Abstract: A hot-dip galvanized steel sheet includes a base steel sheet and a hot-dip galvanized layer formed on the base steel sheet, the base steel sheet including, by wt %, C: 0.02% to 0.08%, Mn: 1.3% to 2.1%, Si: 0.3% or less (excluding 0%), Cr: 1.0% or less (excluding 0%), P: 0.1% or less (excluding 0%), S: 0.01% or less (excluding 0%), N: 0.01% or less (excluding 0%), sol.Al: 0.02% to 0.06%, Mo: 0.2% or less (excluding 0%), B: 0.003% or less (excluding 0%), and a balance of Fe and inevitable impurities, wherein the base steel sheet has a microstructure comprising 90% or more by area of ferrite, 3% or less by area of bainite as described in Formula 1, and martensite as a remainder.

Abstract: A process is provided for separation of at least one metal sulfide from a mixed sulfide concentrate. The process may comprise: subjecting the mixed sulfide concentrate to flotation in which at least one sulfide comprising antimony, arsenic and a first metal is floated and at least one sulfide comprising a second metal is depressed. The flotation yields a first metal concentrate having the at least one sulfide comprising antimony, arsenic and the first metal and a second metal concentrate having the at least one sulfide comprising the second metal. The first metal concentrate is leached to yield a further concentrate and a leach solution. The further concentrate comprises the first metal and the leach solution comprises soluble antimony and soluble arsenic. The process may further comprise oxidizing the leach solution to yield an antimony precipitate and an arsenic solution, and forming a stable arsenic compound from the arsenic solution.

Abstract: In order to recover high-quality scandium from nickel oxide ores efficiently, this method comprises: a step (S1) for feeding Ni oxide ores and sulfuric acid into a pressure vessel, and subjecting the mixture to solid-liquid separation to form a leachate and a leach residue; a step (S2) for adding a neutralizing agent to the leachate, and thus forming a neutralization sediment and a post-neutralization fluid; a step (S3) for adding a sulfurizing agent to the post-neutralization fluid, and separating the obtained mixture into Ni sulfide and a post-sulfurization fluid; a step (S4) for bringing the post-sulfurization fluid into contact with a chelating resin, making Sc adsorbed on the chelating resin, and forming an Sc eluent; a step (S6) for bringing the Sc eluent into contact with an extracting agent, adding a back-extraction agent to the extract, and forming back-extracted matter; and a step (S8) for roasting the back-extracted matter, and forming Sc oxide.

Abstract: The disclosure provides Pt—P metallic glass-forming alloys and metallic glasses comprising at least two of Ni, Pd, Ag, and Au and optionally Si as well as potentially other elements, where the weight fraction of Pt is between 74 and 91 percent, and where the at least two of Ni, Pd, Ag, and Au contribute to increase the critical rod diameter of the alloy in relation to a Pt—P alloy free of Ni, Pd, Ag, and Au or a Pt—P alloy comprising only one of these elements. In embodiments where the PT850 hallmark is satisfied, alloys according to the disclosure are capable of forming metallic glass rods with diameters in excess of 3 mm, and in some embodiments 30 mm or larger.

Abstract: The present invention concerns an essentially arsenic-free brass alloy with improved (i) dezincification resistance, (ii) machinability, and (iii) protection against intergranular grain boundary corrosion, wherein said brass alloy comprises 62-68% by weight of Cu, 0.02-1.00% by weight of Pb, 0.2-0.6% by weight of P, 0.02-0.06% by weight of Sb, and balance Zn, and the brass alloy being characterized in that it comprises <5% of ?-phase, preferably <1%. In addition, the invention concerns a method for the production of said brass alloy.

Abstract: New 6xxx aluminum alloys are disclosed. The new 6xxx aluminum alloys may include 1.05-1.50 wt. Mg, 0.60-0.95 wt. % Si, where the (wt. % Mg)/(wt. % Si) is from 1.30 to 1.90, 0.275-0.50 wt. % Cu, and from 0.05 to 1.0 wt. % of at least one secondary element, wherein the secondary element is selected from the group consisting of V, Fe, Cr, Mn, Zr, Ti, and combinations thereof.

Abstract: A high strength steel comprises, during intercritical annealing, about 20-80% volume ferrite and 20-80% austenite, and wherein the Ms temperature calculated for the austenite phase during intercritical anneal ?100° C. The high strength steel exhibits a tensile elongation of at least 20% and an ultimate tensile strength of at least 880 MPa. The high strength steel may comprise 0.20-0.30 wt % C, 3.0-5.0 wt % Mn, with Al and Si additions such that the optimum intercritical temperature is above 700° C.

Abstract: A cladding composition is configured for use in a laser cladding process to remanufacture the wear surfaces of machine components that require a significant degree of hardness. The cladding composition can be provided in a powdered form and can include molybdenum (Mo), tungsten (W), cobalt (Co), nickel (Ni), carbon (C), and manganese (Mn) with the balance of the composition being iron. The cladding composition, after melting and solidifying on the wear surface, can from a solid cladding layer having a hardness of 50 or greater as measured on the Rockwell C scale while maintain a significant degree of fracture toughness.

Abstract: A high strength steel comprises up to about 0.25 wt % C, up to about 2.0 wt % Si, up to about 2.0 wt % Cr, up to 14% Mn, and less than 0.5% Ni. It preferably has an Ms temperature less than 50° C. The high strength steel may have a tensile strength of at least 1000 MPa and total elongations of at least about 25% after hot rolling. It may have a tensile strength of at least 1200 MPa and total elongations of at least about 20% after hot rolling.

Abstract: One aspect of this duplex stainless steel contains, in mass %, C: 0.03% or less, Si: 0.05% to 1.0%, Mn: 0.1% to 7.0%, P: 0.05% or less, S: 0.0001% to 0.0010%, Ni: 0.5% to 5.0%, Cr: 18.0% to 25.0%, N: 0.10% to 0.30%, Al: 0.05% or less, Ca: 0.0010% to 0.0040%, and Sn: 0.01% to 0.2%, with the remainder being Fe and inevitable impurities, wherein a ratio Ca/O of the amounts of Ca and O is in a range of 0.3 to 1.0, and a pitting index PI shown by formula (1) is in a range of less than 30, PI=Cr+3.3Mo+16N??(1).

Abstract: A Zr-based amorphous alloy has the following formula: ZraCubAlcNidTieMf. a, b, c, d, e, and f of the formula are corresponding atomic percents with 50?a?55, 25?b?30, 15?c?24, 0.1?d?9, 0.1?e?5, 0.1?f?5, and a+b+c+d+e+f?100. M is selected from one or more of the following group consisting of Sc, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and mixtures thereof.

Abstract: The invention provides a method of manufacturing a component formed of an aluminum alloy for use in an automotive vehicle application, for example those requiring high strength, light-weight, and a complex three-dimensional shape. The method begins by providing a blank formed of an aluminum alloy which is already solution heat treated and tempered, and thus has a temper designation of about T4. The method further includes heating the blank to a temperature of 150° C. to 350° C., preferably 190° C. to 225° C. The method next includes quickly transferring the blank to a hot or warm forming apparatus, and stamping the blank to form the complex three-dimensional shape. Immediately after the forming step, the component has a temper designation of about T6, but preferably not greater than T6, and thus is ready for use in the automotive vehicle application without any post heat treatment or machining.

Abstract: The present invention provides a method for producing a sheet. The method includes providing a substrate, depositing a metal coating over at least one surface by dipping the substrate in a bath in order to obtain the sheet, wiping the metal coating by means of at least one nozzle projecting through at least one outlet a wiping gas onto the metal coating, the sheet being run in front of the nozzle, the wiping gas being ejected from the nozzle along a primary direction of ejection (E), a confinement box delimiting a confined zone at least downstream of the zone of impact (I) of the wiping gas on the sheet and solidifying the metal coating. The method satisfying: Z d ? 12 ? ? and ? ? f O 2 ? 10 - 4 W 2 ? ( 0.63 + 0.4 + 94900 * ? W 2 ) ? ? with ? ? W = PdZ V .

Abstract: A bond layer may be applied to the substrate of an article and a first layer may be applied to the bond layer by thermal spray. A second layer may be applied above the first layer by slurry coating.

Abstract: A heated alkali metal vapour dispenser comprising a filiform element containing a metal releasing material and two terminals fixed at its ends is described. In particular, metal vapour dispensers with an improved control on the rate and reproducibility of the released metal vapours.

Abstract: A type of High Magnetic Field Assisted PLD System consisting of pulsed laser and PLD cylindrical vacuum chamber inclusive of double-layer clip-sheath cylindrical chamber with water cooling located in the bore hole of superconducting magnet is disclosed. A flange plate in one side of the double-layer clip sheath is equipped with substrate heating table or laser heating table and rotating mechanism; the flange plate in another side is equipped with target components and moving/rotating mechanism. Either the substrate heating table or laser heating table is located in the center area of magnetic field of the superconducting magnet. A PLD (pulsed laser deposition) cylindrical vacuum chamber is located in the slide rail. A sealed laser leading-in chamber and a vacuum-sealed video-unit leading-in chamber is installed on the flange plate in one side of double-layer clip sheath cylindrical chamber.

Abstract: A steel sheet is provided with a coating having at least one layer of zinc and a top layer of paint applied by cataphoresis. The zinc layer is deposited by a jet vapor deposition process in a deposition chamber maintained at a pressure between 6·10?2 mbar and 2·10?1 mbar. A fabrication method is also provided.

Abstract: A vapour deposition method for preparing a crystalline lithium-containing transition metal oxide compound comprises providing a vapour source of each component element of the compound, including at least a source of lithium, a source of oxygen, and a source or sources of one or more transition metals; heating a substrate to between substantially 150° C. and substantially 450° C.; and co-depositing the component elements from the vapour sources onto the heated substrate wherein the component elements react on the substrate to form the crystalline compound.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: The present disclosure provides a method of coating a substrate so as to provide a controlled in-plane compositional modulation. The method comprises providing a first target of a first material or material composition, providing a second target (104, 204, 304) of a second material or material composition, different from the first material or material composition; activating the first and second targets (103, 104; 203 204; 303, 304) to release particles by evaporation, sublimation or sputtering; and causing the released particles to impinge onto the substrate (102, 202, 302) such that the substrate is coated. Activation of one of the targets (103, 104; 203 204; 303, 304) includes providing a series of activation pulses, such that pulsed evaporation, sublimation or sputtering of particles is provided, while the other one of the targets (103, 104; 203 204; 303, 304) is substantially passive.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

Abstract: A processing apparatus for processing a flexible substrate in a vacuum chamber is described. The processing apparatus includes a processing drum for processing the flexible substrate while being guided on the processing drum, a roller arrangement having one or more rollers configured to contact the flexible substrate along a portion of one or more circumferences of the one or more rollers before the flexible substrate is guided on the processing drum, wherein the combined length of contact along one or more portions of the one or more circumferences of the one or more rollers is 270 mm or above, and wherein an individual length of contact along each of the one or more portions of the one or more circumferences of the one or more rollers is 500 mm or below, and a temperature adjustment element adjusting the temperature of the one or more rollers.

Abstract: The present invention relates to a method of diamond nucleation, comprising the following steps: providing a substrate and forming a graphene layer on a surface of the substrate; providing a reaction chamber and disposing the substrate in the reaction chamber; providing a gas mixture in the reaction chamber, wherein the gas mixture includes a carbon-containing gas; and forming a plasma in the reaction chamber to cause the carbon-containing gas to react and form a plurality of diamond nuclei on a surface of the graphene layer. The present invention also relates to a structure formed by the aforesaid method, comprising: a substrate; a graphene layer disposed on the substrate; and a plurality of diamond particles formed on the graphene layer.

Abstract: Provided is a free-standing silicon oxide film that is under tensile stress. Also, provided are methods of making a free-standing silicon oxide film that is under tensile stress. The methods use low-power PECVD deposition of silicon oxide. Methods of imaging one or more objects (e.g., cells) using a free-standing silicon oxide film that is under tensile stress is also provided.

Abstract: A radical reactor including an elongated structure received within a chamber of a body of the radical reactor. Radicals are generated within a radical chamber formed in the elongated structure by applying a voltage signal across the elongated structure and an electrode extending within the radical chamber. The radicals generated in the radical chamber are routed via a discharge port of the elongated structure and a conduit formed in the body of the radical reactor onto the substrate.

Abstract: A reaction chamber assembly with a shutter system may be used in the processing of semiconductor substrates. The shutter system may facilitate gas flow control and temperature control within the reaction chamber assembly.

Abstract: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate.

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

Abstract: A gallium nitride thin film can be formed on a substrate at a low temperature (e.g., not higher than 600° C.) by applying a laser to resonantly excite molecules of a first precursor that contains nitrogen, in which the laser has a wavelength that is selected to match a vibration mode and/or a vibrational-rotational mode of the molecules of the first precursor. A second precursor is provided in which the excited first precursor and the second precursor react to form a nitride that is deposited on the substrate. For example, the second precursor may include gallium, and the nitride may be gallium nitride. Other nitride films can be produced in a similar manner.

Abstract: A vapour deposition method for preparing an amorphous lithium-containing oxide or oxynitride compound not containing phosphorous comprises providing a vapour source of each component element of the compound, including at least a source of lithium, a source of oxygen, a source of nitrogen in the case of an oxynitride compound, and a source or sources of one or more glass-forming elements; heating a substrate to substantially 180° C. or above; and co-depositing the component elements from the vapour sources onto the heated substrate wherein the component elements react on the substrate to form the amorphous compound.

Abstract: An electrochemical strip is disclosed. The electrochemical strip includes a substrate and an electrode deposited on the substrate. The electrode includes a conductive paste layer, a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer. The conductive paste is made of a material selected from the group consisting of copper paste, nickel paste, silver paste, and silver-carbon paste. The first metal layer is made of a group VIII metal. The second metal layer is made of nickel. The third metal layer is made of a group VIII metal. The fourth metal layer is made of a material selected from the group consisting of palladium, gold, and platinum.

Abstract: There is provided a metal plate coated stainless material (100) which includes a stainless steel sheet (10) having formed thereon a passivation film (11) having a Cr/O value in the range of 0.05 to 0.2 and a Cr/Fe value in the range of 0.5 to 0.8 at the surface as measured by an Auger electron spectroscopy analysis and a metal plated layer (20) formed on the passivation film (11) of the stainless steel sheet (10), in which the metal plated layer (20) is a plated layer formed from any one metal selected from among Ag, Pd, Pt, Rh, Ru, Cu, Sn and Cr, or an alloy of these metals.

Abstract: An iron-containing metal surface, such as a brushed stainless steel, comprises a heat-set layer of a metal phosphate reaction product formed between a surface metal and phosphate precursor wherein the reaction product layer has an average thickness less than 2 micrometers. A metal surface, that resists retention of environmental stains or marks as well as resisting tarnish at elevated temperatures, is formed by forming a reaction product with the metal surface by heat setting a surface liquid layer containing a phosphate precursor such as a phosphate ester-containing solution or phosphoric acid solution, and optionally containing a phospho alumina precursor, onto the metal surface. An article coated in accordance with this invention is similar in appearance to a similar article without such a coating for maintaining original aesthetic properties.

Abstract: Disclosed is a microetching solution for copper, a replenishment solution therefor and a method for production of a wiring board. The microetching solution of the present invention consists of an aqueous solution containing a cupric ion, an organic acid, a halide ion, an amino group-containing compound having a molecular weight of 17 to 400 and a polymer. The polymer is a water-soluble polymer including a polyamine chain and/or a cationic group and having a weight average molecular weight of 1000 or more. When a concentration of the amino group-containing compound is A % by weight and a concentration of the polymer is B % by weight, a value of A/B of the microetching solution of the present invention is 50 to 6000. According to the present invention, an adhesion between copper and a resin or the like may be maintained even with a low etching amount.

Abstract: A photoelectrolysis system includes at least one photoelectrochemical (PEC) cell having at least one photoanode and at least one photocathode. A light concentrator provides concentrated light to PEC cell. The PEC cell electrolyzes the electrolyte into H2 and O2 in response to excitons generated by the concentrated light on the PEC cell. An electrolyte flow apparatus moves the electrolyte over surfaces of one or both of the photoanode and the photocathode at a flow rate that is based on one or more characteristics of the photoelectrolysis.

Abstract: An application for a recycler includes a pressure and temperature resistant metal vessel that is filled with a liquid. Within the vessel is at least one submerged electric arc between a pair of electrodes (e.g. carbon based electrodes) powered by either a DC or AC current. The electric arc produces a combustible gas as the liquid is pumped through a bore in one or both of the electrodes, delivering the liquid directly to the location of the arc, thereby reducing or eliminating any ignition of the gas by the arc. Should ignition occur, at least one vent in the electrode(s) or electrode holder(s) vents pressure from within the bore to the vessel area outside of the electrode(s).

Abstract: An oxygen evolution reaction (OER) electrocatalyst for acidic media comprises a metal oxide structure comprising a pyrochlore phase of chemical formula A2B2On, wherein A comprises one or more A-site metals, B comprises one or more B-site metals, and 6.0?n?7.3. The metal oxide structure exhibits a mass current density of at least about 20 A/g at an over-potential of 0.22 V in 0.1 M HClO4. According to another embodiment, an electrocatalyst for acidic media comprises a porous metal oxide structure having particulate walls separating a plurality of pores, where each particulate wall comprises interconnected primary particles. The porous metal oxide structure comprises a pyrochlore phase of chemical formula A2B2On, wherein A comprises one or more A-site metals, B comprises one or more B-site metals, and 6.0?n?7.3.

Abstract: A process for depositing a plurality of layers of iridium on a substrate includes: contacting the substrate with an electrolyte composition including: iridium cations protons; biasing the substrate at a first potential; forming iridium on the substrate at the first potential of the substrate; disposing hydrogen on the substrate; self-terminating the forming of iridium on the substrate in response to increasing a coverage of hydrogen on the substrate; oxidizing hydrogen on the substrate by changing a potential of the substrate from the first potential to a second potential; and changing the potential of the substrate from the second potential to a third potential for forming additional iridium on the substrate to deposit a plurality of layers of iridium on the substrate, such that forming the additional iridium on the substrate occurs at the third potential in response to oxidizing the hydrogen on the substrate at the second potential.

Abstract: A method and a precursor for the large-scale production of upconverting nanocrystals derived from a NaYF4 host are provided. A rare earth based precursor is combined with a hydrophobic fluoride precursor, which is based upon a long-chain n-alkyl amine to form a reaction solution. The reaction solution is heated under an inert gas to temperatures above 300° C., whereby upconverting NaYF4-based nanocrystals are nucleated and grown.

Abstract: A method for producing a SiC single crystal by a solution process is provided, which allows generation of miscellaneous crystals to be reduced. Method for producing a SiC single crystal wherein a crucible has thickness Lu in horizontal direction at same height as liquid level of Si—C solution, and thickness Ld in horizontal direction at same height as bottom inner wall, Ld/Lu is 2.00 to 4.21, and thickness in horizontal direction of crucible monotonously increases between Lu and Ld from Lu toward Ld, wall thickness of crucible is 1 mm or greater, bottom thickness Lb in vertical direction of crucible is between 1 mm and 15 mm, bottom outer wall of crucible has flat section with area of 100 mm2 or greater, depth of Si—C solution from bottom inner wall is 30 mm or greater, and method includes heating and electromagnetic stirring Si—C solution with high-frequency coil.

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Abstract: Provided is a method for manufacturing a silicon carbide single crystal capable of easily separating a silicon carbide single crystal from a pedestal. The method includes the step of fixing a seed substrate to a pedestal with a stress buffer layer being interposed therebetween, the step of growing a silicon carbide single crystal on the seed substrate, the step of separating the silicon carbide single crystal from the pedestal at the stress buffer layer, and the step of removing a residue of the stress buffer layer adhering to the silicon carbide single crystal subjected to the step of separating.

Abstract: A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.

Abstract: A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.

Abstract: A susceptor supports a semiconductor wafer and includes a substantially cylindrical body comprising an outer rim having an upper surface. The body also includes a recess extending into the body from the upper surface to a recess floor such that the recess is sized and shaped for receiving the wafer therein. The body further includes a ledge extending between the rim and the recess floor. The ledge includes a ramp comprising a first surface, a second surface, and a third surface. The first surface is oriented at a first angle with respect to the upper surface; the second surface is oriented at a second angle oriented with respect to the upper surface; and the third surface is oriented at a third angle with respect to the upper surface. Further, the second angle is greater than the first angle.

Abstract: A vapor phase growth apparatus includes: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature,

Abstract: A method for producing a diamond single crystal includes implanting an ion other than carbon into a surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted surface of the seed substrate using a chemical vapor synthesis under synthesis conditions where the ratio NC/NH of the number of carbon-containing molecules NC to the number of hydrogen molecules NH in a gas phase is 10% or more and 40% or less, the ratio NN/NC of the number of nitrogen molecules NN to the number of carbon-containing molecules NC in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850° C. or more and less than 1000° C.

Abstract: Various embodiments of the present invention relate to surface enhanced pulp fibers, various products incorporating surface enhanced pulp fibers, and methods and systems for producing surface enhanced pulp fibers. Various embodiments of surface enhanced pulp fibers have significantly increased surface areas compared to conventional refined fibers while advantageously minimizing reductions in length following refinement. The surface enhanced pulp fibers can be incorporated into a number of products that might benefit from such properties including, for example, paper products, paperboard products, fiber cement boards, fiber reinforced plastics, fluff pulps, hydrogels, cellulose acetate products, and carboxymethyl cellulose products. In some embodiments, a plurality of surface enhanced pulp fibers have a length weighted average fiber length of at least about 0.

Abstract: A non woven web containing water insoluble nanofibers and/or microfibers obtained by an electrospinning process using water based solution containing at least two components, a first component having carboxylic acid and/or anhydride functionalities and a second component having primary and/or secondary amino functionalities, the web being cured upon a heat treatment. Application: filtration and separation.

Abstract: Provided is a liquid crystal polyester fiber having high strength, high elastic modulus, high abrasion resistance, excellent processability, and little thermal deformation at high temperature, and also provided is a production method thereof. A liquid crystal polyester fiber, characterized in that the peak half-value width of the endothermic peak (Tm1) observed when measuring by differential calorimetry under rising temperature conditions starting at 50° C. and increasing 20° C./min is 15° C. or higher, the polystyrene-converted weight-average molecular weight is between 250,000 and 2,000,000 inclusive, the peak temperature of the loss tangent (tan ?) is between 100° C. and 200° C. inclusive, and the peak value of the loss tangent (tan ?) is between 0.060 and 0.090 inclusive. A mesh fabric comprising the liquid crystal polyester fiber.