Abstract: A deep-sea water concentrate skin application kit of deep-sea active concentrate and skin care formula is provided. The deep-sea water concentrate skin application kit has the following properties of micronizing the skin care formulas immediately, and decreasing the surface tension of the deep-sea active concentrate immediately; furthermore, the deep-sea active concentrate can become a driving force for the permeability of the micronized skin care formulas. Therefore, the deep-sea water concentrate skin application kit can be more easily absorbed into the skin (dermis). A manufacturing method of the deep-sea water concentrate skin application kit is also provided to improve skin appearance.

Abstract: In some embodiments, a semiconductor structure includes a first device and a second device. The first device has a first surface. The first device includes a first active region defined by a first material system. The second device has a second surface. The second surface is coplanar with the first surface. The second device includes a second active region defined by a second material system. The second material system is different from the first material system.

Abstract: A pharmaceutical composition comprising: (a) an isolated peptide, wherein the peptide includes three or four arginine-rich domains (ARDs) from the carboxy-terminal region of hepatitis B virus core protein (HBc) and exhibits an anti-microbial activity; and (b) a pharmaceutically acceptable carrier.

Abstract: An antimicrobial peptide, the peptide comprising 2 to 20 variable domains, each variable domain is a sequence of 2 to 20 consecutive basic amino acids, wherein (a) the variable domains are separated from each other by a variable linker, (b) the variable linker can have 1 to 20 any amino acids other than two or more consecutive basic amino acids, and (c) the peptide has no more than 100 amino acids.

Abstract: A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.

Abstract: Optical devices and systems are depicted and described herein. One example of the optical system is disclosed to include a semiconductor layer, a first metal strip positioned adjacent to a first surface of the semiconductor layer, a second metal strip positioned adjacent to a second surface of the semiconductor layer that opposes the first surface of the semiconductor layer, and a third metal strip positioned adjacent to the second surface of the semiconductor layer. In one example, the first metal strip includes a first aperture positioned adjacent to a first active region in the semiconductor layer and second aperture positioned adjacent to a second active region in the semiconductor layer. The second metal strip overlaps the first metal strip in proximity with the first active region and not the second active region and the third metal strip is oriented substantially parallel with the second metal strip.

Abstract: Aspects of the present disclosure disclose a superjunction trench MOSFET device for low voltage or medium voltage devices and a method of fabricating the same. The superjunction trench MOSFET device according to aspects of the present disclosure comprises an active cell region and a termination region disposed at an outer periphery of the active cell region. The active cell region comprises an array of device cells with the superjunction structure. The termination region may comprise a termination structure. In one embodiment, the termination structure includes guard rings in an intrinsic epitaxial layer. In one embodiment, the termination structure includes an array of floating P columns. In another embodiment, the termination structure includes an array of floating P columns and floating termination trenches.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

Abstract: Cell reselection for transitioning a user device from a macro cell to a small cell may be performed by comparing a first reselection candidate small cell and a second reselection candidate small cell based on reselection criteria, and selecting a final reselection candidate based on the comparison.

Abstract: A method is proposed for identifying an anatomical structure within a spatial-temporal image (i.e. a series of frames captured as respective times). A current frame of spatial-temporal medical image is processed using information from one or more previous and/or subsequent temporal frames, to aid in the segmentation of an object or a region of interest (ROI) in a current frame. The invention is applicable to both two- and three-dimensional spatial-temporal images (i.e., 2D+time or 3D+time), and in particular to cardiac magnetic resonance (CMR images). An initialization process for this method segments the left ventricle (LV) in a CMR image by a fuzzy c-means (FCM) clustering algorithm which employs a circular shape function as part of the definition of the dissimilarity measure.

Abstract: A ceramic and plastic composite and a method for fabricating the same are disclosed. A chemical cleaning treatment, a microetching treatment, a hole reaming treatment, and a surface activating treatment are performed on the surface of a ceramic matrix to form nanoholes with an average diameter ranging between 150 nm and 450 nm. Plastics are injected onto the surface of the baked ceramic matrix to form a plastic layer. The plastic layer more deeply fills the nanoholes to have higher adhesion. Thus, the higher combined strength and air tightness exist between the ceramic matrix and the plastic layer to improve the reliability and the using performance of the ceramic and plastic composite.

Abstract: A process to treat fines tailings generated from mining operations, wherein tailings material is sprayed onto a solid substrate as a thin layer and allowed to dry. The spray may be re-applied on top of the dried tailings film leading to multiple layers of dried tailings solids. The method may yield a solid, dry, and consolidated tailings material.

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Abstract: A pharmaceutical composition for use in killing and/or inhibiting the growth and/or proliferation of a microorganism in a subject in need thereof, or for treating a subject afflicted with a microbial infection is disclosed. The composition comprises: (a) an effective amount of an isolated peptide, wherein the peptide comprises the arginine-rich carboxy-terminal region of hepatitis B virus core protein (HBc) and exhibits an antimicrobial activity; and (b) a pharmaceutically acceptable carrier. The peptide exhibits an activity against Gram-negative bacteria, Gram-positive bacteria, and/or fungi.

Abstract: The present disclosure provides a mechanism that may allow a UE to determine whether PBCH repetition is enabled in the target cell without performing a hypothesis test. For example, the apparatus may receive a handover message from a serving cell. In an aspect, the handover message may be associated with a handover procedure to a target cell. In addition, the apparatus may determine whether to perform a hypothesis test to determine if a PBCH repetition is enabled in the target cell based on the handover message. In one example, the apparatus may determine not to perform the hypothesis test when the handover message includes information that indicates if the PBCH repetition is enabled in the target cell. In another example, the apparatus may determine to perform the hypothesis test when the handover message does not include information that indicates if the PBCH repetition is enabled in the target cell.

Abstract: A passive alignment system is provided that comprises one or more first meltable elements disposed on a surface, one or more second meltable elements disposed on a surface and one or more first standoff devices. The first and second meltable elements transition from first and second pre-molten states, respectively, to first and second molten states, respectively, when subjected to first and second temperatures, respectively. In the first molten state, the first meltable elements control relative alignment between the surfaces in first and second dimensions. In the second molten state, the second meltable elements and the first standoff devices control relative alignment between the surfaces in a third dimension. The passive alignment system is suitable for use in a parallel optical communications module to precisely passively align ends of a plurality of optical fibers or waveguides with respective light sources or light detectors of the module.

Abstract: Aspects of the present disclosure disclose a superjunction trench MOSFET device for low voltage or medium voltage devices and a method of fabricating the same. The superjunction trench MOSFET device according to aspects of the present disclosure comprises an active cell region and a termination region disposed at an outer periphery of the active cell region. The active cell region comprises an array of device cells with the superjunction structure. The termination region may comprise a termination structure. In one embodiment, the termination structure includes guard rings in an intrinsic epitaxial layer. In one embodiment, the termination structure includes an array of floating P columns. In another embodiment, the termination structure includes an array of floating P columns and floating termination trenches.

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Abstract: A quantum dot includes: a core including at least one first positive ion precursor and at least one negative ion precursor; a shell including at least one second positive ion precursor and at least one negative ion precursor and wrapping the core; and a ligand formed on a surface of the shell, wherein the first positive ion precursor is an n-period element and the second positive ion precursor is an (n-1)-period element, where n is an integer of 3 to 6.

Abstract: In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.