Leadframe based multi terminal IC package
A semiconductor package comprises a die attach pad and a support member at least partially circumscribing it. Several sets of contact pads are attached to the support member. The support member is able to be etched away thereby electrically isolating the contact pads. A method for making a leadframe and subsequently a semiconductor package comprises partially etching desired features into a copper substrate, and then through etching the substrate to form the support member and several sets of contact pads. Die attach, wirebonding and molding follow. The support member is etched away, electrically isolating the contact pads and leaving a groove in the bottom of the package. The groove is able to be filled with epoxy or mold compound.
Latest UTAC Thai Limited Patents:
This application claims benefit of priority under 35 U.S.C. section 119(e) of the co-pending U.S. Provisional Patent Application Ser. No. 61/313,009 filed Mar. 11, 2010, entitled “LEADFRAME MULTI TERMINAL IC PACKAGE,” which is hereby incorporated by reference in its entirety.
FIELD OF THE INVENTIONThe present invention is related to the field of semiconductor device manufacturing. More specifically, the present invention relates to leadframes for stabilizing wire bond placement and avoiding bent leads.
BACKGROUNDIn general, multiterminal integrated circuit (IC) packages are formed from a copper substrate.
In a first aspect of the invention, a semiconductor package comprises a die attach pad, a first set of contact pads surrounding the die attach pad, a groove at least partially circumscribing the first row of contact pads, and a second set of contact pads surrounding the groove. Generally, the semiconductor package further comprises at least one semiconductor die mounted on the die attach pad and a plurality of bondwires for electrically coupling the at least one semiconductor die to at least one contact pad. Preferably, the bottom surface of the semiconductor package is substantially planar except for the groove. The groove defines a channel that substantially encompasses the first row of contact pads. The first set of contact pads generally surrounds the die attach pad and is bounded by the groove. In some embodiments, the second set of contact pads surrounds the groove and is bounded by the perimeter of the semiconductor package. In some embodiments, the bottom surface of the die attach pad and bottom surfaces of the contact pads define the substantially planar bottom surface of the package. The first and second set of contact pads are able to be offset from the groove or exposed by the groove. In some embodiments, the groove comprises an epoxy filler.
In some embodiments, the package further comprises a third set of contact pads between the first set of contact pads and the die attach pad. The third set of contact pads surrounds the die attach pad and is bounded by the first set of contact pads, the groove, and the second set of contact pads. Also, the package is able to have a fourth set of contact pads around the second set of contact pads. The fourth set of contact pads surrounds the die attach pad, the first set of contact pads, the groove, and the second set of contact pads and is bounded by the perimeter of the semiconductor package.
In another aspect of the invention, a method of making a semiconductor package comprises etching a through pattern in a metal substrate, thereby forming a die attach pad, a first set of contact pads surrounding the die attach pad and a second set of contact pads surrounding the first set of contact pads, wherein the first and the second set of contact pads are coupled with a support member. Then at least one semiconductor die is mounted on the die attach pad and bondwires electrically couple the at least one semiconductor die to at least one contact pad. Then, the semiconductor die, bondwires and contact pads are at least partially encased in a mold compound while leaving one surface of the metal substrate exposed. After, the support member is etched away, thereby electrically isolating the first and second set of contact pads with respect to each other. The groove formed by etching away the support member is able to be filled with an epoxy. In some embodiments, etching a through pattern in a metal substrate further comprises forming a third set of contact pads, the third set of contact pads surrounding the die attach pad. The third set of contact pads is able to be bounded by the first set of contact pads, the groove, the second set of contact pads and the perimeter of the package.
In another aspect of the device, a leadframe for supporting a semiconductor device, comprises a die attach pad a first set of contact pads surrounding the die attach pad, a support member at least partially circumscribing the first set of contact pads, a second set of contact pads around he support member, and an outer perimeter. At least one of the first set of contacts and the second set of contacts is anchored to the support member. Preferably, the bottom surface of the leadframe is coated with an etch resist material except for the support member to allow for the support member to be etched away thereby electrically isolating the sets of contacts with respect to each other. In some embodiments, the leadframe further comprises a third set of contacts around the die attach pad. The third set of contacts is able to be anchored to the die attach pad or the support member. The third set of contacts is bounded by the first set of contacts, the support member, and the perimeter. The leadframe is also able to comprise a fourth set of contacts around the second set of contacts. The fourth set of contacts surrounds the first, second, and third set of contacts as well as the support member. The fourth set of contacts are able to be anchored to the support member or the perimeter. As a result, when the support member is etched away, any sets of contacts anchored to it are electrically isolated with respect to each other. In embodiments where the fourth set of contacts is anchored to the perimeter, the fourth set of contacts is electrically isolated during singulation.
Advantageously, the semiconductor package described above, utilizing the method and leadframe disclosed is able to be manufactured in fewer etching steps than what is disclosed by the prior art.
The novel features of the invention are set forth in the appended claims. However, for purpose of explanation, several embodiments of the invention are set forth in the following figures.
In the following description, numerous details are set forth for purposes of explanation. However, one of ordinary skill in the art will realize that the invention can be practiced without the use of these specific details. Thus, the present invention is not intended to be limited to the embodiments shown but is to be accorded the widest scope consistent with the principles and features described herein or with equivalent alternatives. Reference will now be made in detail to implementations of the present invention as illustrated in the accompanying drawings. The same reference indicators will be used throughout the drawings and the following detailed description to refer to the same or like parts. The person of ordinary skill having the benefit of this disclosure will readily appreciate that elements from the several drawings are interchangeable between the embodiments shown and described.
In general, the invention described below effectuates the manufacture of high density, multi row leadframes and semiconductor packages in fewer process steps; specifically using fewer etching steps. It is well known that the semiconductor industry is extremely cost driven and fewer processing steps leads to higher throughput and lower cost.
Preferably, the leadframe 200 has been through-etched to reveal several structures thereon, and leave behind a completely etched away portion 208. Each individual unit 200A, 200B, 200C, and 200D comprises a die attach pad 206. The die attach pad 206 is configured to support an eventual semiconductor die that will be mounted thereto. On a top surface, the die attach pad 206 is exposed copper. On a bottom side, the die attach pad is preferably coated with an etch resist material. Surrounding each die attach pad 206 is a first set of contact pads 202. The first set of contact pads 202 are preferably anchored to a support member 209 that at least partially circumscribes the die attach pad 206. The support member 209 is anchored to the die attach pad 206 by cross members 209A-209D. In some embodiments, the cross members 209A-209D are substantially co-planar with the support member 209. Alternatively, the cross members 209A-209D are raised with respect to the support member 209. Preferably, the first set of contact pads 202 are anchored to the support member 209. The first set of contact pads 202 surrounds the die attach pad 206 and is bounded by the support member 209. The leadframe 200 further comprises a second set of contact pads 203. The second set of contact pads 203 is preferably anchored to the support member 209. The second set of contact pads 203 surrounds the support member 209 and is bounded by the frame 201 or another individual unit 200A-200D. Preferably, the second set of contact pads 203 is anchored to the support member 209.
In some embodiments, the leadframe 200 further comprises a third set of contacts 204. The third set of contacts 204 surrounds the die attach pad 206 and is bounded by the first set of contact pads 202, support member 209, second set of contacts 203 and the frame 201. The third set of contacts 204 is able to be anchored to the support member 209. In order to offset the third set of contacts 204 from the first set of contacts 202 while maintaining their position between the die attach pad 206 and the first set of contacts 202, the third set of contacts 204 are anchored to the support member 209 by anchor bars 204A. Preferably, the anchor bars 204A are elevated with respect to the support member 209. Advantageously, in a later processing step when the support member 209 is sacrificed, the anchor bars 204A will be elevated with respect to the bottom surface of a resulting semiconductor package.
In some embodiments, the leadframe 200 further comprises a fourth set of contacts 205. The fourth set of contacts 205 surrounds the die attach pad 206, first set of contacts 202, third set of contacts 204, the support member 209, and the second set of contact 203. The fourth set of contacts 205 is bounded by the frame 201. In the example shown in
While the invention has been described with reference to numerous specific details, one of ordinary skill in the art will recognize that the invention can be embodied in other specific forms without departing from the spirit of the invention. Thus, one of ordinary skill in the art will understand that the invention is not to be limited by the foregoing illustrative details, but rather is to be defined by the appended claims.
Claims
1. A semiconductor package comprising:
- a. a die attach pad;
- b. at least one semiconductor die coupled with the die attach pad;
- c. a first set of contact pads surrounding the die attach pad;
- d. a groove at least partially circumscribing the first set of contact pads;
- e. a second set of contact pads surrounding the groove;
- f. a third set of contact pads between the first set of contact pads and the die attach pad, wherein each contact pad of the third set of contact pads includes a portion of an anchor bar abutting the groove;
- g. a plurality of bondwires for electrically coupling the die to at least one contact pad;
- h. an encapsulant encasing the at least one semiconductor die and the plurality of bondwires; and
- i. a filler substance separate from the encapsulant, the filler substance disposed within the groove.
2. The semiconductor package of claim 1, wherein a bottom surface of the semiconductor package is substantially planar except for the groove.
3. The semiconductor package of claim 1, wherein a bottom surface of the die attach pad and bottom surfaces of the contact pads define the substantially planar bottom surface of the package.
4. The semiconductor package of claim 1, wherein the groove comprises an epoxy filler.
5. The semiconductor package of claim 1, wherein the second set of contact pads does not contact an edge of the groove.
6. The semiconductor package of claim 1, wherein the first set of contact pads does not contact an edge of the groove.
7. The semiconductor package of claim 1, further comprising a fourth set of contact pads surrounding the second set of contact pads.
8. The semiconductor package of claim 1, wherein the first set of contact pads and the second set of contact pads are staggered.
9. The semiconductor package of claim 1, wherein each contact pad of the first set of contact pads includes a first member extending away from the die attach pad, and wherein the each contact pad of the second set of contact pads includes a second member extending towards the die attach pad.
10. The semiconductor package of claim 1, wherein the filler substance disposed within the groove is flush with a bottom surface of the encapsulant.
11. The semiconductor package of claim 7, wherein each contact pad of the fourth set of contact pads includes a portion of an anchor bar abutting the groove.
3611061 | October 1971 | Segerson |
4411719 | October 25, 1983 | Lindberg |
4501960 | February 26, 1985 | Jouvet et al. |
4801561 | January 31, 1989 | Sankhagowit |
4855672 | August 8, 1989 | Shreeve |
5105259 | April 14, 1992 | McShane et al. |
5195023 | March 16, 1993 | Manzione et al. |
5247248 | September 21, 1993 | Fukunaga |
5248075 | September 28, 1993 | Young et al. |
5281851 | January 25, 1994 | Mills et al. |
5343076 | August 30, 1994 | Katayama et al. |
5396185 | March 7, 1995 | Honma et al. |
5397921 | March 14, 1995 | Karnezos |
5479105 | December 26, 1995 | Kim et al. |
5535101 | July 9, 1996 | Miles et al. |
5596231 | January 21, 1997 | Combs |
5843808 | December 1, 1998 | Karnezos |
5990692 | November 23, 1999 | Jeong et al. |
6072239 | June 6, 2000 | Yoneda et al. |
6111324 | August 29, 2000 | Sheppard et al. |
6159770 | December 12, 2000 | Tetaka et al. |
6177729 | January 23, 2001 | Benenati et al. |
6197615 | March 6, 2001 | Song et al. |
6208020 | March 27, 2001 | Minamio et al. |
6229200 | May 8, 2001 | Mclellan et al. |
6242281 | June 5, 2001 | Mclellan et al. |
6250841 | June 26, 2001 | Ledingham |
6284569 | September 4, 2001 | Sheppard et al. |
6285075 | September 4, 2001 | Combs et al. |
6294100 | September 25, 2001 | Fan et al. |
6304000 | October 16, 2001 | Isshiki et al. |
6326678 | December 4, 2001 | Karnezos et al. |
6329711 | December 11, 2001 | Kawahara et al. |
6353263 | March 5, 2002 | Dotta et al. |
6372625 | April 16, 2002 | Shigeno et al. |
6376921 | April 23, 2002 | Yoneda et al. |
6392427 | May 21, 2002 | Yang |
6414385 | July 2, 2002 | Huang et al. |
6429048 | August 6, 2002 | McLellan et al. |
6451709 | September 17, 2002 | Hembree |
6455348 | September 24, 2002 | Yamaguchi |
6489218 | December 3, 2002 | Kim et al. |
6498099 | December 24, 2002 | McLellan et al. |
6507116 | January 14, 2003 | Caletka et al. |
6545332 | April 8, 2003 | Huang |
6545347 | April 8, 2003 | McClellan |
6552417 | April 22, 2003 | Combs |
6552423 | April 22, 2003 | Song et al. |
6566740 | May 20, 2003 | Yasunaga et al. |
6573121 | June 3, 2003 | Yoneda et al. |
6585905 | July 1, 2003 | Fan et al. |
6586834 | July 1, 2003 | Sze et al. |
6635957 | October 21, 2003 | Kwan et al. |
6667191 | December 23, 2003 | McLellan et al. |
6683368 | January 27, 2004 | Mostafazadeh |
6686667 | February 3, 2004 | Chen et al. |
6703696 | March 9, 2004 | Ikenaga et al. |
6723585 | April 20, 2004 | Tu et al. |
6724071 | April 20, 2004 | Combs |
6734044 | May 11, 2004 | Lin et al. |
6734552 | May 11, 2004 | Combs et al. |
6737755 | May 18, 2004 | McLellan et al. |
6764880 | July 20, 2004 | Wu et al. |
6781242 | August 24, 2004 | Fan et al. |
6800948 | October 5, 2004 | Fan et al. |
6812552 | November 2, 2004 | Islam et al. |
6818472 | November 16, 2004 | Fan et al. |
6818978 | November 16, 2004 | Fan |
6818980 | November 16, 2004 | Pedron, Jr. |
6841859 | January 11, 2005 | Thamby et al. |
6876066 | April 5, 2005 | Fee et al. |
6893169 | May 17, 2005 | Exposito et al. |
6894376 | May 17, 2005 | Mostafazadeh et al. |
6897428 | May 24, 2005 | Minamio et al. |
6927483 | August 9, 2005 | Lee et al. |
6933176 | August 23, 2005 | Kirloskar et al. |
6933594 | August 23, 2005 | McLellan et al. |
6940154 | September 6, 2005 | Pedron et al. |
6946324 | September 20, 2005 | McLellan et al. |
6964918 | November 15, 2005 | Fan et al. |
6967126 | November 22, 2005 | Lee et al. |
6979594 | December 27, 2005 | Fan et al. |
6982491 | January 3, 2006 | Fan et al. |
6984785 | January 10, 2006 | Diao et al. |
6989294 | January 24, 2006 | McLellan et al. |
6995460 | February 7, 2006 | McLellan et al. |
7008825 | March 7, 2006 | Bancod et al. |
7009286 | March 7, 2006 | Kirloskar et al. |
7045883 | May 16, 2006 | McCann et al. |
7049177 | May 23, 2006 | Fan et al. |
7052935 | May 30, 2006 | Pai et al. |
7060535 | June 13, 2006 | Sirinorakul et al. |
7071545 | July 4, 2006 | Patel et al. |
7091581 | August 15, 2006 | McLellan et al. |
7101210 | September 5, 2006 | Lin et al. |
7102210 | September 5, 2006 | Ichikawa |
7125747 | October 24, 2006 | Lee et al. |
7205178 | April 17, 2007 | Shiu et al. |
7224048 | May 29, 2007 | McLellan et al. |
7247526 | July 24, 2007 | Fan et al. |
7253503 | August 7, 2007 | Fusaro et al. |
7259678 | August 21, 2007 | Brown et al. |
7274088 | September 25, 2007 | Wu et al. |
7314820 | January 1, 2008 | Lin et al. |
7315077 | January 1, 2008 | Choi et al. |
7315080 | January 1, 2008 | Fan et al. |
7342305 | March 11, 2008 | Diao et al. |
7344920 | March 18, 2008 | Kirloskar et al. |
7348663 | March 25, 2008 | Kirloskar et al. |
7358119 | April 15, 2008 | McLellan et al. |
7371610 | May 13, 2008 | Fan et al. |
7372151 | May 13, 2008 | Fan et al. |
7381588 | June 3, 2008 | Patel et al. |
7399658 | July 15, 2008 | Shim et al. |
7408251 | August 5, 2008 | Hata et al. |
7411289 | August 12, 2008 | McLellan et al. |
7449771 | November 11, 2008 | Fan et al. |
7459345 | December 2, 2008 | Hwan |
7482690 | January 27, 2009 | Fan et al. |
7495319 | February 24, 2009 | Fukuda et al. |
7507603 | March 24, 2009 | Berry et al. |
7595225 | September 29, 2009 | Fan et al. |
7608484 | October 27, 2009 | Lange et al. |
7709857 | May 4, 2010 | Kim et al. |
7714418 | May 11, 2010 | Lim et al. |
8035207 | October 11, 2011 | Camacho et al. |
20020109214 | August 15, 2002 | Minamio et al. |
20030006055 | January 9, 2003 | Chien-Hung et al. |
20030045032 | March 6, 2003 | Abe |
20030071333 | April 17, 2003 | Matsuzawa |
20030143776 | July 31, 2003 | Pedrron, Jr. et al. |
20030178719 | September 25, 2003 | Combs et al. |
20030201520 | October 30, 2003 | Knapp et al. |
20030207498 | November 6, 2003 | Islam et al. |
20040014257 | January 22, 2004 | Kim et al. |
20040026773 | February 12, 2004 | Koon et al. |
20040046237 | March 11, 2004 | Abe et al. |
20040046241 | March 11, 2004 | Combs et al. |
20040070055 | April 15, 2004 | Punzalan et al. |
20040080025 | April 29, 2004 | Kasahara et al. |
20040110319 | June 10, 2004 | Fukutomi et al. |
20050003586 | January 6, 2005 | Shimanuki et al. |
20050077613 | April 14, 2005 | McLellan et al. |
20050236701 | October 27, 2005 | Minamio et al. |
20050263864 | December 1, 2005 | Islam et al. |
20060071351 | April 6, 2006 | Lange |
20060192295 | August 31, 2006 | Lee et al. |
20060223229 | October 5, 2006 | Kirloskar et al. |
20060223237 | October 5, 2006 | Combs et al. |
20060273433 | December 7, 2006 | Itou et al. |
20070001278 | January 4, 2007 | Jeon et al. |
20070013038 | January 18, 2007 | Yang |
20070029540 | February 8, 2007 | Kajiwara et al. |
20070200210 | August 30, 2007 | Zhao et al. |
20070235217 | October 11, 2007 | Workman |
20080048308 | February 28, 2008 | Lam |
20080150094 | June 26, 2008 | Anderson |
20090152691 | June 18, 2009 | Nguyen et al. |
20090152694 | June 18, 2009 | Bemmerl et al. |
20090230525 | September 17, 2009 | Chang Chien et al. |
20090236713 | September 24, 2009 | Xu et al. |
20100133565 | June 3, 2010 | Cho et al. |
20100149773 | June 17, 2010 | Said |
20110115061 | May 19, 2011 | Krishnan et al. |
20110201159 | August 18, 2011 | Mori et al. |
- Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology, Pearson Education International, Pearson Prentice Hall , 2001, p. 587-588.
- Office Action dated Apr. 25, 2012, U.S. Appl. No. 12/960,268, filed Dec. 3, 2010, Somchai Nondhasitthichai et al.
- Office Action mailed Dec. 19, 2012, U.S. Appl. No. 12/834,688, filed Jul. 12, 2010, Saravuth Sirinorakul.
- Notice of Allowance, dated Nov. 28, 2012, U.S. Appl. No. 12/960,268, filed Dec. 3, 2012, Saravuth Sirinorakul et al.
Type: Grant
Filed: Mar 10, 2011
Date of Patent: Nov 5, 2013
Patent Publication Number: 20110221051
Assignee: UTAC Thai Limited (Bangkok)
Inventor: Saravuth Sirinorakul (Bangkok)
Primary Examiner: Phat X Cao
Application Number: 13/045,253
International Classification: H01L 23/495 (20060101);