Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: The invention provides a method of treating a material to cause the material to evolve from one phase to a more ordered phase, the method comprising an operation of irradiating the material in which the irradiating particles are suitable, by their nature and by their energy, for inducing displacements of the atoms in the material towards positions that favor ordering of the material. Advantageously, the invention also provides apparatus for magnetically recording information, the apparatus comprising a material deposited on a substrate at a temperature of less than 350° C. and that has been subjected to irradiation with irradiating particles that are suitable, by their nature and their energy, for inducing displacements of the atoms in the material towards positions that favor relaxation of the material.

Abstract: A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium content of the SiGe layer is greater than 20%, by atomic ratio; implanting H+ ions into the SiGe layer at a dose of between about 1·1016 cm−2 to 5·1016 cm−2, at an energy of between about 20 keV to 45 keV; patterning the SiGe layer with photoresist; plasma etching the structure to form trenches about regions; removing the photoresist; and thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes.

Abstract: A method of forming a three-dimensional (3D) complete photonic bandgap crystal by crystal modification is disclosed. The 3D crystal includes a first periodic array of unit cells formed from first voids connected by imaginary bonds. The first periodic array forms an incomplete bandgap. The first voids may be formed in any one of a number of shapes, including spherical. The 3D crystal further includes a second periodic array of second voids. The second voids are arranged along the imaginary bonds so as to modify each unit cell. The modification of the unit cells is designed to form a complete photonic bandgap.

Abstract: A method for advantageously producing sintered eutectic ceramics having a homogenous and dense structure, in particular, a eutectic containing a rare earth aluminate compound. The method allows eutectic powder of alumina and a rare earth aluminate compound to stand at a temperature of 1300-1700° C. for 1-120 minutes under vacuum or in an non-oxidative atmosphere under a pressure of 5-100 MPa using a spark plasma sintering apparatus, thereby causing crystal growth to occur to obtain a rare earth aluminate eutectic structure crystal.

Abstract: A method of forming a periodic index of refraction pattern in a superlattice of a solid material to achieve photonic bandgap effects at desired optical wavelengths is disclosed. A plurality of space group symmetries, including a plurality of empty-spaced buried patterns, are formed by drilling holes in the solid material and annealing the solid material to form empty-spaced patterns of various geometries. The empty-spaced patterns may have various sizes and may be formed at different periodicities, so that various photonic band structures can be produced for wavelength regions of interest.

Abstract: A method of forming thin film waveguide regions in lithium niobate uses an ion implant process to create an etch stop at a predetermined distance below the lithium niobate surface. Subsequent to the ion implantation, a heat treatment process is used to modify the etch rate of the implanted layer to be in the range of about 20 times slower than the bulk lithium niobate material. A conventional etch process (such as a wet chemical etch) can then be used to remove the virgin substrate material and will naturally stop when the implanted material is reached. By driving the ions only a shallow distance into the substrate, a backside etch can be used to remove most of the lithium niobate material and thus form an extremely thin film waveguide that is defined by the depth of the ion implant. Other structural features (e.g., ridge waveguides) may also be formed using this method.

Abstract: A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.

Abstract: A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

Abstract: In a single crystal SiC composite material for producing a semiconductor device, and a method of producing the same according to the invention, a single crystal SiC film which is produced on an Si substrate by the heteroepitaxial growth method and obtained by removing the Si substrate, is stacked and bonded via a film-like SiO2 layer onto the surface of a polycrystalline plate consisting of Si and C atoms in a closely contacted manner forming thereby a stacked composite member. The stacked composite member is then heat-treated, whereby single crystal SiC in which the crystal is transformed in the same orientation as the single crystal of the single crystal SiC film is integrally grown on the polycrystalline plate. The thickness and the strength which are requested for producing a semiconductor device can be ensured, and lattice defects and micropipe defects seldom occur, so that an accurate and high-quality semiconductor device can be produced.

Abstract: A sequential lateral solidification mask having a first region with a plurality of first stripes that are separated by a plurality of first slits. The mask further includes a second region having a plurality of second stripes separated by a plurality of second slits. The second stripes are perpendicular to the first stripes. A third region having a plurality of third stripes separated by a plurality of third slits, with the third stripes being transversely arranged relative to the first stripes. A fourth region having a plurality of fourth stripes and a plurality of fourth slits between the fourth stripes, with the fourth stripes being transversely arranged relative to the second stripes. Sequential lateral solidification is performed using the mask by multiple movements of the mask and multiple, overlapping irradiations.

Abstract: The invention relates to a method for growing single crystals of Perovskite Oxides. The method is characterized by comprising the steps of (a) contacting a Perovskite seed single with a Perovskite polycrystal and (b) heating the contacted crystals to grow the same structure as the single crystal into the polycrystal, the heating is controlled under conditions which abnormal grains growth is induced in the contacted portion while repressed in the inside of the polycrystal. The method for growing single crystals of Perovskite Oxides according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of Perovskite Oxides according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.

Abstract: In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments.

Abstract: There is provided a novel manufacturing process for an epitaxial wafer having an IG ability, wherein heat treatment is applied at a temperature in a range of from 450° C. to 750° C. to an epitaxial wafer in which oxygen precipitation nuclei are reduced in an epitaxial growth step so as to form new oxygen precipitation nuclei therein, and oxygen precipitation proceeds in a device fabrication process subsequent to the heat treatment, especially oxide precipitates being effectively increased even when a wafer with a comparatively low oxygen concentration is used as a silicon substrate. A heat treatment at a temperature in a range of from 450° C. to 750° C. is applied to a silicon epitaxial wafer obtained by forming an epitaxial layer on a silicon substrate with an interstitial oxygen concentration in a range of from 4×1017/cm3 to 10×1017/cm3 at a temperature of 1000° C. or higher.

Abstract: A process for fabricating thin film transistors is disclosed, which comprises a two-step laser annealing process as follows: crystallizing the channel portion by irradiating the channel portion with an irradiation beam; and modifying the electric properties of the source and the drain by irradiating the source and the drain with an irradiation beam in a step independent to the first step of crystallizing the channel portion.

Abstract: A method for producing self-polarized ferroelectric layers, in particular PZT layers, with a rhombohedral crystal structure includes providing a substrate and heating it to a temperature T1. Afterward the layer with a rhombohedral crystal structure is applied to the substrate by means of a sputtering method. This layer includes a Zr-deficient layer with a Curie temperature TC1 and a Zr-abundant layer with a Curie temperature TC2 wherein TC2<TC1<T1. After the ending of the application process, the heating of the substrate is also discontinued so that the substrate cools. As a result of the cooling the Zr-deficient layer and then the Zr-abundant layer reach their Curie temperature, and change into the ferroelectric phase and become self-polarized in the process. The polarization already present in the Zr-deficient layer induces the polarization in the Zr-abundant layer, with the result that both layers are self-polarized after the cooling process.

Abstract: According to the invention, a complex (M or M′) formed by stacking in a closely contacted state a single crystal &agr;-SiC base material (1) and a polycrystalline plate (2) which is produced into a plate-like shape by the CVD method with interposing an intermediate layer (4 or 4′) containing Si and O as fundamental components, such as silicon rubber between opposing faces of the two members (1) and (2) in a laminated manner is heat-treated at a temperature of 2,200° C. or higher, and under a saturated SiC vapor pressure, thereby causing polycrystal members of the polycrystalline plate (3) to be transformed in a same direction as single crystal of the single crystal &agr;-SiC base material (1) to integrally grow single crystal. Therefore, single crystal SiC of a high quality in which crystal defects and distortion are prevented from occurring and micropipe defects hardly occur can be produced easily and efficiently.

Abstract: A method for growing an epitaxial silicon-germanium layer is described. The method includes removing a native oxide layer on the silicon substrate surface. A HF vapor treatment process is then conducted on the silicon substrate. Thereafter, a germanium layer is formed on the silicon substrate, followed by performing a rapid thermal anneal process under an inert gas to form a silicon-germanium alloy layer on the surface of the silicon substrate.

Abstract: A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.

Abstract: A method of providing a predetermined level and state of stress in a film deposited on a surface of a substrate. In one embodiment, a layer of crystalline material is deposited on a surface of a substrate and then a layer of amorphous material is deposited on the layer of crystalline material. Then, the layers are heated, causing the amorphous material to crystallize. Such crystallization reduces, or even changes the state of, stress in the amorphous layer, which in turn alters the forces applied by the layer to adjacent regions of the substrate. The method may be used for filling a deep-trench capacitor of the type used in trench-storage DRAMs.

Abstract: A method for forming low defect density epitaxial layers on lattice-mismatched substrates includes confining dislocations through interactions between the dislocations and the stress field in the epitaxial layer. This method is applicable to any heteroepitaxial material systems with any degree of lattice mismatch. The method includes choosing the desired epilayer and the top substrate layer for epitaxial growth, determining the lattice constant and thermal expansion coefficient of the final epilayer and the top substrate layer, bonding an additional substrate layer under the top substrate layer to form a composite substrate so that the desired epilayer has negative (positive) or zero thermal mismatch to the composite substrate if the lattice mismatch between the epilayer and the top substrate layer is positive (negative), and choosing a buffer layer to be deposited before the desired epilayer which is lattice matched to the epilayer.

Abstract: Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.

Abstract: A method for producing narrow wires including titanium oxide of high crystallinity and diameter of the order of nanometer, in particular whiskers of titanium oxide, and including a first step of preparing a base having a titanium-including surface, second step of discretely depositing a material other than titanium over the above surface, and third step of thermally treating the above surface, obtained by the second step, in a titanium-oxidizing atmosphere.

Abstract: A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

Abstract: Planarizing High Temperature Superconductor (HTS) surfaces, especially HTS thin film surfaces is crucial for HTS thin film device processing. Disclosed is a method of surface planarization for HTS film. The method includes first smoothing the HTS surface by Gas Cluster Ion Beam bombardment, followed by annealing in partial pressure of oxygen to regrow the damaged surface layer. A rough HTS surface can be planarized down to a smoothness with a standard deviation of one nanometer or better.

Abstract: Method of preparing zeolite single crystals comprising the step of

Abstract: A method for crystallizing an amorphous silicon layer and for fabricating a thin film transistor. An amorphous silicon layer is formed on a substrate, and patterned to form an active layer by etching the amorphous silicon layer using photolithography. The amorphous silicon layer is crystallized using sequential lateral solidification to form a crystallized active layer having a smooth surface. A smooth surface is obtained by the crystallization process without a subsequent smoothing step by canceling an increased volume of silicon during crystallization for an increased surface of the active silicon layer. The crystallized silicon layer is used to form a thin film transistor by forming a gate insulating layer and a gate electrode on the crystallized active layer, and forming a source and a drain region by doping the crystallized active layer with impurities in use of the gate electrode as a mask.

Abstract: A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa2Cu3O7−x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700° C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Abstract: According to the present invention, a complex (M) which is formed by growing a polycrystalline &bgr;-SiC plate 2 having a thickness of 10 &mgr;m or more on the surface of a single crystal &agr;-SiC base material 1 by the PVD method or the thermal CVD method is heat-treated at a temperature of the range of 1,650 to 2,400° C., whereby polycrystals of the polycrystalline cubic &bgr;-SiC plate 2 are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal &agr;-SiC base material 1 is grown. As a result, single crystal SiC of high quality which is substantially free from micropipe defects and defects affected by the micropipe defects can be produced easily and efficiently.

Abstract: To produce monocrystalline layers of conducting or semiconducting materials on porous monocrystalline layers of the same material in a reproducible and time-saving manner, a method is provided which involves applying an amorphous layer of the same material to the porous material and converting the amorphous layer to a monocrystalline layer by tempering.

Abstract: A method of making an electronic device, according to an exemplary embodiment of the invention, comprises the steps of: forming a polycrystalline substrate in a desired shape; converting the polycrystalline substrate into a single crystal substrate using a solid state crystal conversion process; and forming an electronic element on the substrate. Typically, alumina is formed in the shape of a wafer, sintered to form a densified polycrystalline alumina wafer, and heated to a temperature between the melting point of alumina and one-half the melting point of alumina to convert the densified polycrystalline alumina wafer into a sapphire wafer. A light-emitting diode or other electronic device, such as a laser diode, a high frequency microwave device, or an optoelectronic detector, can be formed on the wafer by depositing layers of semiconductor material on the wafer. The solid state crystal conversion process provides several advantages in forming electronic devices.

Abstract: The single crystal SiC according to the present invention is produced in the following manner. Two complexes M in each of which a polycrystalline film 2 of &bgr;-SiC (or &agr;-SiC) is grown on the surface of a single crystal &agr;-SiC substrate 1 by thermochemical deposition, and the surface 2a of the polycrystalline film 2 is ground so that the smoothness has a surface roughness of 200 angstroms RMS or smaller, preferably 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces 2a′, at a temperature of 2,000° C. or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the polycrystalline films 2 of the complexes M are recrystallized to grow a single crystal which is integrated with the single crystal &agr;-SiC substrates 1. Large-size single crystal SiC in which impurities, micropipe defects, and the like do not remain, and which has high quality can be produced with high productivity.

Abstract: A method for forming an optical device includes the steps of providing a first plate having a first face defining a recess, filling the recess with a material which can be crystallized, and covering the first face and the recess with a second plate having a second face, so that the second face is in contact with the first face and the material in the recess is completely enclosed by the first and second plates. The material in the recess is thereby protected from chemical and mechanical damage, as well as evaporation. In addition, the plates can be transparent, allowing the material in the recess to be visually monitored. A grown crystalline film packed in the cell can be used as a non-liner and/or electro-optical device.

Abstract: A method of crystallizing an amorphous silicon layer to form a polycrystalline silicon layer having uniform and large grain sizes using an improved laser beam profile despite a reduced overlapping ratio. The polycrystalline layer is formed by melting the amorphous silicon layer completely, forming a polycrystalline silicon layer having fine grains by crystallizing the melted silicon layer, re-melting the fine grains in the polycrystalline silicon layer except a portion of the layer at a lower interface thereof, and re-crystallizing the silicon layer including the unmelted portion.

Abstract: A method is presented for crystallizing a thin film on a substrate by generating a beam of pulsed optical energy, countouring the intensity profile of the beam, and illuminating the thin film with the beam to crystallize the thin film into a single crystal lattice structure.

Abstract: A crucible is held in a closed position when the crucible is at a certain temperature. A temperature sensitive member expands differently in response to heat than other portions of the crucible. When the temperature of the temperature sensitive member is increased, the temperature sensitive member expands an amount different than do other portions of the crucible and thereby causes the crucible to open.

Abstract: According to the present invention, a complex (M) which is formed by stacking a polycrystalline .beta.-SiC plate 2 on the surface of a single crystal .alpha.-SiC base material 1 in a close contact state via a polished face or grown in a layer-like manner by the thermal CVD method is heat-treated in a temperature range of 1,850 to 2,400.degree. C., whereby polycrystals of the polycrystalline cubic .beta.-Sic plate are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal .alpha.-SiC base material is grown. As a result, large single crystal SiC of high quality which is free from micropipe defects, lattice defects, generation of grain boundaries due to intrusion of impurities, and the like can be produced easily and efficiently.

Abstract: According to the present invention, a complex (M) which is formed by growing a polycrystalline .beta.-SiC plate 2 on the surface of a single crystal .alpha.-SiC base material 1 by the thermal CVD method is heat-treated at a high temperature of 1,900 to 2,400.degree. C., whereby polycrystals of the polycrystalline cubic .beta.-SiC plate are transformed into a single crystal, so that the single crystal is oriented in the same direction as the crystal axis of the single crystal .alpha.-SiC base material and integrated with the single crystal of the single crystal .alpha.-SiC base material to be largely grown. As a result, single crystal SiC of high quality which has a very reduced number of lattice defects and micropipe defects can be efficiently produced while ensuring a sufficient size in terms of area.

Abstract: A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.

Abstract: A complex (M) which is formed by growing a polycrystalline .beta.-SiC plate 4 by the thermal CVD method on crystal orientation faces which are unified in one direction of plural plate-like single crystal .alpha.-SiC pieces 2 that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400.degree. C., whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal .alpha.-SiC pieces 2 is grown from the crystal orientation faces of the single crystal .alpha.-SiC pieces toward the polycrystalline .beta.-SiC plate 4. As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently.

Abstract: A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

Abstract: A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.

Abstract: A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

Abstract: A method for solid state formation of diamond includes providing a diamond growth substrate, such as single-crystal silicon, forming on the diamond growth substrate an alloy of carbon and a metal which permits carbon to exist in a matrix therein, and causing carbon atoms from the alloy to precipitate on the diamond growth substrate in a diamond cubic lattice. The alloy may be an alloy of aluminum and carbon. The alloy is annealed in a hydrogen ambient to cause diffusion of hydrogen through the alloy to the surface of the substrate, providing a high concentration of hydrogen at the interface between the substrate and the alloy. The alloy is heated to cause carbon atoms in the alloy to diffuse through the alloy to the interface and form diamond.

Abstract: A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation.

Abstract: A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material.

Abstract: The invention provides a method of manufacturing a large-area electronic device, for example a flat panel display, comprising thin-film circuit elements, and also laser apparatus for crystallizing a portion of a semiconductor thin-film (1) with a beam (11) of set energy. The energy of the beam (11) is set in accordance with the output from a light detector (22) to regulate the crystallization of a device portion (3,4 and/or 5) of a semiconductor thin film (1) at which the beam (11) is subsequently directed with its set energy. The light detector (22) monitors the surface quality of a previously crystallized portion (2). In accordance with the present invention, the light detector (22) is located at a position outside the specular reflection path (25) of the light returned by the surface area of the crystallized portion (2) and detects a threshold increase (D) in intensity (I.sub.s) of the light (26) being scattered by the surface area of the crystallized portion.

Abstract: A process for producing a semi-insulating InP single crystal and a semi-insulating InP single crystal are disclosed. The process comprises: a first step heat-treatment for heating an undoped InP single crystal having a concentration of a residual impurity of 0.05 ppmw or less containing at least one of Fe, Co and Cr, at a temperature of not less than 930.degree. C. and less than 1000.degree. C. in an atmosphere of phosphorous vapor pressure in the ampoule which is not less than a dissociation pressure of InP in equilibrium at the temperature and which is not more than 15 atm; and a second step heat-treatment for thereafter heating the InP single crystal at a temperature of not less than 662.degree. C. and less than 900.degree. C. in an atmosphere of phosphorous vapor pressure in the ampoule which is not less than 5 atm nor more than 50 atm. The semi-insulating InP single crystal substrate has a uniformity of mobility not more than 10% on the surface of the substrate.

Abstract: The surface 1a of a single crystal .alpha.-SiC substrate 1 is adjusted so as to have a surface roughness equal to or lower than 2,000 angstroms RMS, and preferably equal to or lower than 1,000 angstroms RMS. On the surface 1a of the single crystal .alpha.-SiC substrate 1, a polycrystalline .alpha.-SiC film 2 is grown by thermal CVD to form a complex is placed in a porous carbon container and the carbon container is covered with .alpha.-SiC powder. The complex is subjected to a heat treatment at a temperature equal to or higher than a film growing temperature, i.e., in the range of 1,900 to 2,400.degree. C. in an argon gas flow, whereby single crystal .alpha.-SiC is integrally grown on the single crystal .alpha.-SiC substrate 1 by crystal growth and recrystallization of the polycrystalline .alpha.-SiC film 2. It is possible to stably and efficiently produce single crystal SiC of a large size which has a high quality and in which any crystal nucleus is not generated.