Bond pad structure
Bond pad structures are presented. Some embodiments of the structure include a conductive conductor-insulator layer overlying a substrate. The conductive conductor-insulator layer includes a composite region having a conductor sub-region and insulator sub-region, which neighbor each other, and a single material region. The insulator is harder than the conductor.
Latest Taiwan Semiconductor Manufacturing Co., Ltd. Patents:
- Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions
- Resistive random access memory device
- Air gaps in memory array structures
- Methods of forming interconnect structures in semiconductor fabrication
- Source/drain contact having a protruding segment
The invention relates generally to a semiconductor device, and more specifically to a bond pad structure overlying a substrate.
When the wafer fabricating process is complete, a wafer probing process is performed to test functions of the substrate 100. In
In
When the substrate 100 is packaged, the corrosive layer 172 often further negatively affect the yield of the packaging process or reliability of the complete package. In
Embodiments of the invention provide a bond pad structure that limits damage during probing of the bond pad structure.
Embodiments of the invention further provide effective contrast between a bond pad structure and a neighboring area, such as a passivation layer, to limit damage when probing the bond pad structure.
Embodiments of the invention provide bond pad structures. An embodiment of the structure comprises a conductive conductor-insulator composite layer overlying a substrate. The conductive conductor-insulator composite layer comprises a composite region and a single material region that neighbors the composite region. The composite region has a conductor sub-region and insulator sub-region, which neighbor each other. Further, the insulator is harder than the conductor.
The invention can be more fully understood by reading the subsequent detailed description in conjunction with the examples and references made to the accompanying drawings, which are given by way of illustration only, and thus are not limitative of the invention, and wherein:
The following embodiments are intended to illustrate the invention more fully without limiting the scope of the claims, since numerous modifications and variations will be apparent to those skilled in the art.
In
The conductor-insulator composite layer 410 is preferably a copper layer 412 comprising a slot 414. The slot 414 comprises a silicon oxide layer 416 therein in the composite region 419. The single material region 415 is a slotless region of copper. Composite region 419 is a slotted region.
In
In
In
In
Further, in
Two layouts of the conductor-insulator composite layer 410 in this embodiment are disclosed as examples here, and are not intended to limit the invention. Modifications to the subsequent layouts will be apparent to those skilled in the art.
In
In
In
The conductor-insulator composite layer 610 is preferably a silicon oxide layer 616 comprising a slot 614, comprising a copper layer 612 therein, in the composite region 619. The single material region 615 is a slotless region of silicon oxide. The composite region 619 is a slotted region.
In
In
In
In
Further, in
Two layouts of the conductor-insulator composite layer 610 are disclosed here as examples, and are not intended to limit the invention. It will be obvious to those skilled in the art to modify the subsequent layouts.
In
In
While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. It is therefore intended that the following claims be interpreted as covering all such alteration and modifications as fall within the true spirit and scope of the invention.
Claims
1. A bond pad structure comprising:
- a conductive conductor-insulator composite layer overlying a substrate, the conductive conductor-insulator composite layer comprising:
- a composite region having a conductor sub-region and insulator sub-region, the conductor sub-region and the insulator sub-region neighboring each other; and
- a single material region neighboring the composite region;
- wherein the insulator of the conductive conductor-insulator composite layer is harder than the conductor of the conductive conductor-insulator composite layer; and
- the conductive conductor-insulator composite layer is a conductor comprising a slot in the composite region, the slot comprising an insulator therein.
2. The structure as claimed in claim 1, wherein the conductor comprises copper.
3. The structure as claimed in claim 1, wherein the insulator comprises silicon oxide.
4. The structure as claimed in claim 1, wherein the composite region is approximately at the center of the conductive conductor-insulator composite layer.
5. The structure as claimed in claim 1, wherein the single material region is in the periphery of the conductive conductor-insulator composite layer.
6. The structure as claimed in claim 1, further comprising a metal layer overlying the conductive conductor-insulator composite layer.
7. The structure as claimed in claim 6, wherein the metal layer comprises an aluminum-copper alloy layer.
8. The structure as claimed in claim 6, further comprising a barrier layer between the conductive conductor-insulator composite layer and metal layer.
9. The structure as claimed in claim 8, wherein the barrier layer comprises a TaN layer.
10. A bond pad structure comprising:
- a copper layer overlying a substrate, the copper layer comprising:
- a slotted region having a slot, the slot having an insulator layer therein, the insulator layer being harder than the copper layer; and
- a slotless region around the slotted region.
11. The structure as claimed in claim 10, wherein the insulator layer comprises silicon oxide.
12. The structure as claimed in claim 10, further comprising an aluminum-copper alloy layer overlying the copper layer.
13. The structure as claimed in claim 12, further comprising a TaN layer between the copper layer and aluminum-copper alloy layer.
14. A bond pad structure, comprising: wherein the conductive copper-insulator composite layer is copper, the conductive copper-insulator composite layer having a slot in the composite region, the slot having the insulator therein.
- a substrate;
- a conductive copper-insulator composite layer overlying the substrate; and
- a metal layer overlying the conductive copper-insulator composite layer;
- wherein the insulator of the conductive copper-insulator composite layer is harder than copper of the conductive copper-insulator composite layer, and wherein the conductive copper-insulator composite layer further comprises:
- a composite region having a copper sub-region and an insulator sub-region, the copper sub-region and the insulator sub-region neighboring each other; and
- a single material region neighboring the composite region;
15. The structure as claimed in claim 14, wherein the insulator comprises silicon oxide.
16. The structure as claimed in claim 14, wherein the conductive copper-insulator composite layer comprises a copper sub-region and insulator sub-region, the copper sub-region and the insulator sub-region neighboring each other.
17. The structure as claimed in claim 14, wherein the conductive copper-insulator composite layer is a copper-based layer, the copper-based layer having a slot, the slot having the insulator therein.
18. The structure as claimed in claim 14, wherein the composite region is approximately at the center of the conductive conductor-insulator composite layer.
19. The structure as claimed in claim 14, wherein the single material region is at the perphery of the conductive conductor-insulator composite layer.
20. The structure as claimed in claim 14, wherein the metal layer comprises an aluminum-copper alloy layer.
21. The structure as claimed in claim 14, further comprising a barrier layer between the conductive copper-insulator composite layer and the metal layer.
22. The structure as claimed in claim 21, wherein the barrier layer comprises a TaN layer.
23. The structure as claimed in claim 14, wherein the conductive copper-insulator composite layer is the insulator, the copper-insulator composite layer having a slot in the composite region, the slot having copper therein.
5923088 | July 13, 1999 | Shiue et al. |
6236494 | May 22, 2001 | Onoe et al. |
6417087 | July 9, 2002 | Chittipeddi et al. |
6531384 | March 11, 2003 | Kobayashi et al. |
7169694 | January 30, 2007 | Pozder et al. |
20050093176 | May 5, 2005 | Hung et al. |
- CN Office Action mailed Nov. 19, 2007.
Type: Grant
Filed: Sep 27, 2005
Date of Patent: Sep 30, 2008
Patent Publication Number: 20070090402
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd. (Hsin-Chu)
Inventors: Wen-Tsai Su (Miaoli Hsien), Chin-Chi Shen (Hsinchu), Ming-Jer Chiu (Hsinchu), Chih-Chiang Chen (Ilan Hsien)
Primary Examiner: Roy K Potter
Attorney: Thomas, Kayden, Horstemeyer & Risley
Application Number: 11/236,217
International Classification: H01L 23/48 (20060101);