Abstract: Provided is a seed crystal for pulling a silicon single crystal that can reduce generation of slip dislocation due to thermal shock that occurs at the time of contact with a silicon melt, suppress propagation of this slip dislocation, and eliminate dislocation even though a diameter of a neck portion is larger than that in conventional examples. The seed crystal for pulling a silicon single crystal according to the present invention is an improvement in a seed crystal used for pulling a silicon single crystal based on a CZ method, and its characteristics configuration lies in that the seed crystal is cut out from a silicon single crystal pulled from a carbon-doped silicon melt and a concentration of carbon with which the seed crystal is doped is in the range of 5×1015 to 5×1017 atoms/cm3.

Abstract: By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others.

Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.

Abstract: A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

Abstract: A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.

Abstract: A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals.

Abstract: A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion.

Abstract: Methods of recycling excess semiconductor material removed from an unshaped semiconductor boule are disclosed. Excess semiconductor material is cut from an semiconductor unshaped boule thereby generating a shaped semiconductor boule. The excess semiconductor material is removed in the form of large pieces that can easily be cleaned and retrieved for reuse.

Abstract: A process for producing a silicon single crystal is by pulling the single crystal from a silicon melt which is contained in a crucible with a diameter of at least 450 mm, above which a heat shield is arranged. The single crystal being pulled has a diameter of at least 200 mm. The silicon melt is exposed to the influence of a traveling magnetic field which exerts a substantially vertically oriented force on the melt in the region of the crucible wall. There is also an apparatus which is suitable for carrying out the process.

Abstract: Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Abstract: A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (6), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor (6) is reduced. Especially, a width of speed fluctuation (?V) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor (6) becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt (5).

Abstract: A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.

Abstract: Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 ?m, an overall planarity value GBIR of 5 ?m or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 ?m, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

Abstract: In a silica glass crucible used for pulling a silicon crystal, a circumferential maximum tolerance of each of bubble content, wall thickness and transmission as measured over a full circumference of the crucible at a same height position is not more than 6%.

Abstract: A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

Abstract: A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen concentration and the carbon concentration are controlled respectively within a range of 11×1017-17×1017 atoms/cm3 (OLD ASTM) and within a range of 1×1016-15×1016 atoms/cm3 (NEW ASTM). A denuded zone having no crystal defects due to the existence of oxygen is formed on the surface and in the vicinity thereof, and oxygen precipitates are formed at a density of 1×104-5×106 counts/cm2, when a heat treatment is carried out at a temperature of 500-1000° C. for 1 to 24 hours. In the method for manufacturing the silicon wafer, moreover, the silicon wafer having the oxygen and carbon concentrations as controlled above is heat-treated at a temperature of 1100° C.-1380° C. for 1 to 10 hours.

Abstract: The present invention is a quartz glass crucible 5 for pulling a silicon single crystal, comprising at least an outer layer portion 23 being a translucent glass layer containing multiple bubbles in it and an inner layer portion 24 being a transparent quartz glass layer having no bubbles and a smooth surface, formed on the inner surface of the outer layer portion 23, wherein the outer layer portion 23 contains bubbles of 0.1 to 0.3 mm in diameter at the density of 1.5 to 5.0×104 bubbles/cm3. Thus, there are provided a quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible being increased in mechanical strength, making it possible to suppress deformation of a quartz glass crucible for pulling a silicon single crystal during a single crystal pulling process, thereby prevent degradation in yield rate due to dislocation in a single crystal and make the manufacture of a silicon single crystal highly efficient and a method of manufacturing the same quartz glass crucible.

Abstract: In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented.

Abstract: A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

Abstract: Provided is a silicon crystalline material, which is manufactured by a CZ method to be used as a material bar for manufacturing a silicon single crystal by an FZ method and has a grasping section for being loaded in a crystal growing furnace employing the FZ method without requiring mechanical processing. A method for manufacturing such silicon crystalline material is also provided. The silicon crystalline material is manufactured by the silicon crystal manufacturing method employing the CZ method and is provided with the grasping section, which is manufactured in a similar way as a shoulder portion, a straight body portion and a tail portion in a silicon crystal growing step employing the CZ method, and is loaded in a single crystal manufacturing apparatus employing the FZ method to grow single crystals. A seed-crystal used in the silicon crystal manufacture employing the CZ method is used as the grasping section.

Abstract: A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm?3 to 7.2*1017 cm?3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

Abstract: A highly pure, replaceable wear insert and a process for manufacturing the same use a group of materials which is suitable for meeting the requirements of high temperature semiconductor technology processes and is chosen at the same time for producing thin layers or components therefrom. The materials are compacted and purified at high temperatures in compression molds and the products so produced are put to their intended use. The substantially thin-walled and crucible-shaped, always highly pure components, which are predominantly made of expanded graphite, are employed as a wear insert for protecting graphitic support crucibles from reactive attack by quartz glass crucibles in semiconductor technology processes at temperatures above 500° C.

Abstract: When growing a silicon single crystal free of grown-in defects based on the CZ method, the crystal is pulled out at a critical pulling rate at which a ring-shaped OSF occurrence region vanishes in a center portion of the crystal by using a hot zone structure in which a temperature gradient Gc in a center portion of the crystal is equal to or greater than a temperature gradient Ge in a peripheral portion of the crystal, while supplying an inert gas including hydrogen to an interior of a pulling furnace. The critical pulling rate at which the ring-shaped OSF occurrence region vanishes in the center portion of the crystal is increased, and single crystals free of grown-in defects in which dislocation clusters and COPs can be grown by pulling at a pulling rate higher than that of the prior art.

Abstract: An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does not cause local lack of the electrode and does not create black foreign materials or concave portions on the inner surface of the crucible. The arc melting high-purity carbon electrode is a carbon electrode used to heat and melt silica powder by arc discharge, in which the density of the carbon electrode is equal to or more than 1.60 g/cm3 and equal to or less than 1.80 g/cm3, and is formed of high-purity carbon particles having a diameter of 0.05 mm or less.

Abstract: The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm3 to 1.80 g/cm3, and variability in density among the carbon electrodes is 0.2 g/cm3 or less. The carbon particles that constitute the carbon electrodes preferably have a particle diameter of 0.3 mm or less.

Abstract: The invention relates to an inorganic scintillator material of formula Lu(2-y)Y (y-z-x) CexMzSi (1-v) M? vO5, in which: M represents a divalent alkaline earth metal and M? represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

Abstract: Coil arrangement for crystal pulling comprising two coils, wherein at least one of said two coils is arranged in a way to substantially surround the crystal and/or the fluid the crystal is pulled from. Method of forming a crystal comprising the steps of providing a fluid the crystal is pulled from, and providing two coils, wherein at least one of said two coils is arranged in a way to substantially surround the crystal and/or the fluid, and pulling the crystal from the fluid.

Abstract: A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the insertable layer and an inner crucible. The insertable layer, wire frame and inner crucible are preferably composed of platinum. Furthermore the insertable layers have thin walls and the frame has a small diameter such that they can be easily reshaped after any deformation occurring as a result of the single crystal growth process.

Abstract: The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in th

Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Abstract: A method for producing an SiC single crystal comprises providing a low temperature region and a high temperature region in a crystal growth crucible (6); disposing a seed crystal substrate formed of an SiC single crystal in the low temperature region of the crystal growth crucible; disposing an SiC raw material in the high temperature region; and depositing a sublimation gas that sublimes from the SiC raw material on the seed crystal substrate to grow the SiC single crystal. A material used in the crucible member where the seed crystal is disposed is a material having a room-temperature linear expansion coefficient that differs from that of SiC by 1.0×10?6/K or less, and the crucible member where the seed crystal is disposed is made of Sic.

Abstract: A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.

Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4 ?cm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium.

Abstract: A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 ?m/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.

Abstract: A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during shoulder section formation is maintained within a specified range. It is thereby possible to grow large-diameter and heavy-weight dislocation-free silicon single crystals with a diameter of 300 mm or more in a stable manner, without the fear of dropping the single crystal during pulling up. Therefore, the method can be properly utilized in producing silicon single crystals as semiconductor materials.

Abstract: A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 ?cm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.

Abstract: An oxide single crystal having a composition represented by RExSi6O1.5x+12 (RE: La, Ce, Pr, Nd, or Sm, x: 8 to 10) is grown by using the Czochralski method such that the crystal growth orientation coincides with the c-axis direction. The solidification rate (the weight of the grown crystal÷the weight of the charged raw material) in the crystal growth is less than 45%.

Abstract: This invention relates to a device and method for production of ingots of semiconductor grade silicon, including solar grade silicon, where the presence of oxygen in the hot zone is substantially reduced or eliminated by employing materials void of oxides in the hot zone of the melting and crystallisation process. The method may be employed for any known process including for ciystallising semiconductor grade silicon ingots, including solar grade silicon ingots, such as the Bridgman process, the block-casting process, and the CZ-process for growth of monocrystalline silicon crystals. The invention also relates to devices for carrying out the melting and crystallisation processes, where the materials of the hot zone are void of oxides.

Abstract: A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.

Abstract: An apparatus and method of manufacturing a crystal grower is disclosed. The crystal grower includes a reservoir constructed to receive a crystal growing material therein. An induction heater having a coil of woven strands of wire is disposed proximate the reservoir and heats the crystal growing material.

Abstract: A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (10A) to the top of the straight cylinder portion (10B), the silicon single crystal (10) is pulled under conditions that the oxygen concentration Oi from the shoulder (10A) to the top of the straight cylinder portion (10B) of the silicon single crystal (10) is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×1017 atoms/cm3.

Abstract: A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow around the ribbon crystal such that the gas flows down along the ribbon crystal toward the crucible.

Abstract: A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.

Abstract: A method of shoulder formation in growing silicon single crystals by the CZ method which comprises causing the taper angle to vary in at least two stages, desirably three stages or four stages, can inhibit the occurrence of dislocations in the shoulder formation step and thereby improve the yield and increase the productivity. As the number of stages resulting from varying the taper angle is increased, possible disturbances to occur at crystal growth interfaces and incur dislocations can be reduced and, further, when the above shoulder formation method is applied under application of a transverse magnetic field having a predetermined intensity, the occurrence of dislocations can be inhibited and defect-free silicon single crystals suited for the manufacture of wafers can be grown with high production efficiency. Therefore, the method is best suited for the production of large-diameter silicon single crystals with a diameter of 450 mm which are to be applied to manufacturing semiconductor devices.

Abstract: By giving a shoulder portion height of at least 100 mm in growing silicon single crystals having a diameter of 450 mm (weighing up to 1100 kg) by the CZ method, it becomes possible to inhibit the occurrence of dislocations in the shoulder formation step to thereby achieve a yield improvement and increase productivity. Furthermore, when this method is applied under application of a transverse magnetic field with a predetermined intensity, the occurrence of dislocations can be further inhibited and, accordingly, defect-free silicon single crystals suited for wafer manufacture can be grown with high production efficiency. Thus, the method is best suited for the production of large-diameter silicon single crystals having a diameter of 450 mm, which are applied in the manufacture of semiconductor devices.

Abstract: A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

Abstract: The present invention(s) provide an apparatus for forming a rod, which is also sometimes referred to as an ingot or boule, which can be subsequently diced to form multiple substrates that may be utilized to form a solar cell device. The substrate may be a monocrystalline, or polycrystalline, substrate made by use of a CZ type crystal pulling technology. In one embodiment, the crystal pulling apparatus is used to form a substrate used form a solar cell device. In one embodiment, a feed material is delivered to a crucible using a vibratory feeder assembly and is heated using a novel heater assembly to allow a CZ type crystal pulling process to be performed.