei Chen
  • Publication number: 20200104781
    Abstract: The technical problem of automatically facilitating a career transition that is a career pivot is addressed by providing a career navigator component in an on-line connection network system. The career navigator is configured to determine that a member's intent is to pivot in their career and, in response, identify, rank, and surface member profiles that indicate the same pivot. The operations for recognizing a pivot intent include maintaining hierarchical occupation taxonomy that can be consulted to determine whether the member's activities on the web site relate to the same or different parent occupations. Once the pivot intent has been recognized, the career navigator identifies those member profiles that indicate the same career transition, and presents those profiles to the pivoting member via a custom-generated user interface.
    Type: Application
    Filed: September 28, 2018
    Publication date: April 2, 2020
    Inventors: Karthik Dundee Jayachandar Naidu, Xingyu Chen, Kyle Wen Liu, Ka Ming Chan, Hang Li, Eduardo Monroy Martinez, Vijay Ramamurthy, Himanshu Khurana, Rohan Ramanath, Luan Nguyen
  • Patent number: 10607601
    Abstract: Speech recognition is performed by receiving a speech signal that includes spoken phones. A dynamic time warping procedure is applied to the received speech signal to generate a time-warped signal. The time-warped signal is compared to a plurality of stored reference patterns to identify a set of stored reference patterns that are most similar to the time-warped signal. A candidate hot word is selected from a list using the identified set of stored reference patterns. The selection of the candidate hot word is then refined.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: March 31, 2020
    Assignee: International Business Machines Corporation
    Inventors: Feng Jin, Wen Liu, Li Jun Ma, Peng Cheng P P Zhu, Yong Qin, Qin Shi, Shi Lei Zhang