Abstract: The present invention relates to a series of substituted 3-aminopropane phosphinic acid derivatives of formula I: wherein R, R1, P1, P2 and P3 are as defined herein. The compounds of this invention are useful in treating a variety of diseases including but not limited to depression, anxiety, certain psychiatric symptoms, cognitive impairment and schizophrenia.

Abstract: Disclosed is an electrolyte for batteries, which comprises: (a) an electrolyte salt; (b) an electrolyte solvent; and (c) a sulfonate-based compound containing at least one electron withdrawing group (EWG) selected from the group consisting of a cyano group (—CN), an isocyanate group (—NCO), a thiocyanate group (—SCN) and an isothiocyanate group (—NCS). An electrode comprising the sulfonate-based compound or a chemical reaction product thereof, partially or totally formed on the surface thereof, and an electrochemical device comprising the electrolyte and/or the electrode are also disclosed. The electrochemical device using the sulfonate-based compound containing a cyano group, an isocyanate group, a thiocyanate group and/or an isothiocyanate group as an additive for electrolytes can provide significantly improved high-temperature lifespan characteristics.

Abstract: A semiconductor memory device supporting a self refresh operation is disclosed and comprises an address buffer unit and an operation control unit. The address buffer unit may be enabled during the self refresh operation by a first external control signal to generate an internal address signal. The operation control unit controls the start of the self refresh operation in response to the internal address signal.

Abstract: Provided are a nonvolatile memory device having multi bit storage and a method of manufacturing the same.

Abstract: A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

Abstract: Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

Abstract: A dish washer according to the present invention comprises: a tub for holding dishes and opened an one end thereof; a door for selectively sealing the opened end of the tub, and have a depressed part with a little of depth on an inner side; and a sterilizing apparatus which is installed on the door; wherein the sterilizing apparatus includes an ultraviolet rays generating section which occurs the ultraviolet rays, a reflection member which is installed on the depressed part, and reflects the ultraviolet rays which is occurred on an ultraviolet rays generating section into the inner side of the tub, and a cover member which prevents the influx of the washing liquid into an ultraviolet rays generating section.

Abstract: A display apparatus includes a display panel, a casing formed with an opening and to accommodate the display panel, an anion generator disposed with the casing and having an electrode and a circuit part connected to the electrode to drive the electrode to generate anions, and a covering member provided between the opening in the casnig and the anion generator and having a conductive main body plate including an anion discharging part to discharge the anions generated by the anion generator and a ground part extending from the main body plate within the casing. Thus, the display apparatus can stably discharge anions through an anion ventilation aperture.

Abstract: Disclosed is an electrolyte for a battery, which comprises: (a) an electrolyte salt; (b) a solvent for electrolyte; and (c) a compound represented by the following formula 1: wherein R is a halogen atom, or a halogen-substituted or non-substituted C1˜C10 alkyl group or alkenyl group. An electrode comprising a passivation layer partially or totally formed on a surface thereof, wherein the passivation layer comprises a compound represented by the following Formula 1 or a chemical reaction product thereof, and a secondary battery using the electrolyte and/or the electrode are also disclosed. The compound can improve the initial charge/discharge efficiency and cycle life characteristics of a secondary battery, and can inhibit a battery from swelling under high-temperature storage conditions.

Abstract: A display apparatus includes a casing having a negative ion emitting vent formed therein, a negative ion generator having an electrode provided in the casing corresponding to the negative ion emitting vent to generate negative ions, and a cleaner movably coupled to the casing to contact and clean the electrode. Accordingly, the display apparatus is capable of cleaning an electrode of a negative ion generator.

Abstract: A dual image projection system separates a single image projected from a single projector into two images vertically or horizontally, inputs the separated images by reversing the left and right sides of the separated images, and completely separates the separated images using a separation mirror disposed in front of a projection lens of the projector such that the separated images are displayed on left and right screens or on front and rear screens. The images displayed on the screens are normal images whose right and left sides are not reversed.

Abstract: The present invention relates to the use of a peptide that interacts with the ?v?3 integrin of endothelial cells. More particularly, the invention relates to a method for inhibiting endothelial cell adhesion, endothelial cell migration and/or angiogenesis, using a peptide consisting of at least 18 amino acids, comprising tyrosine-histidine (TY) or asparagines-histidine (NH), and at least three hydrophobic amino acids with bulky side chains; or equivalents thereof. Furthermore, the invention provides a method for treating or preventing angiogenesis-related diseases, using the peptide.

Abstract: A multichip module package uses bond wire with plastic resin on one side of a lead frame to package an integrated circuit and flip chip techniques to attach one or more mosfets to the other side of the lead frame. The assembled multichip module 30 has an integrated circuit controller 14 on a central die pad. Wire bonds 16 extend from contact areas on the integrated circuit to outer leads 2.6 of the lead frame 10. On the opposite, lower side of the central die pad, the sources and gates of the mosfets 24, 26 are bump or stud attached to the half etched regions of the lead frame. The drains 36 of the mosfets and the ball contacts 22.1 on the outer leads are soldered to a printed circuit board.

Abstract: The present invention is concerned with racemic or enantiomerically enriched substituted carboxylic acids and derivatives thereof represented by Formula 1; or pharmaceutically acceptable salts thereof. The present invention also includes pharmaceutical compositions comprising an effective amount of a compound of Formula 1 in admixture with a pharmaceutically acceptable carrier or excipient. The compositions may include additional therapeutic agents for combination therapy. The present invention provides a new class of pharmaceutically active compounds, which are useful in the treatment and control of diabetes and its related metabolic diseases.

Abstract: A polishing pad for chemically mechanically polishing a semiconductor wafer comprises a first groove pattern circularly formed on the surface of the polishing pad, and a second groove pattern formed on the surface of the polishing pad while spirally extending from the circular center of the polishing pad to the outside so as to overlap the first groove pattern. The polishing pad further comprises a third groove pattern formed on the surface of the polishing pad while radially extending from the circular center of the polishing pad to the outside so as to overlap the first and second groove patterns. A chemical mechanical polishing apparatus comprises the polishing pad. The polishing pad of the chemical mechanical polishing apparatus has enhanced groove patterns formed on the polishing pad to provide uniform distribution of the slurry, thereby enhancing polishing speed and polishing uniformity.

Abstract: Azole compounds containing carbamoyl group and pharmaceutically useful salts thereof are described. The compounds are effective anticonvulsants which are used in the treatment of disorders of the central nervous system, especially as anxiety, depression, convulsion, epilepsy, migraine, bipolar disorder, drug abuse, smoking, ADHD, obesity, sleep disorder, neuropathic pain, stroke, cognitive impairment, neurodegeneration, stroke and muscle spasm.

Abstract: In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a semiconductor substrate, doped with impurities of a first conductivity type, which has one or more fins defined by at least two separate trenches formed in the substrate, the fins extending along the substrate in a first direction; pairs of gate electrodes formed as spacers at sidewalls of the fins, wherein the gate electrodes are insulated from the semiconductor substrate including the fins and extend parallel to the fins; storage nodes between the gate electrodes and the fins, and insulated from the gate electrodes and the semiconductor substrate; source regions and drain regions, which are doped with impurities of a second conductivity type, and are separately formed at least at surface portions of the fins and extend across the first direction of the fins; and channel regions corresponding to the respective gate

Abstract: Disclosed is a canvas cleaning apparatus for use in a paper mill. The apparatus includes a main injection unit for injecting cleaning water having an injection head moved from side to side, an auxiliary injection unit for injecting the cleaning water enclosing the injection head of the main injection unit and having a permanent magnetic fixed to one end thereof, an auxiliary suction unit for sucking cleaning water and wastes installed at a position opposed to the main injection unit and having a permanent magnet fixed to one end thereof, and a main suction unit for sucking cleaning water and wastes fixed to the auxiliary suction unit.

Abstract: An apparatus for injecting plasma in the atmosphere is provided, including a plurality of dielectric panels (13a, 13b, 13c), and 13d, which are disposed in parallel at predetermined intervals, a gas supply portion (14), to which the dielectric panels (13a, 13b, 13c, and 13d) are fixed and which supplies a gas to spaces between the dielectric panels (13a and 13b), between the dielectric panels (13b and 13c), and between the dielectric panels (13c and 13d), power electrodes (15a, 15b, and 15c), which are linearly installed near the gas supply portion (14) and between the dielectric panels (13a and 13b, between the dielectric panels 13b and 13c, and between the dielectric panels 13c and 13d), respectively, ground electrodes (16a, 16b, 16c, and 16d), which are formed in the ends of the dielectric panels (13a, 13b, 13c, and 13d), respectively, and a high frequency generator (17), which applies high frequency power to the power electrodes (15a, 15b, and 15c) and the ground electrodes (16a, 16b, 16c, and 16d).

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical polishing process. In accordance with the present invention, non-uniformity of the removal rate in a chemical mechanical polishing process is countervailed by dopants which are implanted at different concentrations via partial ion implantation, and thereby it is possible to polish the target film at a uniform removal rate.