Patents by Inventor Yong In CHOI

Yong In CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060214219
    Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.
    Type: Application
    Filed: March 15, 2006
    Publication date: September 28, 2006
    Inventors: Byung-yong Choi, Dong-gun Park, Yun-gi Kim, Choong-ho Lee, Young-mi Lee, Hye-jin Cho
  • Patent number: 7113274
    Abstract: In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: September 26, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-Sin Yang, Sang-Mun Chon, Sun-Yong Choi, Chung-Sam Jun
  • Publication number: 20060209406
    Abstract: A portable screen device having a dual shaft structure is disclosed. A left and a right rotation shafts are installed to an upper rod and the center of a lower frame of a screen in the horizontal direction and are connected to a left and a right supports. The rotation shafts are engaged with each other by a single adjusting device. When the screen moved up, the elasticity of the screen is held by left and right elastic wheels such that height of the screen is maintained. A magnet and a magnetic substance contact each other and are separated from each other at the central portions of the left and right supports. Due to rotation of a rotation rod installed in the intermediate portion of the supports, the screen moves up and down. Therefore, volume and weight of the portable screen device are reduced and the stability is increased.
    Type: Application
    Filed: March 14, 2006
    Publication date: September 21, 2006
    Inventor: Hae-Yong Choi
  • Publication number: 20060202972
    Abstract: A display apparatus includes a display panel to display a picture thereon, a front cover and a rear cover to support the display panel, a pen unit movable on the display panel and including a light generator to emit light and a supersonic wave generator to emit a supersonic wave, a light sensor provided at the front cover to detect the light emitted from the light generator, a first supersonic wave sensor provided at the front cover to detect the supersonic wave emitted from the supersonic wave generator, and disposed adjacent to the light sensor to measure a distance from the pen unit using a time difference between when the light sensor detects the light and when the first supersonic wave generator detects the supersonic wave, a second supersonic wave sensor provided at the front cover to detect the supersonic wave emitted from the supersonic wave generator, and spaced apart from the first supersonic wave sensor to measure a relative distance from the pen unit using a time difference between when the first
    Type: Application
    Filed: February 21, 2006
    Publication date: September 14, 2006
    Inventors: Dae-jin Kim, Ki-hyub Sung, Hyun-yong Choi
  • Publication number: 20060194873
    Abstract: This invention is directed to methods for preventing, treating, reversing, inhibiting or arresting epilepsy and epileptogenesis in a subject comprising administering to the subject in need thereof a therapeutically effective amount of a compound selected from the group consisting of Formula (I) and Formula (II), or a pharmaceutically acceptable salt or ester thereof: wherein phenyl is substituted at X with one to five halogen atoms selected from the group consisting of fluorine, chlorine, bromine and iodine; and, R1, R2, R3, R4, R5 and R6 are independently selected from the group consisting of hydrogen and C1-C4 alkyl; wherein C1-C4 alkyl is optionally substituted with phenyl (wherein phenyl is optionally substituted with substituents independently selected from the group consisting of halogen, C1-C4 alkyl, C1-C4 alkoxy, amino, nitro and cyano).
    Type: Application
    Filed: September 15, 2005
    Publication date: August 31, 2006
    Inventors: Yong Choi, Robert Gordon, Gerald Novak, Carlos Plata-Salaman, Roy Twyman, H. White, Boyu Zhao
  • Publication number: 20060195289
    Abstract: A temperature sensor instruction signal generator, which may drive a temperature sensor, and a semiconductor memory device including the same. The temperature sensor instruction signal generator may generate an instruction signal that instruct the operation of the temperature sensor using at least one of a master clock (CLK) signal, a clock enable (CKE) signal, a row address selection (RAS) signal, a column address selection (CAS) signal, a write enable (WE) signal, and a chip selection (CS) signal, wherein the instruction signal may be enabled corresponding to at least one of a self refresh mode, an auto refresh mode, and a long tRAS mode. The semiconductor memory device may include a temperature sensor and the temperature sensor instruction signal generator.
    Type: Application
    Filed: February 15, 2006
    Publication date: August 31, 2006
    Inventors: Jong-Hyun Choi, Dong-Il Seo, Yong-Gu Kang, Jung-Yong Choi, Young-Hun Seo
  • Patent number: 7098018
    Abstract: The present invention relates to novel aminopeptidase derived from Bacillus licheniformis, a gene encoding the aminopeptidase, an expression vector containing the gene, a cell transformant transfected with the expression vector and a process for preparing a natural type protein using thereof. More particularly, the present invention relates to a gene encoding aminopeptidase which is cloned and manufactured using the recombinant DNA technique, an expression vector containing the gene, a cell transformant transfected with the expression vector and a recombinant aminopeptidase which is necessary to produce recombinant human growth hormone in a natural type protein and can be expressed in a high yield more stably and advantageously, compared with conventional methods for the purification.
    Type: Grant
    Filed: July 6, 2002
    Date of Patent: August 29, 2006
    Assignee: LG Life Sciences Ltd.
    Inventors: Young-Phil Lee, Seung-won Lee, Chul-ho Jung, Hyung-Cheol Kim, Soon-Yong Choi, Jin-suk Kim, Hyun-Sik Kim, Jung-Woo Seo
  • Patent number: 7097706
    Abstract: The object of this invention is to provide a non-calcined clay composite used as building materials capable of promoting humans' health and being desirably used irrespective of location, which is improved in terms of strength without calcining clay. Because the non-calcined clay composite is produced without calcining clay, the process of producing it is simplified and its productivity is improved. The non-calcined clay composite includes 50 to 90 wt % clay, 2 to 30 wt % lime, 4 to 48 wt % blast furnace slag, 0.04 to 0.9 wt % alkaline chemical, and water as a balance, and has high compression strength due to an ionic coagulation reaction, a pozzolan reaction, and a latent hydraulic reaction.
    Type: Grant
    Filed: April 14, 2003
    Date of Patent: August 29, 2006
    Assignee: G Plus Co., Ltd.
    Inventors: Hee-Yong Choi, Hey-Zoo Hwang, Min-Chol Cho, Tae-Sung Park, Yu-Son Chu
  • Publication number: 20060186460
    Abstract: In a flash memory device, which can maintain an enhanced electric field between a control gate and a storage node (floating gate) and has a reduced cell size, and a method of manufacturing the flash memory device, the flash memory device includes a semiconductor substrate having a pair of drain regions and a source region formed between the pair of drain regions, a pair of spacer-shaped control gates each formed on the semiconductor substrate between the source region and each of the drain regions, and a storage node formed in a region between the control gate and the semiconductor substrate. A bottom surface of each of the control gates includes a first region that overlaps with the semiconductor substrate and a second region that overlaps with the storage node. The pair of spacer-shaped control gates are substantially symmetrical with each other about the source region.
    Type: Application
    Filed: December 13, 2005
    Publication date: August 24, 2006
    Inventors: Byung-yong Choi, Chang-woo Oh, Dong-gun Park, Dong-won Kim, Yong-kyu Lee
  • Publication number: 20060181867
    Abstract: A light-diffusing member includes a first face, a second face arranged opposite to the first face, and a light-diffusing portion including at least one valley and at least one ridge that are alternatively arranged. A first thickness of the light-diffusing member between the ridge and the first face is about 1.15 to about 1.80 times greater than a second thickness of the light-diffusing member between the valley and the first face.
    Type: Application
    Filed: December 15, 2005
    Publication date: August 17, 2006
    Inventors: Seong-Sik Choi, Dong-Lyoul Shin, Doo-Won Lee, Kui-Yong Choi, Ju-Hwa Ha, Byung-Yun Joo, Jung-Wook Paek, Jin-Sung Choi, Heu-Gon Kim, Sang-Hoon Lee, Jae-Hwan Chun
  • Publication number: 20060170838
    Abstract: A backlight assembly includes a receiving container and a light source. The receiving container includes a bottom plate having a lower face and an opposing upper face, a sidewall part, and a plurality of light property controlling parts having a substantially wedge shaped cross-section, which extend substantially parallel to a pair of first sidewalls of the sidewall part. The light source is disposed between adjacent light property controlling parts, and the light source is received by the receiving container. The backlight assembly may increase the brightness and brightness-uniformity of light.
    Type: Application
    Filed: January 10, 2006
    Publication date: August 3, 2006
    Inventors: Seong-Sik Choi, Dong-Lyoul Shin, Kui-Yong Choi, Jae-Hwan Chun, Doo-Won Lee
  • Publication number: 20060164903
    Abstract: A semiconductor memory device supporting a self refresh operation is disclosed and comprises an address buffer unit and an operation control unit. The address buffer unit may be enabled during the self refresh operation by a first external control signal to generate an internal address signal. The operation control unit controls the start of the self refresh operation in response to the internal address signal.
    Type: Application
    Filed: January 10, 2006
    Publication date: July 27, 2006
    Inventors: Jung-Yong Choi, Young-Gu Kang, Ki-Ho Jang
  • Publication number: 20060158897
    Abstract: In a backlight assembly and an LCD apparatus including a receiving unit formed by an injection molding process, a plurality of sidewalls is protruded from a bottom plate, and a receiving space is defined by the sidewalls and the bottom plate. A strength-reinforcing member is formed on a rear surface of the bottom plate to thereby reinforce a bending strength of the bottom plate. Accordingly, the receiving unit for receiving a lamp unit is formed using a material used with an injection molding process, and the strength-reinforcing member reinforces the bending strength of the bottom plate. Cost and weight of the backlight assembly and the LCD apparatus may be sufficiently reduced.
    Type: Application
    Filed: January 17, 2006
    Publication date: July 20, 2006
    Inventors: Seong-Sik Choi, Dong-Lyoul Shin, Doo-Won Lee, Kui-Yong Choi, Jae-Hwan Chun, Du-Hwan Chung
  • Publication number: 20060159072
    Abstract: A method for exchanging media description information between user agents using a session initiation protocol (SIP) comprises the steps of: providing information on an OS and sound module of a first user agent so that the first user agent generates, in a media description field of a session description protocol (SDP), an SIP message including the information on the OS and sound module of the first user agent, and sends it to a second user agent; and setting a processing format for voice data of the second user agent so that the second user agent determines the voice data format supportable by the first user agent from the information on the OS and sound module of the first user agent, compares it with the voice data format supportable by the second user agent, and sets a format commonly supportable by the first and second user agents as the voice data format of the second user agent.
    Type: Application
    Filed: December 23, 2005
    Publication date: July 20, 2006
    Inventors: Taek-Ho Kim, Myeon-Kee Youn, Seong-Joon Jeon, Jin-Suk Lee, Kwang-Yong Choi, Jae-Kil Lee
  • Publication number: 20060154410
    Abstract: A transistor having a gate dielectric layer of partial thickness difference and a method of fabricating the same are provided. The method includes forming a gate dielectric layer having a main portion with a relatively thin thickness formed on a semiconductor substrate, and a sidewall portion with a relatively thick thickness formed on both sides of the main portion. A first gate is formed overlapping the main portion of the gate dielectric layer, and forming a second gate layer covering the sidewall portion of the gate dielectric layer and covering the first gate. The second gate layer is etched, thereby forming second gates patterned with a spacer shape on sidewalls of the first gate. The exposed sidewall portion of the gate dielectric layer is selectively etched using the second gates as a mask, thereby forming a pattern of the gate dielectric layer to be aligned with the second gates. A source/drain is formed in a portion of the semiconductor substrate exposed by the second gates.
    Type: Application
    Filed: January 11, 2006
    Publication date: July 13, 2006
    Inventors: Byung-yong Choi, Chang-woo Oh, Dong-gun Park, Dong-won Kim
  • Publication number: 20060154421
    Abstract: Provided is a method of manufacturing a semiconductor device, by which a cell transistor formed .on a cell array area of a semiconductor substrate employs a structure in which an electrode in the shape of spacers is used to form a gate and a multi-bit operation is possible using localized bits, and transistors having structures optimized to satisfy different requirements depending upon functions of the transistors can be formed on a peripheral circuit area which is the residual area of the semiconductor substrate. In this method, a cell transistor is formed on the cell array area.
    Type: Application
    Filed: January 11, 2006
    Publication date: July 13, 2006
    Inventors: Byung-yong Choi, Choong-ho Lee, Dong-won Kim, Dong-gun Park
  • Publication number: 20060148183
    Abstract: A semiconductor device having a high voltage MOS transistor. The device includes a gate oxide layer disposed between a gate electrode and a substrate on an active area and having relatively thick portions at edges thereof. A fabrication method includes forming on the substrate is a nitride layer having an opening in a high voltage region. An oxide layer is deposited over the substrate and anisotropically etched to remain only on sidewalls of the opening. A first gate oxide layer is formed on the substrate in the opening, and the nitride layer is removed. Then a second gate oxide layer is formed over the substrate such that the second gate oxide layer has a relatively thinner thickness than the first gate oxide layer. Gate electrodes are then formed in the high voltage region and the low voltage region.
    Type: Application
    Filed: December 30, 2005
    Publication date: July 6, 2006
    Applicant: DongbuAnam Semiconductor Inc.
    Inventor: Yong Choi
  • Patent number: 7072644
    Abstract: The present invention relates to a method for providing an arbitrary sound chosen by a subscriber instead of a conventional RBT, more particularly, to a method for providing a caller with an arbitrary sound chosen by the caller instead of an RBT in case that a called is not a subscriber of a called-based RBT replacement service. The present method comprises: a first step, conducted by an exchanger when a call is received from a terminal, of requesting a first trunk connection to other telephone communication network while requesting a second trunk connection to a sound providing means if it is confirmed that the calling terminal has subscribed to RBT replacement service and the called terminal is a subscriber of said other telephone communication network; and a second step, conducted by the sound providing means, of providing the calling terminal with an RBT-replacing sound set for the calling terminal through the exchanger.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: July 4, 2006
    Assignee: SK Telecom Co., Ltd.
    Inventors: Tae Ho Ahn, Yeong Tae No, Ok Ryul Yang, Jin Yong Choi
  • Publication number: 20060143538
    Abstract: A static timing analysis apparatus and method for distributed real-time embedded software is provided. The static timing analysis apparatus includes: a task analyzer analyzing tasks per processor from a source code of real-time embedded software if the source code exists or a design model of a corresponding piece of the real-time embedded software if the source code does not exist; a message analyzer analyzing messages per network from the source code or the design model; a task worst-case response time analyzer analyzing a worst-case response time of each task, which is taken account of a scheduling policy of a corresponding operating system at which said each task is operated, based on the task analysis result for each processor and the message analysis result for each network; and a task real-time analyzer analyzing whether the analyzed worst-case response time of each task exceeds a deadline of the corresponding task.
    Type: Application
    Filed: September 14, 2005
    Publication date: June 29, 2006
    Inventors: Yong Choi, Hyung Lim, Chae Lim
  • Publication number: 20060126082
    Abstract: An image processing apparatus and method are adapted to form an image of an object photographed by a camera at a preset resolution; crop a preset portion from the image; and display the cropped image portion in response to a request from a user. Then, the specific image portion can be zoomed or magnified without degradation of image quality and the zooming power or magnification can be adjusted by cropping and size-adjustment of the specific image portion.
    Type: Application
    Filed: November 23, 2005
    Publication date: June 15, 2006
    Inventor: Kwang-Yong Choi