Patents by Inventor Yong Jeong

Yong Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device providing controlled bulk voltage during programming operations
    Patent number: 7420852
    Abstract: Disclosed is a non-volatile memory device and a method of programming the same. The non-volatile memory device comprises a plurality of memory cells that are programmed by supplying first and second program voltages thereto. In cases where the second program voltage rises above a predetermined detection voltage, the first program voltage is prevented from being supplied to the memory cell until the second program voltage falls below the detection voltage.
    Type: Grant
    Filed: November 3, 2005
    Date of Patent: September 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Yong Jeong, Young-Ho Lim
  • Nonvolatile memory devices capable of reducing data programming time and methods of driving the same
    Publication number: 20080192540
    Abstract: In a method of driving a nonvolatile memory device a first data state is determined from among the plurality of data states. The number of simultaneously programmed bits is set according to the determined first data state and a scanning operation is performed on data input from an external device to search data bits to be programmed. The searched data bits are programmed in response to the number of simultaneously programmed bits. The number of simultaneously programmed bits corresponding to the first data state is different from a number of simultaneously programmed bits corresponding to at least a second of the plurality of data states.
    Type: Application
    Filed: December 27, 2007
    Publication date: August 14, 2008
    Inventors: Jae-Phil Kong, Heung-soo Lim, Jae-yong Jeong, Chi-weon Yoon
  • Organic light emitting display device and method of fabricating the same
    Patent number: 7402944
    Abstract: An organic light emitting display device (OLED) and a method of fabricating the same, in which electric field influence between first and second electrodes is reduced in an edge region of a unit pixel. The OLED includes a substrate, and a thin film transistor (TFT) located on the substrate. A passivation layer is located on the TFT over substantially an entire surface of the substrate, and has a via hole for exposing source or drain electrode, and a groove. A first electrode on the passivation layer is in electrical contact with the exposed source or drain electrode through the via hole, and has an edge located in the groove. A pixel defining layer is located on the first electrode and has an opening for exposing a predetermined portion of the first electrode. An organic layer is in contact with the predetermined portion, and a second electrode is formed on the organic layer.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: July 22, 2008
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Chang-Yong Jeong, Tae-Wook Kang, Chang-Soo Kim
  • Flash memory device having a verify data buffer capable of being employed as a program data buffer, and a method thereof
    Publication number: 20080170443
    Abstract: A flash memory device includes a program data buffer configured to buffer program data to be programmed in a memory cell array, and a verify data buffer configured to compare verify data to confirm whether the program data is accurately programmed in the memory cell array, wherein at least a portion of the verify data buffer is selectively enabled as a verify data buffer or a program data buffer responsive to a buffer control signal.
    Type: Application
    Filed: December 28, 2007
    Publication date: July 17, 2008
    Inventors: Kee-ho Jung, Jae-yong Jeong, Chi-weon Yoon
  • FLASH MEMORY DEVICE WITH WRITE PROTECTION
    Publication number: 20080170436
    Abstract: A flash memory device and a related method of write protecting data are disclosed. The flash memory device includes a protection controller having a latch circuit storing temporary protected/accessible data, a cell array storing persistent protected/accessible data, a write controller altering the persistent protected/accessible data, and a latch controller altering the temporary protected/accessible data.
    Type: Application
    Filed: January 7, 2008
    Publication date: July 17, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Young CHUN, Jae-Yong JEONG, Chi-Weon YOON
  • NON-VOLATILE MEMORY DEVICE AND METHOD CAPABLE OF RE-VERIFYING A VERIFIED MEMORY CELL
    Publication number: 20080158993
    Abstract: A method of driving a non-volatile memory device includes programming a plurality of memory cells based on a first data copied from a program data buffer to a verification data buffer, verifying the memory cells by overwriting a result of the verification of the programmed memory cells to a verification data buffer, and re-verifying the memory cells by repeating the programming and verifying operations at least once with respect to the memory cells that were successfully verified, based on the verification result written to the verification data buffer.
    Type: Application
    Filed: June 15, 2007
    Publication date: July 3, 2008
    Inventors: Kee-Ho Jung, Jae-Yong Jeong, Chi-Weon Yoon
  • FILE SYSTEM, AND METHOD FOR STORING AND SEARCHING FOR FILE BY THE SAME
    Publication number: 20080155171
    Abstract: A file system and a method for file storage and file search by the same are provided. All files have unique names in a block-based storage device, such as a hard disk, a flash memory, etc., so that each file is mapped and stored in a one-dimensional storage area. Each file name is matched with a memory block storing data of the corresponding file so that a memory block corresponding to a file name can be found when the file name is input. In addition, through information stored in the found memory block, the data corresponding to the file name can be read from the memory block storing the data or can be stored in a specific memory block.
    Type: Application
    Filed: December 21, 2007
    Publication date: June 26, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Soon-Yong JEONG
  • FLASH MEMORY DEVICE WITH MULTI LEVEL CELL AND BURST ACCESS METHOD THEREIN
    Publication number: 20080144372
    Abstract: A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
    Type: Application
    Filed: February 21, 2008
    Publication date: June 19, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Woo LEE, Jae-Yong JEONG
  • Flash memory devices that support incremental step-pulse programming using nonuniform verify time intervals
    Publication number: 20080137435
    Abstract: Nonvolatile memory devices support programming and verify operations that improve threshold-voltage distribution within programmed memory cells. This improvement is achieved by reducing a magnitude of the programming voltage steps and increasing a duration of the verify operations once at least one of the plurality of memory cells undergoing programming has been verified as a “passed” memory cell. The nonvolatile memory device includes an array of nonvolatile memory cells and a control circuit, which is electrically coupled to the array of nonvolatile memory cells. The control circuit is configured to perform a plurality of memory programming operations (P) by driving a selected word line in the array with a first stair step sequence of program voltages having first step height (e.g.
    Type: Application
    Filed: February 14, 2008
    Publication date: June 12, 2008
    Inventors: Soo-Han Kim, Jae-Yong Jeong
  • METHOD OF PRE-PROCESSING CONDITIONAL REGION
    Publication number: 20080141228
    Abstract: Provided is a method of pre-processing a conditional region. By analyzing and designating code lines according to the present invention, when a conditional region included in a pre-processing region of an arbitrary file is compiled, the compiling can be efficiently performed, and when the arbitrary file is executed, an execution result can be derived in a short time.
    Type: Application
    Filed: November 20, 2007
    Publication date: June 12, 2008
    Inventor: Soon-Yong JEONG
  • MEMORY AND METHOD FOR DATA COMPRESSION AND MANAGEMENT
    Publication number: 20080133855
    Abstract: A memory and a method for managing data. The memory for compressing and managing data includes a memory unit, wherein the memory unit has a compressed page cache region which includes a plurality of compressed page caches for temporarily storing, compressing and decompressing data; and a compressed page block region which includes a plurality of compressed page blocks for storing compressed data generated through the compression. Since data is stored in the memory after being compressed, it is possible to store much more data. Furthermore, as a great amount of data can be stored at one time, it is possible to minimize a lowering of the data processing speed caused by movement of data between memories.
    Type: Application
    Filed: November 26, 2007
    Publication date: June 5, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon-Yong JEONG, Chang-Woo MIN
  • Non-volatile memory device with scanning circuit and method
    Patent number: 7379372
    Abstract: An accelerated bit scanning nonvolatile memory device and method. A nonvolatile memory device including a memory cell array including a plurality of memory cells, each memory cell corresponding to program data, a data scanning unit to detect the program data having a first value, and a programming unit to program the memory cells corresponding to the detected portions of the program data responsive to the scanning.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: May 27, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jae-Yong Jeong
  • Non-volatile semiconductor memory device having different erase pass voltages for respective memory sectors and associated erase method
    Patent number: 7372733
    Abstract: A non-volatile semiconductor memory device comprises a plurality of memory sectors arranged in different memory banks having different bulk regions. The memory cells can be erased using a first mode erase operation, which determines different erase pass voltages for the respective memory sectors by successively increasing a bank voltage applied to each sector until the number of failed cells in each sector falls below a first failed cell threshold value, and a second mode erase operation, which applies the different erase pass voltages to the respective memory sectors for successively increasing periods of time until the number of failed cells in each sector falls below a second failed cell threshold value.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: May 13, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong In Choi, Jae Yong Jeong
  • Flash memory device with multi level cell and burst access method therein
    Patent number: 7359240
    Abstract: A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: April 15, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Woo Lee, Jae-Yong Jeong
  • Circuit and method for adaptive incremental step-pulse programming in a flash memory device
    Patent number: 7349263
    Abstract: Nonvolatile memory devices support programming and verify operations that improve threshold-voltage distribution within programmed memory cells. This improvement is achieved by reducing a magnitude of the programming voltage steps and increasing a duration of the verify operations once at least one of the plurality of memory cells undergoing programming has been verified as a “passed” memory cell. The nonvolatile memory device includes an array of nonvolatile memory cells and a control circuit, which is electrically coupled to the array of nonvolatile memory cells. The control circuit is configured to perform a plurality of memory programming operations (P) by driving a selected word line in the array with a first stair step sequence of program voltages having first step height (e.g.
    Type: Grant
    Filed: May 2, 2006
    Date of Patent: March 25, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-Han Kim, Jae-Yong Jeong
  • METHOD AND APPARATUS FOR PROGRAMMING MULTI LEVEL CELL FLASH MEMORY DEVICE
    Publication number: 20080068885
    Abstract: A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.
    Type: Application
    Filed: November 28, 2007
    Publication date: March 20, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Phil KONG, Jae-Yong JEONG
  • FLASH MEMORY DEVICE AND METHOD FOR PROGRAMMING MULTI-LEVEL CELLS IN THE SAME
    Publication number: 20080055998
    Abstract: In one aspect, a program method is provided for a flash memory device including a plurality of memory cells each being programmed in one of a plurality of data states. The program method of this aspect includes programming selected memory cells in a first data state, verifying a result of the programming, successively programming selected memory cells in at least two or more data states corresponding to threshold voltages which are lower than a threshold voltage corresponding to the first data state, and verifying results of the successive programming.
    Type: Application
    Filed: August 30, 2007
    Publication date: March 6, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kee-Ho Jung, Jae-Yong Jeong, Chi-Weon Yoon
  • Flash memory device and method for programming multi-level cells in the same
    Publication number: 20080056006
    Abstract: A method for programming a flash memory device is provided, where the flash memory device includes a plurality of memory cells, and where a threshold voltage of each of the memory cells is programmable in any one of plural corresponding data states.
    Type: Application
    Filed: December 21, 2006
    Publication date: March 6, 2008
    Inventors: Kee-Ho Jung, Jae-Yong Jeong, Chi-Weon Yoon
  • CATHODE MATERIAL CONTAINING TWO TYPES OF CONDUCTIVE MATERIALS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME
    Publication number: 20080050655
    Abstract: Provided is a cathode mix for a lithium secondary battery, comprising a cathode active material, a conductive material and a binder, wherein the cathode mix uses a mixture of a flake-like carbon material (a), and a spherical chain-like carbon material (b) in a weight ratio (a/b) of 0.01 to 1 as the conductive material; and a lithium secondary battery comprising the same. Use of the conductive material according to the present invention can achieve simultaneous improvements in conductivity and loading density of the cathode mix, provide excellent discharge characteristics even with increased loading amounts of the cathode mix, and secure performance uniformity between the battery cells.
    Type: Application
    Filed: July 12, 2007
    Publication date: February 28, 2008
    Applicant: LG CHEM, LTD.
    Inventors: Seung Woo CHU, Sung-Pil YOON, Dohyun LEE, Dongmyung KIM, Joo-Hwan SUNG, Yong Jeong KIM, Hyungook YOON, Jong Hee KIM
  • NON-VOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING SAME
    Publication number: 20080043536
    Abstract: Disclosed are a non-volatile memory device and a method of programming the same. The method comprises applying a wordline voltage, a bitline voltage, and a bulk voltage to a memory cell during a plurality of program loops. In cases where the bitline voltage falls below a first predetermined detection voltage during a current program loop, or the bulk voltage becomes higher than a second predetermined detection voltage, the same wordline voltage is used in the current programming loop and a next program loop following the current program loop. Otherwise, the wordline voltage is incremented by a predetermined amount before the next programming loop.
    Type: Application
    Filed: September 14, 2007
    Publication date: February 21, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Yong JEONG, Heung-Soo LIM