Grounded electrode for a plasma processing apparatus

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Description

FIG. 1 is a front and bottom perspective view of a grounded electrode for a plasma processing apparatus showing our/my new design;

FIG. 2 is a front elevational view thereof with explanatory cut lines 8-8;

FIG. 3 is a right side elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a top plan view thereof;

FIG. 7 is a bottom plan view thereof; and,

FIG. 8 is a cross sectional view taken along 8-8.

Claims

I claim the ornamental design for a grounded electrode for a plasma processing apparatus, as shown.

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Patent History
Patent number: D703160
Type: Grant
Filed: Jul 14, 2011
Date of Patent: Apr 22, 2014
Assignee: Hitachi High-Technologies Corporation (Tokyo)
Inventor: Hidenobu Tanimura (Kudamatsu)
Primary Examiner: Selina Sikder
Application Number: 29/397,274