Abstract: Preferably, obtaining internal and external thermal measurement values of a sealed process chamber allows a control system to generate a control signal based on a comparison of the internal and external thermal measurement values to the predetermined value. The control signal is provided to a fluid handling system, wherein the fluid handling system modulates flow of a first fluid around the exterior of the sealed process chamber. The control signal is further provided to a closed loop heat exchange system, wherein the closed loop heat exchange system modulates flow of a second fluid within an interior cavity of the sealed process chamber based on the control signal. The control signal is still further provided to an open loop heat exchange system, wherein the open loop heat exchange system modulates flow of a third fluid within the interior of cavity of the sealed process chamber.

Abstract: A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.

Abstract: Vapor deposition apparatus for forming stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through the apparatus are provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus, a second sublimation compartment positioned over a second deposition area of said apparatus, and an internal divider positioned therebetween and defining a middle seal member. An actuator is attached to the internal divider and is configured to move the internal divider to control intermixing of first source material vapors and second source material vapors within the first deposition area and the second deposition area. Methods are also generally provided for depositing stacked thin films on a substrate.

Abstract: According to one example there is provided a system for applying fluid to a substrate using a first and second array of fluid applicators.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: Embodiments of the invention provide systems and methods for insulating a component of a home or building. An insulated component may include a generally planar surface and a frame positioned atop one side of the generally planar surface. The frame may include a plurality of outer studs coupled together to form an outer periphery and inner studs that divide the frame into one or more sections. One or more of the sections may include a cavity or hollow space. The insulated component may also include a first layer of insulation within one or more of the cavities. The first layer of insulation may include a pour insulation material that transitions from a liquid state or phase to a solid state or phase.

Abstract: A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.

Abstract: An approach is provided to cause an operation comprising one or more of a substrate tamping process, a substrate offset process, and a mechanism actuation process. The approach involves determining an instruction to cause the operation. The approach also involves causing a movement of one or more of a slide element and a shaft based on the instruction. The slide element and the shaft are configured to move in a first direction and a second direction along a length of the shaft. The movement in the first direction and the second direction of one or more of the slide element and the shaft corresponds to the operation.

Abstract: A liquid processing apparatus includes multiple substrate holding units each configured to horizontally hold a substrate and arranged in a left/right direction; a moving unit that is spaced from an arrangement of the substrate holding units in a forward/backward direction and is moved in the left/right direction; a nozzle standby unit, provided between a movement path of the moving unit and the arrangement of the substrate holding units, at which a nozzle that supplies a processing liquid to the substrate held by the substrate holding unit is on standby; and a rotatable arm having one end at which a nozzle holding unit that detachably holds the nozzle and the other end rotatably provided at the moving unit. The nozzle is transferred between the nozzle standby unit and a supply position where the processing liquid is supplied to the substrate together by the moving unit and the rotatable arm.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A paint station may include a frame with a table attached to it. A track may run along the length of the table. A bridge may be connected to the track and may move along the track. The bridge may extend across the width of the table. A painting component may be attached to the bridge and may move along the bridge. Therefore the painting component may run along two axes over the table. A computer may be connected to the paint station to direct the movement of the painting component along the two axes. A user may place a clothing apparel on the table and may input a command to paint a desired design on the clothing apparel.

Abstract: Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source.

Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Abstract: Control of locating equipment used by a locate technician to perform a locate and/or marking operation to detect and/or mark a presence or an absence of at least one underground facility at a work site is based at least in part on marking specifications (e.g., government-based regulations, industry-based recommended guidelines/best practices, standard operating procedures of locate companies and/or facility owners, and/or contractual obligations relating to marking operations). In various examples, control signals are generated to alert a locate technician when to start and stop dispensing of a marking material, or control signals are generated to automatically or semi-automatically control dispensing of the marking material by a marking device, so as to facilitate compliance with marking specifications.

Abstract: A device and a method for improving uniformity of a film, which uses the controllable magnets instead of permanent magnets and controlling the magnetic polarity by a programmable control device, so that when the clamping frame is aligned with the mask, the magnetic polarity of the electromagnet is controlled to generate an alternating magnetic field which will affect the coating material sprayed from the evaporation source. With the help of the alternating magnetic field, the coating material will be evenly sprayed to a substrate. Consequently, uniformity of the film for coating and the yield of products are improved.

Abstract: The present disclosure discloses an electromagnetic vapor deposition apparatus comprising a plurality of electromagnets which form a plurality of electromagnetic regions when electronic current passes through. A programmable control equipment is electronically connected to each magnet unit to control magnetic polarity and magnetic intensity of each magnet unit. The programmable control equipment can adjust the magnetic intensity of each of the plurality of electromagnetic regions to adsorb the metal mask tightly. Meanwhile, the problem of colors mixing is overcome.

Abstract: The disclosure relates to a method and apparatus for preventing oxidation or contamination during a circuit printing operation. The circuit printing operation can be directed to OLED-type printing. In an exemplary embodiment, the printing process is conducted at a load-locked printer housing having one or more of chambers. Each chamber is partitioned from the other chambers by physical gates or fluidic curtains. A controller coordinates transportation of a substrate through the system and purges the system by timely opening appropriate gates. The controller may also control the printing operation by energizing the print-head at a time when the substrate is positioned substantially thereunder.

Abstract: A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided.

Abstract: An apparatus and method for manufacturing an interconnect structure to provide ohmic contact in a semiconductor device is provided. The method includes providing a semiconductor device, such as a transistor, comprising a substrate, a gate dielectric, a gate electrode, and source and drain regions in the substrate. An ultra-thin interfacial dielectric is deposited by chemical vapor deposition (CVD) over the source and drain regions, where the interfacial dielectric can have a thickness between about 3 ? and about 20 ?. The ultra-thin interfacial dielectric is configured to unpin the metal Fermi level from the source and drain regions. Other steps such as the deposition of a metal by CVD and the cleaning of the substrate surface can be performed in an integrated process tool without a vacuum break. The method further includes forming one or more vias through a pre-metal dielectric over the source and drain regions of the substrate.

Abstract: A system and method for combinatorial processing of substrates in a processing chamber. The system includes a plurality of generators for supplying power into the processing chamber. A plurality of sputter guns provides power to different regions of a substrate. A switchbox switches power from a generator to a sputter gun via a plurality of coaxial switches. A controller positioned within the switchbox automatically distributes power from a specific generator to a specific sputter gun under programmable logic control.

Abstract: A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

Abstract: A seed treatment apparatus provides for minimal waste of products for treating seeds, in that it is precisely controllable and automatically adjustable. A volume of seeds to be treated and a flow rate of treatment product for treating the seeds can both be sensed. At least one of the flow rate of the treatment product and the volume of seeds can automatically be adjusted if it is determined that a ratio of the flow rate of treatment product to the volume of seeds is not the same as a predetermined flow rate to volume ratio.

Abstract: A source gas supply unit includes a carrier gas supply unit for supplying a carrier gas into a raw material tank, and a control unit. The control unit executes steps of: supplying the carrier gas to the raw material tank while varying a flow rate of the carrier gas without forming a film on a substrate, and storing a vaporization flow rate table showing the correspondence between a vaporization flow rate of the vaporized raw material contained in a source gas and a carrier gas flow rate set value; obtaining a carrier gas flow rate set value corresponding to a specified vaporization flow rate set value by using the vaporization flow rate table; and generating the source gas by supplying the carrier gas into the raw material tank based on the obtained carrier gas flow rate set value and supplying the generated source gas to a film forming unit.

Abstract: An embossing die is created by printing multiple ink layers (530, 540) in superposition thereby to build up a printed relief pattern (510) in accordance with received design data specifying a design to be embossed. The design data is modified after receipt to introduce into the printed relief pattern to be built, one or more channels (610) which extend depth-wise through multiple ink layers of the printed relief pattern (510) and serve to fully or partially segment the printed relief pattern.

Abstract: One or more techniques or systems for ion implantation are provided herein. A pressure control module is configured to maintain a substantially constant pressure within an ion implantation or process chamber. Pressure is maintained based on an attribute of an implant layer, pressure data, feedback, photo resist (PR) outgassing, a PR coating rate, a space charge effect associated with the implant layer, etc. By maintaining pressure within the process chamber, effects associated with PR outgassing are mitigated, thereby mitigating neutralization of ions. By maintaining charged ions, better control over implantation of the ions is achieved, thus allowing ions to be implanted at a desired depth.

Abstract: An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.

Abstract: A system includes a tuning element comprising a shaft and a tuning stub. The tuning stub includes a surface with a center point. The shaft is connected to the surface of the tuning stub at a location that is offset from the center point. A waveguide includes an opening into an inner portion of the waveguide. The shaft passes through the opening and the tuning stub is arranged in the inner portion of the waveguide. A first actuator selectively rotates the shaft.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes preparing a substrate having an underlying pattern and a mold having a concave/convex pattern. The method cures the resin in an uncured region and separate the mold from the resin. The curing the resin includes first and second curing processes. When the uncured region is provided in a plurality, the first process includes performing position alignment of the mold with reference to the substrate, determining a positional displacement amount of the concave/convex pattern with reference to the underlying pattern, and curing the resin in the uncured region having the smallest positional displacement amount. The performing, the determining and the curing are repeated until the uncured regions are reduced to one. When the uncured region is one, the second process includes performing position alignment of the mold with reference to the substrate, and curing the resin.

Abstract: A system and process for inter alia coating a substrate such as glass with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin scratch-resistant aluminum oxide film deposited on one or more sides of a transparent and shatter-resistant substrate for use in consumer and mobile devices such as watch crystals, cell phones, tablet computers, personal computers and the like. The system and process may include a reactive thermal evaporation technique. An advantage of the reactive thermal evaporation technique includes using arbitrarily high oxygen pressures, allowing for higher growth rates of aluminum oxide at the surface of the substrate and, ultimately, a less expensive process. Another advantage of this reactive thermal evaporation process is that it does not utilize electrical fields typically found in traditional reactive sputtering techniques.

Abstract: An apparatus for purge to prevent AMC & natural oxide includes an FOUP configured to contain wafers and to have a receipt supply hole for supplying gas and a receipt discharge hole for discharging the gas at a lower part of the FOUP; stage units each configured to have the FOUP separated therefrom or seated therein, to support the seated FOUP, and to have a gas supply hole for supplying the gas at a position corresponding to the receipt supply hole and a gas discharge hole for discharging the gas at a position corresponding to the receipt discharge hole; a first gas supply port unit disposed in response to the gas supply hole and configured to supply the gas to the FOUP; and a first gas discharge port unit disposed in response to the gas discharge hole and configured to discharge the gas from the FOUP.

Abstract: An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions and hydrogen molecular ions comprising H3+ ions. The apparatus further includes a substrate chamber adjacent the plasma source system and in communication with the plasma source system via one or more apertures, an extraction system to extract the hydrogen molecular ions and helium ions from the plasma source system, and an acceleration system to accelerate extracted helium and hydrogen molecular ions to a predetermined energy and direct the extracted helium ions and hydrogen molecular ions to a substrate.

Abstract: An improved system for applying a coating to a sheet is disclosed. The system allows precise control of the actuation of the valves and movement of the nozzle to create a plurality of coating profiles. The system includes a controller, which is used to actuate the valves to begin and terminate the flow of material onto the sheet through a nozzle. In addition, the controller may move the nozzle from its operative position to an inoperative position away from the sheet. In some embodiments, a fluid displacement mechanism is used. The controller is also able to coat the opposite side of the sheet. Registration of the coating can be programmed to be in exact alignment, or advanced or delayed by a specific amount.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, an actuator which controls a parameter constituting a plasma processing condition, N+1 correction amount calculating units which calculate a correction amount of a manipulated variable on the basis of a difference between a process monitor value monitored by the process monitor and a desired value of the process monitor and a correlation between the process monitor value and a manipulated variable, which is the parameter, the correlation having been acquired in advance, and N manipulated variable adding units that add a manipulated variable having a priority level next to an N-th manipulated variable. The N-th manipulated variable adding unit defines a correction amount calculated by the N+1-th correction amount calculating unit as the correction amount of an N+1-th manipulated variable.

Abstract: A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supp

Abstract: A system for coating articles which includes a coating booth, a conveyor system, which guides the articles through the coating booth, and at least one application unit, which is carried and guided by a handling device. A central supply unit having a tank for storing CO2 in liquid or solid form and which is able to remove CO2 from the tank and supply it at a suitable pressure to a collecting line connected to at least one cleaning apparatus, which includes at least one nozzle of suitable design for delivering CO2 for cleaning purposes. Under program control a relative movement between the nozzle and the application unit is induced, such that all surfaces of the application unit to be cleaned can be reached by CO2.

Abstract: A liquid crystal dispensing system includes a container to contain liquid crystal to be dispensed, a discharge pump to receive the liquid crystal from the container and to discharge the liquid crystal, a nozzle to dispense the liquid crystal discharged from the discharge pump onto a substrate, and a control unit to control a dispensing amount of liquid crystal discharged from the discharge pump and to compensate the dispensing amount when the dispensing amount of liquid crystal exceeds a limitation value.

Abstract: An automated paint application system for automatically, safely and efficiently painting an image onto a structure. The automated paint application system generally includes an first track and a second track which are secured to a structure in parallel relationship with each other. An applicator mount is secured between the upper and second tracks. Sprockets are utilized on the tracks to allow the applicator mount to horizontally traverse the tracks. A paint applicator movably secured to the applicator mount through use of an applicator sprocket such that the paint applicator may vertically traverse the applicator mount. A controller may be provided to wirelessly direct the present invention to position itself and dispense paint in a manner which automatically paints an image on the structure.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system.

Abstract: An inkjet printing method, system, and computer-usable tangible storage device to print cells and biomaterials for three-dimensional cellular scaffolds and engineered skin grafts are disclosed. The process simultaneously deposits living cells, nutrients, growth factors, therapeutic drugs along with biomaterial scaffolds at the right time and location. This technology can also be used for the microvasculature fabrication using appropriate human microvascular endothelial cells and fibrin to form the microvasculature. When printing human microvascular endothelial cells in conjunction with the fibrin, the cells aligned themselves inside the channels and proliferated to form confluent linings. The 3D tubular structure was also found in the printed patterns. Simultaneously printing biological materials to form a three-dimensional cellular scaffold promotes human microvascular endothelial cell proliferation and microvasculature formation.

Abstract: Methods and systems for adapting and/or tuning feedforward control parameters in a plasma processing chamber. In embodiments, a dependent process parameter, such as a chamber component temperature, is controlled with a feedforward control algorithm based on one or more independent process parameters, such as RF power. A control algorithm may calculate steady-state deviation of the dependent parameter from a process recipe setpoint, estimate an amount by which an existing control gain coefficient is to be changed to better achieve the setpoint, associate the new control gain coefficient with the particular recipe operation, and store the new control gain coefficient for subsequent execution of the recipe operation. In embodiments, the amount by which a gain coefficient is to be changed is based on a model function derived from a lookup table associating gain coefficients with setpoints of the dependent process parameter and values of the independent process parameter.

Abstract: Disclosed are coating apparatus including flow coating and roll-coating that may be used for uniform sol-gel coating of substrates such as glass, solar panels, windows or part of an electronic display. Also disclosed are methods for substrate preparation, flow coating and roll coating. Lastly systems and methods for skin curing sol-gel coatings deposited onto the surface of glass substrates using a high temperature air-knife are disclosed.

Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Abstract: An ejection device in which a multi-nozzle mechanism including failure nozzles ejects droplets such that variation in amounts of droplets (spacers) is prevented and droplets are disposed on spacer regions of a substrate. An ejection device includes a multi-nozzle mechanism including a pair of nozzle row units prepared by equally dividing a nozzle row including a plurality of nozzles ejecting a spacer dispersion liquid, a moving mechanism relatively moving the multi-nozzle mechanism and a substrate in the longitudinal direction and the align direction of spacer regions, and a control mechanism controlling the nozzles and the moving mechanism. When one nozzle row unit includes a failure nozzle, the control mechanism gives a command to the failure nozzle not to eject the liquid and a command to a corresponding nozzle of the other unit to halve cycles of forward and backward paths.

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: A mole delivery system and method provide pulses of known molar quantities as a function of the time duration of each pulse, which in turn is derived as a function of the ideal gas law. In one embodiment of the system, the system comprises: a chamber of known volume and controlled and known temperature; a pressure sensor to measure the pressure in the chamber; an outlet valve to a process tool; an inlet valve to charge the chamber with the delivery gas; and a control system configured and arranged so as to control the operation of the outlet valve, control the amount of each gas pulse by controlling the timing of the valve to the process tool.

Abstract: A coating system comprises: a coating apparatus connected to a syringe filled with a coating agent and having a nozzle for discharging the coating agent of the connected syringe; a robot which moves an object to be coated, held by a robot hand, to a coating position; and a control unit, wherein the coating apparatus comprises a plurality of syringes respectively filled with different coating agents, the nozzles connected to the respective syringes, and a rotary table for rotationally moving together the syringes and the connected nozzles, and the control unit controls to select the syringe filled with the coating agent to be applied to the object, move the nozzle connected to the selected syringe to a position facing the coating position by the rotation of the rotary table, move the object held by the robot hand to the coating position, and discharge the coating agent from the nozzle.

Abstract: A robot coating system (1) includes a robot moving unit (21) which makes a robot (11) having a coating gun (12) successively move to a plurality of planned coating positions, a readying pressure imparting unit (22) which drives a pump (13) of the coating gun before reaching the planned coating positions and imparts to the viscous material a predetermined readying pressure without coating the viscous material, a coating executing unit (23) which executes coating work of the viscous material by a predetermined flow rate over a predetermined coating time when the coating gun has reached a planned coating position, and a post-coating stopping unit (24) which continues the coating work to make the pump stop after the end of the work when executing the coating work and a stop command of the robot is issued.

Abstract: A substrate processing method which is capable of enhancing productivity in manufacturing product substrates. In process chambers of an etching apparatus, etching is carried out on a substrate as an object to be processed, and dummy processing is carried out on at least one non-product substrate before execution of the etching. A host computer determines whether or not the dummy processing is to be executed. The host computer determines whether or not the interior of each of the process chambers and is in a stable state, and omits the execution of the dummy processing when it is determined that it is in the stable state.

Abstract: Technologies are generally described for a system and process effective to coat a substance with graphene. A system may include a first container including graphene oxide and water and a second container including a reducing agent and the substance. A third container may be operative relationship with the first container and the second container. A processor may be in communication with the first, second and third containers. The processor may be configured to control the third container to receive the graphene oxide and water from the first container and to control the third container to receive the reducing agent and the substance from the second container. The processor may be configured to control the third container to mix the graphene oxide, water, reducing agent, and substance under sufficient reaction conditions to produce sufficient graphene to coat the substance with graphene to produce a graphene coated substance.