Gas-separating plate for reactor for manufacturing semiconductor
Latest Tokyo Electron Limited Patents:
- Bonding apparatus and bonding method
- Substrate processing method and substrate processing apparatus
- Wet processing system and nozzle for dispensing a liquid laterally across a semiconductor wafer
- Etching control system and etching control method
- Substrate processing method and substrate processing apparatus
Description
The broken lines are shown for illustrative purposes only and form no part of the claimed design.
Claims
The ornamental design for gas-separating plate for reactor for manufacturing semiconductor, as shown and described.
Referenced Cited
U.S. Patent Documents
| 3618921 | November 1971 | Corbett, Jr. |
| 5709543 | January 20, 1998 | Shimazu |
| 6379466 | April 30, 2002 | Sahin et al. |
| D600220 | September 15, 2009 | Sato |
| 7625205 | December 1, 2009 | Sasajima et al. |
| D615937 | May 18, 2010 | Sato |
| D616392 | May 25, 2010 | Sato |
| 7798811 | September 21, 2010 | Nitadori et al. |
| 20050056218 | March 17, 2005 | Sun et al. |
| 20050252447 | November 17, 2005 | Zhao et al. |
| 20070131168 | June 14, 2007 | Gomi et al. |
| 20090159002 | June 25, 2009 | Bera et al. |
Patent History
Patent number: D655260
Type: Grant
Filed: Apr 13, 2011
Date of Patent: Mar 6, 2012
Assignee: Tokyo Electron Limited (Minato-Ku)
Inventors: Manabu Honma (Oshu), Katsuyuki Hishiya (Oshu)
Primary Examiner: Selina Sikder
Attorney: Burr & Brown
Application Number: 29/389,564
Type: Grant
Filed: Apr 13, 2011
Date of Patent: Mar 6, 2012
Assignee: Tokyo Electron Limited (Minato-Ku)
Inventors: Manabu Honma (Oshu), Katsuyuki Hishiya (Oshu)
Primary Examiner: Selina Sikder
Attorney: Burr & Brown
Application Number: 29/389,564
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)