Patents by Inventor Wen Shen

Wen Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220037312
    Abstract: An IC device includes a transistor including a gate structure between first and second active areas, a first S/D metal portion overlying the first active area, and a second S/D metal portion overlying the second active area. A load resistor including a third S/D metal portion is positioned on a dielectric layer and in a same layer as the first and second S/D metal portions. A first via overlies the first S/D metal portion, second and third vias overlie the third S/D metal portion, and a first conductive structure is configured to electrically connect the first via to the second via.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 3, 2022
    Inventors: Po-Zeng KANG, Wen-Shen CHOU, Yung-Chow PENG
  • Patent number: 11238207
    Abstract: A method for fabricating an integrated circuit is provided. The method includes: receiving a cell schematic of a unit cell of the integrated circuit; when an intrinsic gain of a transistor of the unit cell falls outside a predetermined range of gain values, revising a set of parameter values for a set of size parameters of the unit cell in the cell schematic, wherein the intrinsic gain of the transistor of the unit cell characterized by the revised set of parameter values falls within the predetermined range of gain values; generating a cell layout of the unit cell according to the cell schematic indicating the revised set of parameter values for the set of size parameters; and fabricating the integrated circuit according to the cell layout of the unit cell.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yung-Hsu Chuang, Wen-Shen Chou, Jie-Ren Huang, Yu-Tao Yang, Yung-Chow Peng, Yun-Ru Chen
  • Patent number: 11232988
    Abstract: Methods of rectifying a sidewall profile of a fin-shaped stack structure are provided. An example method includes forming, on a substrate, a first fin-shaped structure and a second fin-shaped structure each including a plurality of channel layers interleaved by a plurality of sacrificial layers; depositing a first silicon liner over the first fin-shaped structure and the second fin-shaped structure; depositing a dielectric layer over the substrate, the first fin-shaped structure and the second fin-shaped structure; etching back the dielectric layer to form an isolation feature between the first fin-shaped structure and the second fin-shaped structure and to remove the first silicon liner over the first fin-shaped structure and the second fin-shaped structure to expose sidewalls of the plurality of channel layers and the plurality of sacrificial layers, and epitaxially depositing a second silicon liner over the exposed sidewalls of the plurality of channel layers and the plurality of sacrificial layers.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: January 25, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shu-Wen Shen, You-Ting Lin, Jiun-Ming Kuo, Yuan-Ching Peng, Yi-Cheng Li, Pin-Ju Liang, Pei-Ren Jeng
  • Patent number: 11217526
    Abstract: A semiconductor device includes transistors and a resistor. The transistors are connected in series between a power terminal and a ground terminal, and gate terminals of the transistors being connected together. The resistor is overlaid above the transistors. The resistor is connected between a source terminal of the transistors and the ground terminal.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: January 4, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Zeng Kang, Wen-Shen Chou, Yung-Chow Peng
  • Patent number: 11215513
    Abstract: A semiconductor device includes a plurality of active area structures. One or more active devices include portions of the plurality of active area structures. A metal layer is formed on the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers. The metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: January 4, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Zeng Kang, Wen-Shen Chou, Yung-Chow Peng
  • Publication number: 20210390245
    Abstract: A semiconductor device including a first active region having a first active configuration, a second active region having a second, and different, active configuration, and a transition cell arranged between the first and second active regions in which the transition cell has a transitional configuration that is different from and compatible with both the first active configuration and the second active configuration.
    Type: Application
    Filed: August 30, 2021
    Publication date: December 16, 2021
    Inventors: Yung-Hsu CHUANG, Wen-Shen CHOU, Yung-Chow PENG, Yu-Tao YANG, Yun-Ru CHEN
  • Publication number: 20210380976
    Abstract: The present disclosure provides oligomeric compounds comprising a modified oligonucleotide having one or more chirally enriched phosphorothioate intemucleoside linkages. In certain embodiments, the modified oligonucleotide decreases expression of target mRNA.
    Type: Application
    Filed: October 4, 2019
    Publication date: December 9, 2021
    Applicant: Ionis Pharmaceuticals, Inc.
    Inventors: Punit P. Seth, Michael Oestergaard, Michael T. Migawa, Xue-hai Liang, Wen Shen, Stanley T. Crooke, Eric E. Swayze
  • Publication number: 20210375688
    Abstract: Methods of rectifying a sidewall profile of a fin-shaped stack structure are provided. An example method includes forming, on a substrate, a first fin-shaped structure and a second fin-shaped structure each including a plurality of channel layers interleaved by a plurality of sacrificial layers; depositing a first silicon liner over the first fin-shaped structure and the second fin-shaped structure; depositing a dielectric layer over the substrate, the first fin-shaped structure and the second fin-shaped structure; etching back the dielectric layer to form an isolation feature between the first fin-shaped structure and the second fin-shaped structure and to remove the first silicon liner over the first fin-shaped structure and the second fin-shaped structure to expose sidewalls of the plurality of channel layers and the plurality of sacrificial layers, and epitaxially depositing a second silicon liner over the exposed sidewalls of the plurality of channel layers and the plurality of sacrificial layers.
    Type: Application
    Filed: May 29, 2020
    Publication date: December 2, 2021
    Inventors: Shu-Wen Shen, You-Ting Lin, Jiun-Ming Kuo, Yuan-Ching Peng, Yi-Cheng Li, Pin-Ju Liang, Pei-Ren Jeng
  • Publication number: 20210350063
    Abstract: Systems, methods, and devices are disclosed herein for developing a cell design. Operations of a plurality of electrical cells are simulated to collect a plurality of electrical parameters. A machine learning model is trained using the plurality of electrical parameters. The trained machine learning model receives data having cell layout design constraints. The trained machine learning model determines a cell layout for the received data based on the plurality of electrical parameters. The cell layout is provided for further characterization of electrical performance within the cell layout design constraints.
    Type: Application
    Filed: July 26, 2021
    Publication date: November 11, 2021
    Inventors: Wen-Shen Chou, Jie-Ren Huang, Yu-Tao Yang, Yung-Chow Peng, Yung-Hsu Chuang
  • Patent number: 11169038
    Abstract: In one embodiment, a system for determining strain within a material includes a magnetostrictive sensor configured to be embedded within the material, a sensing unit configured to apply an excitation magnetic field to the material and the embedded sensor and to receive a response magnetic field that has passed through the material and the embedded sensor, wherein the sensing unit does not contact the material, and a device configured to determine a difference between the excitation magnetic field and the response magnetic field and to determine the strain within the material based upon that difference.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: November 9, 2021
    Assignee: Board of Regents, The University of Texas
    Inventors: Wen Shen, Kenneth Reifsnider, Md Rassel Raihan, Relebohile Qhobosheane
  • Patent number: 11154637
    Abstract: A biodegradable sealant includes: a polyethylene glycol derivative; a photoinitiator; and a solvent, wherein the content of the polyethylene glycol derivative is about 10-75 wt % in the biodegradable sealant. The polyethylene glycol derivative is obtained by a substitution reaction, and in the substitution reaction, the polyethylene glycol is modified with methacrylic anhydride.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: October 26, 2021
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsin-Hsin Shen, Yu-Chi Wang, Sen-Lu Chen, Yu-Bing Liou, Jian-Wei Lin, Yi-Hsuan Lee, Ming-Chia Yang, Ying-Wen Shen, Wei-Lin Yu
  • Patent number: 11149264
    Abstract: The present disclosure provides oligomeric compound comprising a modified oligonucleotide having a central region comprising one or more modifications. In certain embodiments, the present disclosure provides oligomeric compounds having an improved therapeutic index or an increased maximum tolerated dose.
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: October 19, 2021
    Assignee: Ionis Pharmaceuticals, Inc.
    Inventors: Punit P. Seth, Michael Oestergaard, Michael T. Migawa, Xue-hai Liang, Wen Shen, Stanley T. Crooke, Eric E. Swayze
  • Publication number: 20210269472
    Abstract: In certain embodiments, the present disclosure provides compounds and methods of increasing the amount or activity of a target protein in a cell. In certain embodiments, the compounds comprise a translation suppression element inhibitor. In certain embodiments, the translation suppression element inhibitor is a uORF inhibitor. In certain embodiments, the uORF inhibitor is an antisense compound.
    Type: Application
    Filed: September 15, 2020
    Publication date: September 2, 2021
    Applicant: Ionis Pharmaceuticals, Inc.
    Inventors: Stanley T. Crooke, Xue-hai Liang, Wen Shen
  • Patent number: 11106855
    Abstract: Systems, methods, and devices are disclosed herein for developing a cell design. Operations of a plurality of electrical cells are simulated to collect a plurality of electrical parameters. A machine learning model is trained using the plurality of electrical parameters. The trained machine learning model receives data having cell layout design constraints. The trained machine learning model determines a cell layout for the received data based on the plurality of electrical parameters. The cell layout is provided for further characterization of electrical performance within the cell layout design constraints.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wen-Shen Chou, Jie-Ren Huang, Yu-Tao Yang, Yung-Chow Peng, Yung-Hsu Chuang
  • Patent number: 11103446
    Abstract: An ophthalmic drug delivery device and a method for fabricating the same are provided. The ophthalmic drug delivery device includes a shield element and a drug release element. The shield element has a light transmittance more than or equal to 80%. The drug release element is an annular body so that the drug release element surrounds the shield element. The drug release element is neutral and includes a cross-linked neutral collagen, a first hydrophilic biodegradable polymer and a drug. The shield element is acidic and includes a cross-linked acidic collagen and a second hydrophilic biodegradable polymer.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: August 31, 2021
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yu-Bing Liou, Hsin-Yi Hsu, Ying-Wen Shen, Yun-Chung Teng, Yuchi Wang, Hsin-Hsin Shen
  • Patent number: 11106854
    Abstract: A method including the operations of receiving a preliminary device layout including a plurality of active areas, analyzing the preliminary device layout to identify empty areas between the plurality of active areas, determining the configurations of the active areas bordering the empty areas, selecting a transition cell from a transition cell library in which the transition cell has a transitional configuration for reducing density gradient effects in the active areas adjacent the transition cell, and inserting the transition cells into the empty areas to define a modified device layout.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: August 31, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Hsu Chuang, Wen-Shen Chou, Yung-Chow Peng, Yu-Tao Yang, Yun-Ru Chen
  • Publication number: 20210261945
    Abstract: The present disclosure provides oligomeric compound comprising a modified oligonucleotide having a central region comprising one or more modifications. In certain embodiments, the present disclosure provides oligomeric compounds having an improved therapeutic index or an increased maximum tolerated dose.
    Type: Application
    Filed: February 10, 2021
    Publication date: August 26, 2021
    Applicant: Ionis Pharmaceuticals, Inc.
    Inventors: Punit P. Seth, Michael Oestergaard, Michael T. Migawa, Xue-hai Liang, Wen Shen, Stanley T. Crooke, Eric E. Swayze
  • Publication number: 20210256194
    Abstract: A device includes a first cell active area asymmetrically positioned in a first device column between a first barrier line and a second barrier line, a second cell active area asymmetrically positioned in a second device column between the first barrier line and a third barrier line, where the first cell has a first cell length in a first direction perpendicular to the first barrier line which is three times a second cell length in the first direction. The first cell active area and the second cell active area are a first distance from the first barrier line, and the first cell active area is a second distance from the second barrier line, and the second cell active area is the second distance away from the third barrier line.
    Type: Application
    Filed: May 4, 2021
    Publication date: August 19, 2021
    Inventors: Yu-Tao YANG, Wen-Shen CHOU, Yung-Chow PENG
  • Publication number: 20210220094
    Abstract: A method of repairing an oral defect model includes performing a three-dimensional oral defect model obtaining step, a defect cutting line detecting step, a defect point selecting step and a smoothing step. The three-dimensional oral defect model obtaining step is performed to scan an oral cavity to obtain a three-dimensional oral defect model message. The defect cutting line detecting step is performed to detect a defect cutting line of the three-dimension oral defect model message, and drive a displayer to display the defect cutting line. The defect point selecting step is performed to select at least one defect feature point of the defect cutting line via the displayer. The smoothing step is performed to perform a smoothing process at the at least one defect feature point, and convert the three-dimensional oral defect model message into a three-dimensional oral repaired model message to smooth the defect cutting line.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 22, 2021
    Applicant: China Medical University
    Inventors: Yen-Wen Shen, Lih-Jyh Fuh, Chi-Hsiung Yu
  • Publication number: 20210206064
    Abstract: A three-dimensional printing apparatus having electrostatic auxiliary, including a printing platform, a feeding device, a nozzle, and a high voltage power supply, is provided. The feeding device and the nozzle are disposed above the printing platform. The nozzle is connected to the feeding device and is located between the feeding device and the printing platform. A distance between the nozzle and the printing platform is less than or equal to 1 cm. The high voltage power supply has an output end electrically connected to the nozzle and a ground end electrically connected to the printing platform.
    Type: Application
    Filed: December 22, 2020
    Publication date: July 8, 2021
    Applicant: Industrial Technology Research Institute
    Inventors: Hsin-Hsin Shen, Chang-Chou Li, Li-Wen Lai, Yu-Bing Liou, Ying-Wen Shen