METHOD TO FABRICATE HIGH PERFORMANCE CARBON NANOTUBE TRANSISTOR INTEGRATED CIRCUITS BY THREE-DIMENSIONAL INTEGRATION TECHNOLOGY
Techniques for fabricating carbon nanotube-based devices are provided. In one aspect, a method for fabricating a carbon nanotube-based integrated circuit is provided. The method comprises the following steps. A first wafer comprising carbon nanotubes is provided. A second wafer comprising one or more device elements is provided. One or more of the carbon nanotubes are connected with one or more of the device elements by bonding the first wafer and the second wafer together. A carbon nanotube-based integrated circuit is also provided.
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The present invention relates to carbon nanotube technology and more particularly, to techniques for fabricating carbon nanotube-based devices.
BACKGROUND OF THE INVENTIONCarbon nanotubes possess extraordinary electronic properties that are attractive for high-speed and high-performance circuits. One of the major challenges in utilizing devices and complex circuits involving carbon nanotubes lies in the incompatibility of the carbon nanotube growth conditions and the process limitation of current complementary metal-oxide-semiconductor (CMOS) technology. For example, chemical vapor deposition (CVD) grown carbon nanotubes require a growth condition of at least 600° C. for producing high quality nanotubes, which exceeds the temperature capacity of about 350° C. to about 400° C. for CMOS processes.
One possible solution to work around this temperature limitation is to deposit preformed carbon nanotubes on the substrate from a solution. However, during the subsequent processing, the deposited carbon nanotubes may be destroyed via oxidation and the properties of the carbon nanotubes may also be altered due to surface treatments.
Another practical challenge of realizing integrated circuits based on carbon nanotubes is the alignment of carbon nanotubes with the rest of the circuit components. While there has been much progress in controlling the growth orientation and/or the deposition location of nanotubes, their alignment with the rest of the circuits has not been addressed.
Therefore, techniques for three-dimensional carbon nanotube-based integrated circuit device integration would be desirable.
SUMMARY OF THE INVENTIONThe present invention provides techniques for fabricating carbon nanotube-based devices. In one aspect of the invention, a method for fabricating a carbon nanotube-based integrated circuit is provided. The method comprises the following steps. A first wafer comprising carbon nanotubes is provided. A second wafer comprising one or more device elements is provided. One or more of the carbon nanotubes are connected with one or more of the device elements by bonding the first wafer and the second wafer together.
The carbon nanotubes can be deposited on a first substrate. A first oxide layer can be deposited onto the substrate covering the carbon nanotubes. One or more first electrodes can be formed that extend at least part way through the first oxide layer and are in contact with one or more of the carbon nanotubes. One or more device elements can be fabricated on a second substrate. A second oxide layer can be deposited over the device elements. One or more second electrodes can be formed that extend at least part way through the second oxide layer connected to one or more of the device elements.
In another aspect of the invention, a carbon nanotube-based integrated circuit is provided. The carbon nanotube-based integrated circuit includes a first wafer comprising carbon nanotubes; and a second wafer comprising one or more device elements, wherein the first wafer is bonded to the second wafer such that one or more of the carbon nanotubes are connected with one or more of the device elements.
A more complete understanding of the present invention, as well as further features and advantages of the present invention, will be obtained by reference to the following detailed description and drawings.
In order to successfully use carbon nanotubes as active elements in a practical device and/or circuit, a new fabrication scheme is required to combine existing complementary metal-oxide-semiconductor (CMOS) technology and the carbon nanotubes. The present teachings provide such a fabrication scheme.
Three-dimensional integration has become a very promising candidate to fulfill packaging and integrated circuit (IC) technology gaps for carbon nanotube-based electronics. The ability to stack CMOS state-of-the-art active device layers has been demonstrated. Three-dimensional integration technology can increase system performance even in the absence of scaling. Specifically, three-dimensional integration offers decreased total wiring length (and thus reduced interconnect delay times), a dramatically increased number of interconnects between chips and the ability to allow dissimilar materials, process technologies and functions to be successfully integrated. In addition, it has been noted that in carbon nanotube-based circuits, system performance is drastically affected by the parasitic capacitance and the resistance of interconnects.
As shown in
For applications where carbon nanotubes are used as active components in the circuit, such as transistor channels, semiconducting nanotubes are needed. In practice, a mixture of semiconducting and metallic carbon nanotubes is generally attained. In this instance, carbon nanotube films with a high purity (greater than 99 percent (%)) of semiconducting nanotubes deposited from purified nanotube solutions are used. The term purity as used herein refers to a ratio between semiconducting and metallic carbon nanotubes. Methods to separate metallic from semiconducting carbon nanotubes in a solution are well-known to those of skill in the art. In one example, the buoyant density difference between metallic and semiconducting nanotubes in aqueous solutions after functionalizing with proper surfactants, such as sodium cholate, could be utilized to separate the two type of nanotubes with ultracentrifugation. Solutions containing high purity (greater than 99.9%) of semiconducting carbon nanotubes can be prepared by this approach.
A top view (from vantage point A) of the carbon nanotube wafer is shown in
As shown in
As shown in
As shown in
As shown in
As shown in
The device wafer is then provided. As shown in
Next, one or more electrodes 130 are formed in oxide layer 126 in contact with metal layers 128 (metal layers 128 connect device elements 118 with electrodes 130). Electrodes 130 form source/drain/gate electrodes to device elements 118 and comprise Cu. An exemplary configuration of source (S)/drain (D)/gate (G) electrodes is shown labeled in
As shown in
After the two wafers are bonded together, the next step is the substrate removal process. Since now there are two substrates from two wafers after the bonding, the choice of which substrate to remove relies on the design of circuits (i.e., to permit the fabrication of additional layers of the structure). In
In
An additional device layer(s) or a next metal layer Mn can be fabricated on the bonded wafer structure. The surface on which the fabrication takes place can depend on which substrate was removed above. Specifically, if substrate 120 has been removed (see
In conclusion, the present techniques offer a successful and easily-implemented solution to three-dimensional carbon nanotube-based IC device integration. Advantages of the present techniques include, but are not limited to, (1) carbon nanotubes can be prepared by a wide range of different approaches, including but not limited to CVD grown nanotubes, nanotubes from solution deposition, nanotube thin films, (2) complex circuits can be pre-fabricated in standard clean-room facilities without the potential contamination from carbon nanotubes and metal catalysts, (3) the alignment in the wafer bonding process ensures the nanotubes are always incorporated at the desirable positions of the circuit, (4) the requirements of existing CMOS devices, such as temperature, wet etching environment, gas ambient during process, still can be kept since nanotubes are fabricated separately on another wafer and (5) the circuit delay time, which is dominated by interconnects in the case of carbon nanotube circuits, can be significantly reduced.
Although illustrative embodiments of the present invention have been described herein, it is to be understood that the invention is not limited to those precise embodiments, and that various other changes and modifications may be made by one skilled in the art without departing from the scope of the invention.
Claims
1. A method for fabricating a carbon nanotube-based integrated circuit, comprising the steps of:
- providing a first wafer comprising carbon nanotubes which is formed by depositing the carbon nanotubes on a first substrate, depositing a first oxide layer onto the substrate covering the carbon nanotubes, and forming one or more first electrodes that extend at least part way through the first oxide layer and are in contact with one or more of the carbon nanotubes;
- providing a second wafer comprising one or more device elements which is formed by fabricating the device elements on a second substrate, depositing a second oxide layer over the device elements, and forming one or more second electrodes that extend at least part way through the second oxide layer connected to one or more of the device elements; and
- connecting one or more of the carbon nanotubes with one or more of the device elements by bonding the first wafer and the second wafer together.
2. (canceled)
3. The method of claim 1, further comprising the step of:
- forming one or more metal layers in the second oxide layer in contact with the device elements.
4. The method of claim 1, wherein both the first electrodes and the second electrodes comprise copper and wherein the step of connecting the carbon nanotubes with the device elements further comprises the steps of forming an oxide-to-oxide bond between the first oxide layer and the second oxide layer; and
- forming a copper-to-copper bond between the first electrodes and the second electrodes.
5. The method of claim 1, wherein the first substrate comprises an oxide covered substrate.
6. The method of claim 1, wherein the second substrate comprises a silicon-on-insulator substrate.
7. The method of claim 1, wherein the carbon nanotubes are deposited on the first substrate using chemical vapor deposition.
8. The method of claim 1, wherein the carbon nanotubes are deposited on the first substrate from a solution.
9. The method of claim 1, wherein the carbon nanotubes comprise a mixture of semiconducting and metallic carbon nanotubes and wherein the mixture contains greater than 99 percent semiconducting carbon nanotubes.
10. The method of claim 1, further comprising the steps of;
- forming vias through the first oxide layer that expose regions of the carbon nanotubes;
- depositing a first metal layer that lines the exposed regions of the carbon nanotubes; and
- depositing a second metal layer over the first metal layer and filling the vias.
11. The method of claim 10, wherein the step of forming the vias through the first oxide layer further comprises the steps of:
- depositing a mask layer over the first oxide layer;
- patterning the mask layer with a footprint and location of each of the vias;
- etching the first oxide layer through the patterned mask layer to form the vias; and
- removing the mask layer.
12. The method of claim 11, wherein the step of etching the first oxide layer through the patterned mask layer to form the vias is performed using a wet etch process.
13. The method of claim 10, wherein the first metal layer comprises palladium.
14. The method of claim 10, wherein the first metal layer has a thickness of from about 1 nanometer to about 100 nanometers.
15. The method of claim 10, wherein the second metal layer comprises copper.
16. The method of claim 10, further comprising the steps of:
- thinning the second metal layer.
17. The method of claim 16, wherein the second metal layer is thinned using chemical mechanical polishing.
18. The method of claim 1, further comprising the step of:
- flipping one of the first wafer or the second wafer to permit face-to-face bonding between the first wafer and the second wafer.
19. The method of claim 1 2, further comprising the step of:
- thinning one of the first substrate or the second substrate.
20. A carbon nanotube-based integrated circuit, comprising:
- a first wafer comprising carbon nanotubes having a first substrate on which the carbon nanotubes are disposed, a first oxide layer covering the carbon nanotubes, and one or more first electrodes that extend at least part way through the first oxide layer and are in contact with one or more of the carbon nanotubes; and
- a second wafer comprising one or more device elements having a second substrate on which the device elements are fabricated, a second oxide layer over the device elements, and one or more second electrodes that extend at least part way through the second oxide layer connected to one or more of the device elements, wherein the first wafer is bonded to the second wafer such that one or more of the carbon nanotubes are connected with one or more of the device elements.
21. (canceled)
22. The carbon nanotube-based integrated circuit of claim 20, wherein the second wafer further comprises:
- one or more metal layers in the second oxide layer in contact with the device elements.
23. The carbon nanotube-based integrated circuit of claim 20 2, wherein both the first electrodes and the second electrodes comprise copper and wherein the carbon nanotubes are connected with one or more of the device elements by way of an oxide-to-oxide bond between the first oxide layer and the second oxide layer, and a copper-to-copper bond between the first electrodes and the second electrodes.
24. The carbon nanotube-based integrated circuit of claim 20 2, wherein the first substrate comprises an oxide covered substrate.
25. The carbon nanotube-based integrated circuit of claim 20 2, wherein the second substrate comprises a silicon-on-insulator substrate.
Type: Application
Filed: Jul 7, 2010
Publication Date: May 16, 2013
Applicant: International Business Machines Corporation (Armonk, NY)
Inventors: Phaedon Avouris (Yorktown Heights, NY), Kuan-Neng Chen (Hsinchu City), Yu-Ming Lin (West Harrison, NY)
Application Number: 12/831,656
International Classification: H01L 21/768 (20060101); H01L 23/482 (20060101); H01L 21/50 (20060101);