Abstract: The invention provides an electronic device, a hinge assembly, and an AR interaction process for an electronic device. The electronic device includes a first body, a second body, a hinge assembly, and a rotatable camera. The hinge assembly includes a first hinge, a second hinge, a third hinge, and an L-shaped hinge. The L-shaped hinge has a first segment and a second segment. The first segment is pivotally connected to the first body through the first hinge, the second segment is pivotally connected to the second body through the second hinge, and the first hinge, the second hinge, and the third hinge are parallel to each other and are not coaxial with each other. In addition, the rotatable camera is assembled to the second segment.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A solid polymeric fiber includes: a six- to ten-fingered sectional area having fingers having central axes. The fingers are positioned unsymmetrically to each of the central axes, and/or the sectional area of the fiber has no rotational axis. In an embodiment, the six- to ten-fingered sectional area is a six-fingered sectional area.

Abstract: A method for manufacturing a semiconductor device package includes: (1) providing a first encapsulation layer; (2) disposing an adhesive layer on the first encapsulation layer; (3) disposing a first die on the adhesive layer; and (4) forming a second encapsulation layer covering the first die, the adhesive layer, and the first encapsulation layer.

Abstract: A semiconductor structure includes a molding compound having a first surface and a second surface opposite to the first surface, a passive device component disposed in the molding compound, a via penetrating the molding compound from the first surface to the second surface, a first connection structure disposed over the first surface of the molding compound and electrically coupled to the passive device component, and a second connection structure disposed over the second surface of the molding compound. The first connection structure and the second connection structure are electrically coupled to each other by the via.

Abstract: A method for video quality detection and an image processing circuit thereof are provided. In the method, an image-processing circuit receives video signals with at least one frame image, and obtains brightness information of pixels from the frame image. A threshold is applied to the pixels of each frame in order to screen the brightness features that can be regarded as an attribute of each frame image. Therefore, a brightness distribution feature with respect to the pixels of each frame image can be obtained by a statistic method. Statistics showing the brightness distribution can be used to determine a quality of each frame image or a video. The image processing circuit can accordingly select an image processing process corresponding to the image quality of each frame image or the whole video.

Abstract: A semiconductor package structure includes an interconnection structure having a first surface and a second surface opposite to the first surface, a die surrounded by a molding compound over the first surface of the interconnection structure, and a passive device surrounded by a dielectric structure over the second surface of the interconnection structure. The passive device is electrically coupled to the die by the interconnection structure.

Abstract: A touch system includes a touch device and an input device. The uplink signal transmitted by the touch device includes a timestamp. The input device transmits a downlink signal through the electrode unit and transmits a side information through a wireless communication unit. The inclusion of the corresponding timestamp in the side information ensures that the side information is combined with the corresponding downlink signal to correctly present the user's operation.

Abstract: An electronic device with multiple screens includes a first body, a second body, a keyboard, and at least one expansion module. The first body has a sliding rail assembly, a first end and a second end. The second body is rotatably connected to the first end of the first body. The sliding base is slidably connected to the sliding rail assembly of the first body. The lifting base is pivotally connected to one side of the keyboard facing the first end and is slidably connected to the sliding rail assembly. The at least one expansion module is detachably connected to the lifting base and is disposed between the second body and the keyboard. When the keyboard slides toward the second body, the sliding base is driven to move along the sliding rail assembly and away from the second end of the first body.

Abstract: A semiconductor package structure includes a wiring structure, a semiconductor module, a protection layer and a plurality of outer conductive vias. The wiring structure includes at least one dielectric layer and at least one redistribution layer. The semiconductor module is electrically connected to the wiring structure. The semiconductor module has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The protection layer covers the lateral surface of the semiconductor module and a surface of the wiring structure. The outer conductive vias surround the lateral surface of the semiconductor module, electrically connect to the wiring structure, and extend through a dielectric layer of the wiring structure and the protection layer.

Abstract: Disclosed are an image tuning device and an image tuning method. The image tuning method includes the following steps: dividing an image area into a plurality of blocks for executing brightness adjustment individually, in which the blocks include a target block and at least one neighboring block; receiving pixel data of the target block to calculate a target block brightness value; receiving pixel data of the at least one neighboring block to calculate at least one neighboring block brightness value; calculating a calculated brightness value of a target pixel within the target block according to the target block brightness value and the at least one neighboring block brightness value; and generating an adjusted brightness value of the target pixel by adjusting an original brightness value of the target pixel according to the calculated brightness value.

Abstract: A memory unit includes a substrate and a floating gate memory cell. The floating gate memory cell includes an erase gate structure disposed on the substrate, floating gate structures select gates, a common source and drains. The common source is disposed in the substrate, and the erase gate structure is disposed on the common source. The floating gate structures protrude from recesses of the substrate at two opposite sides of the erase gate structure. A method for controlling the memory unit includes applying an erase gate programming voltage on the erase gate structure, applying a control gate programming voltage on the common source, applying a bit line programming voltage on the drains, and applying word line programming voltage on the select gates, in which the control gate programming voltage is greater than the erase gate programming voltage.

Abstract: A display device includes at least one speaker, a signal transceiver and a processor. The at least one speaker outputs a sound according to a volume parameter. The signal transceiver receives incoming call information from a communication device. The processor is electrically coupled to the at least one speaker and the signal transceiver. The processor detects signal strength of the communication device and adjusts the volume parameter according to the incoming call information and the signal strength, in order to increase or decrease a volume of the sound.

Abstract: A flexible display includes a bottom plate, a support plate, two hinge modules, a frame body, a bending module and a flexible panel. The support plate is provided with a first end and a second end. The first end is rotatably connected to the bottom plate. The hinge modules are disposed at the second end of the support plate. The frame body is provided with a fixed frame and a plurality of turning frames. The fixed frame is connected to the hinge modules. The plurality of turning frames are pivoted to two opposite sides of the fixed frame respectively. The bending module is connected with the fixed frame and the plurality of turning frames. The flexible panel is disposed on the frame body and covers the bending module. When the flexible display is switched to a touch mode, the bending module drives the plurality of turning frames to be flush with the fixed frame so that the flexible panel is in a flat plate shape.

Abstract: A network system comprising: a control node; a first head node, comprising a first head forward port, a first head backward port and a first head backup port, wherein the first head forward port is connected to the control node; a first ordinary node, comprising a first forward port, a first backward port and a first backup port, wherein the first forward port is connected to the first head backward port; a second ordinary node, comprising a second forward port, a second backward port and a second backup port, wherein the second forward port is connected to the first backward port; and a third ordinary node, comprising a third forward port, a third backward port and a third backup port, wherein the third forward port is connected to the second backward port, wherein the third backup port is connected to the first head backup port.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: An electronic device includes a first body, a second body and at least one driving mechanism. The second body includes a casing and a flexible screen installed on the casing. The driving mechanism includes a shaft, a driving element and a linking assembly. The shaft has first and second connecting portions opposite to each other, the first connecting portion is fixed to the first body, and the second body is pivoted to the second connecting portion. The driving element is sleeved on the shaft and is located in the casing. The linking assembly is carried by the casing and covered by the flexible screen. When the second body is folded onto the first body, the flexible screen keeps flat. When the second body is unfolded with respect to the first body, the driving element is rotated and moved with respect to the shaft to drive the linking assembly to move, and the linking assembly drives the flexible screen to bend.

Abstract: A non-volatile memory (NVM) cell includes a semiconductor wire including a select gate portion and a control gate portion. The NVM cell includes a select transistor formed with the select gate portion and a control transistor formed with the control gate portion. The select transistor includes a gate dielectric layer disposed around the select gate portion and a select gate electrode disposed on the gate dielectric layer. The control transistor includes a stacked dielectric layer disposed around the control gate portion, a gate dielectric layer disposed on the stacked dielectric layer and a control gate electrode disposed on the gate dielectric layer. The stacked dielectric layer includes a first silicon oxide layer disposed on the control gate portion, a charge trapping layer disposed on the first silicon oxide, and a second silicon oxide layer disposed on the charge trapping layer.

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes: providing a substrate including an electrical component; forming a capacitor structure in the substrate, proximal to a heterogeneous interface of the substrate, and physically and electrically isolated from the electrical component; forming a conductive terminal over and electrically connected with the capacitor structure; and contacting the conductive terminal with a probe to measure an electrical parameter of the capacitor structure, wherein the electrical parameter corresponds to a humidity permeability at the heterogeneous interface. A semiconductor structure thereof is also provided.