Power semiconductor module
The broken lines in the drawings are for the purpose of illustrating portions of the power semiconductor module that form no part of the claimed design.
Claims
The ornamental design for a power semiconductor module as shown and described.
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Type: Grant
Filed: Aug 31, 2023
Date of Patent: Sep 29, 2026
Assignee: XPT EDS (Hefei) Co., Ltd. (Hefei City)
Inventors: Zihao Zhao (Shanghai), Ming Li (Shanghai), Daohui Li (Shanghai), Fang Qi (Shanghai)
Primary Examiner: Richard Edgar
Assistant Examiner: Lorna M Georges
Application Number: 29/901,351