Abstract: This invention provides a substrate processing method including a step of covering in advance the surface of a substrate W with water (28), a step of holding the substrate W generally horizontally with the surface facing upward and rotating it in a horizontal plane (10), and a step of blowing to the substrate top surface drying gas flow that is thin in area in comparison with the substrate W surface (30, 40), in which the water is removed from the substrate top surface by the rotation in the horizontal plane while blowing the drying gas flow, a substrate processing apparatus for implementing the above method, and a control program for use with the above method and apparatus. With this invention, it is possible to dry a cleaned substrate without locally leaving water droplets.

Abstract: The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate.

Abstract: A system and method for coating lenses includes loading at least one lens into a spindle assembly, which transfers the lens into a coating station. The at least one lens may include a pair of lenses, which are simultaneously loaded into the spindle assembly for transfer into the coating station. The system may further include a washing and drying station and a curing station to receive lens assemblies before and after coating and the spindle assembly may include a plurality of spindle assemblies for sequential transfer of a plurality of lenses, or lens pairs, into and out from each station of the system.

Abstract: An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A system and a method to protect an image on a substrate. The method includes applying a coating to the surface of a substrate having an unspread ink image thereon, wherein the image is formed by droplets of solid ink, and wherein the coating interacts with the ink. Moreover, the method includes spreading the coated ink on the surface of the substrate, wherein the ink and the coating interact during the spreading process and wherein the spread ink on the surface of the substrate forms the continuous image.

Abstract: A method and system for depositing a thin film on a substrate using a vapor deposition process is described. The processing system comprises a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, and a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate. Furthermore, a heat source is coupled to the gas distribution system, wherein the heat source comprises one or more heating elements coupled to a power source, and wherein the one or more heating elements are disposed on an interior surface of the gas distribution system or embedded within the gas distribution system or both, and configured to interact with the firm forming composition and cause pyrolysis of one or more constituents of the film forming composition when heated.

Abstract: A method forms a resin film on a substrate by depositing droplets of resin liquid by an inkjet method. The method includes: a first resin liquid arrangement step of arranging a plurality of droplets of a first resin liquid separately from each other on a substrate in such a manner that the droplets do not make contact with each other; a first resin liquid curing step of curing at least a surface of each of the droplets of the first resin liquid arranged on the substrate; a second resin liquid arrangement step of arranging a plurality of droplets of a second resin liquid at substantially central positions between the droplets of the first resin liquid on the substrate, after the at least the surface of each of the droplets of the first resin liquid is cured; and a second resin liquid curing step of curing the droplets of the second resin liquid arranged on the substrate.

Abstract: A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure.

Abstract: A method for liquid phase deposition of crystalline silicon thin films, and a high efficiency solar cell that is fabricated using crystalline silicon thin film technology, has the performance of a crystal silicon solar cell, but at the cost level per unit area of a solar cell fabricated using an amorphous silicon thin film. The crystal thin film uses only 10% or less of the amount of silicon used in a wafer-based solar cell. Because of the maturity of silicon technology in semiconductor industry, this approach not only enables high volume, automated production of solar cells on a very large, low-cost substrate, but also increases the area throughput up to 10000 cm2/min from 942 cm2/min in case of CZ crystal growth.

Abstract: An apparatus and method for applying a fluid spin-on material on a surface of first and second substrates. A spin coating device is configured to dispense the fluid spin-on material to form a first layer on the surface of the first substrate. A metrology tool is configured to measure a first thickness profile of the first layer and generate data representing the first thickness profile. A processing unit is electrically coupled with the metrology tool and is configured to analyze the data received from the metrology unit and to determine a variation in the first thickness profile. The processing unit then determines an adjustment to an operational parameter of the spin coating device predicted to reduce a variation in a second thickness profile of a second layer subsequently formed by the spin coating device on a second substrate.

Abstract: A substrate processing apparatus that is arranged adjacent to an exposure device includes a processing section including a first processing unit and a second processing unit. The first processing unit includes a development region, a first cleaning region, and a first transport region. The development region and the first cleaning region are arranged opposite to each other with the first transport region interposed therebetween. The second processing unit includes a reversing region, a second cleaning region, and a second transport region. The reversing region and the second cleaning region are arranged opposite to each other with the second transport region interposed therebetween. The second processing unit is arranged between the first processing unit and the exposure device. The substrate processing apparatus also includes a transfer section coupled to the processing section and an interface configured to receive and transfer the substrate between the processing section and the exposure device.

Abstract: A disclosed heating apparatus for heating a substrate on which a film is coated includes a process chamber having a gas supply opening for supplying a first gas to the process chamber and a gas evacuation opening for evacuating the first gas from the process chamber; a heating plate that is arranged in the process chamber and includes a heating element for heating the substrate; plural protrusions arranged on the heating plate so as to support the substrate; plural suction holes formed in the heating plate so as to attract by suction the substrate toward the heating plate; and a gas inlet adapted to supply a second gas to a gap between the heating plate and the substrate supported by the plural protrusions.

Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Abstract: An actinic radiation curable magenta ink composition containing a quinacridone series pigment, a dispersing agent, a photo-polymerizable compound and a photo-polymerization initiator, wherein a surface of a coated layer with the magenta ink composition on a porous medium exhibits a 60°-glossiness defined in JIS 5600 in the range of 95 to 140, provided that the coated layer is formed by coating the magenta ink composition with a bar coater on the porous medium having a void ratio of 50 to 70% and a 60°-glossiness defined in JIS K 5600 of 30 or more, and then standing still for 30 minutes.

Abstract: A method of suppressing deposition of radionuclides on components of a nuclear power plant comprises forming a ferrite film by contacting a first chemical including iron (II) ions, a second chemical for oxidizing the iron (II) ions to iron (III) ions, and a third chemical for adjusting the pH of a processing solution containing a mixture of the first and second chemicals to be 5.5 to 9.0 with the metal member surface in a time period from a finishing stage in decontamination step of removing contaminants formed on the surface of metal member composing the nuclear power plant, and suppressing deposition of radionuclides on the metal member by the ferrite film.

Abstract: A gas sprayer mounted on an edge removing robotic arm is disclosed, wherein the edge removing robotic arm circles around along the edges of a substrate and sprays a chemical solvent over the edge surface of the substrate to dissolve photoresist materials attached to the edges of the substrate; the edge removing robotic arm has a pumping conduit for sucking out the chemical solvent sprayed over the surface of the substrate and dissolved photoresist particles; the gas sprayer is mounted on the top of the edge removing robotic arm and comprises a hooked nozzle extending forward around the front end of the edge removing robotic arm and facing an opening of the pumping conduit to spray gas out so as to prevent the chemical solvent sprayed out from the edge removing robotic arm from splashing onto the interior of the substrate.

Abstract: Disclosed is a method and apparatus for fabricating a patterned thin film layer within a flat panel display that employs a soft mold and heat treatment in place of a photolithographic process. The disclosed method may reduce process time as well as substantially minimize pattern deformities.

Abstract: A method for manufacturing a cylindrical fuel cell having a first catalyst layer, an electrolyte layer and a second catalyst layer, comprising forming the first catalyst layer on the outer surface of a cylindrical support by a spraying method, forming the electrolyte layer on the first catalyst layer by a spraying method, and forming the second catalyst layer on the electrolyte layer by a spraying method, wherein each of the forming is conducted in a continuous manner. An apparatus for manufacturing a fuel cell is also disclosed.

Abstract: A machine and process useful for processing a delicate workpiece, e.g., an implantable medical device, includes a carrier having a mandrel and wheels. The work piece is positioned on the mandrel, which is free to roll by gravity on rails which cooperate with the wheels to self-align the travel of the carrier. The carrier can move the workpieces through a series of processing steps by gravity feed and without human intervention. A laterally movable carriage receives the rolling carriers and moves the carrier for processing, and returns the carrier to the rails to again roll by gravity to another processing substation for additional processing. An elevator, which can including processing units itself, is positioned along the rails to receive carriers and raise them so they can continue to roll for further processing.

Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

Abstract: A method of coating a substrate comprises pre-heating an area of a surface layer of the substrate for a duration of time, and depositing a coating precursor material over the heated area within a preset time window of the heating step, wherein the temperature of the heated area remains suitable for enhancing the bond between the coating precursor material and the substrate. The pre-heating and coating steps may be repeated many times at desired frequency and over the entire area of the surface of the substrate, and may be conducted in a low pressure environment or vacuum. Also disclosed is an apparatus the inventive method which comprises a heating component, a depositing component for depositing intermittently a coating precursor material to the substrate, and a suitable controlling component.

Abstract: A dope producing apparatus is provided with a first feed line for sending polymer solution from a fourth tank to a solution casting apparatus. The first feed line is provided with a first orifice for adding dilute liquid to the polymer solution; a first inline mixer for inline-mixing the polymer solution and the dilute liquid to produce a mixture; a second orifice for adding matting liquid to the mixture; and a second inline mixer for mixing the mixture and the matting liquid to produce a first dope.

Abstract: The present invention provides a method for drying an applied film formed by applying an application liquid containing an organic solvent to a traveling long support medium, wherein the temperature Tb of the long support medium before application is not less than 2° C. lower than the temperature Tc of the application liquid and the wind velocity in the vicinity of the applied film after application is not more than 0.5 m/s, thereby the applied film is dried uniformly in the initial drying of the applied film.

Abstract: There is provided a plating apparatus and method which can control the temperature of a plating solution during plating more uniformly and easily form a uniform plated film on the to-be-plated surface of a workpiece, and which can simplify the device and decrease the footprint. The plating apparatus includes a plating bath having a double bath structure including an inner bath for holding a plating solution and carrying out plating, and an outer bath which surrounds the inner bath and is in fluid communication therewith. A heating device is disposed in the outer bath. The plating apparatus may further include means for circulating or stirring the plating solution in the plating bath.

Abstract: An apparatus for maintaining constant exhaust flow during processing of a semiconductor substrate is provided. For example, the apparatus may include an inlet and an outlet. The apparatus may also include a throttle valve stage coupled to the inlet. The throttle valve stage may include a throttle valve plug located within the throttle valve stage. The throttle valve plug is configured to control the amount of airflow through the throttle valve stage by modulating the distance between the throttle valve plug and faces of the throttle valve stage. The apparatus may further include a floating plunger stage coupled to the throttle valve stage. The floating plunger stage additionally includes a floating plunger. A surface of the floating plunger receives a controlled pressure which allows the floating plunger to move and vary an opening between the floating plunger and the outlet. Furthermore, the apparatus includes a guide pin.

Abstract: A method and apparatus for maintaining constant exhaust flow during processing of a semiconductor substrate is provided. For example, the apparatus may include an inlet and an outlet. Furthermore, the apparatus may include a throttle valve stage coupled to the inlet. The throttle valve stage includes a throttle valve plug located within the throttle valve stage. The throttle valve plug is configured to control the amount of airflow through the throttle valve stage by modulating the distance between the throttle valve plug and faces of the throttle valve stage. The apparatus further includes a floating plunger stage coupled to the throttle valve stage. The floating plunger stage includes a floating plunger coupled to a flexible attachment. The flexible attachment allows the floating plunger to move in a controlled manner to vary an opening between the floating plunger and the outlet.

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically barrier-to-copper interface. An exemplary method of preparing a substrate surface of a substrate to deposit a metallic barrier layer to line a copper interconnect structure of the substrate and to deposit a thin copper seed layer on a surface of the metallic barrier layer in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes cleaning an exposed surface of a underlying metal to remove surface metal oxide in the integrated system, wherein the underlying metal is part of a underlying interconnect electrically connected to the copper interconnect.

Abstract: A method for creating colored pine straw comprising chopping a quantity of pine straw; spraying the pine straw with a coloring agent; drying the pine straw and; placing the dried pine straw into containers.

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system.

Abstract: A system and a method are provided for ink-jet printing a solderable conductive pad onto a substrate. The system comprises at least one print head and a curing station for curing an ink deposited onto the substrate. The system is configured to: deposit at least a first layer of a first ink onto the substrate; cure the first layer of the first ink; deposit at least an intermediate layer of a second ink on top of the cured first layer of the first ink; cure the intermediate layer of the second ink; deposit at least a last layer of the first ink on top of the cured intermediate layer of the second ink; and cure the last layer of the first ink. The first ink has a relatively high conductivity. The second ink has a relatively low conductivity. The first layer, the intermediate layer, and the last layer may be arranged such that when solder is applied to the last layer, the solder is prevented from leaching through to the first layer.

Abstract: The present invention provides a substrate carrying and processing apparatus which is intended to reduce the size of the space for storing substrates in each substrate storing section as much as possible so as to downsize the apparatus and increase the number of substrates to be stored therein as well as to enhance the throughput. The substrate carrying and processing apparatus comprises a carrier block S1 which is adapted to position carriers 20 each receiving wafers W therein, a processing block S2 including processing units U1 to U4, 31 used for processing each wafer, a main arms A1 adapted to transfer each wafer to each processing unit, a rack unit U5 which is disposed between the carrier block and the processing block and able to store wafers to be processed, and a transfer arm D adapted to transfer each wafer to the rack unit.

Abstract: A multi-stage substrate processing apparatus in which each processing stage is carried out on a substrate while conveying said substrate includes a processing liquid supply device and a drying device arranged successively along a conveying direction of the substrate. The drying device comprises an air knife for drying a processing liquid on the substrate. A plurality of nozzles for supplying the processing liquid onto the substrate are provided in the processing liquid supply device. At least the nozzle in the final stage among the plurality of nozzles is pointed in an opposite direction to the conveying direction of the substrate. This apparatus shortens tact time of the processed substrate.

Abstract: The present invention simplifies the equipment in an on-machine coater in which a size press and a post-metering style of coater are alternatively used. In an on-machine coater including a size press 3, an air turn 4 arranged diagonally downward on the downstream side of the size press 3, a post-metering style of coater 6 arranged in the downstream side of the air turn 4, and non-contact dryers 11 arranged above the coater 6, when the coating is performed using the size press 3 the two surfaces of a web A are dried by a pair of the non-contact dryers 11 opposingly provided about the diagonally upward-moving web A on the downstream side of the air turn 4. When the coating is performed using the post-metering style of coater 6, the dryer of the pair of non-contact dryers 11 used to dry the lower surface side of the web A is moved in such a way as to oppose the lower surface side of the web A which, beyond the coater 6, moves upward.

Abstract: The coating apparatus includes a base for supporting a slot die, wherein the base has a height of not more than 5 m from a ground level, and a mean cross sectional area of not less than 3 m2 in terms of a horizontal direction.

Abstract: A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid distribution member and contacts the backside of the substrate, thus heating the substrate. The fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side or processing side of the substrate.

Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Abstract: The invention relates first of all to a method for covering areas of damaged protective coating on containers or the like, in which, according to the invention, protective coating material is stamped on to the zone in which the damaged areas occur. The invention also describes an apparatus for carrying out the method in which a carrier unit is provided for stamping protective coating material on to the damaged area. Apparatus is provided for positioning the carrier unit with respect to the container.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: A method for forming a coating film on an internal surface of an elongated tube, includes longitudinally holding the elongated tube, applying a coating solution to the internal surface of the elongated tube; and drying the coating solution while carrying out a heat process for sequentially heating the elongated tube by using a heat source. The heat process includes adjusting the descending rate of the heat source so that a through-hole in the elongated tube is clogged with the coating solution whose viscosity is reduced by heating of the heat source, and sucking the through-hole in the elongated tube from the lower side thereof so that a portion of the through-hole that is clogged with the coating solution moves downwards along the elongated tube.

Abstract: An apparatus for treating polymeric sheet material to improve surface adhesion thereof. The apparatus comprises a preheating station, a treatment station, a rinsing station, a drying station and a reeling station. In the treatment station spray nozzles are used to contact a surface of the material with an oxidizer (NaOCl) and an activator (succinic acid) at an elevated temperature to shorten the treatment time. A spent treatment disposal system is disclosed along with a scrubber for cleaning the atmosphere of the treatment and rinsing stations. Alternatively, treatment is accomplished in a heated, agitated bath.

Abstract: A process includes coating a cylinder having an inner wall and a cylinder axis with a gel coating on the inner wall. Then a specimen mixture including solvent is made to flow through the cylinder while the cylinder is being continuously rotated. The specimen mixture is initially directed to flow along the cylinder axis and such that specimen particles from the specimen mixture are accelerated off the cylinder axis toward the inner wall, so as to form a film of specimen particles embedded into the gel coating.

Abstract: Apparatus for forming a thin film pattern on the surface of a substrate. This apparatus is provided with: a transfer member having a thin film carrying surface which carries a thin film pattern; and a thin film transfer mechanism for joining the transfer member to a substrate for transferring, to the substrate, the thin film pattern on the thin film carrying surface. The thin film pattern may be a wiring film pattern. A gelatinous film may previously be formed on the substrate, and the thin film pattern may be transferred as embedded in the gelatinous film.

Abstract: An aging unit (DAC) for processing a wafer W having a coated film formed thereon includes a disposing plate, a temperature control circulating device for controlling the temperature of the disposing plate, a chamber, a gas supply mechanism for supplying an ammonia gas containing a water vapor into the chamber, an input section for inputting the processing time of the wafer W, and a control device for controlling the temperature of the disposing plate, the supply rate of the ammonia gas, and the amount of the water vapor contained in the ammonia gas so as to permit the processing of the wafer W to be finished in the processing time inputted into the input section.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: A method and apparatus for baking a film onto a substrate. A film, such as a layer of photoresist, is disposed on a first surface of a substrate while a second surface is exposed to a liquid bath. The liquid bath is maintained at a pre-selected temperature. Exposure of the substrate to the liquid bath allows the film on the opposite surface to bake. The liquid bath is then re-circulated to maintain a constant and uniform temperature gradient across the substrate.

Abstract: A method for continuously introducing a substance in liquid phase into plastics granules comprising: a) feeding a substantially continuous flow of the plastics granules to at least one substantially static spraying chamber, b) spraying the substance in liquid phase onto the plastics granules, c) passing the granules partially or totally coated by the substance in liquid phase by a substantially static mixing means supported in at leas one mixing chamber provided downstream of the spraying chamber, d) submitting the mixed granules to drying for a time sufficient to allow a substantially complete absorption of the substance in liquid phase by the granules.

Abstract: Coating an insulating film on a substrate, heating the substrate at a pressure higher than an atmospheric pressure in a chamber, followed by the curing process performed at a pressure lower than the atmospheric pressure in a separate chamber. With this process, the desorption of the porogen from the insulating film during heating can be restrained therefore an insulating film of high quality can be formed.

Abstract: The wafer coated with the resist is deliberately placed in the vapor before being transferred to an aligner that exposes the resist on the wafer, the vapor, for example, the moisture, uniformly adheres onto the resist on the wafer. As a result, the substrate can uniformly be exposed in the following exposing process, and the uniformity of the line width and the like can be improved.

Abstract: An apparatus that exposes only a selected portion of a length of optical fiber to a hydrogen atmosphere loading process. The apparatus includes a loading chamber that encloses at least the selected portion of the optical fiber and contains a hydrogen hydrogen atmosphere. At least one heating element regionally heats the hydrogen atmosphere surrounding the selected portion. The heating element may heat the hydrogen atmosphere to a temperature of at least 250° C.